JP7429094B2 - Mounting board manufacturing method and mounting board - Google Patents

Mounting board manufacturing method and mounting board Download PDF

Info

Publication number
JP7429094B2
JP7429094B2 JP2018168574A JP2018168574A JP7429094B2 JP 7429094 B2 JP7429094 B2 JP 7429094B2 JP 2018168574 A JP2018168574 A JP 2018168574A JP 2018168574 A JP2018168574 A JP 2018168574A JP 7429094 B2 JP7429094 B2 JP 7429094B2
Authority
JP
Japan
Prior art keywords
led chip
guide layer
transfer
transfer target
coupling agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018168574A
Other languages
Japanese (ja)
Other versions
JP2020043188A (en
Inventor
清人 山本
義之 新井
義人 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Engineering Co Ltd
Original Assignee
Toray Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Engineering Co Ltd filed Critical Toray Engineering Co Ltd
Priority to JP2018168574A priority Critical patent/JP7429094B2/en
Priority to PCT/JP2019/034780 priority patent/WO2020054538A1/en
Priority to TW108132614A priority patent/TW202018976A/en
Publication of JP2020043188A publication Critical patent/JP2020043188A/en
Application granted granted Critical
Publication of JP7429094B2 publication Critical patent/JP7429094B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Description

本発明は、ＬＥＤチップを高精度に転写し実装する実装基板の製造方法に関するものである。 The present invention relates to a method for manufacturing a mounting board in which an LED chip is transferred and mounted with high precision.

ＬＥＤチップは、コスト低減のために小型化し、小型化したＬＥＤチップを高速・高精度に実装するための取組みが行われている。特に、ディスプレイに用いられるＬＥＤはマイクロＬＥＤと呼ばれる５０μｍ×５０μｍ以下のＬＥＤチップを数μｍの精度で高速に実装することが求められている。 LED chips have been miniaturized to reduce costs, and efforts are being made to mount the miniaturized LED chips at high speed and with high precision. In particular, for LEDs used in displays, it is required that LED chips called micro-LEDs, which are 50 μm×50 μm or less, be mounted at high speed with an accuracy of several μm.

特許文献１には、ウェハに格子状に形成されたＬＥＤチップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに一括して転写基板に転写したのち、転写基板に転写された後の複数のＬＥＤチップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに次の転写基板に一括して転写する構成が記載されている。 Patent Document 1 discloses that LED chips formed in a lattice pattern on a wafer are irradiated with band-shaped laser light and transferred to a transfer substrate in batches for each line or multiple lines. A configuration is described in which a plurality of LED chips are irradiated with a band-shaped laser beam to transfer one line or a plurality of lines all at once to the next transfer substrate.

特開２０１０－１６１２２１号公報Japanese Patent Application Publication No. 2010-161221

特許文献１のような方法でＬＥＤチップを各転写基板に転写するとき、転写される側の転写基板、すなわち被転写基板には、たとえば図１（Ａ）に示すようにＬＥＤチップと被転写基板とを連結する連結剤の層が設けられている。図１（Ａ）は被転写基板１００の断面図を示す。被転写基板１００の基板１０１の上面（Ｚ軸方向上側の面）には配線部１０２が設けられている。配線部１０２は図示しない電源や制御装置からの電気信号等を伝える働きをする。配線部１０２を含む基板１０１の上面に導電性物質を含む連結剤で構成された連結層１０３が設けられている。この連結剤は、たとえば積水化学工業株式会社のはんだ粒子入り異方導電性ペーストのように、加熱により連結剤中の導電性物質が金属間、すなわち、ＬＥＤチップ１０５のバンプ部１０６と配線部１０２との間で凝集し硬化する性質を有している。 When an LED chip is transferred to each transfer substrate by the method described in Patent Document 1, the transfer substrate on the side to be transferred, that is, the transfer substrate, has an LED chip and a transfer substrate as shown in FIG. 1(A), for example. A layer of linking agent is provided to connect the two. FIG. 1A shows a cross-sectional view of the transfer target substrate 100. A wiring section 102 is provided on the upper surface (upper surface in the Z-axis direction) of the substrate 101 of the transfer target substrate 100 . The wiring section 102 functions to transmit electrical signals from a power source and a control device (not shown). A coupling layer 103 made of a coupling agent containing a conductive substance is provided on the upper surface of the substrate 101 including the wiring portion 102. This coupling agent, for example, Sekisui Chemical Co., Ltd.'s anisotropically conductive paste containing solder particles, is heated so that the conductive substance in the coupling agent forms between the metals, that is, between the bump portion 106 of the LED chip 105 and the wiring portion 105. It has the property of agglomerating and hardening.

ＬＥＤチップ１０５の被転写基板１００への被転写基板１００への転写は、図１（Ｂ）に示すように、レーザーリフトオフ法によりＬＥＤチップ１０５を転写基板１０４から切り離し被転写基板１００の連結層１０３上に落下させることによって行われる。ＬＥＤチップ１０５が連結層１０３上に到着したのち、ＬＥＤチップ１０５が載った被転写基板１００を図示しない加熱機構により加熱処理することによって、ＬＥＤチップ１０５と被転写基板１００とを連結層１０３の連結剤に含まれる導電性物質を挟んで連結させる。このようにしてＬＥＤチップ１０５を被転写基板１００に実装させる。 To transfer the LED chip 105 to the transfer substrate 100, as shown in FIG. This is done by dropping it on top. After the LED chip 105 has arrived on the connection layer 103, the transfer substrate 100 on which the LED chip 105 is mounted is heat-treated by a heating mechanism (not shown), thereby connecting the LED chip 105 and the transfer substrate 100 to the connection layer 103. The conductive substance contained in the agent is sandwiched and connected. In this way, the LED chip 105 is mounted on the transfer target substrate 100.

ここで、被転写基板１００が加熱処理されるときに加熱により連結層１０３を構成する連結剤の流動性が上がり、ＬＥＤチップ１０５と接している連結層１０３の結合剤に液流れが生じる。この連結剤の液流れにより、たとえば図１（Ｃ）に示すように、加熱処理後に被転写基板１００上のＬＥＤチップ１０５の位置がずれてしまう可能性があった。ここで、図１（Ｃ）において正しい位置に転写されたＬＥＤチップ１０５の状態をＬＥＤチップ１０５ａに示す。また、転写後の連結剤の流動によりＬＥＤチップ１０５が横流れした位置に転写された状態を１０５ｂに示し、転写後の連結剤の流動により回転した位置に転写された状態をＬＥＤチップ１０５ｃに示し、転写後の連結剤の流動により傾いた位置に転写された状態をＬＥＤチップ１０５ｄに示す。 Here, when the transfer target substrate 100 is heat-treated, the fluidity of the coupling agent constituting the coupling layer 103 increases due to the heating, and a liquid flow occurs in the coupling agent of the coupling layer 103 that is in contact with the LED chip 105 . Due to this liquid flow of the coupling agent, there is a possibility that the position of the LED chip 105 on the transfer target substrate 100 may shift after the heat treatment, as shown in FIG. 1C, for example. Here, the state of the LED chip 105 transferred to the correct position in FIG. 1C is shown as the LED chip 105a. Further, 105b shows a state in which the LED chip 105 is transferred to a horizontally flowing position due to the flow of the coupling agent after transfer, and a state in which the LED chip 105 is transferred to a rotated position due to the flow of the coupling agent after transfer is shown in 105c. The LED chip 105d shows a state in which the image is transferred to an inclined position due to the flow of the coupling agent after transfer.

