JP7441268B2 - Carrier for polishing or grinding and method for producing aluminum substrate for magnetic disk using same - Google Patents

Carrier for polishing or grinding and method for producing aluminum substrate for magnetic disk using same Download PDF

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Publication number
JP7441268B2
JP7441268B2 JP2022091572A JP2022091572A JP7441268B2 JP 7441268 B2 JP7441268 B2 JP 7441268B2 JP 2022091572 A JP2022091572 A JP 2022091572A JP 2022091572 A JP2022091572 A JP 2022091572A JP 7441268 B2 JP7441268 B2 JP 7441268B2
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carrier
polishing
center
circular holding
diameter
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JP2022107820A (en
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純一 林
靖雄 山本
憲一 水落
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Toyo Kohan Co Ltd
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Toyo Kohan Co Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Magnetic Record Carriers (AREA)

Description

本発明は、研磨用または研削用のキャリアおよびそれを用いた磁気ディスク用アルミ基
板の製造方法に関する。
The present invention relates to a polishing or grinding carrier and a method of manufacturing an aluminum substrate for a magnetic disk using the same.

磁気ディスク用基板には、円盤状のガラス基板やアルミ基板等が用いられている。これ
らの基板は、表裏面に対して研削処理や、必要に応じてめっき処理が施された後に、研磨
処理が施される。例えば研磨処理の場合、被処理材である研磨用基板を保持するため複数
個の円形保持孔を有する円盤状の研磨用キャリアが用いられ、該円形保持孔内に研磨用基
板が収容され、その状態で研磨用キャリアは適宜の研磨装置に装着されて、研磨用基板の
表裏面の研磨が行われる。研削処理を行う場合にも、適宜の研削装置を用いて、基板に対
してほぼ同様な研削処理が行われる。
A disk-shaped glass substrate, an aluminum substrate, or the like is used as a magnetic disk substrate. The front and back surfaces of these substrates are subjected to a grinding process and, if necessary, a plating process, and then a polishing process is performed. For example, in the case of polishing, a disc-shaped polishing carrier having a plurality of circular holding holes is used to hold the polishing substrate, which is the material to be processed, and the polishing substrate is accommodated in the circular holding holes. In this state, the polishing carrier is mounted on a suitable polishing device, and the front and back surfaces of the polishing substrate are polished. When performing the grinding process, substantially the same grinding process is performed on the substrate using an appropriate grinding device.

特許文献1あるいは特許文献2には、基板の研磨処理に用いる研磨装置の一例が記載さ
れている。図3および図4は、従来知られた研磨装置の一例を示しており、研磨装置は、
図3に示すように、それぞれ所定の回転比率で回転駆動されるインターナルギア101お
よびサンギア102を有する研磨用キャリア装着部100を備えている。また、研磨装置
は、図4に示すように、研磨用キャリア装着部100を上下から挟持するようにして、互
いに逆回転駆動される上定盤103および下定盤104を有している。
Patent Document 1 or Patent Document 2 describes an example of a polishing apparatus used for polishing a substrate. 3 and 4 show an example of a conventionally known polishing device, and the polishing device is
As shown in FIG. 3, the polishing carrier mounting section 100 includes an internal gear 101 and a sun gear 102, each of which is rotationally driven at a predetermined rotation ratio. Further, as shown in FIG. 4, the polishing apparatus includes an upper surface plate 103 and a lower surface plate 104 that are driven to rotate in opposite directions to each other so as to sandwich the polishing carrier mounting portion 100 from above and below.

研磨用キャリア装着部100には、図5に一例を示すよう形状の円盤状の研磨用キャリ
ア1の適数個(図3に示した例では4個)が取り付けられる。この例において、研磨用キ
ャリア1は、被研磨体である基板50(図4に点線で示される)を保持するための複数個
(図の例では5個)の同一径の円形保持孔2を有する基板保持部3と、該基板保持部3の
外周に設けられたピッチ円5をなすギア部4、とからなる円盤状のものであり、図3に示
すように、そのギア部4を研磨用キャリア装着部100のインターナルギア101および
サンギア102にかみ合わせるようにして、取り付けられている。インターナルギア10
1およびサンギア102が回転することにより、研磨用キャリア1は、歯数の差に応じた
遊星運動を行う。
An appropriate number (four in the example shown in FIG. 3) of disk-shaped polishing carriers 1, an example of which is shown in FIG. 5, are attached to the polishing carrier mounting portion 100. In this example, the polishing carrier 1 has a plurality of (five in the illustrated example) circular holding holes 2 of the same diameter for holding a substrate 50 (indicated by a dotted line in FIG. 4), which is the object to be polished. 3, and a gear part 4 forming a pitch circle 5 provided on the outer periphery of the substrate holding part 3. As shown in FIG. 3, the gear part 4 is polished. It is attached so as to mesh with the internal gear 101 and sun gear 102 of the carrier attachment part 100. internal gear 10
1 and sun gear 102 rotate, polishing carrier 1 performs planetary motion according to the difference in the number of teeth.

