JP7450651B2 - イメージセンサおよびその形成方法 - Google Patents
イメージセンサおよびその形成方法 Download PDFInfo
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- JP7450651B2 JP7450651B2 JP2022010932A JP2022010932A JP7450651B2 JP 7450651 B2 JP7450651 B2 JP 7450651B2 JP 2022010932 A JP2022010932 A JP 2022010932A JP 2022010932 A JP2022010932 A JP 2022010932A JP 7450651 B2 JP7450651 B2 JP 7450651B2
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- 238000000034 method Methods 0.000 title claims description 50
- 230000015572 biosynthetic process Effects 0.000 title description 6
- 238000006243 chemical reaction Methods 0.000 claims description 74
- 238000000926 separation method Methods 0.000 claims description 73
- 238000002955 isolation Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011368 organic material Substances 0.000 claims description 27
- 229910010272 inorganic material Inorganic materials 0.000 claims description 21
- 239000011147 inorganic material Substances 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 26
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 241001270131 Agaricus moelleri Species 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
以下、添付の図面と併せて本開示の実施形態を詳細に説明する。
102 感知装置
104 導電部
110、414 分離構造
112、416 分離壁
114、418 画素領域
120、420 光電変換層
130 透明電極層
140 カプセル化層
400 有機材料層
402 無機材料層
404 パターン化されたマスク層
406 第1のエッチングプロセス
408 開口部
410 分離キャップ
412 第2のエッチングプロセス
CF カラーフィルタ
H 高さ
ML マイクロレンズ
W1 画素幅
W2、W3 平均幅
Claims (4)
- 基板、
前記基板上に配置され、非導電性であり、前記基板上に複数の画素領域を定義する分離構造、
前記分離構造によって定義された前記画素領域に配置された光電変換層、
前記分離構造および前記光電変換層の上に配置された透明電極層、
前記透明電極層の上に配置されたカプセル化層、
前記画素領域に対応する前記カプセル化層の上に配置されたカラーフィルタ層、および
前記カラーフィルタ層上に配置されたマイクロレンズ層を含み、
前記分離構造は、前記画素領域間の前記光電変換層の電気信号のクロストークを防止し、
前記分離構造の上面に配置された分離キャップをさらに含み、
分離壁の幅は、前記分離キャップの幅より小さく、
前記分離キャップは無機材料を含み、
前記分離構造は有機材料を含む記載のイメージセンサ。 - 前記基板の各前記画素領域に埋設された感知装置をさらに含み、
前記感知装置は、導電部を介して前記光電変換層に電気的に接続される請求項1に記載のイメージセンサ。 - 基板を提供するステップ、
前記基板上に、非導電性であり、且つ前記基板上に複数の画素領域を定義する分離構造を形成するステップ、
前記分離構造によって定義された前記画素領域に配置される光電変換層を形成するステップであり、前記分離構造は前記画素領域間の前記光電変換層の電気信号のクロストークを防止する、ステップ、
前記分離構造および前記光電変換層の上に透明電極層を形成するステップ、
前記透明電極層の上にカプセル化層を形成するステップ、
前記画素領域に対応するカプセル化層の上に配置されたカラーフィルタ層を形成するステップ、および
前記カラーフィルタ層上に配置されたマイクロレンズ層を形成するステップを含み、
前記分離構造を形成するステップは、
前記基板上に有機材料層を形成するステップ、
前記有機材料層の上面を覆う無機材料層を形成するステップ、
前記無機材料層上にパターン化されたマスク層を形成するステップ、
前記無機材料層をエッチングして分離キャップを形成するステップであり、前記無機材料層は、異方性エッチングプロセスによって前記有機材料層の少なくとも一部が露出されるまでエッチングされる、ステップ、及び、
前記基板が露出されるまで前記有機材料層をエッチングし、分離壁を有する前記分離構造を形成するステップであり、前記有機材料層は、等方性エッチングプロセスによって、前記分離壁の幅が前記分離キャップの幅より小さくなるまでエッチングされる、ステップ
を含むイメージセンサの形成方法。 - 前記無機材料層のエッチングステップは、CF4、C4F8、またはそれらの組み合わせを含むエッチャントを用いるステップ、および前記有機材料層のエッチングステップは、CO2、N2、またはそれらの組み合わせを含むエッチャントを用いるステップを含む請求項3に記載のイメージセンサの形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/391,450 US20230029820A1 (en) | 2021-08-02 | 2021-08-02 | Image sensor and method of forming the same |
US17/391,450 | 2021-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023021898A JP2023021898A (ja) | 2023-02-14 |