本発明は、上記課題を鑑み、転写後の被転写基板上での連結剤の流動に伴うＬＥＤチップの位置ずれを低減することを目的とする。 In view of the above problems, an object of the present invention is to reduce the positional shift of an LED chip due to the flow of a coupling agent on a transfer target substrate after transfer.

上記課題を解決するための本発明の実装基板の製造方法は、ＬＥＤチップを被転写基板に転写し実装する実装基板の製造方法において、前記被転写基板上の前記ＬＥＤチップの少なくとも一部が転写される領域である被転写領域が前記被転写領域の周囲の領域よりも窪んだ形状となるようにガイド層を前記被転写領域の周囲の領域に形成するガイド層形成工程と、前記被転写領域において前記ＬＥＤチップと前記被転写基板とを連結する連結剤を挿入する連結剤挿入工程と、前記ＬＥＤチップを前記被転写領域に転写する転写工程と、を有し、前記ＬＥＤチップはバンプ部を有し、前記バンプ部が前記被転写基板に転写される領域が前記被転写領域であり、所定方向における前記被転写領域の寸法は、当該所定方向における前記バンプ部の断面寸法に前記ＬＥＤチップの許容位置ずれ精度を加えた寸法であることを特徴とする。
 A method for manufacturing a mounting board according to the present invention for solving the above problems is a method for manufacturing a mounting board in which an LED chip is transferred and mounted on a transfer target board, in which at least a part of the LED chip on the transfer target board is transferred. a guide layer forming step of forming a guide layer in an area around the transfer area so that the transfer area, which is the area to be transferred, has a shape that is more concave than the area surrounding the transfer area, and the transfer area includes a coupling agent insertion step of inserting a coupling agent for coupling the LED chip and the transfer target substrate, and a transfer step of transferring the LED chip to the transfer target area , wherein the LED chip has a bump portion. The area where the bump part is transferred to the transfer target substrate is the transfer target area, and the dimension of the transfer target area in a predetermined direction is equal to the cross-sectional dimension of the bump part in the predetermined direction of the LED chip. It is characterized by the dimensions including the allowable positional deviation accuracy.

こうすることにより、転写後の連結剤の液流れに伴いＬＥＤチップの位置がずれようとしてもガイド層と被転写領域とで形成される窪みの壁面がガイドとなり、ＬＥＤチップの位置を規制できる。また、ガイド層の窪みの中で連結剤の流動が制限されるので、ガイド層を設けない場合に比べて転写時の連結剤の液流れを抑制でき転写時のＬＥＤチップの位置ずれを低減できる。 By doing so, even if the position of the LED chip tends to shift due to the flow of the coupling agent after transfer, the wall surface of the depression formed by the guide layer and the transfer area serves as a guide, and the position of the LED chip can be regulated. In addition, since the flow of the coupling agent is restricted within the recesses of the guide layer, the flow of the coupling agent during transfer can be suppressed compared to when no guide layer is provided, and the positional shift of the LED chip during transfer can be reduced. .

また、前記ガイド層形成工程は、前記連結剤に対して撥液性を有する材料を用いて前記ガイド層を形成してもよい。 Further, in the guide layer forming step, the guide layer may be formed using a material that is liquid repellent to the coupling agent.

連結剤に対して撥液性を有する材料を用いてガイド層を形成することにより印刷法等を用いて連結剤を必要な箇所に一括で充填できる。 By forming the guide layer using a material that is liquid-repellent to the coupling agent, the coupling agent can be filled in required locations all at once using a printing method or the like.

また、前記ガイド層形成工程は、前記被転写基板上に前記ガイド層を形成する材料を塗布するガイド層材料塗布工程と、前記被転写領域上の前記ガイド層を形成する材料を除去するガイド層材料除去工程と、を含んでもよい。 Further, the guide layer forming step includes a guide layer material application step of applying a material forming the guide layer on the transfer target substrate, and a guide layer material applying step of removing the material forming the guide layer on the transfer target area. and a material removal step.

こうすることで、ガイド層を形成する材料を被転写基板の被転写面にべた塗りしてから被転写領域上のガイド層をフォトリソ法やレーザアブレーション法等を用いて容易にガイド層を形成できる。 By doing this, the guide layer can be easily formed on the transfer target area by applying the material forming the guide layer all over the transfer target surface of the transfer target substrate using a photolithography method, laser ablation method, etc. .

また、前記連結剤挿入工程は、前記被転写領域に連結する部分に前記連結剤をあらかじめ付着させた前記ＬＥＤチップを転写することにより、前記転写工程と同時に行われてもよい。 Further, the connecting agent insertion step may be performed simultaneously with the transferring step by transferring the LED chip to which the connecting agent is attached in advance to a portion connected to the transferred region.

予めＬＥＤチップのバンプ先端に連結剤を付着させておくことで、連結剤の量を必要最小限にできる。 By attaching the coupling agent to the tip of the bump of the LED chip in advance, the amount of coupling agent can be minimized.

本発明の実装基板の製造方法または被転写基板を用いることにより、転写後の連結剤の流動に伴うＬＥＤチップの位置ずれを低減できる。 By using the mounting substrate manufacturing method or the transfer target substrate of the present invention, it is possible to reduce the positional shift of the LED chip due to the flow of the coupling agent after transfer.

ＬＥＤチップ転写後の連結剤の流動に伴う位置ずれを示す図である。FIG. 3 is a diagram illustrating positional shift due to flow of a coupling agent after LED chip transfer. 実施例１の実装基板の製造方法のフローを示す図である。2 is a diagram showing a flow of a method for manufacturing a mounting board according to Example 1. FIG. 実施例１の実装基板の製造方法を説明する図である。FIG. 3 is a diagram illustrating a method for manufacturing a mounting board of Example 1. 実施例１の実装基板の製造方法を説明する図である。FIG. 3 is a diagram illustrating a method for manufacturing a mounting board of Example 1. 実施例２の実装基板の製造方法を説明する図である。FIG. 7 is a diagram illustrating a method for manufacturing a mounting board according to a second embodiment. 実施例３の実装基板の製造方法のフローを示す図である。FIG. 7 is a diagram showing a flow of a method for manufacturing a mounting board according to Example 3; 実施例３の実装基板の製造方法を説明する図である。FIG. 7 is a diagram illustrating a method for manufacturing a mounting board according to Example 3. 実施例３の実装基板の製造方法を説明する図である。FIG. 7 is a diagram illustrating a method for manufacturing a mounting board according to Example 3.

本発明の実装基板の製造方法と被転写基板の実施例について図を用いて説明する。 Embodiments of a method for manufacturing a mounting board and a transfer substrate of the present invention will be described with reference to the drawings.

