JP7444875B2 - プラズマ処理装置用電圧波形生成器 - Google Patents
プラズマ処理装置用電圧波形生成器 Download PDFInfo
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- JP7444875B2 JP7444875B2 JP2021524442A JP2021524442A JP7444875B2 JP 7444875 B2 JP7444875 B2 JP 7444875B2 JP 2021524442 A JP2021524442 A JP 2021524442A JP 2021524442 A JP2021524442 A JP 2021524442A JP 7444875 B2 JP7444875 B2 JP 7444875B2
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- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 38
- 210000004027 cell Anatomy 0.000 description 28
- 238000010586 diagram Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
- H02M3/1586—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel switched with a phase shift, i.e. interleaved
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
- 容量結合プラズマ(CCP)リアクタ内、
- 電源電力生成器(RF電源)とABVGとの間の制御信号の直接相互接続(システムホストを介さない)が可能である、
のような他の構成においても使用され得る。プラズマを生成するために、別のソースが使用され得る(例えば、容量結合プラズマ、電子サイクロトロン共鳴、マグネトロン、DC電圧など)。
11 降圧セル
12 PWM生成器
13 フィルタ
14 変圧器
15 DC遮断キャパシタ
16 コントローラ、ABVGコントローラ
17 EMCフィルタ
18 線形増幅器、線形電力増幅器
19 出力端子
26 波形生成器
28 D/A変換器
36 フィールドプログラマブルゲートアレイ(FPGA)
100 誘導結合プラズマ(ICP)装置
101 基板
102 プラズマ反応器、プラズマチャンバ
103 プラズマ
104 プラズマ形成ガス
105 ステージまたはプラットフォーム
107 誘導コイル
108 誘導管
109 前駆体
111 半導体スイッチ
112 降圧セルインダクタ
120 RF電源
121 マッチングネットワーク
130 システムホストコントローラ
161 保護回路
162 保護回路
Claims (23)
- プラズマを生成するための手段と、
処理されるべき基板(101)を支持するための処理プラットフォーム(105)と、
前記処理プラットフォーム(105)に電気的に結合された出力(19)を備える電圧波形生成器(10)と
を備えるプラズマ処理装置(100)であって、
前記電圧波形生成器(10)が、
並列に配置され、前記出力(19)に結合された複数の第1の降圧変換器(11)であって、前記第1の降圧変換器(11)がアクティブにスイッチング可能な半導体スイッチ(111)を備える、複数の第1の降圧変換器(11)と、
パルス幅変調信号を介して前記アクティブにスイッチング可能な半導体スイッチ(111)を動作させるように構成された制御ユニット(16)と
を備え、
前記制御ユニット(16)が、前記複数の第1の降圧変換器(11)をインターリーブ方式において動作させるように構成される、
ことを特徴とする、プラズマ処理装置(100)。 - 各降圧変換器内の前記アクティブにスイッチング可能な半導体スイッチが、ハーフブリッジ構成において配置された第1の半導体スイッチと第2の半導体スイッチとを備える、請求項1に記載のプラズマ処理装置。
- 前記制御ユニットが、前記複数の第1の降圧変換器に適用される位相シフトされたパルス幅変調信号を生成するように構成される、請求項2に記載のプラズマ処理装置。
- 前記電圧波形生成器が、並列に配置され、前記出力に結合された複数の第2の降圧変換器を備え、前記第2の降圧変換器が、アクティブにスイッチング可能な半導体スイッチを備え、
前記制御ユニットが、パルス幅変調信号を介して前記第2の降圧変換器の前記アクティブにスイッチング可能な半導体スイッチを動作するように構成され、前記複数の第2の降圧変換器をインターリーブ方式において動作させるように構成され、
前記複数の第1の降圧変換器および前記複数の第2の降圧変換器が並列に配置された、
請求項1または2に記載のプラズマ処理装置。 - 前記第2の降圧変換器の前記アクティブにスイッチング可能な半導体スイッチが、前記第2の降圧変換器の各々において、ハーフブリッジ構成において配置された第3の半導体スイッチと第4の半導体スイッチとを備える、請求項4に記載のプラズマ処理装置。
- 前記電圧波形生成器が、前記複数の第1の降圧変換器と前記出力との間に変圧器を備える、請求項1から5のいずれか一項に記載のプラズマ処理装置。
- 前記電圧波形生成器が、前記第1の降圧変換器と前記出力との間にDC遮断キャパシタを備える、請求項1から6のいずれか一項に記載のプラズマ処理装置。
- 前記DC遮断キャパシタが、前記変圧器の二次側と前記出力との間に結合された、請求項6と併せた請求項7に記載のプラズマ処理装置。
- 前記電圧波形生成器が、前記出力に結合された線形電力増幅器を備える、請求項1から8のいずれか一項に記載のプラズマ処理装置。
- 前記制御ユニットが、前記線形電力増幅器の動作を制御するように動作可能である、請求項9に記載のプラズマ処理装置。
- 前記線形電力増幅器が、前記第1の降圧変換器と並列に結合された、請求項9または10に記載のプラズマ処理装置。
- 前記第1の降圧変換器とフィルタとが直列に形成されるように、前記第1の降圧変換器と直列に配置されたフィルタを備え、前記フィルタは、前記出力に結合され、前記線形電力増幅器が、前記第1の降圧変換器ならびに前記フィルタと並列に結合された、請求項9または10に記載のプラズマ処理装置。