研磨用キャリア1における円形保持孔2の配置形態はいくつか存在するが、特許文献2
に記載の研磨用キャリア1においては、図5に示すように、複数個の円形保持孔2は研磨
用キャリア1の中心Oと各円形保持孔2の中心Pとの距離が等しい位置に配置されており
、各円形保持孔2の中心Pを結ぶ線は、直径Dの一つのピッチ円6を形成するようにされ
ている。
There are several arrangements of the circular holding holes 2 in the polishing carrier 1, but Patent Document 2
In the polishing carrier 1 described in , as shown in FIG. 5, the plurality of circular holding holes 2 are arranged at positions where the distance between the center O of the polishing carrier 1 and the center P of each circular holding hole 2 is equal. A line connecting the centers P of each circular holding hole 2 forms one pitch circle 6 having a diameter D.

被研磨体である円形の基板50の素材には、ガラス基板やアルミ基板が多く用いられ、
そのような基板50が前記した円形保持孔2内に収容された状態で、前記したように研磨
用キャリア1に対して遊星運動が与えられると同時に、上定盤103および下定盤104
は互いに逆回転し、それらに設けられた研磨パッド105,106によって、基板50の
表裏の面が研磨される。
Glass substrates and aluminum substrates are often used as the material for the circular substrate 50, which is the object to be polished.
With such a substrate 50 accommodated in the circular holding hole 2 described above, the polishing carrier 1 is subjected to planetary motion as described above, and at the same time, the upper surface plate 103 and the lower surface plate 104
rotate in opposite directions, and the front and back surfaces of the substrate 50 are polished by the polishing pads 105 and 106 provided thereon.

特開2000-288919号公報Japanese Patent Application Publication No. 2000-288919 WO2014/156798A1WO2014/156798A1

近年、情報記録媒体の記録密度が求められ、また、記録媒体自体をより薄手のものとす
ることが求められている。磁気ディスク用のガラス基板あるいはアルミ基板についても同
様であり、基板の薄板化が課題となっている。また、基板の薄板化とともに、研磨装置あ
るいは研削装置において、該基板を保持する前記したキャリアをより薄手のものとするこ
とも課題となっている。本発明者らは、研磨用あるいは研削用のキャリアの薄板化につい
て、鋭意研究を行ってきているが、その過程で、キャリアが薄手のものとなると、図5に
破線で囲った領域7のように、研磨用キャリア1に形成した円形保持孔2と円形保持孔2
との間の狭くなった箇所に、作業中に撓みが生じやすいこと、生じた撓みが引き金となっ
てキャリアが破損しやすいことを経験した。また、記録容量の増大化のために、磁気ディ
スク用基板等の大径化が検討されつつあるが、磁気ディスクの大径化に伴い、キャリアに
形成した円形保持孔も大型化され、互いに隣り合う円形保持孔2と円形保持孔2との間の
隙間が狭くなり、狭くなった箇所に撓みが生じやすくなると考えられる。
In recent years, there has been a demand for higher recording densities in information recording media, and there has also been a demand for thinner recording media themselves. The same applies to glass substrates or aluminum substrates for magnetic disks, and making the substrate thinner is an issue. In addition to thinner substrates, it has also become an issue to make the carriers that hold the substrates thinner in polishing or grinding devices. The present inventors have been conducting intensive research on making carriers for polishing or grinding thinner, but in the process, when the carrier becomes thinner, it becomes difficult to make carriers thinner, as shown in area 7 surrounded by broken lines in Figure 5. , a circular holding hole 2 formed in the polishing carrier 1 and a circular holding hole 2 formed in the polishing carrier 1.
I experienced that deflection easily occurs during work in the narrow area between the carrier, and that the deflection that occurs is likely to trigger damage to the carrier. In addition, in order to increase the recording capacity, increasing the diameter of magnetic disk substrates, etc. is being considered, but as the diameter of magnetic disks increases, the circular holding holes formed in the carrier also become larger and It is thought that the gap between the matching circular holding holes 2 becomes narrower, and bending is likely to occur in the narrowed area.