本発明の実施例１の実装基板の製造方法について図２、図３、図４を用いて説明する。図２は実施例１の実装基板の製造方法のフローであり、図３および図４は実施例１の実装基板の製造方法を説明する図である。実施例１の実装基板の製造方法図２に示すように、ガイド層形成工程（Ｓ１１）、連結剤挿入工程（Ｓ１２）、転写工程（Ｓ１３）、熱処理工程（Ｓ１４）の順序での実装基板を製造する方法である。また、本発明の実施例１の実装基板の製造方法に用いられるＬＥＤは、たとえばマイクロＬＥＤと呼ばれる５０μｍ×５０μｍ以下のＬＥＤチップである。 A method for manufacturing a mounting board according to Example 1 of the present invention will be explained using FIGS. 2, 3, and 4. FIG. 2 is a flowchart of a method for manufacturing a mounting board according to the first embodiment, and FIGS. 3 and 4 are diagrams for explaining the method for manufacturing a mounting board according to the first embodiment. Manufacturing method for mounting board of Example 1 As shown in FIG. 2, the mounting board is manufactured in the order of guide layer forming step (S11), coupling agent insertion step (S12), transfer step (S13), and heat treatment step (S14). This is a method of manufacturing. Further, the LED used in the method for manufacturing a mounting board according to the first embodiment of the present invention is, for example, an LED chip called a micro LED having a size of 50 μm×50 μm or less.

ガイド層形成工程（Ｓ１１）は、図３（Ａ）、（Ｂ）、（Ｃ）に示すように配線部１２が設けられた基板１１上にガイド層１５を設けた被転写基板１０を構成する工程である。ここで図３（Ａ）は配線部１２が設けられた基板１１の断面図を示す。基板１１において上面（Ｚ軸方向上側の面）に配線部１２が設けられている。配線部１２はＹ軸方向に長い複数の配線で構成されており、ＬＥＤチップ５が被転写基板１０上に実装される位置でのバンプ部６の配列に合わせたピッチでＸ軸方向に並べられており、配線部１２に連結したＬＥＤチップ５に図示しない電源や制御装置からの電気信号等を伝える働きをする。 In the guide layer forming step (S11), as shown in FIGS. 3A, 3B, and 3C, a transfer substrate 10 is formed in which a guide layer 15 is provided on a substrate 11 provided with wiring portions 12. It is a process. Here, FIG. 3(A) shows a cross-sectional view of the substrate 11 on which the wiring portion 12 is provided. A wiring section 12 is provided on the upper surface of the substrate 11 (the upper surface in the Z-axis direction). The wiring portion 12 is composed of a plurality of wires long in the Y-axis direction, and arranged in the X-axis direction at a pitch matching the arrangement of the bump portions 6 at the positions where the LED chips 5 are mounted on the transfer target substrate 10. The LED chip 5 connected to the wiring section 12 functions to transmit electrical signals from a power source or a control device (not shown).

本実施例では、ガイド層形成工程（Ｓ１１）は、配線部１２が設けられた基板１１の上面にガイド層を形成するガイド層材料１７を塗布するガイド層材料塗布工程（Ｓ１１ａ）とＬＥＤチップ５の少なくとも一部であるバンプ部６が転写される被転写基板１０上の領域である被転写領域１６にあるガイド層材料１７を除去するガイド層材料除去工程（Ｓ１１ｂ）とを有する。 In this embodiment, the guide layer forming step (S11) includes a guide layer material application step (S11a) of applying a guide layer material 17 for forming a guide layer on the upper surface of the substrate 11 provided with the wiring portion 12, and a guide layer material application step (S11a) of applying the guide layer material 17 to form the guide layer on the upper surface of the substrate 11 on which the wiring portion 12 is provided. The guide layer material removing step (S11b) includes removing the guide layer material 17 in the transfer target area 16, which is the area on the transfer target substrate 10 to which at least a part of the bump portion 6 is transferred.

最初にガイド層材料塗布工程（Ｓ１１ａ）では、配線部１２を含む基板１１の上面にガイド層形成材料１７を、たとえばダイコーティング法等を用いて図３（Ｂ）に示すような基板１１の上面を平坦な面で覆う形状になるようにべた塗りする。本実施例ではガイド層形成材料１７は非導電性と後述する連結剤３に対する撥液性との両方の性質を併せ持つ材料、たとえばＡＧＣ株式会社のサイトップのような材料を用いている。 First, in the guide layer material application step (S11a), the guide layer forming material 17 is applied to the upper surface of the substrate 11 including the wiring portion 12 using, for example, a die coating method, so that the upper surface of the substrate 11 as shown in FIG. 3(B) is coated. Apply a solid coat so that it covers the flat surface. In this embodiment, the guide layer forming material 17 is a material that is both non-conductive and liquid repellent to the coupling agent 3, which will be described later, such as Cytop manufactured by AGC Corporation.

続いてガイド層材料除去工程（Ｓ１１ｂ）では、ガイド層材料塗布工程（Ｓ１１ａ）で基板１１の上面に塗布されたガイド層形成材料１７のうち、ＬＥＤチップ５の少なくとも一部であるバンプ部６が転写される被転写基板１０上の領域である被転写領域１６上に塗布されたガイド層形成材料１７を、たとえば図３（Ｃ）に示すようにレーザーアブレーション法等を用いて除去しガイド層１５を形成する。 Subsequently, in the guide layer material removal step (S11b), the bump portion 6, which is at least a part of the LED chip 5, is removed from the guide layer forming material 17 applied to the upper surface of the substrate 11 in the guide layer material application step (S11a). The guide layer forming material 17 coated on the transfer target area 16, which is the area on the transfer target substrate 10 to be transferred, is removed using a laser ablation method or the like, as shown in FIG. 3(C), and the guide layer 15 is removed. form.

ここで被転写領域１６の大きさは、ＬＥＤチップ５の実装位置での許容位置ずれ精度を考慮した寸法であり、バンプ部６の水平方向（Ｘ軸方向およびＹ軸方向）の断面寸法よりＬＥＤチップ５の実装位置での許容位置ずれ精度分だけ大きい。また、ガイド層１５の高さ方向（Ｚ軸方向）の厚み寸法はバンプ部６の高さ方向（Ｚ軸方向）寸法と後述する熱処理工程（Ｓ１４）でバンプ部６と被転写領域１６との間で硬化する連結剤３の厚みと配線部１２の厚みとの和より小さい。また、被転写領域１６の大きさに対して配線部１２のＹ軸方向の幅は大きくても小さくてもよい。 Here, the size of the transferred area 16 is a dimension that takes into consideration the permissible positional deviation accuracy at the mounting position of the LED chip 5, and the size of the LED chip It is larger by the allowable positional deviation accuracy at the mounting position of the chip 5. Further, the thickness dimension of the guide layer 15 in the height direction (Z-axis direction) is the height direction (Z-axis direction) dimension of the bump part 6 and the thickness of the bump part 6 and the transfer area 16 in the heat treatment step (S14) described later. It is smaller than the sum of the thickness of the connecting agent 3 and the thickness of the wiring section 12, which hardens between them. Further, the width of the wiring portion 12 in the Y-axis direction may be larger or smaller than the size of the transfer target region 16.

このようにして、被転写基板１０上の被転写領域１６が、被転写領域１６の周囲の領域よりも窪んだ形状となるようなガイド層１５を被転写領域１６の周囲の領域に形成する。ここで本実施例の被転写領域１６の大きさは、チップ５の実装位置での許容位置ズレ精度を考慮したバンプ部６の水平方向の断面寸法であるので、一つのバンプ部６がガイド層１５と被転写領域１６で囲まれた一つの窪みに収める形態となる。 In this way, the guide layer 15 is formed in the area around the transfer area 16 so that the transfer area 16 on the transfer target substrate 10 has a shape that is more depressed than the area around the transfer area 16 . Here, the size of the transfer area 16 in this embodiment is the horizontal cross-sectional dimension of the bump portion 6 in consideration of the permissible positional deviation accuracy at the mounting position of the chip 5. 15 and the transfer target area 16 into one depression.

