JP7433368B2 - プロセスレシピ探索装置 - Google Patents
プロセスレシピ探索装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 57
- 230000008569 process Effects 0.000 title claims description 40
- 238000012545 processing Methods 0.000 claims description 146
- 238000005530 etching Methods 0.000 claims description 119
- 238000003754 machining Methods 0.000 claims description 54
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- 238000005259 measurement Methods 0.000 description 34
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- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
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- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41865—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by job scheduling, process planning, material flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
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- G06T2207/30—Subject of image; Context of image processing
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- G06T2207/30148—Semiconductor; IC; Wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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Description
dD=D-pD
dW=(W-pW)/2
で表される。
dD1=a×dD
dW1=b×dW
強調倍率a,bは、予測加工形状とターゲット形状との差分から自動で求めてもよいし、ユーザがGUI上で指定してもよい。
eD=D+dD1
eW=W+2×dW1
とする。図4Aに示す通常表示と比べると、ターゲット形状からの差異を視覚的にはっきりと描画することが可能な上に、ターゲット形状を基準にトレンチ幅や深さといった異なる部分の形状の変化を同時に見ることが可能となる。
a<(T-D)/dD
b<(Y-W)/(2×dW)
の関係を満たす必要がある。ウィンドウの表示方法によっては余白部分をオフセットとして考慮することもある。
dD3=DA-DB
dW3=(WA-WB)/2
で表される。
dD4=c×dD3
dW4=d×dW3
強調倍率c,dは基準画像Aと比較画像Bとの差分から自動で求めてもよいし、ユーザがGUI上で指定してもよい。以上のように定義された誤差dD4とdW4を用いて、強調表示する比較画像Bのトレンチ形状の深さfDと幅fWをそれぞれ、
fD=D+dD4
fW=W+2×dW4
とする。
Claims (5)
- 試料を所望の形状にエッチングするよう設定されたプラズマ処理装置のパラメータであるエッチングレシピを探索するプロセスレシピ探索装置であって、
複数の形状要素により前記所望の形状を定義するターゲット形状を決定するターゲット形状決定部と、
前記プラズマ処理装置のパラメータから前記プラズマ処理装置による前記試料の加工形状を予測する機械学習モデルを作成する機械学習モデル作成部と、
前記機械学習モデルを用いて前記エッチングレシピの候補となる候補エッチングレシピを探索するレシピ探索部と、
前記機械学習モデルを用いて予測された前記候補エッチングレシピによる前記試料の予測加工形状を表示装置に表示させ、表示された前記候補エッチングレシピから選択された候補エッチングレシピを、前記プラズマ処理装置に設定して前記試料をエッチングさせる加工レシピとして決定する加工レシピ決定部と、
前記予測加工形状と前記ターゲット形状との差異を強調して前記表示装置に表示する表示形状強調処理部とを有するプロセスレシピ探索装置。 - 請求項1において、
前記表示形状強調処理部は、前記予測加工形状を、前記ターゲット形状と前記予測加工形状との差異を前記形状要素ごとに定められる強調倍率で拡大して前記表示装置に表示するプロセスレシピ探索装置。 - 請求項1において、
前記表示形状強調処理部は、前記予測加工形状と前記ターゲット形状との差異を前記予測加工形状上に視認可能に前記表示装置に表示し、
前記予測加工形状と前記ターゲット形状との差異を、前記予測加工形状における前記形状要素の色あるいは線幅で表示する、または前記予測加工形状の前記ターゲット形状からの外れ量を表すベクトルを当該形状要素に重ねて表示するプロセスレシピ探索装置。 - 請求項1において、
前記加工レシピ決定部は、前記機械学習モデルを用いて予測された、前記候補エッチングレシピに含まれる少なくとも1つのパラメータを変化させた感度評価エッチングレシピによる前記試料の予測加工形状を前記表示装置に表示させ、
前記表示形状強調処理部は、前記候補エッチングレシピによる予測加工形状及び前記感度評価エッチングレシピによる予測加工形状を、それぞれ前記ターゲット形状との差異を強調した状態で重畳して前記表示装置に表示するプロセスレシピ探索装置。 - 請求項1において、