本発明は、上記の事情に鑑みてなされたものであり、現在、多く使用されている、外周
に形成したギア部のピッチ円の直径が294mmである研磨用あるいは研削用のキャリア
において、キャリアが薄手のものとなっても、また、基板を保持する円形保持孔の径が現
在よりも大きくなった場合でも、研磨装置あるいは研削装置による基板の研磨作業あるい
は研削作業中に、撓みや破損を生じ難くして、耐久性を向上させることを可能とした、研
磨用または研削用のキャリアを提供することを課題とする。
The present invention has been made in view of the above-mentioned circumstances, and is applicable to polishing or grinding carriers in which the diameter of the pitch circle of the gear portion formed on the outer periphery is 294 mm, which is currently widely used. Even if it becomes thinner, or even if the diameter of the circular holding hole that holds the board becomes larger than it is now, there is no risk of bending or breakage during polishing or grinding work of the board with polishing equipment or grinding equipment. An object of the present invention is to provide a carrier for polishing or grinding that is made difficult and has improved durability.

本発明による研磨装置または研削装置で用いられる研磨用または研削用のキャリアは、
研磨または研削の対象物である基板を保持するための複数個の同一径の円形保持孔を有す
る基板保持部と、該基板保持部の外周に設けられたギア部を有する円盤状であり、前記ギ
ア部のピッチ円の直径が294mmであるキャリアであって、前記複数個の円形保持孔は
前記キャリアの中心と前記各円形保持孔の中心との距離が等しい位置に配置されており、
各円形保持孔の中心同士を結ぶピッチ円の直径が175mm以上178mm以下であり、
かつ、前記キャリアの中心を通り、前記円形保持孔に接する接線において前記キャリアの
中心から前記接線の円形保持孔との接点までの間の距離を中心-接点間距離としたときに
、前記中心-接点間距離が72mm以上75mm以下であることを特徴とする。
The carrier for polishing or grinding used in the polishing device or grinding device according to the present invention includes:
The substrate holding part has a plurality of circular holding holes of the same diameter for holding the substrate that is the object to be polished or ground, and the gear part is provided on the outer periphery of the substrate holding part. A carrier in which the pitch circle of the gear part has a diameter of 294 mm, the plurality of circular holding holes are arranged at positions where the distance between the center of the carrier and the center of each circular holding hole is equal,
The diameter of the pitch circle connecting the centers of each circular holding hole is 175 mm or more and 178 mm or less,
And, when the distance from the center of the carrier to the point of contact with the circular holding hole on a tangent line passing through the center of the carrier and touching the circular holding hole is defined as the center-to-contact distance, the center - It is characterized in that the distance between the contacts is 72 mm or more and 75 mm or less.

本願において、研磨装置における研磨の対象物はアルミ基材上にNi-Pめっき皮膜が
形成された状態のアルミ基板であり、研磨面はNi-Pめっき皮膜の表面になる。一方、
研削装置における研削の対象物はめっき皮膜を形成する前のアルミ基材であり、研削面は
アルミ基材の表面になる。
In the present application, the object to be polished in the polishing apparatus is an aluminum substrate with a Ni--P plating film formed on the aluminum base material, and the polished surface is the surface of the Ni--P plating film. on the other hand,
The object to be ground in the grinding device is an aluminum base material before a plating film is formed, and the ground surface is the surface of the aluminum base material.

後の実施例に記載するように、本発明によるキャリアでは、厚みが同じであり、かつ、
円形保持孔の直径が同じものであっても、前記各円形保持孔の中心を結ぶピッチ円の直径
が173mmであり、前記中心-接点間距離が71.8mmである従来の研磨用キャリア
と比較して、正常状態で使用される使用時間を、ほぼ2倍にまで延長することができた。
円形保持孔の直径を2mm程度大きくしても、前記各円形保持孔の中心を結ぶピッチ円の
直径、および前記中心-接点間距離を、本発明の範囲内とすることにより、やはり正常状
態で使用される使用時間を長くすることができる。
As described in the later examples, carriers according to the invention have the same thickness and
Even though the diameters of the circular holding holes are the same, the diameter of the pitch circle connecting the centers of each circular holding hole is 173 mm, compared to a conventional polishing carrier in which the distance between the center and the contact point is 71.8 mm. As a result, the usage time under normal conditions could be extended to almost double.
Even if the diameter of the circular holding hole is increased by about 2 mm, the diameter of the pitch circle connecting the centers of the respective circular holding holes and the distance between the center and the contact point are within the range of the present invention, so that the normal state can still be maintained. The usage time can be increased.

すなわち、本発明によるキャリアを用いることにより、被研磨体あるいは被研削体であ
る基板の薄板化と大径化の双方に適切に対処することが可能となる。
That is, by using the carrier according to the present invention, it is possible to appropriately deal with both the reduction in thickness and the increase in diameter of the object to be polished or the substrate that is the object to be ground.

