JP7454049B2 - マルチカソード堆積システム及び方法 - Google Patents
マルチカソード堆積システム及び方法 Download PDFInfo
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- JP7454049B2 JP7454049B2 JP2022534138A JP2022534138A JP7454049B2 JP 7454049 B2 JP7454049 B2 JP 7454049B2 JP 2022534138 A JP2022534138 A JP 2022534138A JP 2022534138 A JP2022534138 A JP 2022534138A JP 7454049 B2 JP7454049 B2 JP 7454049B2
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- 230000008021 deposition Effects 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 17
- 238000000151 deposition Methods 0.000 claims description 96
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 62
- 238000005240 physical vapour deposition Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 35
- 238000000429 assembly Methods 0.000 claims description 19
- 230000000712 assembly Effects 0.000 claims description 19
- 230000001133 acceleration Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- -1 oxides Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FNYLUKDQSKKYHG-UHFFFAOYSA-N [Ru].[W] Chemical compound [Ru].[W] FNYLUKDQSKKYHG-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (8)
- 物理気相堆積(PVD)チャンバであって、
複数のカソードアセンブリ;
基板を支持するように構成された回転可能なペデスタルであって、セラミック、及び先細りになっていない平坦な非凹状のエッジを備えている、ペデスタル;
前記ペデスタルの前記エッジに隣接した内側堆積リング;
前記内側堆積リングに隣接した外側堆積リング;及び
シャフトに結合されたモータであって、前記回転可能なペデスタルを、毎分10~20の範囲の回転数(RPM)、0.10~15RPM/秒の範囲の回転加速度、及び0.10~0.15RPM/秒の範囲の減速度で回転させるように構成されたモータ
を含み、
前記内側堆積リング及び前記外側堆積リングの一部が重なり合い、前記内側堆積リングが、前記回転可能なペデスタルとともに回転するように構成され、前記外側堆積リングが、静止状態であり回転しないように構成される、物理気相堆積(PVD)チャンバ。 - 前記外側堆積リングの一部と重なり合うカバーリングをさらに含む、請求項1に記載のPVDチャンバ。
- 前記内側堆積リングが、該内側堆積リングから下方に延びる突出リムを含む、請求項1に記載のPVDチャンバ。
- 前記外側堆積リングが、該外側堆積リングから上方に延びる突出リムを含む、請求項3に記載のPVDチャンバ。
- 前記外側堆積リングから上方に延びる前記突出リムと前記内側堆積リングから下方に延びる前記突出リムとが重なり合う、請求項4に記載のPVDチャンバ。
- 材料層を堆積させる方法であって、
請求項1に記載のPVDチャンバ内に、基板を配置すること;
前記基板上に材料層を堆積させること;及び
前記回転可能なペデスタルを、毎分10~20の範囲の回転数(RPM)、0.10~15RPM/秒の範囲の回転加速度、及び0.10~0.15RPM/秒の範囲の減速度で回転させること
を含む、方法。 - 前記基板がEUVマスクブランクレチクルを含み、前記方法が、キャリアベース上にEUVマスクブランクレチクルを配置し、かつ前記回転可能なペデスタル上に前記キャリアベースを配置することをさらに含む、請求項6に記載の方法。
- 前記内側堆積リングを前記回転可能なペデスタルとともに回転させ、かつ外側堆積リングを静止状態に維持することをさらに含む、請求項7に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962944103P | 2019-12-05 | 2019-12-05 | |
US62/944,103 | 2019-12-05 | ||
US17/110,518 US12051576B2 (en) | 2020-12-03 | Multicathode deposition system and methods | |
US17/110,518 | 2020-12-03 | ||
PCT/US2020/063235 WO2021113590A1 (en) | 2019-12-05 | 2020-12-04 | Multicathode deposition system and methods |
Publications (2)
Publication Number | Publication Date |
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JP2023505280A JP2023505280A (ja) | 2023-02-08 |
JP7454049B2 true JP7454049B2 (ja) | 2024-03-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2022534138A Active JP7454049B2 (ja) | 2019-12-05 | 2020-12-04 | マルチカソード堆積システム及び方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7454049B2 (ja) |
KR (1) | KR20220106208A (ja) |
TW (1) | TW202129045A (ja) |
WO (1) | WO2021113590A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005026396A (ja) | 2003-07-01 | 2005-01-27 | Nikon Corp | 多層膜成膜方法、多層膜成膜装置、多層膜反射鏡及び露光装置 |
WO2014103168A1 (ja) | 2012-12-26 | 2014-07-03 | キヤノンアネルバ株式会社 | 基板処理装置 |
WO2018226683A1 (en) | 2017-06-05 | 2018-12-13 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
JP2019519910A (ja) | 2016-04-28 | 2019-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レチクル処理システム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101504085B1 (ko) * | 2006-12-19 | 2015-03-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 비접촉 프로세스 키트 |
JP5347868B2 (ja) * | 2009-09-24 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及びプラズマ成膜装置 |
US10886113B2 (en) * | 2016-11-25 | 2021-01-05 | Applied Materials, Inc. | Process kit and method for processing a substrate |
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2020
- 2020-11-30 TW TW109142010A patent/TW202129045A/zh unknown
- 2020-12-04 JP JP2022534138A patent/JP7454049B2/ja active Active
- 2020-12-04 KR KR1020227022759A patent/KR20220106208A/ko unknown
- 2020-12-04 WO PCT/US2020/063235 patent/WO2021113590A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005026396A (ja) | 2003-07-01 | 2005-01-27 | Nikon Corp | 多層膜成膜方法、多層膜成膜装置、多層膜反射鏡及び露光装置 |
WO2014103168A1 (ja) | 2012-12-26 | 2014-07-03 | キヤノンアネルバ株式会社 | 基板処理装置 |
JP2019519910A (ja) | 2016-04-28 | 2019-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レチクル処理システム |
WO2018226683A1 (en) | 2017-06-05 | 2018-12-13 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
Also Published As
Publication number | Publication date |
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JP2023505280A (ja) | 2023-02-08 |
WO2021113590A1 (en) | 2021-06-10 |
KR20220106208A (ko) | 2022-07-28 |
US20210172054A1 (en) | 2021-06-10 |
TW202129045A (zh) | 2021-08-01 |
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