JP7461725B2 - 検出装置 - Google Patents
検出装置 Download PDFInfo
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- JP7461725B2 JP7461725B2 JP2019166577A JP2019166577A JP7461725B2 JP 7461725 B2 JP7461725 B2 JP 7461725B2 JP 2019166577 A JP2019166577 A JP 2019166577A JP 2019166577 A JP2019166577 A JP 2019166577A JP 7461725 B2 JP7461725 B2 JP 7461725B2
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Description
図1は、第1実施形態に係る検出装置を有する照明装置付き検出機器の概略断面構成を示す断面図である。図1に示すように、照明装置付き検出機器120は、検出装置1と、照明装置121と、カバーガラス122とを有する。検出装置1の表面に垂直な方向において、照明装置121、検出装置1、カバーガラス122の順に積層されている。
センサ部10が有する第1光センサ30の製造方法の概略を述べる。絶縁基板21に成膜されたポリイミド25上に積層されたアンダーコート26、遮光層27及びインシュレータ上に、LTPS(Low Temperature Poly Silicon)22を含むバックプレーンBPを形成した。ポリイミド25の厚みは、例えば10μmである。バックプレーンBPを形成するためのデバイスは、バックプレーンBPを形成するための全てのプロセスが終了後にLLO(Laser lift off)でガラス基板から剥離する。バックプレーンBPは、第1スイッチング素子Trとして機能する。なお、実施形態では、半導体層としてLTPS22が採用されているが、これに限られるものでなく、アモルファスシリコン等、他の半導体によってもよい。
チップの表面を300W、10秒(sec)の条件でO2プラズマ処理を行った。次に、ZnO層をスピンコート条件5000rpm、30秒(sec)で成膜し、180℃で30分(min)アニールを行った。ZnO表面に有機層として、PMDPP3T:PCBM溶液またはSTD-001:PCBM溶液をそれぞれ250rpm、4minでスピンコートした。その後、窒素雰囲気化においてPEDOT:PSS(例えば、Al4083)をイソプロピルアルコール(IsoPropyl Alcohol:IPA)で(3:17)に希釈した溶液を0.45μmのPVDFフィルターで濾過した後、2000rpmで30秒(sec)の条件でスピンコート法により成膜した。成膜後、窒素雰囲気化で80℃、5分(min)アニールを行った。最後に、アノード電極34として銀を80nm真空蒸着した。デバイスが完成後、封止膜として1μmのパリレンをCVD(Chemical Vapor Deposition)法にて成膜し、コンタクトパッドとしてCr/Auを真空蒸着した。
図14は、第2実施形態に係る検出装置を示す平面図である。なお、上述した第1実施形態で説明したものと同じ構成要素には同一の符号を付して重複する説明は省略する。図14に示すように、第2実施形態の検出装置1Aは、複数の第2光センサ50を有する。
図15は、第3実施形態に係る検出装置を示す平面図である。図15に示すように、第3実施形態の検出装置1Bは、複数の第2光センサ50を有する。複数の第1光センサ30及び複数の第2光センサ50は、検出領域AAに設けられる。複数の第1光センサ30及び複数の第2光センサ50は、検出領域AAで、第1方向Dxに沿って交互に配列され、かつ、第2方向Dyに沿って交互に配列される。
図16は、第4実施形態に係る検出装置を示す平面図である。図16に示すように、第4実施形態の検出装置1Cは、検出領域AAに設けられた1つの第2光センサ50を有する。より具体的には、第2光センサ50は、検出領域AAの全領域を覆って設けられる。複数の第1光センサ30は、1つの第2光センサ50と重なってマトリクス状に配列される。また、複数の第1光センサ30に対応して設けられたゲート線GCL及び信号線SGLも、1つの第2光センサ50と重なって配置される。
図18は、第4実施形態の変形例に係る検出装置を示す平面図である。第4実施形態の変形例に係る検出装置1Dは、検出領域AAに設けられた複数の第2光センサ50を有する。第2光センサ50は、検出領域AAにマトリクス状に配列される。複数の第1光センサ30は、1つの第2光センサ50と重なってマトリクス状に配列される。図18に示す例では、1つの第2光センサ50と重なって9個の第1光センサ30が設けられる。ただし、これに限定されず、1つの第2光センサ50と重なって10個以上の第1光センサ30が設けられてもよく、例えば、数10個の第1光センサ30が設けられてもよい。
10 センサ部
15 ゲート線駆動回路
16 信号線選択回路
17 リセット回路
21 絶縁基板
30 第1光センサ
31 アクティブ層
34、54 アノード電極
35、55 カソード電極
48 検出回路
50 第2光センサ
51 半導体層
51a i型半導体層
51b n型半導体層
51c p型半導体層
101 制御基板
102 制御回路
103 電源回路
AA 検出領域
GA 周辺領域
GCL、GCL-R ゲート線
SGL、SGL-R 信号線
Tr 第1スイッチング素子
Claims (6)
- 基板と、
前記基板の検出領域に設けられ、光起電力効果を有する有機材料層を含む複数の第1光センサと、
前記基板に設けられ、光起電力効果を有する無機材料層を含む少なくとも1つ以上の第2光センサと、を有し、
複数の前記第1光センサは、前記検出領域にマトリクス状に配列され、
前記第2光センサは、前記基板の周辺領域に1つ配置される
検出装置。 - 基板と、
前記基板の検出領域に設けられ、光起電力効果を有する有機材料層を含む複数の第1光センサと、
前記基板に設けられ、光起電力効果を有する無機材料層を含む複数の第2光センサと、を有し、
複数の前記第1光センサは、前記検出領域にマトリクス状に配列され、
複数の前記第2光センサは、前記基板の周辺領域に設けられ、前記検出領域の少なくとも一辺に沿って配列される
検出装置。 - 基板と、
前記基板の検出領域に設けられ、光起電力効果を有する有機材料層を含む複数の第1光センサと、
前記基板に設けられ、光起電力効果を有する無機材料層を含む複数の第2光センサと、を有し、
前記第1光センサ及び前記第2光センサは、前記検出領域で、第1方向に沿って交互に配列される
検出装置。 - 前記無機材料層は、アモルファスシリコンからなる無機半導体層である
請求項1から請求項3のいずれか1項に記載の検出装置。 - 複数の前記第1光センサ及び前記第2光センサの検出を制御する制御回路を有し、
前記制御回路は、前記第1光センサから出力された第1検出信号と、前記第2光センサから出力された第2検出信号との差分の信号の変化に基づいて、複数の前記第1光センサの検出を制御する
請求項1から請求項4のいずれか1項に記載の検出装置。 - 基板と、
前記基板の検出領域に設けられ、光起電力効果を有する有機材料層を含む複数の第1光センサと、
前記基板に設けられ、光起電力効果を有する無機材料層を含む少なくとも1つ以上の第2光センサと、を有し、
複数の前記第1光センサ及び前記第2光センサの検出を制御する制御回路を有し、
前記制御回路は、前記第1光センサから出力された第1検出信号と、前記第2光センサから出力された第2検出信号との差分の信号の変化に基づいて、複数の前記第1光センサの検出を制御する
検出装置。
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