本発明による研磨用キャリアの厚みは、被研磨体あるいは被研削体の厚みよりも薄けれ
ばよいが、0.25mm~0.6mmの厚みであることが好ましく、0.5mm~0.6
mmの厚みであることがより好ましい。
The thickness of the polishing carrier according to the present invention may be thinner than the thickness of the object to be polished or the object to be ground, but it is preferably 0.25 mm to 0.6 mm, and preferably 0.5 mm to 0.6 mm.
More preferably, the thickness is mm.

本発明によるキャリアにおいて、素材としては、アラミド樹脂、FRP、PC等を用い
ることができ、特にアラミド樹脂が好ましい。キャリアには、これらの素材を単独で用い
てもよく、また、アラミド樹脂、ポリエステル樹脂またはCFRP、アラミド樹脂の3層
構造としてもよい。
In the carrier according to the present invention, aramid resin, FRP, PC, etc. can be used as the material, and aramid resin is particularly preferred. The carrier may be made of these materials alone, or may have a three-layer structure of aramid resin, polyester resin, CFRP, and aramid resin.

本発明は、さらに、上記したいずれかのキャリアにおける円形保持孔内に被研磨体であ
るアルミ基板を保持する工程と、アルミ基板を保持したキャリアを研磨装置に装着してア
ルミ基板の両面を研磨する工程と、を少なくとも含むことを特徴とする磁気ディスク用ア
ルミ基板の製造方法をも開示する。
The present invention further includes a step of holding an aluminum substrate as an object to be polished in a circular holding hole in any of the carriers described above, and mounting the carrier holding the aluminum substrate on a polishing device to polish both sides of the aluminum substrate. A method for manufacturing an aluminum substrate for a magnetic disk is also disclosed, the method comprising at least the steps of:

本発明による研磨用または研削用のキャリアを用いることにより、研磨装置または研削
装置による基板の研磨作業または研削作業において、基板の薄板化および大径化に対応し
ながら、長時間の研磨処理または研削処理が可能となる。
By using the carrier for polishing or grinding according to the present invention, in the polishing or grinding work of a substrate using a polishing device or a grinding device, long-time polishing processing or grinding can be performed while responding to thinner substrates and larger diameter substrates. processing becomes possible.

一実施の形態である研磨用キャリアを示す平面図。FIG. 1 is a plan view showing a polishing carrier according to an embodiment. 研磨用キャリアの部分拡大図。A partially enlarged view of the polishing carrier. 研磨装置を説明するための図。A diagram for explaining a polishing device. 研磨装置の部分的断面図。A partial cross-sectional view of the polishing device. 研磨用キャリアに生じる撓み領域を説明する図。FIG. 3 is a diagram illustrating a deflection area that occurs in a polishing carrier.

以下、図面を参照しながら、本発明によるキャリアの一実施の形態を、キャリアが研磨
用キャリアである場合を例として、説明する。なお、以下に説明する研磨用キャリアは、
図3および図4を参照して先に説明したような、従来知られた研磨装置(あるいは研磨用
キャリア装着部)100と共に用いることができる。よって、以下の説明では、研磨用キ
ャリアについてのみを説明し、それを用いる研磨装置および研磨用キャリア装着部100
についての説明は、省略する。
Hereinafter, an embodiment of the carrier according to the present invention will be described with reference to the drawings, taking as an example the case where the carrier is a polishing carrier. The polishing carrier described below is
It can be used in conjunction with the conventionally known polishing apparatus (or polishing carrier attachment part) 100 as described above with reference to FIGS. 3 and 4. Therefore, in the following description, only the polishing carrier will be described, and the polishing apparatus using it and the polishing carrier mounting section 100 will be described.
The explanation for this will be omitted.

図1に示す研磨用キャリア10は、アラミド樹脂製であり、全体として、中心Oを持つ
円盤状であり、厚みは0.5mmである。研磨用キャリア10は、本体部である基板保持
部13と、基板保持部13の外周に形成したギア部14とを有している。前記ギア部14
がなすピッチ円15の中心は、研磨用キャリア10の中心Oと共通であり、ピッチ円15
の直径は、294mmである。なお、研磨用キャリア10の厚みは、0.25mm~0.
6mmの範囲であれば、任意であってよい。被研磨体である円形の基板50の厚みに応じ
で、実験的に最適値を設定すればよい。
The polishing carrier 10 shown in FIG. 1 is made of aramid resin, has a disk shape as a whole with a center O, and has a thickness of 0.5 mm. The polishing carrier 10 has a substrate holding section 13 which is a main body section, and a gear section 14 formed on the outer periphery of the substrate holding section 13. The gear part 14
The center of the pitch circle 15 formed by
The diameter is 294mm. Note that the thickness of the polishing carrier 10 is 0.25 mm to 0.25 mm.
As long as it is within the range of 6 mm, it may be arbitrary. The optimum value may be experimentally set depending on the thickness of the circular substrate 50 that is the object to be polished.