続いて 連結剤挿入工程（Ｓ１２）で、被転写領域１６にＬＥＤチップ５と被転写基板１０とを結合する導電性物質を含む連結剤３を挿入する。ここで連結剤３は、たとえば積水化学工業社のはんだ粒子入り異方導電性ペーストや金属ペースト等である。本実施例ではガイド層１５は連結剤３に対する撥液性を有する材料で構成されているので、たとえば図３（Ｄ）で示すようにスキージ１９を用いて容易に多くの被転写領域１６に一度で挿入することができる。連結剤３に対する撥液性を有する材料で構成されていないガイド層１５の場合は、たとえばディスペンサのようなもので連結剤３を被転写領域１６に挿入すればよい。このようにして、図４（Ａ）に示すような被転写基板１０を製造する。ここで被転写基板１０において、連結剤３が挿入された部分を連結部１３という。 Subsequently, in a coupling agent insertion step (S12), a coupling agent 3 containing a conductive substance for bonding the LED chip 5 and the transfer target substrate 10 is inserted into the transfer target region 16. Here, the coupling agent 3 is, for example, an anisotropic conductive paste containing solder particles or a metal paste manufactured by Sekisui Chemical Co., Ltd. In this embodiment, the guide layer 15 is made of a material that is liquid repellent to the coupling agent 3, so that it can be easily applied to many transfer areas 16 at once using a squeegee 19 as shown in FIG. 3(D). It can be inserted with . If the guide layer 15 is not made of a material that is liquid repellent to the coupling agent 3, the coupling agent 3 may be inserted into the transfer region 16 using, for example, a dispenser. In this way, a transfer substrate 10 as shown in FIG. 4(A) is manufactured. Here, in the transferred substrate 10, the portion into which the coupling agent 3 is inserted is referred to as a coupling portion 13.

続いて転写工程（Ｓ１３）で、図４（Ｂ）に示すようにレーザーリフトオフ法により転写基板４に一方の面を保持されたＬＥＤチップ５を転写基板４から切り離し、図４（Ｃ）に示すように被転写基板１０の被転写領域１６上、すなわち連結部１３上にＬＥＤチップ５を落下させ転写させる。 Subsequently, in the transfer step (S13), the LED chip 5 with one side held on the transfer substrate 4 is separated from the transfer substrate 4 by the laser lift-off method as shown in FIG. 4(B), and the LED chip 5 is separated from the transfer substrate 4 as shown in FIG. 4(C). The LED chip 5 is dropped onto the transfer target area 16 of the transfer target substrate 10, that is, onto the connecting portion 13, and is transferred.

続いて熱処理工程（Ｓ１４）で、図４（Ｄ）に示すようにＬＥＤチップ５が載った被転写基板１０を図示しない加熱機構により加熱し連結部１３の連結剤３を硬化させ、連結剤３中の導電性物質を介してバンプ部６と配線部１２とを連結させる。 Subsequently, in a heat treatment step (S14), as shown in FIG. 4(D), the transfer substrate 10 on which the LED chip 5 is mounted is heated by a heating mechanism (not shown) to harden the coupling agent 3 of the coupling portion 13. The bump portion 6 and the wiring portion 12 are connected through the conductive material therein.

ここで被転写基板上では、一つのＬＥＤチップ５に設けられた複数のバンプ部６がガイド層５と被転写領域１６とで囲まれた複数の窪みに嵌っている。被転写基板１０の加熱に伴い、連結部１３内では連結剤３が加熱されることにより一時的に連結剤３の流動性が上がり連結剤３の液流れが生じる。また、連結剤３の流動性が常温において高い場合でも同様に連結部１３内ではバンプ部６との接触により連結剤３の液流れが生じる可能性がある。連結剤３の液流れによりＬＥＤチップ５の位置がずれようとしてもガイド層１５と被転写領域１６とで形成される窪みの壁面がガイドとなり、ＬＥＤチップ５の位置が規制される。突出したバンプ部６がガイド層５と被転写領域１６とで囲まれた複数の窪みに嵌ることにより、転写後のＬＥＤチップ５の位置ずれが生じにくくなる。 Here, on the transfer target substrate, a plurality of bump portions 6 provided on one LED chip 5 fit into a plurality of depressions surrounded by the guide layer 5 and the transfer target area 16. As the transfer target substrate 10 is heated, the coupling agent 3 is heated in the coupling portion 13, so that the fluidity of the coupling agent 3 is temporarily increased and a liquid flow of the coupling agent 3 occurs. Further, even if the fluidity of the coupling agent 3 is high at room temperature, there is a possibility that liquid flow of the coupling agent 3 may occur within the coupling portion 13 due to contact with the bump portion 6. Even if the position of the LED chip 5 tends to shift due to the liquid flow of the coupling agent 3, the wall surface of the depression formed by the guide layer 15 and the transferred region 16 acts as a guide, and the position of the LED chip 5 is regulated. By fitting the protruding bump portions 6 into the plurality of depressions surrounded by the guide layer 5 and the transfer target area 16, the LED chip 5 is less likely to be misaligned after transfer.

また、ガイド層１５と被転写領域１６とで形成される窪みの中で連結剤３の流動が制限されるので、ガイド層１５を設けない場合に比べて加熱による連結部１３内の連結剤３の液流れを抑制でき、ＬＥＤチップ５の転写後の連結剤３の流動に伴うＬＥＤチップ５の位置ずれを低減できる。 Furthermore, since the flow of the coupling agent 3 is restricted in the recess formed by the guide layer 15 and the transferred region 16, the coupling agent 3 inside the coupling portion 13 due to heating is more restricted than when the guide layer 15 is not provided. The liquid flow can be suppressed, and the displacement of the LED chip 5 due to the flow of the coupling agent 3 after the transfer of the LED chip 5 can be reduced.

また、ガイド層１５を設けない被転写基板では、連結剤３に含まれる導電性物質が加熱によりバンプ部６と配線部１２との間で凝集する過程で凝集の仕方によっては、隣の配線部１２とバンプ部６が短絡するように凝集してしまう可能性もあるが、本実施例のようなガイド層１５を設けることにより連結剤３に含まれる導電性物質の凝集の仕方に起因する短絡を防ぐことができる。 In addition, in the transfer substrate without the guide layer 15, in the process of agglomerating the conductive substance contained in the coupling agent 3 between the bump portion 6 and the wiring portion 12 due to heating, depending on the manner of aggregation, the conductive substance contained in the coupling agent 3 may be attached to the adjacent wiring portion. 12 and the bump portion 6 may aggregate to cause a short circuit, but by providing the guide layer 15 as in this embodiment, short circuits caused by the manner in which the conductive substance contained in the coupling agent 3 aggregates can be prevented. can be prevented.