JP7450651B2 true JP7450651B2 (ja) | 2024-03-15 |
Family
ID=78598815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2022010932A Active JP7450651B2 (ja) | 2021-08-02 | 2022-01-27 | イメージセンサおよびその形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230029820A1 (ja) |
EP (1) | EP4131379A1 (ja) |
JP (1) | JP7450651B2 (ja) |
KR (1) | KR20230019758A (ja) |
CN (1) | CN115701659A (ja) |
TW (1) | TWI793845B (ja) |
Citations (5)
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US20080224136A1 (en) | 2007-03-15 | 2008-09-18 | Hsin-Heng Wang | Image sensor and fabrication method thereof |
JP2010067827A (ja) | 2008-09-11 | 2010-03-25 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
WO2012035702A1 (ja) | 2010-09-17 | 2012-03-22 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP2015073070A (ja) | 2013-10-02 | 2015-04-16 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 光電変換層の隔壁を有する撮像装置 |
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US10504952B2 (en) * | 2017-08-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Increased optical path for long wavelength light by grating structure |
TWI649865B (zh) * | 2017-09-06 | 2019-02-01 | 財團法人工業技術研究院 | 影像感測器及其製造方法 |
US10644060B2 (en) * | 2017-09-28 | 2020-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with high quantum efficiency surface structure |
KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
US11581347B2 (en) * | 2019-06-21 | 2023-02-14 | Samsung Electronics Co., Ltd. | Image sensor |
JP2022553465A (ja) * | 2019-10-09 | 2022-12-23 | イルミナ インコーポレイテッド | 画像センサ構造 |
CN113161377A (zh) * | 2021-05-07 | 2021-07-23 | 上海芯物科技有限公司 | 一种图像传感器及其制作方法 |
-
2021
- 2021-08-02 US US17/391,450 patent/US20230029820A1/en active Pending
- 2021-11-08 TW TW110141492A patent/TWI793845B/zh active
- 2021-11-10 EP EP21207523.8A patent/EP4131379A1/en active Pending
- 2021-11-26 KR KR1020210166145A patent/KR20230019758A/ko not_active Application Discontinuation
- 2021-12-10 CN CN202111505309.2A patent/CN115701659A/zh active Pending
-
2022
- 2022-01-27 JP JP2022010932A patent/JP7450651B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033002A (ja) | 2003-07-14 | 2005-02-03 | Toshiba Corp | 放射線検出器およびその製造方法 |
US20080224136A1 (en) | 2007-03-15 | 2008-09-18 | Hsin-Heng Wang | Image sensor and fabrication method thereof |
JP2010067827A (ja) | 2008-09-11 | 2010-03-25 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
WO2012035702A1 (ja) | 2010-09-17 | 2012-03-22 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP2015073070A (ja) | 2013-10-02 | 2015-04-16 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 光電変換層の隔壁を有する撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20230019758A (ko) | 2023-02-09 |
TW202308139A (zh) | 2023-02-16 |
CN115701659A (zh) | 2023-02-10 |
JP2023021898A (ja) | 2023-02-14 |
US20230029820A1 (en) | 2023-02-02 |
EP4131379A1 (en) | 2023-02-08 |
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