JP7431358B2 - 液晶表示装置及び電子機器 - Google Patents
液晶表示装置及び電子機器 Download PDFInfo
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- JP7431358B2 JP7431358B2 JP2023019952A JP2023019952A JP7431358B2 JP 7431358 B2 JP7431358 B2 JP 7431358B2 JP 2023019952 A JP2023019952 A JP 2023019952A JP 2023019952 A JP2023019952 A JP 2023019952A JP 7431358 B2 JP7431358 B2 JP 7431358B2
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Description
本実施の形態では、本発明の一態様である液晶表示装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様である液晶表示装置について、実施の形態1で説明した構成とは動作の異なる構成について図面を参照して説明する。
本実施の形態では、実施の形態1で説明したOSトランジスタの詳細について説明する。
本実施の形態では、液晶表示装置の構成例について説明する。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図15(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810の断面図である。図15(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図16(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。電極744a及び電極744bは、絶縁層728及び絶縁層729に形成した開口部において半導体層742と電気的に接続する。
上記説明したボトムゲート型トランジスタおよびトップゲート型トランジスタは、積層して設けることができる。当該構成について、図17(A)、(B)を用いて説明する。
本実施の形態では、上記実施の形態で例示した液晶表示装置に適用可能な半導体装置について説明する。以下で例示する半導体装置は、記憶装置として機能することができる。
本発明の一態様に係る液晶表示装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置又は画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機等が挙げられる。これら電子機器の具体例を図19に示す。
Claims (4)
- 第1のメモリ回路と、第2のメモリ回路と、液晶素子と、を有する画素を有し、
前記第1のメモリ回路は、第1の容量素子を有し、
前記第1の容量素子の一方の電極は、前記液晶素子の一方の電極と電気的に接続され、
前記第2のメモリ回路は、第2の容量素子を有し、
前記第2の容量素子の一方の電極は、前記液晶素子の一方の電極と電気的に接続され、
前記第1のメモリ回路は、第1の信号に応じた電荷を保持する機能を有し、
前記第2のメモリ回路は、第2の信号に応じた電荷を保持する機能を有し、
前記第1の容量素子の他方の電極に第1の諧調数を有する第3の信号を与えること、および前記第2の容量素子の他方の電極に第2の諧調数を有する第4の信号を与えることで、前記液晶素子に前記第1の諧調数及び前記第2の諧調数以上の諧調数を有する画像信号に対応する画像を表示することができる、液晶表示装置。 - 請求項1において、
前記画素は、前記第1の信号または前記第2の信号を与える第1の配線と電気的に接続され、
前記画素は、参照電圧または前記第3の信号を与える第2の配線と電気的に接続され、
前記画素は、前記参照電圧または前記第4の信号を与える第3の配線と電気的に接続され、
前記第1のメモリ回路は、第1のトランジスタおよび第2のトランジスタをさらに有し、
前記第2のメモリ回路は、前記第2のトランジスタおよび第3のトランジスタをさらに有し、
前記第1のトランジスタは、前記第2の配線と前記第1の容量素子の他方の電極との導通状態を制御する機能を有し、
前記第2のトランジスタは、前記第1の配線と、前記第1の容量素子の一方の電極および前記第2の容量素子の一方の電極と、の導通状態を制御する機能を有し、
前記第3のトランジスタは、前記第3の配線と前記第2の容量素子の他方の電極との導通状態を制御する機能を有する、液晶表示装置。 - 請求項1または請求項2において、
前記画素は、第3の容量素子を有し、
前記第3の容量素子の一方の電極は、前記液晶素子の一方の電極と電気的に接続され、
前記第3の容量素子の他方の電極は、共通電位を与える機能を有する第4の配線と電気的に接続される、液晶表示装置。 - 請求項1乃至3のいずれか一項に記載の液晶表示装置と、カメラと、を有する電子機器。
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JP2019560503A JP7228530B2 (ja) | 2017-12-21 | 2018-12-10 | 液晶表示装置及び電子機器 |
PCT/IB2018/059809 WO2019123088A1 (ja) | 2017-12-21 | 2018-12-10 | 液晶表示装置、液晶表示装置の駆動方法、および電子機器 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002196306A (ja) | 2000-10-05 | 2002-07-12 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP2010266494A (ja) | 2009-05-12 | 2010-11-25 | Sony Corp | 表示装置、表示方法 |
US20130120469A1 (en) | 2011-11-11 | 2013-05-16 | Au Optronics Corporation | Pixel array |
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JPH0580354A (ja) | 1991-09-25 | 1993-04-02 | Kyocera Corp | 液晶表示装置 |
US7184014B2 (en) | 2000-10-05 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US20110279427A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
JP2012145655A (ja) | 2011-01-07 | 2012-08-02 | Canon Inc | 画像表示装置及びその制御方法 |
JP2017027012A (ja) * | 2015-07-24 | 2017-02-02 | 株式会社ジャパンディスプレイ | 表示装置 |
US10140940B2 (en) | 2015-07-24 | 2018-11-27 | Japan Display Inc. | Display device |
US10354574B2 (en) * | 2015-09-25 | 2019-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Driver IC and electronic device |
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