本発明の実施例２の実装基板の製造方法について図５にて説明する。実施例２は、連結剤挿入工程（Ｓ１２）において、実施例１の被転写領域１６上ではなく、ＬＥＤチップ５のバンプ部６に直接連結剤３をあらかじめ付着させてからＬＥＤチップ５の被転写領域２６への転写と同時にバンプ部６にあらかじめ付着させた連結剤３を被転写領域２６に挿入しＬＥＤチップ５の転写と同時に被転写領域１６上に挿入することが実施例１と異なる。 A method for manufacturing a mounting board according to Example 2 of the present invention will be explained with reference to FIG. In Example 2, in the coupling agent insertion step (S12), the coupling agent 3 is directly attached to the bump portion 6 of the LED chip 5 in advance, not on the transfer target area 16 of Example 1, and then the transfer target of the LED chip 5 is applied. This embodiment differs from the first embodiment in that the coupling agent 3 previously attached to the bump portion 6 is inserted into the transfer target area 26 at the same time as the transfer to the area 26, and is inserted onto the transfer target area 16 at the same time as the LED chip 5 is transferred.

図５（Ａ）は、転写基板４に一方の面を保持されたＬＥＤチップ５を被転写基板２０上の被転写領域２６に転写するために被転写基板２０と対向する位置にセットした状態を示す。ここで被転写基板２０は、配線部２２が設けられた基板２１の上面に実施例１で説明したガイド層形成工程（Ｓ１１）によりガイド層２５が設けられている。 FIG. 5(A) shows a state in which the LED chip 5, one side of which is held on the transfer substrate 4, is set at a position facing the transfer target substrate 20 in order to be transferred to the transfer target area 26 on the transfer target substrate 20. show. Here, in the transfer target substrate 20, a guide layer 25 is provided on the upper surface of the substrate 21 on which the wiring portion 22 is provided by the guide layer forming step (S11) described in the first embodiment.

ここで、ＬＥＤチップ５のバンプ部６には、連結剤挿入工程（Ｓ１２）により連結剤３があらかじめ付着されている。ここでのバンプ部６への連結剤３の付着方法は問われない。たとえばディップ法のような方法を用いて塗布されてもよいし、他の方法でもよい。 Here, the coupling agent 3 is attached to the bump portion 6 of the LED chip 5 in advance in the coupling agent insertion step (S12). Here, the method of attaching the coupling agent 3 to the bump portion 6 is not limited. For example, the coating may be applied using a method such as a dipping method, or other methods may be used.

続いて、転写工程（Ｓ１３）でレーザーリフトオフ法によりＬＥＤチップ５を転写基板４から切り離し被転写領域２６上に落下させ転写させる。図５（Ｂ）は、転写基板４からレーザーリフトオフ法によりＬＥＤチップ５が切り離され落下している状態を示す。また、図５（Ｃ）は、ＬＥＤチップ５が被転写領域２６上に落下し転写した状態を示す。 Subsequently, in a transfer step (S13), the LED chip 5 is separated from the transfer substrate 4 by a laser lift-off method and is dropped onto the transfer target area 26 for transfer. FIG. 5(B) shows a state in which the LED chip 5 is separated from the transfer substrate 4 by the laser lift-off method and is falling. Further, FIG. 5C shows a state in which the LED chip 5 has fallen onto the transfer target area 26 and has been transferred.

続いて、熱処理工程（Ｓ１４）で図示しない加熱機構により被転写基板２０を加熱する。ここでＬＥＤチップ５のバンプ部６に塗布された連結剤３の流動に伴いＬＥＤチップ５の位置がずれようとしてもガイド層２５と被転写領域２６とで形成される窪みの壁面がガイドとなり、ＬＥＤチップ５の位置が規制される。 Subsequently, in a heat treatment step (S14), the transfer target substrate 20 is heated by a heating mechanism (not shown). Here, even if the position of the LED chip 5 attempts to shift due to the flow of the coupling agent 3 applied to the bump portion 6 of the LED chip 5, the wall surface of the depression formed by the guide layer 25 and the transfer target area 26 acts as a guide. The position of the LED chip 5 is regulated.

こうすることでＬＥＤチップ５の転写後の被転写基板２０上での連結剤３の流動に伴うＬＥＤチップ５の位置ずれを低減することができる。 By doing so, it is possible to reduce the displacement of the LED chip 5 due to the flow of the coupling agent 3 on the transfer target substrate 20 after the LED chip 5 has been transferred.

また、連結剤挿入工程（Ｓ１２）が、前記被転写領域２６に連結する部分に連結剤３をあらかじめ付着させたＬＥＤチップ５を転写することにより、転写工程（Ｓ１３）と同時に行われることで、連結剤３の量を必要最小限にできる。 In addition, the coupling agent insertion step (S12) is performed simultaneously with the transfer step (S13) by transferring the LED chip 5 to which the coupling agent 3 is attached in advance to the portion connected to the transferred region 26, The amount of coupling agent 3 can be minimized.

ここで、連結剤３の量を必要最小限にすることで被転写基板２０とＬＥＤチップ５との密着性低下の懸念が考えられたとしても、図５（Ｄ）に示すように熱処理工程（Ｓ１４）でプレス機構２９を用いて加圧しながら図示しない加熱機構により熱処理することでバンプ部６と配線部１２との間にしっかりと連結剤３を行き渡らせることができ、被転写基板２０とＬＥＤチップ５との間で連結剤３を介した密着性を上げることができる。 Here, even if there is a concern that the adhesion between the transferred substrate 20 and the LED chip 5 may decrease by minimizing the amount of the coupling agent 3, as shown in FIG. 5(D), the heat treatment step ( In step S14), heat treatment is performed by a heating mechanism (not shown) while applying pressure using the press mechanism 29, so that the coupling agent 3 can be firmly spread between the bump portion 6 and the wiring portion 12, and the transfer substrate 20 and the LED Adhesion between the chip 5 and the chip 5 can be improved through the coupling agent 3.

本発明の実施例３の実装基板の製造方法について図６、図７、図８にて説明する。実施例３の実装基板の製造方法は、図６のフローに示すように実施例１の熱処理工程（Ｓ１４）の後に検査工程（Ｓ１５）とガイド層除去工程（Ｓ１６）と予備連結剤挿入工程（Ｓ１７）と予備ＬＥＤチップ転写工程（Ｓ１８）と予備ＬＥＤ熱処理工程（Ｓ１９）とを更に有していることが実施例１と異なる。図７（Ａ）は実施例１と同じ方法で製造された実装基板である被転写基板３０の平面図で図７（Ｂ）は図７（Ａ）のａ矢視図を、図７（Ｃ）は図７（Ａ）のｂ矢視図を示す。 A method for manufacturing a mounting board according to a third embodiment of the present invention will be explained with reference to FIGS. 6, 7, and 8. As shown in the flowchart of FIG. 6, the manufacturing method of the mounting board of Example 3 includes, after the heat treatment step (S14) of Example 1, an inspection step (S15), a guide layer removal step (S16), and a preliminary coupling agent insertion step ( This embodiment is different from Example 1 in that it further includes a preliminary LED chip transfer step (S17), a preliminary LED chip transfer step (S18), and a preliminary LED heat treatment step (S19). 7(A) is a plan view of a transfer substrate 30, which is a mounting board manufactured by the same method as in Example 1, and FIG. ) shows a view taken along arrow b in FIG. 7(A).

実施例３の実装基板の製造方法では、ガイド層形成工程（Ｓ１１）、連結剤挿入工程（Ｓ１２）、転写工程（Ｓ１３）、熱処理工程（Ｓ１４）は同じ工程である。 In the method for manufacturing a mounting board of Example 3, the guide layer forming step (S11), the coupling agent insertion step (S12), the transfer step (S13), and the heat treatment step (S14) are the same steps.