基板保持部13には、被研磨体である円形の基板50(例えば、メッキを施したアルミ
基材)を保持するための5個の同一径である円形保持孔12が、基板保持部13に開口し
て形成されている。本実施形態では、互いに同一径を有する5個の円形保持孔12が形成
されている。各円形保持孔12の中心Pと研磨用キャリア10の中心Oとの距離s1はす
べて等しく、したがって、5つの円形保持孔12の中心Pを結ぶ円(ピッチ円16)の中
心は、研磨用キャリア10の中心Oと同じである。研磨用キャリア10において、ピッチ
円16の直径D(=2×s1)は、175mm以上178mm以下の範囲である。また、
5つの円形保持孔12は、周方向に等間隔で配置されており、隣接する円形保持孔12、
12の中心P,Pと研磨用キャリア10の中心Oとを結ぶ2本の直線がなす角度αは、す
べて360/5=72度である。
The substrate holder 13 has five circular holding holes 12 of the same diameter for holding a circular substrate 50 (for example, a plated aluminum base material) that is an object to be polished. It is formed with an opening. In this embodiment, five circular holding holes 12 having the same diameter are formed. The distances s1 between the center P of each circular holding hole 12 and the center O of the polishing carrier 10 are all equal, so the center of the circle (pitch circle 16) connecting the centers P of the five circular holding holes 12 is It is the same as the center O of 10. In the polishing carrier 10, the diameter D (=2×s1) of the pitch circle 16 is in the range of 175 mm or more and 178 mm or less. Also,
The five circular holding holes 12 are arranged at equal intervals in the circumferential direction, and the adjacent circular holding holes 12,
The angle α formed by the two straight lines connecting the centers P, P of the polishing carrier 12 and the center O of the polishing carrier 10 is 360/5=72 degrees.

また、図2の部分拡大図に示すように、研磨用キャリア10の中心Oを通り、各円形保
持孔12に接するように引いた接線17において、研磨用キャリア10の中心Oから、接
線17の円形保持孔12との接点tまでの間の距離を中心-接点間距離s2としたときに
、中心-接点間距離s2は72mm以上75mm以下となるようにされている。円形保持
孔12の中心Pと研磨用キャリア10の中心Oとの距離s1が一定値のとき、中心-接点
間距離s2の値に、円形保持孔12の半径rの大きさは左右される。
Further, as shown in the partially enlarged view of FIG. 2, at a tangent line 17 drawn so as to pass through the center O of the polishing carrier 10 and touch each circular holding hole 12, from the center O of the polishing carrier 10, When the distance between the circular holding hole 12 and the contact point t is defined as the center-to-contact distance s2, the center-to-contact distance s2 is set to be 72 mm or more and 75 mm or less. When the distance s1 between the center P of the circular holding hole 12 and the center O of the polishing carrier 10 is a constant value, the size of the radius r of the circular holding hole 12 depends on the value of the center-contact distance s2.

今、一例として、ピッチ円16の直径Dを175mm(s1=87.5mm)とし、中
心-接点間距離s2が72mmの場合と、75mmの場合での、円形保持孔12の半径r
を求めると、r=(s1)-(s2) から演算して、中心-接点間距離s2が7
2mmの場合は、円形保持孔12の半径rは略50mmとなり、中心-接点間距離s2が
75mmの場合は、rは略45mmとなる。また、ピッチ円16の直径Dを178mm(
s1=89mm)とし、中心-接点間距離s2が72mmの場合と、75mmの場合での
、円形保持孔12の半径rを求めると、中心-接点間距離s2が72mmの場合には、円
形保持孔12の半径rは略52mm、中心-接点間距離s2が75mmの場合には、円形
保持孔12の半径rは略48mmとなる。
Now, as an example, let us assume that the diameter D of the pitch circle 16 is 175 mm (s1 = 87.5 mm), and the radius r of the circular holding hole 12 when the center-to-contact distance s2 is 72 mm and 75 mm.
Calculating from r 2 = (s1) 2 - (s2) 2 , the center-to-contact distance s2 is 7.
When the diameter is 2 mm, the radius r of the circular holding hole 12 is approximately 50 mm, and when the center-to-contact distance s2 is 75 mm, r is approximately 45 mm. In addition, the diameter D of the pitch circle 16 is set to 178 mm (
s1 = 89 mm), and find the radius r of the circular holding hole 12 when the center-to-contact distance s2 is 72 mm and when the center-to-contact distance s2 is 72 mm. The radius r of the hole 12 is approximately 52 mm, and when the center-to-contact distance s2 is 75 mm, the radius r of the circular holding hole 12 is approximately 48 mm.

