JP7421935B2 - semiconductor equipment - Google Patents

semiconductor equipment Download PDF

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JP7421935B2
JP7421935B2 JP2020000207A JP2020000207A JP7421935B2 JP 7421935 B2 JP7421935 B2 JP 7421935B2 JP 2020000207 A JP2020000207 A JP 2020000207A JP 2020000207 A JP2020000207 A JP 2020000207A JP 7421935 B2 JP7421935 B2 JP 7421935B2
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electrode surface
wire member
semiconductor element
bonding material
conductor plate
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JP2021111633A (en
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誠仁 望月
円丈 露野
英一 井出
裕二朗 金子
徹 加藤
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Hitachi Astemo Ltd
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Hitachi Astemo Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Die Bonding (AREA)

Description

本発明は、半導体装置に関する。 The present invention relates to a semiconductor device.

チップ状の半導体素子の一方の電極面及び他方の電極面のそれぞれに、はんだ等の接合材を介して導体板を接合し、半導体素子の両面側から冷却する両面冷却構造を有する半導体装置が知られている（例えば、特許文献１）。 A semiconductor device is known which has a double-sided cooling structure in which a conductive plate is bonded to one electrode surface and the other electrode surface of a chip-shaped semiconductor element through a bonding material such as solder, and the semiconductor element is cooled from both sides. (For example, Patent Document 1).

特許文献１には、半導体素子と、はんだを介して半導体素子と接合されたヒートスプレッダと、半導体素子とヒートスプレッダとの間の寸法を規定する規定部と、ヒートスプレッダの半導体素子が接合される領域の外側に設けられ内部に溶融したはんだを収納する収納部と、内部に保持した溶融したはんだを収納部との間において流通させる保持部と、を備えた半導体装置が記載されている。 Patent Document 1 describes a semiconductor element, a heat spreader joined to the semiconductor element via solder, a defining part that defines dimensions between the semiconductor element and the heat spreader, and a region of the heat spreader outside the area where the semiconductor element is joined. A semiconductor device is described that includes a storage section that is provided in the storage section and stores molten solder therein, and a holding section that allows the molten solder held inside to flow between the storage section and the storage section.

特開２０１２－１９５５００号公報Japanese Patent Application Publication No. 2012-195500

両面冷却構造を有する半導体装置の組み立て工程においては、一方の電極面から他方の電極面へ向かう方向に荷重が加わった状態で、半導体素子の電極面と導体板とがはんだ接合される。それにより、半導体素子には、荷重が加わった方向に凸の反りが発生することがある。半導体素子に反りが発生すると、半導体素子にクラックが発生し易くなり、半導体装置の信頼性が低下する可能性がある。 In an assembly process of a semiconductor device having a double-sided cooling structure, an electrode surface of a semiconductor element and a conductor plate are soldered together with a load applied in a direction from one electrode surface to the other electrode surface. As a result, the semiconductor element may be warped in a convex manner in the direction in which the load is applied. When warpage occurs in a semiconductor element, cracks are likely to occur in the semiconductor element, which may reduce the reliability of the semiconductor device.

特許文献１に記載の半導体装置は、この半導体素子に発生し得る反りの問題について、何ら考慮されていない。また、特許文献１に記載の半導体装置は、半導体素子とヒートスプレッダとの間の寸法を規定する規定部が、球状に形成されたスペーサや、ヒートスプレッダから半導体素子へ延びる柱状に形成された突起部から構成される。このため、特許文献１に記載の半導体装置は、組み立て工程において、規定部がヒートスプレッダ上で転がったり、半導体素子が規定部上で滑ったりして、規定部及び半導体素子の位置決めが難しい。特許文献１に記載の半導体装置では、半導体素子とヒートスプレッダとの間において規定部を適切な位置に載置し、半導体素子の反りを抑制することが困難である。よって、特許文献１に記載の半導体装置には、装置の信頼性を向上させる点で、改善の余地がある。 The semiconductor device described in Patent Document 1 does not take into account the problem of warping that may occur in the semiconductor element. Further, in the semiconductor device described in Patent Document 1, the defining portion that defines the dimension between the semiconductor element and the heat spreader is formed from a spherical spacer or a columnar protrusion extending from the heat spreader to the semiconductor element. configured. For this reason, in the semiconductor device described in Patent Document 1, the defining part rolls on the heat spreader or the semiconductor element slips on the defining part during the assembly process, making it difficult to position the defining part and the semiconductor element. In the semiconductor device described in Patent Document 1, it is difficult to place the defining portion at an appropriate position between the semiconductor element and the heat spreader and to suppress warping of the semiconductor element. Therefore, the semiconductor device described in Patent Document 1 has room for improvement in terms of improving the reliability of the device.