検査工程（Ｓ１５）で、図７（Ａ）に示すような実施例１と同じ方法で製造された実装基板である被転写基板３０を、たとえば点灯検査等により検査し、被転写基板３０に転写されたＬＥＤチップ５について良・不良を個別に判別する。 In the inspection step (S15), the transfer target substrate 30, which is a mounting board manufactured by the same method as in Example 1 as shown in FIG. The LED chips 5 are individually determined to be good or bad.

本実施例に用いられる被転写基板３０は、図７（Ａ）に示すように検査工程（Ｓ１５）で不良と判断されたＬＥＤチップ８の近傍に新たに予備ＬＥＤチップ９用の被転写領域である予備被転写領域３９を設けるスペースを有している。ここで予備被転写領域３９を設けるスペースは、図７（Ａ）に示すように転写されたそれぞれのＬＥＤチップ５の近傍のＬＥＤチップ５が転写されていない場所で、図７（Ｂ）、（Ｃ）に示すように対象のＬＥＤチップ５が連結している配線部３２が設けられている場所にあらかじめ予定されている。 As shown in FIG. 7A, the transfer substrate 30 used in this embodiment has a new transfer area for a preliminary LED chip 9 near the LED chip 8 determined to be defective in the inspection step (S15). It has a space in which a certain preliminary transfer area 39 is provided. Here, the space where the preliminary transfer area 39 is provided is a place where the LED chips 5 are not transferred near each of the transferred LED chips 5 as shown in FIG. 7(B), ( As shown in C), it is planned in advance at a location where a wiring section 32 to which the target LED chip 5 is connected is provided.

続いてガイド層除去工程（Ｓ１６）で、予備被転写領域３９上のガイド層３５を、図８（Ｂ）に示すようにたとえばレーザーアブレーション法等を用いて除去し、新たに予備被転写領域３９を設ける。 Subsequently, in a guide layer removal step (S16), the guide layer 35 on the preliminary transfer area 39 is removed using, for example, a laser ablation method as shown in FIG. 8(B), and a new preliminary transfer area 39 is removed. will be established.

続いて予備連結剤挿入工程（Ｓ１７）で、図８（Ｃ）で示すようにガイド層除去工程（Ｓ１６）でガイド層３５を除去した予備被転写領域３９とガイド層３５に囲まれた窪みに連結剤３を、たとえばディスペンサー３８を用いて挿入し連結部３３を形成する。 Subsequently, in the preliminary coupling agent insertion step (S17), as shown in FIG. The connecting agent 3 is inserted using, for example, a dispenser 38 to form the connecting portion 33.

続いて予備ＬＥＤ転写工程（Ｓ１８）で、図８（Ｄ）に示すように予備連結剤挿入工程（Ｓ１７）で連結剤３を挿入された予備被転写領域３９上に予備ＬＥＤチップ９をレーザーリフト法により転写する。 Subsequently, in a preliminary LED transfer step (S18), the preliminary LED chip 9 is laser-lifted onto the preliminary transfer target area 39 into which the coupling agent 3 has been inserted in the preliminary coupling agent insertion step (S17), as shown in FIG. 8(D). To be transcribed by law.

続いて予備ＬＥＤ熱処理工程（Ｓ１９）で被転写基板２０を図示しない加熱機構により加熱し、予備ＬＥＤチップ９が載った被転写基板１０を図示しない加熱機構により加熱し連結剤３を硬化し、連結剤３中の導電性物質を介して予備ＬＥＤチップ９のバンプ部６と配線部３２とを連結する。 Subsequently, in a preliminary LED heat treatment step (S19), the transfer target substrate 20 is heated by a heating mechanism (not shown), and the transfer target substrate 10 on which the preliminary LED chip 9 is mounted is heated by a heating mechanism (not shown) to harden the coupling agent 3 and connect it. The bump portion 6 of the preliminary LED chip 9 and the wiring portion 32 are connected through the conductive substance in the agent 3.

ここで、被転写基板１０の加熱に伴い、連結部３３内では連結剤３が加熱されることにより一時的に連結剤３の流動性が上がり連結剤３の液流れが生じる。連結剤３の液流れにより予備ＬＥＤチップ９の位置がずれようとしてもガイド層３５と被転写領域３６とで形成される窪みの壁面がガイドとなり、予備ＬＥＤチップ９の位置が規制される。また、ガイド層３５と被転写領域３６とで形成される窪みの中で連結剤３の流動が制限されるので、ガイド層除去工程（Ｓ１６ａ）で被転写領域３６よりも大きくガイド層３５を除去する場合に比べて加熱による連結部３３内の連結剤３の液流れを抑制でき、予備ＬＥＤチップ９の転写後の連結剤３の流動に伴う予備ＬＥＤチップ９の位置ずれを低減できる。 Here, as the transfer target substrate 10 is heated, the coupling agent 3 is heated in the coupling portion 33, so that the fluidity of the coupling agent 3 is temporarily increased and a liquid flow of the coupling agent 3 occurs. Even if the position of the preliminary LED chip 9 tends to shift due to the liquid flow of the coupling agent 3, the wall surface of the depression formed by the guide layer 35 and the transferred region 36 serves as a guide, and the position of the preliminary LED chip 9 is regulated. Furthermore, since the flow of the coupling agent 3 is restricted in the recess formed by the guide layer 35 and the transfer area 36, the guide layer 35 is removed larger than the transfer area 36 in the guide layer removal step (S16a). Compared to the case where the coupling agent 3 flows in the coupling portion 33 due to heating, it is possible to suppress the liquid flow of the coupling agent 3 within the coupling portion 33, and it is possible to reduce the displacement of the preliminary LED chip 9 due to the flow of the coupling agent 3 after the preliminary LED chip 9 has been transferred.

また、検査工程（Ｓ１５）で不良と判断されたＬＥＤチップ８を除去して同じ場所に予備ＬＥＤチップを実装するリペア方法では、検査工程（Ｓ１５）で不良と判断されたＬＥＤチップ８を完全に除去しきれない場合、同じ箇所に新たに予備ＬＥＤチップを実装しても不良となる可能性がある。上述のように実施例３の実装基板の製造方法では、検査工程（Ｓ１５）で不良と判断されたＬＥＤチップ８を除去せずに新たに予備ＬＥＤチップ９を実装するため、同じ箇所に新たな予備ＬＥＤチップ９を実装するよりもリペアした箇所が再び不良となる可能性が低減され確実なリペアができる。 Furthermore, in the repair method in which the LED chip 8 determined to be defective in the inspection process (S15) is removed and a spare LED chip is mounted in the same place, the LED chip 8 determined to be defective in the inspection process (S15) is completely removed. If it cannot be removed completely, even if a new spare LED chip is mounted in the same location, there is a possibility that it will be defective. As described above, in the mounting board manufacturing method of Example 3, a new spare LED chip 9 is mounted without removing the LED chip 8 determined to be defective in the inspection step (S15). Compared to mounting a spare LED chip 9, the possibility that the repaired part will become defective again is reduced, and reliable repair can be performed.