すなわち、上記の研磨用キャリア10において、ピッチ円16の直径D(=2×s1)
が175mm以上178mm以下であるときに、円形保持孔12の半径rは45mm~5
2mmの範囲となり、結果、周方向に隣接する2つの円形保持孔12,12の円弧同士が
最も近接する箇所での距離d(図1を参照)は、略4mm~7mmとなる。
That is, in the polishing carrier 10 described above, the diameter D of the pitch circle 16 (=2×s1)
is 175 mm or more and 178 mm or less, the radius r of the circular holding hole 12 is 45 mm to 5
As a result, the distance d (see FIG. 1) at the point where the arcs of two circumferentially adjacent circular holding holes 12, 12 are closest to each other is approximately 4 mm to 7 mm.

なお、図5に基づき説明したピッチ円5の直径が294mmである従来から一般的に用
いられてきた研磨用キャリア1においては、ピッチ円6の直径Dは173mmであり、中
心-接点間距離s2に相当する距離は71.8mmであって、円形保持孔2の半径rは略
48mmである。5個の円形保持孔2が等しい周方向の角度で配置しているとした場合に
、周方向に隣接する2つの円形保持孔2,2の円弧同士が最も近接する箇所での距離dは
、約0.5mm~3mmであり、本発明による研磨用キャリア10の場合よりも、周方向
に隣接する2つの円形保持孔2,2の間隔は狭い。
In addition, in the conventionally commonly used polishing carrier 1 in which the diameter of the pitch circle 5 is 294 mm as explained based on FIG. 5, the diameter D of the pitch circle 6 is 173 mm, and the center-to-contact distance s2 The distance corresponding to this is 71.8 mm, and the radius r of the circular holding hole 2 is approximately 48 mm. When the five circular holding holes 2 are arranged at equal circumferential angles, the distance d at the point where the arcs of two circumferentially adjacent circular holding holes 2 are closest to each other is: The distance between the two circumferentially adjacent circular holding holes 2, 2 is approximately 0.5 mm to 3 mm, which is narrower than in the case of the polishing carrier 10 according to the present invention.

上記のように、本発明による研磨用キャリア10では、前記したピッチ円15の直径が
294mmである従来一般的に用いられてきた研磨用キャリアであっても、前記した直径
D(各円形保持孔12の中心Pを結ぶピッチ円16の直径)と、s2(研磨用キャリアの
中心Oから円形保持孔12に接するように引いた接線17において、研磨用キャリアの中
心Oから接線17の円形保持孔12との接点tまでの間の距離である中心-接点間距離)
とを、特定の範囲に限定したことにより、周方向に隣接する2つの円形保持孔12,12
の間隔を広くすることが可能となり、その結果、円形保持孔12,12の間に撓みが生じ
るのを低減できるようになって、研磨用キャリアの使用時間を長くすることが可能となる
As described above, in the polishing carrier 10 according to the present invention, even if the pitch circle 15 has a diameter of 294 mm, which is a commonly used polishing carrier, the pitch circle 15 has a diameter of 294 mm. 12) and s2 (the diameter of the pitch circle 16 connecting the center P of the polishing carrier) and s2 (the diameter of the circular holding hole 17 drawn from the center O of the polishing carrier to the tangent line 17 drawn from the center O of the polishing carrier to touch the circular holding hole 12). (center-to-contact distance, which is the distance between contact point t with 12)
By limiting this to a specific range, two circular holding holes 12, 12 adjacent in the circumferential direction
As a result, it becomes possible to reduce the occurrence of deflection between the circular holding holes 12, 12, and it becomes possible to extend the usage time of the polishing carrier.

上記の研磨用キャリア10において、形成する円形保持孔12の数に制限はない。周方
向に配置されている円形保持孔12同士が衝接あるいは重ならないことを条件に任意であ
る。前記ギア部14のピッチ円15の直径が294mmであるキャリアにおいては、最大
数は5個であるが、4個以下であってもよい。生産性を考慮すると、5個であることが望
ましい。また、円形保持孔12の中心P同士を結ぶピッチ円16の直径Dが178mmを
超えると、円形保持孔12の外周と前記ピッチ円15との間の距離が狭くなりすぎて基板
保持部13の強度が低下するので、好ましくない。
In the polishing carrier 10 described above, there is no limit to the number of circular holding holes 12 formed. This is optional on the condition that the circular holding holes 12 arranged in the circumferential direction do not collide or overlap each other. In a carrier in which the pitch circle 15 of the gear portion 14 has a diameter of 294 mm, the maximum number is five, but the number may be four or less. Considering productivity, it is desirable that the number is five. Furthermore, if the diameter D of the pitch circle 16 connecting the centers P of the circular holding holes 12 exceeds 178 mm, the distance between the outer periphery of the circular holding hole 12 and the pitch circle 15 becomes too narrow, and the substrate holding part 13 This is not preferred because the strength decreases.

