JP7479055B2 - 高性能電池アノード材料用のシリコン封止 - Google Patents
高性能電池アノード材料用のシリコン封止 Download PDFInfo
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- 238000005538 encapsulation Methods 0.000 title description 17
- 239000010405 anode material Substances 0.000 title description 7
- 229920001296 polysiloxane Polymers 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 95
- 239000010703 silicon Substances 0.000 claims description 90
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 76
- 229910021389 graphene Inorganic materials 0.000 claims description 61
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- 238000009792 diffusion process Methods 0.000 claims description 3
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
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- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
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- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
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- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101100317222 Borrelia hermsii vsp3 gene Proteins 0.000 description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
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- 229910001290 LiPF6 Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
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- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0471—Processes of manufacture in general involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
- H01M4/624—Electric conductive fillers
- H01M4/625—Carbon or graphite
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/021—Physical characteristics, e.g. porosity, surface area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Description
[表1]異なる生成物の比表面積、全細孔容積、およびリチウムイオン電池性能の概要。比表面積は、量子ソフトウェア分析システムを使用して、0.05~0.20からBrunauer-Emmett-Teller(BET)データから計算した。
なお、これはいかなる導電性添加物も使用せずに達成されており、グラフェンケージの非常に良い導電性を示す。さらに、C/2(約1.4mA cm-2)の高いレートでの連続した300サイクルの後に約1,246mAh g-1の比容量が維持され、これは、依然として市販の黒鉛アノードの理論上の容量の3倍超であり、Mp-Siの理論上の容量(10サイクル目で560mAh g-1)、Mp-Si@Gの理論上の容量(300サイクル目で792mAh g-1)、またはMp-Si@Siの理論上の容量(100サイクル目で1047mAh g-1、300サイクル目で534mAh g-1)を大いに上回っている。Mp-Si@Si微粒子のサイクル安定性が緻密なSi微粒子のサイクル安定性(20サイクルで370mAh g-1未満)よりもはるかに良好であり、これはリチウム化プロセス中の体積膨張を緩衝する内部細孔空間から利を得ていることは言及するに値する。それにもかかわらず、Mp-Si@Siの表面におけるSEIは安定ではなく、後のサイクルでの乏しい安定性を誘発する。
2SiO→Si+SiO2 (1)
加熱不均化後に、それらの密度(SiO、Si、およびSiO2についてそれぞれ、2.1、2.3、および2.6g cm-3)に基づき1cm3のSiOは0.30cm3のSiおよび0.55cm3のSiO2が生成され、これは、SiO2の除去後に約11:6の大きな空所:Si比が達成されたことを意味する。この大きな体積比は、グラフェンシェルを崩壊させることなくSi材料の自由な体積膨張を可能にする。
て定義される本発明の範囲および趣旨の範囲内であると見なされる。
本発明の好ましい実施形態によれば、例えば、以下が提供される。
(項1)
電池電極であって、
a)多孔質シリコン微細構造前駆体と、
b)前記多孔質シリコン微細構造前駆体に堆積したシリコンシェルコーティングと、
c)前記シリコンシェルコーティングに堆積したグラフェンコーティングと、を含み、
前記グラフェンコーティングが前記シリコンシェルコーティングを封入して、グラフェン
封入シリコンシェル保護多孔質シリコン微細構造前駆体電池電極を形成する、
電池電極。
(項2)
前記多孔質シリコン微細構造前駆体が、Siメソ多孔質微粒子と、Siナノ粒子のクラ
スタとからなる群から選択される、上記項1に記載の電池電極。
(項3)
前記多孔質シリコン微細構造前駆体が、アニールされた前記多孔質シリコン微細構造前
駆体を含む、上記項1または2に記載の電池電極。
(項4)
前記シリコンシェルコーティングが、前記多孔質シリコン微細構造前駆体の密度より高
い密度を有する、上記項1から3のいずれか一項に記載の電池電極。
(項5)
前記シリコンシェルコーティングが封止構造を含み、前記封止構造は、前記多孔質シリ
コン微細構造前駆体へ拡散しないように電解質を封止し、かつ前記多孔質シリコン微細構
造前駆体の表面上の固体電解質界面の形成を制限するように構成されている、上記項1か
ら4のいずれか一項に記載の電池電極。
(項6)
前記シリコンシェルコーティングが封止構造を含み、前記封止構造は、カレンダ加工の
圧力に耐えるように構成され、前記シリコンシェルコーティングが、前記多孔質シリコン
微細構造前駆体の機械的強度よりも大きい機械的強度を有する、上記項1から5のいずれ
か一項に記載の電池電極。
Claims (8)
- 電池電極であって、
a)多孔質シリコン微細構造であって、その中に配置された細孔を含み、ここで、前記多孔質シリコン微細構造が、Siメソ多孔質微粒子と、Siナノ粒子のクラスタとからなる群から選択される、多孔質シリコン微細構造と、
b)前記多孔質シリコン微細構造に堆積したシリコンシェルコーティングと、
c)前記シリコンシェルコーティングに堆積したグラフェンコーティングと、を含み、前記グラフェンコーティングが前記シリコンシェルコーティングを封入して、グラフェン封入シリコンシェル保護多孔質シリコン微細構造電池電極を形成する、
電池電極。 - 前記シリコンシェルコーティングが、前記多孔質シリコン微細構造へ拡散しないように電解質を封止し、かつ前記多孔質シリコン微細構造の表面上の固体電解質界面の形成を制限するように構成されている、請求項1に記載の電池電極。
- 前記シリコンシェルコーティングが、カレンダ加工の圧力に耐えるように構成され、前記シリコンシェルコーティングが、前記多孔質シリコン微細構造の機械的強度よりも大きい機械的強度を有する、請求項1または2に記載の電池電極。
- グラフェン封入シリコンシェル保護多孔質シリコン微細構造電池電極が、100MPaを超える圧力に耐える、請求項1から3のいずれか一項に記載の電池電極。
- 前記シリコンシェルコーティングが、200nmの厚さを有する、請求項1から4のいずれか一項に記載の電池電極。
- 前記シリコンシェルコーティングの表面積が、前記多孔質シリコン微細構造の表面積よりも5倍低い、請求項1から5のいずれか一項に記載の電池電極。
- 前記Siナノ粒子のクラスタが球体である場合に、前記Siナノ粒子のクラスタが、1μm~5μmの範囲の直径を有する、請求項1から6のいずれか一項に記載の電池電極。
- 前記シリコンシェルコーティングが、前記多孔質シリコン微細構造に堆積され、その結果、前記多孔質シリコン微細構造の細孔が充填されないままである、請求項1から7のいずれか一項に記載の電池電極。
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