- 前記電圧波形生成器が、前記基板の露出面に電圧バイアスを提供するように動作可能である、請求項1から12のいずれか一項に記載のプラズマ処理装置。
- 前記制御ユニットが、前記出力において所定の電圧波形を生成するために、前記第1の降圧変換器の前記アクティブにスイッチング可能な半導体スイッチを動作させるように構成された、請求項1から13のいずれか一項に記載のプラズマ処理装置。
- 前記電圧波形生成器が、前記出力においてAC電圧を生成するように動作可能である、請求項1から14のいずれか一項に記載のプラズマ処理装置。
- 前記制御ユニットには、前記電圧波形生成器の複数の動作モードが実装された、請求項1から15のいずれか一項に記載のプラズマ処理装置。
- 前記複数の動作モードが、異なる出力電圧レベルをもたらす動作モードを含む、請求項16に記載のプラズマ処理装置。
- 前記複数の動作モードが、異なる出力電流レベルをもたらす動作モードを含む、請求項16または17に記載のプラズマ処理装置。
- 前記複数の動作モードのうちの少なくとも1つの動作モードは、制限された出力電流および/または制限された出力電圧において動作することを含む、請求項16から18のいずれか一項に記載のプラズマ処理装置。
- 前記複数の動作モードが、前記アクティブにスイッチング可能な半導体スイッチの異なるスイッチング周波数によって区別される、請求項16から19のいずれか一項に記載のプラズマ処理装置。
- イオンエネルギー密度、および前記基板を通るイオン電流のうちの1つまたは複数であるプロセスパラメータを測定するように配置され、前記電圧波形生成器が、前記測定されたプロセスパラメータに基づく制御ループを備える、請求項1から20のいずれか一項に記載のプラズマ処理装置。
- ドライエッチング装置である、請求項1から21のいずれか一項に記載のプラズマ処理装置。
- プラズマ支援層堆積装置である、請求項1から21のいずれか一項に記載のプラズマ処理装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18205472.6 | 2018-11-09 | ||
EP18205472 | 2018-11-09 | ||
NL2022222A NL2022222B1 (en) | 2018-12-17 | 2018-12-17 | Voltage waveform generator for plasma processing apparatuses |
NL2022222 | 2018-12-17 | ||
PCT/EP2019/080405 WO2020094723A1 (en) | 2018-11-09 | 2019-11-06 | Voltage waveform generator for plasma processing apparatuses |
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JP2022506833A JP2022506833A (ja) | 2022-01-17 |
JP7444875B2 true JP7444875B2 (ja) | 2024-03-06 |
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JP2021524442A Active JP7444875B2 (ja) | 2018-11-09 | 2019-11-06 | プラズマ処理装置用電圧波形生成器 |
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US (1) | US11968771B2 (ja) |
EP (1) | EP3878002B1 (ja) |
JP (1) | JP7444875B2 (ja) |
KR (1) | KR20210090228A (ja) |
CN (1) | CN113169019A (ja) |
TW (1) | TW202035747A (ja) |
WO (1) | WO2020094723A1 (ja) |
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---|---|---|---|---|
US11545943B2 (en) | 2020-12-04 | 2023-01-03 | Mks Instruments, Inc. | Switched capacitor modulator |
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- 2019-11-06 CN CN201980071810.7A patent/CN113169019A/zh active Pending
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JP2017079127A (ja) | 2015-10-20 | 2017-04-27 | 国立研究開発法人産業技術総合研究所 | 誘導性結合プラズマ発生装置、セルフバイアス印加装置、プラズマ処理装置、プラズマ生成方法、およびセルフバイアス印加方法 |
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US20220013330A1 (en) | 2022-01-13 |
TW202035747A (zh) | 2020-10-01 |
EP3878002C0 (en) | 2023-06-07 |
KR20210090228A (ko) | 2021-07-19 |
EP3878002B1 (en) | 2023-06-07 |
JP2022506833A (ja) | 2022-01-17 |
CN113169019A (zh) | 2021-07-23 |
US11968771B2 (en) | 2024-04-23 |
WO2020094723A1 (en) | 2020-05-14 |
EP3878002A1 (en) | 2021-09-15 |
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