前記レシピ探索部は、前記プラズマ処理装置の前記候補エッチングレシピがとりうるパラメータの範囲を前記表示装置に表示させ、前記プラズマ処理装置のパラメータ間の制約が指定された場合には、制約されたパラメータ空間で前記候補エッチングレシピの探索を行うプロセスレシピ探索装置。
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JP2023136155A JP2023159348A (ja) | 2021-07-08 | 2023-08-24 | エッチングレシピ探索方法及び半導体装置製造システム |
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US17/370,131 | 2021-07-08 | ||
US17/370,131 US20230012173A1 (en) | 2021-07-08 | 2021-07-08 | Process recipe search apparatus, etching recipe search method and semiconductor device manufacturing system |
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US (1) | US20230012173A1 (ja) |
JP (2) | JP7433368B2 (ja) |
KR (1) | KR20230009298A (ja) |
CN (1) | CN115602517A (ja) |
TW (1) | TW202303754A (ja) |
Citations (5)
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JP2013069231A (ja) | 2011-09-26 | 2013-04-18 | Fanuc Ltd | 工具の軌跡表示機能を備えた数値制御装置 |
JP2018049936A (ja) | 2016-09-21 | 2018-03-29 | 株式会社日立製作所 | 探索装置および探索方法 |
JP2019040984A (ja) | 2017-08-24 | 2019-03-14 | 株式会社日立製作所 | 探索装置及び探索方法 |
JP2019159864A (ja) | 2018-03-14 | 2019-09-19 | 株式会社日立ハイテクノロジーズ | 探索装置、探索方法及びプラズマ処理装置 |
WO2021111511A1 (ja) | 2019-12-03 | 2021-06-10 | 株式会社日立ハイテク | 探索装置、探索プログラム及びプラズマ処理装置 |
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JP6712453B2 (ja) * | 2015-10-16 | 2020-06-24 | 富士フイルム株式会社 | 拡張現実提供システム及び方法、情報処理装置、並びにプログラム |
KR102670400B1 (ko) | 2017-01-11 | 2024-05-30 | 엘지전자 주식회사 | 위상천이장치 및 이를 이용한 방법 |
JP6995191B2 (ja) * | 2018-04-10 | 2022-01-14 | 株式会社日立製作所 | 加工レシピ生成装置 |
JP7063165B2 (ja) * | 2018-07-26 | 2022-05-09 | 富士通株式会社 | 計測装置、計測方法及び計測プログラム |
US20210366101A1 (en) * | 2020-05-22 | 2021-11-25 | Printforia | Systems, methods, storage media, and computing platforms for scanning items at the point of manufacturing |
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2021
- 2021-07-08 US US17/370,131 patent/US20230012173A1/en active Pending
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- 2022-06-13 KR KR1020220071357A patent/KR20230009298A/ko unknown
- 2022-06-15 CN CN202210677275.3A patent/CN115602517A/zh active Pending
- 2022-06-17 JP JP2022097756A patent/JP7433368B2/ja active Active
- 2022-07-05 TW TW111125102A patent/TW202303754A/zh unknown
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Patent Citations (5)
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JP2013069231A (ja) | 2011-09-26 | 2013-04-18 | Fanuc Ltd | 工具の軌跡表示機能を備えた数値制御装置 |
JP2018049936A (ja) | 2016-09-21 | 2018-03-29 | 株式会社日立製作所 | 探索装置および探索方法 |
JP2019040984A (ja) | 2017-08-24 | 2019-03-14 | 株式会社日立製作所 | 探索装置及び探索方法 |
JP2019159864A (ja) | 2018-03-14 | 2019-09-19 | 株式会社日立ハイテクノロジーズ | 探索装置、探索方法及びプラズマ処理装置 |
WO2021111511A1 (ja) | 2019-12-03 | 2021-06-10 | 株式会社日立ハイテク | 探索装置、探索プログラム及びプラズマ処理装置 |
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