また、ガイド層３５が連結剤３を撥液する材料で形成されている場合は、撥液の効果で連結剤３がガイド層３５と予備被転写領域３９とで囲まれたくぼみに収まりやすいため、インクジェット法やディスペンサ等でスポットで確実に連結剤３を挿入できるので、連結剤３の材料利用率がよくなる。 In addition, if the guide layer 35 is made of a material that repels the coupling agent 3, the coupling agent 3 is likely to fit into the recess surrounded by the guide layer 35 and the preliminary transfer area 39 due to the liquid repellent effect. Since the coupling agent 3 can be reliably inserted in a spot using an inkjet method or a dispenser, the material utilization rate of the coupling agent 3 is improved.

また、特にサイズの小さいＬＥＤチップ、たとえばマイクロＬＥＤチップ等の実装基板では、ＬＥＤチップのサイズが小さく、またＬＥＤチップ間に新たなＬＥＤチップを実装するスペースがある場合が多く、検査で不良と判断されたＬＥＤチップを除去しないでリペアする本発明の実施例３のような実装基板の製造方法を用いることに適している。 In addition, especially for small-sized LED chips, such as micro LED chips, on mounting boards, the size of the LED chips is small and there is often space between the LED chips to mount a new LED chip, so it is determined to be defective during inspection. The present invention is suitable for use in a mounting board manufacturing method such as the third embodiment of the present invention, in which a damaged LED chip is repaired without removing it.

以上、本発明の実施例について説明したが、本発明はこれらに限定されるものではない。たとえば、本発明の実装基板の製造方法のガイド層形成にレーザーアブレーション法ではなく、フォトリソ法を用いて形成してもよいし、他の方法でもよい。 Although the embodiments of the present invention have been described above, the present invention is not limited thereto. For example, in the method for manufacturing a mounting board of the present invention, the guide layer may be formed using a photolithography method instead of the laser ablation method, or other methods may be used.

また、ガイド層は連結剤に対する撥液性を有していなくてもよい。その場合、連結剤挿入工程ではインクジェット法等によりピンポイントでガイド層と被転写領域で囲まれたくぼみに連結剤を塗布すればよい。 Furthermore, the guide layer does not need to have liquid repellency to the coupling agent. In this case, in the step of inserting the coupling agent, the coupling agent may be pinpointed into the depression surrounded by the guide layer and the transfer area using an inkjet method or the like.

また、ガイド層は被転写領域の周囲の領域に形成されていればよく、被転写領域以外の基板上全てに形成されていなくてもよい。たとえば、被転写基板上でストライプ形状に形成されたガイド層であってもよい。 Moreover, the guide layer only needs to be formed in the area around the transfer target area, and does not need to be formed on the entire substrate other than the transfer target area. For example, it may be a guide layer formed in a stripe shape on the transfer target substrate.

また、ガイド層材料は非導電性を有していなくてもよい。その場合、たとえば、おなじＬＥＤチップが連結する配線部が含まれる被転写領域の周囲に設けられるガイド層と、その配線部に連結しないＬＥＤチップが連結する別の配線部が含まれる別の被転写領域の周囲に設けられるが別のガイド層とは、接触していなければよい。 Furthermore, the guide layer material does not have to be non-conductive. In that case, for example, there is a guide layer provided around a transferred region that includes a wiring section to which the same LED chips are connected, and a guide layer provided around a transfer region that includes a wiring section that is connected to the same LED chip, and another transfer region that includes another wiring section that is connected to an LED chip that is not connected to the wiring section. It is sufficient that the guide layer is provided around the area but does not contact another guide layer.

また、実施例３の予備連結剤挿入工程は、あらかじめ予備ＬＥＤチップのバンプ部に連結剤を付着させておいてもよい。 Further, in the preliminary coupling agent insertion step of Example 3, the coupling agent may be attached to the bump portion of the preliminary LED chip in advance.

また、連結剤３は常温で流動性を有していてもよい。その場合、加熱しなくても常温で硬化するものであってもよい。 Furthermore, the coupling agent 3 may have fluidity at room temperature. In that case, it may be one that hardens at room temperature without heating.

また、ガイド層と被転写領域に囲まれた一つの窪みに、一つのＬＥＤチップに設けられた全てのバンプ部を収める実装基板であってもよい。 Alternatively, a mounting board may be used in which all bumps provided on one LED chip are accommodated in one depression surrounded by the guide layer and the transfer target area.

３ 連結剤
４ 転写基板
５ ＬＥＤチップ
６ バンプ部
８ 不良と判断されたＬＥＤチップ
９ 予備ＬＥＤチップ
１０，２０，３０ 被転写基板
１１，２１，３１ 基板
１２，２２，３２ 配線部
１３，２３，３３ 連結部
１５，２５，３５ ガイド層
１６，２６，３６ 被転写領域
１７ ガイド層形成材料
１９ スキージ
２０ 被転写基板
２９ プレス機構
３０ 被転写基板
３８ ディスペンサ
３９ 予備被転写領域
１００ 被転写基板
１０１ 基板
１０２ 配線部
１０３ 連結層
１０４ 転写基板
１０５ ＬＥＤチップ
１０６ バンプ部 3 Coupling agent 4 Transfer substrate 5 LED chip 6 Bump portion 8 LED chip determined to be defective 9 Spare LED chip 10, 20, 30 Transferred substrate 11, 21, 31 Substrate 12, 22, 32 Wiring portion 13, 23, 33 Connection portion 15, 25, 35 Guide layer 16, 26, 36 Transferred area 17 Guide layer forming material 19 Squeegee 20 Transferred substrate 29 Press mechanism 30 Transferred substrate 38 Dispenser 39 Preliminary transferred area 100 Transferred substrate 101 Substrate 102 Wiring Part 103 Connection layer 104 Transfer substrate 105 LED chip 106 Bump part

Claims (5)

