JP7427833B1 - 太陽電池及びその製造方法、太陽光発電モジュール - Google Patents
太陽電池及びその製造方法、太陽光発電モジュール Download PDFInfo
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052785 arsenic Inorganic materials 0.000 claims description 15
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- 239000000969 carrier Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
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- 238000009792 diffusion process Methods 0.000 description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- -1 polyethylene octene copolymer Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 230000007723 transport mechanism Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
対向して設けられた第1表面及び第2表面を有する半導体基板と、
前記半導体基板の第1表面に位置するエミッタ電極及び第1パッシベーション層と、
前記半導体基板の第2表面に位置するトンネル層と、
前記トンネル層の表面に位置する第1ドープ導電層及びブロック層と、
前記トンネル層の表面に位置する第2ドープ導電層と、
前記第2ドープ導電層の表面に位置する第2パッシベーション層と、
前記第2パッシベーション層を貫通して前記第2ドープ導電層とコンタクトを形成する第2電極、および、前記第1パッシベーション層を貫通して前記エミッタ電極とコンタクトを形成する第1電極と、を含み、
前記第1ドープ導電層は、前記トンネル層と前記ブロック層との間に位置し、前記第1ドープ導電層及び前記ブロック層は、メタライズ領域に対応し、
前記第2ドープ導電層は、非メタライズ領域の前記トンネル層及び前記ブロック層を覆い、前記第2ドープ導電層のドープ濃度は、前記第1ドープ導電層のドープ濃度よりも大きくなる。
対向して設けられた第1表面および第2表面を有する半導体基板を提供するステップと、
テクスチャリングされた前記半導体基板の第1表面にエミッタ電極を形成するステップと、
前記半導体基板の第2表面にトンネル層を形成するステップと、
前記トンネル層の表面に第1非導電層を形成し、前記第1非導電層は、メタライズ領域及び非メタライズ領域に対応するステップと、
前記第1非導電層の表面にブロック層を形成し、前記ブロック層は、メタライズ領域に対応するステップと、
前記第1非導電層及び前記ブロック層の表面に第2非導電層を形成し、前記第2非導電層に対してドープ処理を行うことで、前記第2非導電層及び非メタライズ領域に位置する前記第1非導電層を第2ドープ導電層に変換し、メタライズ領域に位置する前記第1非導電層を第1ドープ導電層に変換し、前記第2ドープ導電層のドープ濃度が前記第1ドープ導電層のドープ濃度よりも大きくなるステップと、
前記第2ドープ導電層の表面に第2パッシベーション層を形成し、前記エミッタ電極の表面に第1パッシベーション層を形成するステップと、
前記第2パッシベーション層の表面に第2電極を形成し、前記第1パッシベーション層の表面に第1電極を形成するステップと、を含む。
本願は、電池の第2表面のメタライズ領域のみに低濃度の第1ドープ導電層及びブロック層を設け、電池の第2表面全面に濃度の高い第2ドープ導電層を設けることにより、一方では、濃度の低い第1ドープ導電層がトンネル層とコンタクトして、トンネル層に対するドープ元素のパッシベーションの影響を低減し、メタライズ領域の再結合電流密度J0,metalを低減することができ、同時に濃度の低い第1ドープ導電層と半導体基板との間の擬フェルミ準位の差qVDが小さく、理論開回路電圧の向上に有利であり、太陽電池の光電変換効率の向上に有利であり、また、濃度の高い第2ドープ導電層がメタライズ領域及び非メタライズ領域に存在することにより、電池背面のキャリアの横方向輸送速度を確保することができ、さらに、非メタライズ領域にある第2ドープ導電層と半導体基板との間の距離が近いため、低濃度の第1ドープ導電層及びブロック層を設けることで第2ドープ導電層と半導体基板との間の距離が遠すぎることによって第2ドープ導電層のバンドベンディング効果が低下しすぎることを回避して、キャリアの選択輸送を確保することができる。
対向して設けられた第1表面および第2表面を有する半導体基板1と、
半導体基板1の第1表面に位置するエミッタ電極2及び第1パッシベーション層3と、
半導体基板1の第2表面に位置するトンネル層4と、
トンネル層4の表面に位置する第1ドープ導電層5及びブロック層6と、
トンネル層4の表面に位置する第2ドープ導電層7と、
第2ドープ導電層7の表面に位置する第2パッシベーション層8と、
エミッタ電極2とコンタクトする第1電極9及び第2ドープ導電層7とコンタクトする第2電極10と、を含み、
第1ドープ導電層5は、トンネル層4とブロック層6との間に位置し、第1ドープ導電層5及びブロック層6は、メタライズ領域に対応し、
第2ドープ導電層7は、非メタライズ領域のトンネル層4及びブロック層6を覆い、第2ドープ導電層7のドープ濃度は、第1ドープ導電層5のドープ濃度より大きくなる、
2-エミッタ電極
3-第1パッシベーション層
4-トンネル層
5-第1ドープ導電層
6-ブロック層
7-第2ドープ導電層
