JP7476342B2 - 電気光学デバイス - Google Patents
電気光学デバイス Download PDFInfo
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- JP7476342B2 JP7476342B2 JP2022558392A JP2022558392A JP7476342B2 JP 7476342 B2 JP7476342 B2 JP 7476342B2 JP 2022558392 A JP2022558392 A JP 2022558392A JP 2022558392 A JP2022558392 A JP 2022558392A JP 7476342 B2 JP7476342 B2 JP 7476342B2
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- 230000003287 optical effect Effects 0.000 claims description 205
- 239000000758 substrate Substances 0.000 claims description 53
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- 239000000382 optic material Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- -1 LaYO3 Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910016928 MnNiCo Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/07—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 buffer layer
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
100 光変調器
1 基板
2 導波路層
2r リッジ部分
3 バッファ層
4 電極層
7 第1電極
8 第2電極
10 マッハツェンダー光導波路
10a 第1の光導波路
10b 第2の光導波路
10c 分波部
10d 合波部
10i 入力光導波路
10o 出力光導波路
200 光スイッチングデバイス
31 基板
32 導波路層
32r リッジ部分
33 バッファ層
34 膜電極層
307 膜状ヒータ
309a、309b 配線
310a、310b 第1及び第2の光導波路
Claims (8)
- 基板と、
前記基板上に、リッジ状に形成された電気光学材料膜からなる光導波路と、
前記光導波路を覆うように設けられたバッファ層と、
前記光導波路上に前記バッファ層を介して設けられた上部電極と、を有し、
前記バッファ層は、前記光導波路上の前記上部電極側に、前記光導波路側に向かって湾曲した曲面状の凹みを有することを特徴とする電気光学デバイス。 - 基板と、
前記基板上にリッジ状に形成された、電気光学材料膜からなり、互いに隣り合う第1及び第2の光導波路と、
前記第1及び第2の光導波路を覆うと共に、前記第1及び第2の光導波路間を埋めるバッファ層と、
前記バッファ層の上方に前記第1及び第2の光導波路と対向して設けられた第1及び第2電極と、を備え、
前記バッファ層は、前記第1及び第2の光導波路上の前記第1及び第2の電極側に、前記第1及び第2の光導波路側に向かって湾曲した曲面状の凹みを有することを特徴とする電気光学デバイス。 - 前記第1及び第2の光導波路と第1及び第2電極との間に設けられたバッファ層は、前記第1及び第2の光導波路上の前記第1及び第2の電極側に、前記第1及び第2の光導波路の上方全体にわたって形成された、前記第1及び第2の光導波路側に向かって湾曲した曲面状の凹みを有することを特徴とする請求項2に記載の電気光学デバイス。
- 前記第1及び第2の光導波路と第1及び第2電極との間に設けられたバッファ層は、第1のバッファ層及び第2のバッファ層を含み、前記第1のバッファ層及び前記第2のバッファ層はいずれも、前記第1及び第2の光導波路の上方全体にわたって形成された、前記第1及び第2の光導波路側に向かって湾曲した曲面状の凹みを有することを特徴とする請求項3に記載の電気光学デバイス。
- 前記バッファ層の凹み量は、1000~10000オングストロームであることを特徴とする請求項1~4のいずれか一項に記載の電気光学デバイス。
- 前記バッファ層の凹み量は、1000~2000オングストロームであることを特徴とする請求項1~4のいずれか一項に記載の電気光学デバイス。
- 前記第1及び第2の光導波路はマッハツェンダー光導波路であることを特徴とする請求項2~6のいずれか一項に記載の電気光学デバイス。
- 前記基板は単結晶基板であり、
前記電気光学材料膜はニオブ酸リチウム膜であることを特徴とする請求項1~7のいずれか一項に記載の電気光学デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN202010241143.7A CN113467108A (zh) | 2020-03-31 | 2020-03-31 | 光电器件 |
CN202010241143.7 | 2020-03-31 | ||
PCT/JP2021/013932 WO2021201131A1 (en) | 2020-03-31 | 2021-03-31 | Electro-optical device |
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JP2023522150A JP2023522150A (ja) | 2023-05-29 |
JP7476342B2 true JP7476342B2 (ja) | 2024-04-30 |
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JP2022558392A Active JP7476342B2 (ja) | 2020-03-31 | 2021-03-31 | 電気光学デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230115362A1 (ja) |
JP (1) | JP7476342B2 (ja) |
CN (2) | CN113467108A (ja) |
WO (1) | WO2021201131A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020106141A1 (en) | 2001-02-08 | 2002-08-08 | Codeon Corporation | Low-loss electrode designs for high-speed optical modulators |
JP2014142411A (ja) | 2013-01-22 | 2014-08-07 | Tdk Corp | 光変調器 |
JP2015014715A (ja) | 2013-07-05 | 2015-01-22 | Tdk株式会社 | 電気光学デバイス |
WO2019039215A1 (ja) | 2017-08-24 | 2019-02-28 | Tdk株式会社 | 光変調器 |
JP2019074595A (ja) | 2017-10-13 | 2019-05-16 | Tdk株式会社 | 光変調器 |
-
2020
- 2020-03-31 CN CN202010241143.7A patent/CN113467108A/zh active Pending
-
2021
- 2021-03-31 US US17/914,280 patent/US20230115362A1/en active Pending
- 2021-03-31 CN CN202180025893.3A patent/CN115362407A/zh active Pending
- 2021-03-31 WO PCT/JP2021/013932 patent/WO2021201131A1/en active Application Filing
- 2021-03-31 JP JP2022558392A patent/JP7476342B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020106141A1 (en) | 2001-02-08 | 2002-08-08 | Codeon Corporation | Low-loss electrode designs for high-speed optical modulators |
JP2014142411A (ja) | 2013-01-22 | 2014-08-07 | Tdk Corp | 光変調器 |
JP2015014715A (ja) | 2013-07-05 | 2015-01-22 | Tdk株式会社 | 電気光学デバイス |
WO2019039215A1 (ja) | 2017-08-24 | 2019-02-28 | Tdk株式会社 | 光変調器 |
JP2019074595A (ja) | 2017-10-13 | 2019-05-16 | Tdk株式会社 | 光変調器 |
Also Published As
Publication number | Publication date |
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CN115362407A (zh) | 2022-11-18 |
US20230115362A1 (en) | 2023-04-13 |
JP2023522150A (ja) | 2023-05-29 |
CN113467108A (zh) | 2021-10-01 |
WO2021201131A1 (en) | 2021-10-07 |
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