JP7465873B2 - 電磁放射検出装置 - Google Patents
電磁放射検出装置 Download PDFInfo
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- JP7465873B2 JP7465873B2 JP2021528003A JP2021528003A JP7465873B2 JP 7465873 B2 JP7465873 B2 JP 7465873B2 JP 2021528003 A JP2021528003 A JP 2021528003A JP 2021528003 A JP2021528003 A JP 2021528003A JP 7465873 B2 JP7465873 B2 JP 7465873B2
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- 230000005670 electromagnetic radiation Effects 0.000 title claims description 16
- 230000003287 optical effect Effects 0.000 claims description 43
- 238000001514 detection method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 14
- 230000002745 absorbent Effects 0.000 claims description 11
- 239000002250 absorbent Substances 0.000 claims description 11
- 230000001747 exhibiting effect Effects 0.000 claims description 10
- 239000011358 absorbing material Substances 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 83
- 230000005855 radiation Effects 0.000 description 22
- 230000035882 stress Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
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- 239000002356 single layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
光学機能体(optical function)を形成し、第2の熱膨張係数を示す第2の積層体と
を備える検出装置を提供することが特に好適である。
第2の積層体が、第1の光検出器に面する第1のフィルタを備え、第1のフィルタが、第1の波長範囲を通過させ、第1の波長範囲とは異なる第2の波長範囲を遮断するように構成され、第2の光検出器が、第1の光検出器および第2の光検出器によって受け取られる電磁放射を分離するために第1のフィルタとは異なる光学機能体によって覆われる
検出装置を提供することが好適である。
LWIR:8μmから15μmの間、
SWIR:1.4μmから3μmの間。
Claims (8)
- 電磁放射を検出する検出装置であって、
少なくとも第1の波長範囲の電磁放射を吸収するように構成され、第1の熱膨張係数を示す吸収性の第1の積層体であって、吸収材料から作られる層を備える吸収性の第1の積層体と、
光学機能体を形成し、第2の熱膨張係数を示す第2の積層体と、
を備え、
前記第1の熱膨張係数が、前記第2の熱膨張係数とは異なること、および、
前記第2の積層体によって導入される一連の機械的応力から前記吸収性の第1の積層体を分離するために前記吸収性の第1の積層体と第2の積層体を分離する緩衝層であって、0.5μmから50μmの間で構成される厚さを示す緩衝層をさらに備え、および、
前記緩衝層が、前記第1の積層体と格子整合する半導体材料によって形成されること、または、前記緩衝層と吸収性の第1の積層体との間の格子パラメータの差が、1%未満であり、前記緩衝層が一界面において前記第1の積層体と面し、逆側の界面において前記第2の積層体と面し、および、
前記吸収材料が、II-VI材料もしくはIII-V材料であることを特徴とする、
検出装置。 - 前記緩衝層が、電気的に絶縁性である、請求項1に記載の検出装置。
- 前記緩衝層が、前記第1の波長範囲を吸収しないように構成される、請求項1または2のいずれか一項に記載の検出装置。
- 前記吸収性の第1の積層体が、第1の光検出器、および前記第1の光検出器に隣接する第2の光検出器を備え、
前記第2の積層体が、前記第1の光検出器に面する第1のフィルタを備え、前記第1のフィルタが、第1の波長範囲を通過させ、前記第1の波長範囲とは異なる第2の波長範囲を遮断するように構成され、前記第2の光検出器が、前記第1の光検出器および前記第2の光検出器によって受け取られる電磁放射を分離するために前記第1のフィルタとは異なる光学機能体によって覆われる、
請求項1から3のいずれか一項に記載の検出装置。 - 前記光学機能体が、前記第1の光検出器も覆う反射防止層である、請求項4に記載の検出装置。
- 前記光学機能体が、前記第2の光検出器に面し、かつ前記第2の波長範囲を通過させ、前記第1の波長範囲を遮断するように構成される第2のフィルタである、請求項4に記載の検出装置。
- 前記第1の光検出器および前記第2の光検出器が、前記第1の波長範囲および前記第2の波長範囲を吸収するように構成される、請求項4から6のいずれか一項に記載の検出装置。
- 前記吸収性の第1の積層体が、繰り返しピッチPで配置される複数の光検出器を備え、前記緩衝層が、nが前記緩衝層の光学指数である
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857039A FR3084523B1 (fr) | 2018-07-27 | 2018-07-27 | Dispositif de detection electromagnetique |
FR1857039 | 2018-07-27 | ||
PCT/FR2019/051855 WO2020021211A1 (fr) | 2018-07-27 | 2019-07-26 | Dispositif de detection de rayonnement electromagnetique |
Publications (2)
Publication Number | Publication Date |
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JP2021533387A JP2021533387A (ja) | 2021-12-02 |
JP7465873B2 true JP7465873B2 (ja) | 2024-04-11 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2021528003A Active JP7465873B2 (ja) | 2018-07-27 | 2019-07-26 | 電磁放射検出装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11869905B2 (ja) |
EP (1) | EP3830873B1 (ja) |
JP (1) | JP7465873B2 (ja) |
KR (1) | KR102617508B1 (ja) |
CN (1) | CN112740408A (ja) |
FR (1) | FR3084523B1 (ja) |
IL (1) | IL280279B2 (ja) |
WO (1) | WO2020021211A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2024138730A1 (en) * | 2022-12-30 | 2024-07-04 | Shanghai United Imaging Healthcare Co., Ltd. | Photon-counting detectors for detecting radiation rays |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365088A (en) | 1988-08-02 | 1994-11-15 | Santa Barbara Research Center | Thermal/mechanical buffer for HgCdTe/Si direct hybridization |