8-第2パッシベーション層
9-第1電極
10-第2電極
11-第1非導電層
12-第2非導電層
1000-太陽光発電モジュール
100-太陽電池
200-第1カバープレート
300-第1封止接着層
400-第2封止接着層
500-第2カバープレート
Claims (14)
- 太陽電池であって、
対向して設けられた第1表面および第2表面を有する半導体基板と、
前記半導体基板の第1表面に位置するエミッタ電極及び第1パッシベーション層と、
前記半導体基板の第2表面に位置するトンネル層と、
前記トンネル層の表面に位置する第1ドープ導電層及びブロック層と、
前記トンネル層の表面に位置する第2ドープ導電層と、
前記第2ドープ導電層の表面に位置する第2パッシベーション層と、
前記第2パッシベーション層を貫通して前記第2ドープ導電層とコンタクトを形成する第2電極、および、前記第1パッシベーション層を貫通して前記エミッタ電極とコンタクトを形成する第1電極と、を含み、
前記第1ドープ導電層は、前記トンネル層と前記ブロック層との間に位置し、前記第1ドープ導電層及び前記ブロック層は、メタライズ領域に対応し、
前記第2ドープ導電層は、非メタライズ領域の前記トンネル層及び前記ブロック層を覆い、前記ブロック層は、前記第2ドープ導電層におけるドープ元素の前記第1ドープ導電層への遷移をブロックするために用いられ、前記第2ドープ導電層のドープ濃度は、前記第1ドープ導電層のドープ濃度よりも大きい、ことを特徴とする太陽電池。 - 前記第1ドープ導電層の幅と前記ブロック層の幅との比は、1:(1~2)である、ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ドープ導電層とコンタクトする前記トンネル層の表面面積をS1とし、前記第1ドープ導電層とコンタクトする前記トンネル層の表面面積と前記第2ドープ導電層とコンタクトするトンネル層の表面面積との和をS2とすると、S1:S2=1:(5~50)である、ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ドープ導電層におけるドープ元素は、ホウ素、リン、ガリウム及びヒ素の少なくとも一つを含み、及び/又は、前記第1ドープ導電層のドープ濃度は、1E18cm-3~1.5E21cm-3である、ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ドープ導電層の厚さは、20nm~150nmである、ことを特徴とする請求項1に記載の太陽電池。
- 前記第2ドープ導電層におけるドープ元素は、ホウ素、リン、ガリウム及びヒ素のうちの少なくとも一つを含み、及び/又は、前記第2ドープ導電層のドープ濃度は、5E18cm-3~2E21cm-3である、ことを特徴とする請求項1に記載の太陽電池。
- 前記第2ドープ導電層の厚さは、20nm~200nmである、ことを特徴とする請求項1に記載の太陽電池。
- 前記ブロック層の材質は、シリコン酸化物、シリコン炭化物、シリコン窒化物及びマグネシウムフッ化物のうちの少なくとも一つを含み、及び/又は、前記ブロック層の厚さは、0.5nm~4nmである、ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ドープ導電層の厚さは、前記第2ドープ導電層の厚さよりも小さい、ことを特徴とする請求項1に記載の太陽電池。
- 前記非メタライズ領域に位置する第2ドープ導電層のドープ濃度は、前記メタライズ領域に位置する第2ドープ導電層のドープ濃度よりも大きい、ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ドープ導電層から前記トンネル層に向かう方向に沿って、前記第1ドープ導電層のドープ濃度が順次減少する、ことを特徴とする請求項1に記載の太陽電池。
- 前記トンネル層が位置する平面に平行する方向において、前記第2ドープ導電層に向かう前記第1ドープ導電層のドープ濃度は、前記第2ドープ導電層から離反する前記第1ドープ導電層のドープ濃度よりも大きい、ことを特徴とする請求項1に記載の太陽電池。
- 太陽電池の製造方法であって、
対向して設けられた第1表面および第2表面を有する半導体基板を提供するステップと、
テクスチャリングされた前記半導体基板の第1表面にエミッタ電極を形成するステップと、
前記半導体基板の第2表面にトンネル層を形成するステップと、
前記トンネル層の表面に第1非導電層を形成し、前記第1非導電層は、メタライズ領域及び非メタライズ領域に対応するステップと、
前記第1非導電層の表面にブロック層を形成し、前記ブロック層は、メタライズ領域に対応するステップと、
前記第1非導電層及び前記ブロック層の表面に第2非導電層を形成し、前記第2非導電層に対してドープ処理を行い、これによって前記第2非導電層及び非メタライズ領域に位置する前記第1非導電層を第2ドープ導電層に変換し、メタライズ領域に位置する前記第1非導電層を第1ドープ導電層に変換し、前記第2ドープ導電層のドープ濃度が前記第1ドープ導電層のドープ濃度よりも大きくなるステップと、
前記第2ドープ導電層の表面に第2パッシベーション層を形成し、前記エミッタ電極の表面に第1パッシベーション層を形成するステップと、
前記第2パッシベーション層の表面に第2電極を形成し、前記第1パッシベーション層の表面に第1電極を形成するステップと、を含み、
前記ブロック層は、前記第2ドープ導電層におけるドープ元素の前記第1ドープ導電層への遷移をブロックするために用いられる、ことを特徴とする太陽電池の製造方法。 - 太陽光発電モジュールであって、
カバープレートと、封止材層と、太陽電池ストリングとを含み、前記太陽電池ストリングは、請求項1~12のいずれか一項に記載の太陽電池を含む、ことを特徴とする太陽光発電モジュール。
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