JP7470752B2 - 特定の波長を有する光を自己フィルタリングするフォトダイオードの構造 - Google Patents
特定の波長を有する光を自己フィルタリングするフォトダイオードの構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 39
- 238000001914 filtration Methods 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 30
- 230000004044 response Effects 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 229920000620 organic polymer Polymers 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 12
- 150000003384 small molecules Chemical class 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- 229920001940 conductive polymer Polymers 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000002070 nanowire Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 claims description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 2
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 2
- 229920002246 poly[2-(dimethylamino)ethyl methacrylate] polymer Polymers 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 102100022057 Hepatocyte nuclear factor 1-alpha Human genes 0.000 description 2
- 101001045751 Homo sapiens Hepatocyte nuclear factor 1-alpha Proteins 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- 102100022123 Hepatocyte nuclear factor 1-beta Human genes 0.000 description 1
- 101001045758 Homo sapiens Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Description
このため、自己フィルタリングが可能な半値全幅応答のフォトダイオードの構造をどのように作製するかは、当業者が解決しようとする課題である。
本発明は実施例を提供し、前記正孔伝達層が、有機高分子、有機小分子および金属酸化物から選択される。またはこれらの材料を任意に組み合わせた群から選択される。有機高分子系がPEDOT:PSSまたはPTAAを使用し、有機小分子系がspiro-MeOTADまたはm-MTDATAを使用し、金属酸化物系がMoO3、NiO、V2O5、WO3またはCuSCNを使用する。
1.構成:図3のフォトダイオードの構造を参照。
1.構成:図3のフォトダイオードの構造を参照。
1.構成:図3のフォトダイオードの構造を参照。
1.構成:図3のフォトダイオードの構造を参照。
1.構成:図3のフォトダイオードの構造を参照。前記第一電極20はITO(従来使用されているTCF1)を使用し、前記第二電極50は透明電極(TCF2、インジウムをドープしたZnO)を使用する。
20 第一電極
22 第一活性金属層
30 電子伝達層
40 光活性層
41 P型半導体層
43 N型半導体層
45 厚さ
50 第二電極
52 第二活性金属層
60 正孔伝達層
Claims (9)
- 外部光源を電流値に変換し、特定の波長を有する光を自己フィルタリングするフォトダイオードの構造であって、
基板、
前記基板上に設置されている第一電極、
前記第一電極上に設置されている電子伝達層、
前記電子伝達層上に設置され、P型半導体及びN型半導体を含み、前記P型半導体及び前記N型半導体は1:0.5~1:1.5の組成比率を有し、かつ1μm~15μmの厚さを有する光活性層、および
前記光活性層上に設置されている第二電極を備え、
前記光活性層の前記P型半導体は、
に示される化合物より構成される群から選ばれ、
前記光活性層の前記N型半導体は、
前記フォトダイオードの構造は、前記光活性層の前記P型半導体と前記N型半導体との組成比率、および前記光活性層の厚さを組み合わせて調整することによって、自己フィルタリングおよび半値全幅応答を実現し、
前記半値全幅応答は、外部量子効率の最大値から外部量子効率の半値まで外部量子効率が単調に減少する応答であり、
前記自己フィルタリングは、光学フィルタを用いずに前記半値全幅応答を実現する、ことを特徴とする特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記基板はシリコン基板、ポリイミド基板、ガラス基板、ポリエチレンテレフタレート基板、ポリエチレンテレフタラート基板、サファイア基板、石英基板またはセラミックス基板を使用する
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記第一電極が透明電極または金属電極であり、前記透明電極は金属酸化物、導電性高分子、グラフェン、カーボンナノチューブ、金属ナノワイヤ、金属メッシュ、またはこれらの材料の任意の組み合わせから選択され、前記金属電極はアルミニウム、銀、金、銅、タングステン、モリブデン、チタンまたはこれらの金属材料を異なる比率で組み合わせて作製される複合金属電極、または、これらの金属材料として異なる元素を組み合わせて作製される複合金属電極から選択される
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記第一電極は更に第一活性金属層を含み、前記第一活性金属層は前記第一電極内に設置され、前記第一活性金属層はマグネシウム、カルシウム、リチウム、セシウム及びその組成物より構成される群から選択される
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記電子伝達層が、有機高分子、有機小分子および金属酸化物から選択され、またはこれらの材料を任意に組み合わせた群から選択され、有機高分子系がPFN-DOF、PFN-BrまたはPDMAEMAを使用し、有機小分子系がPDIN、PDINO、PDINNまたはNDI-Nを使用し、金属酸化物系がSnO2、ZnO、TiO2、Cs2CO3またはNb2O5を使用する
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 更に、前記光活性層と前記第二電極との間に設置された正孔伝達層を含む
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記正孔伝達層が、有機高分子、有機小分子および金属酸化物から選択され、またはこれらの材料を任意に組み合わせた群から選択され、有機高分子系がPEDOT:PSSまたはPTAAを使用し、有機小分子系がspiro-MeOTADまたはm-MTDATAを使用し、金属酸化物系がMoO3、NiO、V2O5、WO3またはCuSCNを使用する
ことを特徴とする請求項6に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記第二電極が透明電極または金属電極であり、前記透明電極は金属酸化物、導電性高分子、グラフェン、カーボンナノチューブ、金属ナノワイヤ、金属メッシュ、または前記材料の任意の組み合わせから選択され、前記金属電極はアルミニウム、銀、金、銅、タングステン、モリブデン、チタンまたはこれらの金属材料を異なる比率で組み合わせて作製される複合金属電極、または、これらの金属材料として異なる元素を組み合わせて作製される複合金属電極から選択される
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。 - 前記第二電極は更に第二活性金属層を含み、第二活性金属層は前記第二電極内に設置され、前記第二活性金属層はマグネシウム、カルシウム、リチウム、セシウム及びその組成物より構成される群から選択される
ことを特徴とする請求項1に記載の特定の波長を有する光を自己フィルタリングするフォトダイオードの構造。
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