本発明は、上記に鑑みてなされたものであり、半導体素子の反りを抑制して装置の信頼性を向上させることが可能な半導体装置を提供することを目的とする。 The present invention has been made in view of the above, and an object of the present invention is to provide a semiconductor device capable of suppressing warpage of a semiconductor element and improving reliability of the device.

上記課題を解決するために、本発明に係る半導体装置は、一方の面に形成された第１電極面と、前記一方の面と反対の他方の面に形成された第２電極面とを有する半導体素子と、前記第１電極面に第１接合材を介して接合される第１導体板と、前記第２電極面に第２接合材を介して接合される第２導体板と、前記第２電極面と前記第２導体板との間に設けられるワイヤ部材とを備え、前記ワイヤ部材は、湾曲していることを特徴とする。 In order to solve the above problems, a semiconductor device according to the present invention has a first electrode surface formed on one surface, and a second electrode surface formed on the other surface opposite to the one surface. a semiconductor element; a first conductor plate bonded to the first electrode surface via a first bonding material; a second conductor plate bonded to the second electrode surface via a second bonding material; A wire member is provided between the two electrode surfaces and the second conductor plate, and the wire member is curved.

本発明によれば、半導体素子の反りを抑制して装置の信頼性を向上させることが可能な半導体装置を提供することができる。
上記以外の課題、構成および効果は、以下の実施形態の説明により明らかにされる。 According to the present invention, it is possible to provide a semiconductor device that can suppress warpage of a semiconductor element and improve reliability of the device.
Problems, configurations, and effects other than those described above will be made clear by the description of the embodiments below.

本実施形態に係る半導体装置の外観を示す図。FIG. 1 is a diagram showing the appearance of a semiconductor device according to the present embodiment. 図１に示すＡ－Ａ線で半導体装置を切断した縦断面図。FIG. 2 is a longitudinal cross-sectional view of the semiconductor device taken along line AA shown in FIG. 1; 図３（ａ）は、図２に示す半導体素子の第１電極面を示す図、図３（ｂ）は、図２に示す半導体素子の第２電極面を示す図。3(a) is a diagram showing the first electrode surface of the semiconductor element shown in FIG. 2, and FIG. 3(b) is a diagram showing the second electrode surface of the semiconductor element shown in FIG. 2. 図２に示す半導体装置の要部Ｂの拡大図。3 is an enlarged view of a main part B of the semiconductor device shown in FIG. 2. FIG. 図４に示すＣ－Ｃ線で半導体装置を切断した横断面図。5 is a cross-sectional view of the semiconductor device taken along line CC shown in FIG. 4. FIG. 図５に示すＤ－Ｄ線で半導体装置を切断した縦断面図。6 is a vertical cross-sectional view of the semiconductor device taken along line DD shown in FIG. 5. FIG. ワイヤ部材の弾性力と接触点間距離との関係をワイヤ径の依存性を考慮してシミュレーションした結果を示す図。The figure which shows the result of simulating the relationship between the elastic force of a wire member and the distance between contact points, taking into consideration the dependence on the wire diameter. 半導体装置の組み立て工程に係る製造方法を示す図。FIG. 3 is a diagram showing a manufacturing method related to an assembly process of a semiconductor device. ワイヤ部材の変形例１を説明するための図。FIG. 7 is a diagram for explaining modification example 1 of the wire member. ワイヤ部材の変形例２を説明するための図。FIG. 6 is a diagram for explaining modification example 2 of the wire member. ワイヤ部材の変形例３を説明するための図。FIG. 7 is a diagram for explaining modification example 3 of the wire member.