WO2015004235A1 (fr) | 2013-07-12 | 2015-01-15 | Commissariat à l'énergie atomique et aux énergies alternatives | Photodetecteur semi-transparent a jonction p-n structuree |
WO2015115229A1 (ja) | 2014-01-31 | 2015-08-06 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ |
WO2016140965A1 (en) | 2015-03-02 | 2016-09-09 | Northwestern University | Electroabsorption modulator for depth imaging and other applications |
WO2016145127A1 (en) | 2015-03-09 | 2016-09-15 | California Institute Of Technology | Mid-infrared hyperspectral spectroscopy systems and methods thereof |
WO2017008166A1 (en) | 2015-07-14 | 2017-01-19 | Dose Smart Imaging | Apparatus for radiation detection in a digital imaging system |
WO2017121630A1 (en) | 2016-01-13 | 2017-07-20 | Lfoundry S.R.L. | Method for manufacturing improved nir cmos sensors |
WO2018104655A1 (fr) | 2016-12-07 | 2018-06-14 | Societe Française De Detecteurs Infrarouges - Sofradir | Dispositif de detection multispectrale ameliore |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2088451B1 (en) * | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
US20110012091A1 (en) * | 2009-01-12 | 2011-01-20 | The Regents Of The University Of Michigan | Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers |
FR2960654B1 (fr) * | 2010-05-27 | 2012-06-15 | Commissariat Energie Atomique | Filtre optique propre a traiter un rayonnement d'incidence variable et detecteur comprenant un tel filtre |
WO2015113737A1 (en) * | 2014-01-31 | 2015-08-06 | Merck Patent Gmbh | Method for producing a uv photodetector |
-
2018
- 2018-07-27 FR FR1857039A patent/FR3084523B1/fr not_active Expired - Fee Related
-
2019
- 2019-07-26 EP EP19761922.4A patent/EP3830873B1/fr active Active
- 2019-07-26 KR KR1020217001629A patent/KR102617508B1/ko active IP Right Grant
- 2019-07-26 JP JP2021528003A patent/JP7465873B2/ja active Active
- 2019-07-26 US US17/258,379 patent/US11869905B2/en active Active
- 2019-07-26 IL IL280279A patent/IL280279B2/en unknown
- 2019-07-26 CN CN201980049492.4A patent/CN112740408A/zh active Pending
- 2019-07-26 WO PCT/FR2019/051855 patent/WO2020021211A1/fr unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365088A (en) | 1988-08-02 | 1994-11-15 | Santa Barbara Research Center | Thermal/mechanical buffer for HgCdTe/Si direct hybridization |
WO2015004235A1 (fr) | 2013-07-12 | 2015-01-15 | Commissariat à l'énergie atomique et aux énergies alternatives | Photodetecteur semi-transparent a jonction p-n structuree |
WO2015115229A1 (ja) | 2014-01-31 | 2015-08-06 | 富士フイルム株式会社 | 光電変換素子、撮像素子、光センサ |
WO2016140965A1 (en) | 2015-03-02 | 2016-09-09 | Northwestern University | Electroabsorption modulator for depth imaging and other applications |
WO2016145127A1 (en) | 2015-03-09 | 2016-09-15 | California Institute Of Technology | Mid-infrared hyperspectral spectroscopy systems and methods thereof |
WO2017008166A1 (en) | 2015-07-14 | 2017-01-19 | Dose Smart Imaging | Apparatus for radiation detection in a digital imaging system |
WO2017121630A1 (en) | 2016-01-13 | 2017-07-20 | Lfoundry S.R.L. | Method for manufacturing improved nir cmos sensors |
WO2018104655A1 (fr) | 2016-12-07 | 2018-06-14 | Societe Française De Detecteurs Infrarouges - Sofradir | Dispositif de detection multispectrale ameliore |
Also Published As
Publication number | Publication date |
---|---|
WO2020021211A1 (fr) | 2020-01-30 |
KR102617508B1 (ko) | 2023-12-22 |
KR20210032394A (ko) | 2021-03-24 |
EP3830873A1 (fr) | 2021-06-09 |
US20210296376A1 (en) | 2021-09-23 |
IL280279A (en) | 2021-03-01 |
US11869905B2 (en) | 2024-01-09 |
CN112740408A (zh) | 2021-04-30 |
IL280279B1 (en) | 2023-06-01 |
FR3084523B1 (fr) | 2020-12-25 |
EP3830873B1 (fr) | 2022-06-22 |
JP2021533387A (ja) | 2021-12-02 |
IL280279B2 (en) | 2023-10-01 |
FR3084523A1 (fr) | 2020-01-31 |
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