前記のように、本発明による研磨用キャリア10において、円形保持孔12の半径rは
45mm~52mm(直径90mm~105mm)が好ましく、47.5mm~48.5
mmがより好ましい範囲となる。したがって、ギア部のピッチ円の直径が294mmであ
る従来のキャリアと同じ大きさのキャリアでありながら、表1での本発明品2に示すよう
に、より大径の研磨用基板50を用いることも可能となる。また、後の実施例に示すよう
に、同じ直径の基板を用いる場合に、キャリアの有効使用時間が長くなる。
As mentioned above, in the polishing carrier 10 according to the present invention, the radius r of the circular holding hole 12 is preferably 45 mm to 52 mm (diameter 90 mm to 105 mm), and preferably 47.5 mm to 48.5 mm.
A more preferable range is mm. Therefore, although the carrier has the same size as the conventional carrier in which the diameter of the pitch circle of the gear part is 294 mm, it is possible to use a polishing substrate 50 with a larger diameter as shown in Invention Product 2 in Table 1. is also possible. Furthermore, as shown in the later examples, when using substrates of the same diameter, the effective usage time of the carrier becomes longer.

Figure 0007441268000001
Figure 0007441268000001

(実施例)
以下、本発明者らが行った実施例と比較例を説明する。
研磨用キャリアとして、図1に示した形状の研磨用キャリア10を用いた。素材はアラ
ミド樹脂を用い、厚み0.5mmである。また、外周に形成したギア部14が形成するピ
ッチ円15の直径は、実施例および比較例のいずれも294mmである。
(Example)
Examples and comparative examples conducted by the present inventors will be described below.
As the polishing carrier, a polishing carrier 10 having the shape shown in FIG. 1 was used. The material used is aramid resin, and the thickness is 0.5 mm. Further, the diameter of the pitch circle 15 formed by the gear portion 14 formed on the outer periphery is 294 mm in both the example and the comparative example.

比較例は、前記表1に示した従来のキャリアに相当する(従来品)。すなわち、円形保
持孔12の中心Pを結ぶピッチ円16の直径D(2×s1)を173mm、中心-接点間
距離s2を71.8mmとした。それにより、直径が96.5mm(r=48.25mm
)である円形保持孔12が周方向に等間隔で5個形成される。
The comparative example corresponds to the conventional carrier shown in Table 1 above (conventional product). That is, the diameter D (2×s1) of the pitch circle 16 connecting the center P of the circular holding hole 12 was 173 mm, and the center-to-contact distance s2 was 71.8 mm. As a result, the diameter is 96.5 mm (r = 48.25 mm
) are formed at equal intervals in the circumferential direction.

実施例として、同じ素材のキャリアを用いたが、円形保持孔12の中心Pを結ぶピッチ
円16の直径D(2×s1)を176mm、前記中心-接点間距離s2を73.6mmと
した(本発明品1)。この場合は、直径が96.5mm(r=48.25mm)である円
形保持孔12が周方向に等間隔で5個形成される。
As an example, carriers made of the same material were used, but the diameter D (2 x s1) of the pitch circle 16 connecting the center P of the circular holding hole 12 was 176 mm, and the distance s2 between the center and the contact point was 73.6 mm ( Invention product 1). In this case, five circular holding holes 12 each having a diameter of 96.5 mm (r=48.25 mm) are formed at equal intervals in the circumferential direction.

同じ研磨装置(システム精工株式会社製、品番:PH1308/750-50)を用い
、比較例のキャリア(従来品)および実施例のキャリア(本発明品1)における円形保持
孔内に、被研磨体であるアルミ基板(直径95m、厚み0.635mm)を保持して、研
磨作業を行い、キャリアが正常に機能しなくなるまでの、有効使用時間を測定した。結果
、比較例では112時間であり、実施例では246時間であった。
Using the same polishing device (manufactured by System Seiko Co., Ltd., product number: PH1308/750-50), the object to be polished was placed in the circular holding hole of the carrier of the comparative example (conventional product) and the carrier of the example (product 1 of the present invention). An aluminum substrate (diameter 95 m, thickness 0.635 mm) was held and polished, and the effective usage time until the carrier stopped functioning properly was measured. As a result, it was 112 hours in the comparative example and 246 hours in the example.