以下、本発明の実施形態について図面を用いて説明する。なお、各実施形態において同一の符号を付された構成は、特に言及しない限り、各実施形態において同様の機能を有するため、その説明を省略する。また、必要な図面には、各部の位置の説明を明確にするために、ｘ軸、ｙ軸及びｚ軸から成る直交座標軸を記載している。 Embodiments of the present invention will be described below with reference to the drawings. In addition, unless otherwise mentioned, the components given the same reference numerals in each embodiment have the same functions in each embodiment, and therefore the description thereof will be omitted. Further, in the necessary drawings, orthogonal coordinate axes consisting of an x-axis, a y-axis, and a z-axis are shown in order to clearly explain the positions of each part.

本実施形態では、チップ状の半導体素子３２に直交する方向、すなわち、下記の第１電極面４４及び第２電極面４５に直交する方向を、「縦方向」とも称する。本実施形態では、チップ状の半導体素子３２に沿った方向、すなわち、第１電極面４４及び第２電極面４５に沿った方向を、「横方向」とも称する。縦方向は、図面に記載された直交座標軸のｚ軸方向に対応する。横方向は、図面に記載された直交座標軸のｘｙ平面に沿った方向に対応する。 In this embodiment, the direction perpendicular to the chip-shaped semiconductor element 32, that is, the direction perpendicular to the first electrode surface 44 and second electrode surface 45 described below, is also referred to as the "vertical direction." In this embodiment, the direction along the chip-shaped semiconductor element 32, that is, the direction along the first electrode surface 44 and the second electrode surface 45, is also referred to as the "lateral direction." The vertical direction corresponds to the z-axis direction of the orthogonal coordinate axes shown in the drawings. The lateral direction corresponds to the direction along the xy plane of the orthogonal coordinate axes shown in the drawings.

図１は、本実施形態に係る半導体装置１００の外観を示す図である。 FIG. 1 is a diagram showing the appearance of a semiconductor device 100 according to this embodiment.

半導体装置１００は、インバータ等の電力変換装置に適用されるパワー半導体モジュールである。半導体装置１００は、例えば、ハイブリッド自動車、電気自動車又は燃料電池車等の電動車両に搭載されるパワー半導体モジュールである。半導体装置１００は、液冷式の両面冷却構造を有する。 The semiconductor device 100 is a power semiconductor module applied to a power conversion device such as an inverter. The semiconductor device 100 is, for example, a power semiconductor module mounted on an electric vehicle such as a hybrid vehicle, an electric vehicle, or a fuel cell vehicle. The semiconductor device 100 has a liquid-cooled double-sided cooling structure.

半導体装置１００は、半導体素子３２等の各構成要素を、第１封止樹脂６及び第２封止樹脂７を用いて成形し、金属製のケース４０の内部に収容した構造を有する（図２を参照）。 The semiconductor device 100 has a structure in which each component such as a semiconductor element 32 is molded using a first sealing resin 6 and a second sealing resin 7 and housed inside a metal case 40 (FIG. 2 ).

ケース４０は、熱伝導性を有する材料を用いて形成される。ケース４０は、例えば、Ｃｕ、Ｃｕ合金、Ｃｕ－Ｃ、Ｃｕ－ＣｕＯ又はこれらの複合材、或いは、Ａｌ、Ａｌ合金、ＡｌＳｉＣ、Ａｌ－Ｃ又はこれらの複合材等を用いて形成される。 Case 40 is formed using a thermally conductive material. The case 40 is formed using, for example, Cu, Cu alloy, Cu-C, Cu-CuO, or a composite material thereof, or Al, Al alloy, AlSiC, Al-C, or a composite material thereof.

