JP7465265B2 - 位相制御を使用してプラズマ分布を調整するためのデバイス及び方法 - Google Patents
位相制御を使用してプラズマ分布を調整するためのデバイス及び方法 Download PDFInfo
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- JP7465265B2 JP7465265B2 JP2021527838A JP2021527838A JP7465265B2 JP 7465265 B2 JP7465265 B2 JP 7465265B2 JP 2021527838 A JP2021527838 A JP 2021527838A JP 2021527838 A JP2021527838 A JP 2021527838A JP 7465265 B2 JP7465265 B2 JP 7465265B2
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 92
- 238000010926 purge Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 description 35
- 239000007789 gas Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 24
- 239000004020 conductor Substances 0.000 description 22
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- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 18
- 230000003071 parasitic effect Effects 0.000 description 13
- -1 argon ions Chemical class 0.000 description 10
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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Description
本出願は、その全体がここに参照することによって本願に援用される、2018年11月21日出願の米国仮特許出願第62/770,547号の優先権の利益を主張する。
Claims (20)
- 支持面と前記支持面の反対側の裏面とステムとを有する支持ペデスタル、
前記支持ペデスタル内に配置された導電性メッシュ、
前記支持面と対向するように配置された面板、
少なくとも部分的に前記支持ペデスタル及び前記面板によって画定された処理空間、
環状形状を有しかつ前記支持ペデスタルの裏面に隣接して配置され、前記支持ペデスタルのステムを取り囲む接地ボウルの第1の部分、
前記支持ペデスタルと前記接地ボウルの前記第1の部分の少なくとも一部とを取り囲む環状ライナ、及び
前記面板と前記導電性メッシュとに結合された位相制御回路
を含む、装置。 - 前記位相制御回路が、
位相検出器、
フィードバックコントローラ、及び
位相調整器
を含む、請求項1に記載の装置。 - 位相調整器が、
可変キャパシタ、及び
該可変キャパシタと並列のインダクタ
を含む、請求項2に記載の装置。 - 高周波(RF)ジェネレータ、
前記高周波ジェネレータと前記面板とに結合された第1の増幅器、及び
前記高周波ジェネレータと前記導電性メッシュとに結合された第2の増幅器
をさらに含む、請求項1に記載の装置。 - 前記環状ライナの径方向外側に配置された前記接地ボウルの第2の部分、及び
前記接地ボウルの前記第1の部分と前記接地ボウルの前記第2の部分との間に形成されたパージ間隙であって、該パージ間隙の少なくとも一部が前記環状ライナによって画定されており、該環状ライナが、前記接地ボウルの前記第2の部分の少なくとも一部と前記パージ間隙との間に配置されている、パージ間隙
をさらに含む、請求項1に記載の装置。 - 前記接地ボウルの前記第1の部分がステンレス鋼含有材料を含み、前記接地ボウルの前記第2の部分がアルミニウム含有材料を含む、請求項5に記載の装置。
- 支持面と前記支持面の反対側の裏面とステムとを有する支持ペデスタル、
前記支持ペデスタル内に配置された導電性メッシュ、
前記支持面と対向するように配置された面板、
少なくとも部分的に前記支持ペデスタル及び前記面板によって画定された処理空間、
環状形状を有しかつ前記支持ペデスタルの裏面に隣接して配置され、前記支持ペデスタルのステムを取り囲む接地ボウルの第1の部分、
前記支持ペデスタルと前記接地ボウルの前記第1の部分の少なくとも一部とを取り囲む環状ライナ、及び
前記導電性メッシュと前記面板とに結合された可変変圧器
を含む、装置。 - 高周波(RF)ジェネレータ、及び
前記高周波ジェネレータと前記導電性メッシュとに結合された増幅器、
をさらに含む、請求項7に記載の装置。 - 支持面と前記支持面の反対側の裏面とステムとを有する支持ペデスタル、
前記支持ペデスタル内に配置された導電性メッシュ、
前記支持面と対向するように配置された面板、
少なくとも部分的に前記支持ペデスタル及び前記面板によって画定された処理空間、
環状形状を有しかつ前記支持ペデスタルの裏面に隣接して配置され、前記支持ペデスタルのステムを取り囲む接地ボウルの第1の部分、
前記接地ボウルの前記第1の部分の径方向外側に配置された前記接地ボウルの第2の部分、
前記接地ボウルの前記第2の部分内に形成されたレッジ、
前記支持ペデスタルに隣接して、前記接地ボウルの前記第1の部分と前記接地ボウルの前記第2の部分との間に形成されたパージ間隙、
前記支持ペデスタルと前記接地ボウルの前記第1の部分の少なくとも一部とを取り囲む環状ライナであって、前記レッジ上に配置された環状ライナ、及び
前記面板と前記導電性メッシュとに結合された位相制御回路
を含む、装置。 - 前記位相制御回路が、
位相検出器、
フィードバックコントローラであって、前記面板と前記導電性メッシュとから送信された位相データを使用する、フィードバックコントローラ、及び
位相調整器
を含む、請求項9に記載の装置。 - 前記位相調整器が、
可変キャパシタ、及び
該可変キャパシタと並列のインダクタ
を備えている、請求項10に記載の装置。 - 高周波(RF)ジェネレータ、
前記高周波ジェネレータと前記面板とに結合された第1の増幅器、及び
前記高周波ジェネレータと前記導電性メッシュとに結合された第2の増幅器
をさらに含む、請求項11に記載の装置。 - 前記パージ間隙の少なくとも一部が前記環状ライナと前記接地ボウルの前記第1の部分との間にある、請求項9に記載の装置。
- 前記環状ライナが酸化アルミニウム含有材料を含む、請求項9に記載の装置。
- 前記パージ間隙の少なくとも一部が、前記環状ライナと前記接地ボウルの前記第1の部分との間にある、請求項5に記載の装置。
- 前記導電性メッシュと前記増幅器との間に配置され、かつ前記導電性メッシュと前記増幅器に結合されたRF整合回路
をさらに含む、請求項8に記載の装置。 - 前記環状ライナの径方向外側に配置された前記接地ボウルの第2の部分、及び
前記接地ボウルの前記第1の部分と前記接地ボウルの前記第2の部分との間に形成されたパージ間隙であって、該パージ間隙の少なくとも一部が前記接地ボウルの前記第2の部分によって画定されており、前記環状ライナが、前記接地ボウルの前記第2の部分の少なくとも一部と前記パージ間隙との間に配置されている、パージ間隙
をさらに含む、請求項16に記載の装置。 - 前記接地ボウルの前記第1の部分がステンレス鋼含有材料を含み、前記接地ボウルの前記第2の部分がアルミニウム含有材料を含む、請求項17に記載の装置。
- 前記パージ間隙が前記環状ライナと前記接地ボウルの前記第1の部分との間にある、請求項17に記載の装置。
- 前記接地ボウルの前記第1の部分がステンレス鋼含有材料を含み、前記接地ボウルの前記第2の部分がアルミニウム含有材料を含む、請求項13に記載の装置。
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CN112955997B (zh) | 2024-04-05 |
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