従来から使用されているキャリアよりも実施例のキャリアの有効使用時間が長くなった
のは、周方向に隣接する円形保持孔12,12間の距離が大きくなったことが主因である
と考えられる。
The reason why the effective usage time of the carrier of the example was longer than that of conventionally used carriers is considered to be mainly due to the increased distance between the circumferentially adjacent circular holding holes 12, 12. .

10…研磨用または研削用のキャリア、
12…円形保持孔、
13…基板保持部、
14…ギア部、
15…ギア部がなすピッチ円、
16…円形保持孔の中心を結ぶピッチ円、
17…研磨用キャリアの中心を通り、各円形保持孔に接する接線、
50…被研磨体である円形の基板、
O…キャリアの中心、
P…円形保持孔の中心、
r=円形保持孔の半径、
s1…円形保持孔の中心Pと研磨用キャリアOの中心との距離、
s2…研磨用キャリアの中心Oから接線17の円形保持孔12との接点tまでの間の距離

d:周方向に隣接する円形保持孔と円形保持孔との間の距離、
D…ピッチ円16の直径(=2×s1)
10...Carrier for polishing or grinding,
12...Circular holding hole,
13...Substrate holding part,
14... Gear part,
15... Pitch circle formed by the gear part,
16... Pitch circle connecting the centers of the circular holding holes,
17...Tangential line passing through the center of the polishing carrier and touching each circular holding hole,
50...Circular substrate which is the object to be polished,
O...The center of your career,
P...center of circular holding hole,
r=radius of circular holding hole;
s1...distance between the center P of the circular holding hole and the center of the polishing carrier O,
s2...Distance from the center O of the polishing carrier to the contact point t of the tangent 17 with the circular holding hole 12,
d: distance between circumferentially adjacent circular holding holes;
D...Diameter of pitch circle 16 (=2 x s1)

Claims (2)

研磨装置または研削装置で用いられる研磨用または研削用のキャリアであり、前記キャリアは、研磨または研削の対象物である基板を保持するための複数個の同一径の円形保持孔を有する基板保持部と、該基板保持部の外周に設けられたギア部を有する円盤状であり、前記ギア部のピッチ円の直径が294mmであるキャリアであって、
前記キャリアは
前記複数個の円形保持孔は前記キャリアの中心と前記各円形保持孔の中心との距離が等しい位置に配置されており、
各円形保持孔の中心同士を結ぶピッチ円の直径が175mm以上178mm以下であり、かつ、前記キャリアの中心を通り、前記円形保持孔に接する接線において前記キャリアの中心と前記接線と円形保持孔の接点間の距離を中心-接点間距離としたときに、前記中心-接点間距離が72mm以上75mm以下であり、
前記キャリアは、厚みが0.25mm~0.6mmであり、
前記キャリアの隣接する2つの円形保持孔の円弧同士が最も近接する箇所での距離(d)が4mm以上7mm以下であり、
前記キャリアは、素材がアラミド樹脂であることを特徴とするキャリア。
A carrier for polishing or grinding used in a polishing device or a grinding device, the carrier having a substrate holding portion having a plurality of circular holding holes of the same diameter for holding a substrate that is an object to be polished or ground. and a disc-shaped carrier having a gear part provided on the outer periphery of the substrate holding part , and a pitch circle of the gear part has a diameter of 294 mm ,
The carrier is
The plurality of circular holding holes are arranged at positions where the distance between the center of the carrier and the center of each circular holding hole is equal,
The diameter of a pitch circle connecting the centers of each circular holding hole is 175 mm or more and 178 mm or less, and a tangent line passing through the center of the carrier and touching the circular holding hole connects the center of the carrier with the tangent line and the circular holding hole. When the distance between the contacts is defined as the center-to-contact distance, the center-to-contact distance is 72 mm or more and 75 mm or less,
The carrier has a thickness of 0.25 mm to 0.6 mm,
The distance (d) at the point where the arcs of two adjacent circular holding holes of the carrier are closest to each other is 4 mm or more and 7 mm or less,
The carrier is characterized in that the carrier is made of aramid resin.
前記キャリアは、アラミド樹脂、ポリエステル樹脂またはCFRP、アラミド樹脂の3層構造であることを特徴とする請求項1に記載のキャリア。 The carrier according to claim 1, wherein the carrier has a three-layer structure of an aramid resin, a polyester resin, or CFRP, and an aramid resin.
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