ＬＥＤチップを被転写基板に転写し実装する実装基板の製造方法において、前記被転写基板上の前記ＬＥＤチップの少なくとも一部が転写される領域である被転写領域が前記被転写領域の周囲の領域よりも窪んだ形状となるようにガイド層を前記被転写領域の周囲の領域に形成するガイド層形成工程と、
前記被転写領域において前記ＬＥＤチップと前記被転写基板とを連結する連結剤を挿入する連結剤挿入工程と、
前記ＬＥＤチップを前記被転写領域に転写する転写工程と、
を有し、
前記ＬＥＤチップはバンプ部を有し、前記バンプ部が前記被転写基板に転写される領域が前記被転写領域であり、
所定方向における前記被転写領域の寸法は、当該所定方向における前記バンプ部の断面寸法に前記ＬＥＤチップの許容位置ずれ精度を加えた寸法であることを特徴とする、実装基板の製造方法。 In a method for manufacturing a mounting board in which an LED chip is transferred and mounted on a transfer target substrate, the transfer target area, which is an area where at least a part of the LED chip on the transfer target substrate is transferred, is an area surrounding the transfer target area. a guide layer forming step of forming a guide layer in a region around the transferred region so as to have a more concave shape;
a coupling agent insertion step of inserting a coupling agent to connect the LED chip and the transfer target substrate in the transfer target region;
a transfer step of transferring the LED chip to the transfer target area ;
has
The LED chip has a bump portion, and a region where the bump portion is transferred to the transfer target substrate is the transfer target region,
A method for manufacturing a mounting board, wherein the dimension of the transfer region in a predetermined direction is a dimension obtained by adding the allowable positional deviation accuracy of the LED chip to the cross-sectional dimension of the bump portion in the predetermined direction. 前記被転写領域には配線部が設けられており、前記ガイド層の厚み寸法は、前記バンプ部の高さ方向の寸法と硬化後の前記連結剤の厚み寸法と前記配線部の厚み寸法の和よりも小さいことを特徴とする、請求項１に記載の実装基板の製造方法。 A wiring portion is provided in the transfer area, and the thickness of the guide layer is the sum of the height dimension of the bump portion, the thickness of the connecting agent after curing, and the thickness of the wiring portion. 2. The method for manufacturing a mounting board according to claim 1, wherein the mounting board is smaller than the above. 前記ガイド層形成工程は、前記連結剤に対して撥液性を有する材料を用いて前記ガイド層を形成することを特徴とする、請求項１または２に記載の実装基板の製造方法。 3. The method of manufacturing a mounting board according to claim 1, wherein in the guide layer forming step, the guide layer is formed using a material that is liquid repellent to the coupling agent. 前記ガイド層形成工程は、
前記被転写基板上に前記ガイド層を形成する材料を塗布するガイド層材料塗布工程と、
前記被転写領域上の前記ガイド層を形成する材料を除去するガイド層材料除去工程と、
を含む、請求項１から３のいずれかに記載の実装基板の製造方法。 The guide layer forming step includes:
a guide layer material application step of applying a material forming the guide layer on the transfer target substrate;
a guide layer material removal step of removing a material forming the guide layer on the transfer target area;
The method for manufacturing a mounting board according to any one of claims 1 to 3, comprising: 前記連結剤挿入工程は、前記被転写領域に連結する部分に前記連結剤をあらかじめ付着させた前記ＬＥＤチップを転写することにより、前記転写工程と同時に行われることを特徴とする、請求項１から４のいずれかに記載の実装基板の製造方法。 2. The connecting agent inserting step is performed simultaneously with the transferring step by transferring the LED chip to which the connecting agent is attached in advance to a portion connected to the transferred region. 4. The method for manufacturing a mounting board according to any one of 4.
JP2018168574A 2018-09-10 2018-09-10 Mounting board manufacturing method and mounting board Active JP7429094B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018168574A JP7429094B2 (en) 2018-09-10 2018-09-10 Mounting board manufacturing method and mounting board
PCT/JP2019/034780 WO2020054538A1 (en) 2018-09-10 2019-09-04 Mounting substrate manufacturing method and mounting substrate
TW108132614A TW202018976A (en) 2018-09-10 2019-09-10 Mounting substrate manufacturing method and mounting substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018168574A JP7429094B2 (en) 2018-09-10 2018-09-10 Mounting board manufacturing method and mounting board

Publications (2)

Publication Number Publication Date
JP2020043188A JP2020043188A (en) 2020-03-19
JP7429094B2 true JP7429094B2 (en) 2024-02-07

Family

ID=69777641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018168574A Active JP7429094B2 (en) 2018-09-10 2018-09-10 Mounting board manufacturing method and mounting board

Country Status (3)

Country Link
JP (1) JP7429094B2 (en)
TW (1) TW202018976A (en)
WO (1) WO2020054538A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7463153B2 (en) * 2020-03-23 2024-04-08 東レエンジニアリング株式会社 Mounting method and mounting device
CN115335974A (en) * 2020-03-23 2022-11-11 东丽工程株式会社 Mounting method, mounting apparatus, and transfer apparatus
WO2022124178A1 (en) * 2020-12-11 2022-06-16 ソニーグループ株式会社 Light-emitting device and method for manufacturing light-emitting device
KR102559426B1 (en) * 2020-12-15 2023-07-26 한국전자기술연구원 Micro LED chip transfer method
CN112992878B (en) * 2021-02-05 2023-01-13 惠州市聚飞光电有限公司 Chip transfer method and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016503958A (en) 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション Light emitting element reflection bank structure
JP2016512347A (en) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション Light emitting diode display with redundancy scheme and method for manufacturing light emitting diode display with integrated defect detection inspection
JP2017135301A (en) 2016-01-29 2017-08-03 東芝ライテック株式会社 LED module and lighting device
JP2018508971A (en) 2014-12-19 2018-03-29 グロ アーベーＧｌｏ Ａｂ Method for generating a light emitting diode array on a backplane

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015038957A (en) * 2013-07-16 2015-02-26 株式会社東芝 Semiconductor device and manufacturing method of the same
US10297722B2 (en) * 2015-01-30 2019-05-21 Apple Inc. Micro-light emitting diode with metal side mirror
CN107251237B (en) * 2015-08-18 2019-12-13 歌尔股份有限公司 Repairing method, manufacturing method and device of micro light-emitting diode and electronic equipment
JP2018060993A (en) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 Transfer method, mounting method, transfer device, and mounting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016503958A (en) 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション Light emitting element reflection bank structure
JP2016512347A (en) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション Light emitting diode display with redundancy scheme and method for manufacturing light emitting diode display with integrated defect detection inspection
JP2018508971A (en) 2014-12-19 2018-03-29 グロ アーベーＧｌｏ Ａｂ Method for generating a light emitting diode array on a backplane
JP2017135301A (en) 2016-01-29 2017-08-03 東芝ライテック株式会社 LED module and lighting device

Also Published As

Publication number Publication date
WO2020054538A1 (en) 2020-03-19
TW202018976A (en) 2020-05-16
JP2020043188A (en) 2020-03-19

Similar Documents

Publication Publication Date Title
JP7429094B2 (en) Mounting board manufacturing method and mounting board
US10667387B2 (en) Accurate positioning and alignment of a component during processes such as reflow soldering
US6909194B2 (en) Electronic assembly having semiconductor component with polymer support member and method of fabrication
US6180504B1 (en) Method for fabricating a semiconductor component with external polymer support layer
US7410090B2 (en) Conductive bonding material fill techniques
KR100418059B1 (en) Bump Formation Method of Semiconductor Device
TWI364248B (en) Manufacturing method and manufacturing apparatus of printed wiring board
JP2000058709A (en) Structure and formation of lump electrode
US6029882A (en) Plastic solder array using injection molded solder
US7719853B2 (en) Electrically connecting terminal structure of circuit board and manufacturing method thereof
US6722275B2 (en) Reservoir stencil with relief areas and method of using
US20150250051A1 (en) Wiring substrate, method for manufacturing wiring substrate, and method for modifying surface of insulating layer
CN112703825A (en) Method for producing a circuit board assembly and circuit board assembly
JP2010177253A (en) Solder ball loading method
CN204481016U (en) Integrated circuit (IC) substrate package
US6708871B2 (en) Method for forming solder connections on a circuitized substrate
WO2010100706A1 (en) Semiconductor device
US7735717B2 (en) Method of manufacturing semiconductor apparatus and method of forming viscous liquid layer
JP4215685B2 (en) Method for manufacturing electronic circuit element
JP5772515B2 (en) Surface mounting component repair method and mask member used therefor
CN110858548A (en) Embedded chip and manufacturing method thereof
JP2010225851A (en) Substrate for controlling solder deposition
JP2008091557A (en) Electronic component mounting method and apparatus
JP2016021482A (en) Wiring board, semiconductor device using wiring board and manufacturing methods thereof
JPH11186455A (en) Method for forming protruding electrode

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220408

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221012

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20221012

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20221020

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20221021

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20221125

C211 Notice of termination of reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C211

Effective date: 20221129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230922

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240126

R150 Certificate of patent or registration of utility model

Ref document number: 7429094

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150