ケース４０は、例えば、扁平状の筒型形状を成す容器である。ケース４０は、一方の面に開口部が設けられ、一方の面に対向する他方の面に底部が設けられる。ケース４０の開口部には、直流正極端子５２、直流負極端子５３、交流出力端子５４及び制御端子５５が、外部へ向かって突出するように延びている。なお、図１では、開口部が一方の面のみに設けられたケース４０の例を示しているが、ケース４０は、開口部が他方の面にも設けられてよい。 The case 40 is, for example, a flat cylindrical container. The case 40 has an opening on one surface and a bottom on the other surface opposite to the one surface. A DC positive terminal 52, a DC negative terminal 53, an AC output terminal 54, and a control terminal 55 extend outward from the opening of the case 40. Although FIG. 1 shows an example of the case 40 in which the opening is provided on only one surface, the case 40 may also have an opening on the other surface.

ケース４０は、縦方向において互いに間隔を空けて対向する板状の一対の放熱部材４１と、一対の放熱部材４１を支持する枠体４３とを含む。 The case 40 includes a pair of plate-shaped heat radiating members 41 that face each other at intervals in the vertical direction, and a frame 43 that supports the pair of heat radiating members 41.

一対の放熱部材４１のそれぞれの外表面には、縦方向に延びる複数の放熱フィン４２が設けられる。一対の放熱部材４１のそれぞれは、例えば、摩擦攪拌接合、レーザ溶接、又は、ろう付け等の接合方法を用いて、枠体４３と接合されている。 A plurality of heat radiating fins 42 extending in the vertical direction are provided on the outer surface of each of the pair of heat radiating members 41. Each of the pair of heat dissipating members 41 is joined to the frame body 43 using a joining method such as friction stir welding, laser welding, or brazing.

上記の構成により、半導体装置１００は、水、油又は有機物等の液体の冷媒が流れる流路内に挿入されても、冷媒がケース４０の内部に進入することを防止できるため、液冷式の冷却構造を簡易な構成で実現することができる。なお、図２では、一対の放熱部材４１と枠体４３とが別体として形成された例を示しているが、一対の放熱部材４１と枠体４３とは同一の材料を用いて一体的に形成されてもよい。 With the above configuration, even if the semiconductor device 100 is inserted into a flow path through which a liquid refrigerant such as water, oil, or an organic substance flows, the refrigerant can be prevented from entering the inside of the case 40. The cooling structure can be realized with a simple configuration. Although FIG. 2 shows an example in which the pair of heat radiating members 41 and the frame body 43 are formed as separate bodies, the pair of heat radiating members 41 and the frame body 43 are formed integrally using the same material. may be formed.

図２は、図１に示すＡ－Ａ線で半導体装置１００を切断した縦断面図である。図３（ａ）は、図２に示す半導体素子３２の第１電極面４４を示す図である。図３（ｂ）は、図２に示す半導体素子３２の第２電極面４５を示す図である。 FIG. 2 is a vertical cross-sectional view of the semiconductor device 100 taken along the line AA shown in FIG. FIG. 3A is a diagram showing the first electrode surface 44 of the semiconductor element 32 shown in FIG. 2. FIG. FIG. 3(b) is a diagram showing the second electrode surface 45 of the semiconductor element 32 shown in FIG.

半導体装置１００は、半導体素子３２を備える。半導体素子３２は、ＩＧＢＴ（insulated gate bipolar transistor）、ＩＥＧＴ（injection enhanced gate transistor）又はＭＯＳＦＥＴ（metal-oxide-semiconductor field-effect transistor）等のトランジスタが形成された半導体素子、或いは、ダイオードが形成された半導体素子により構成される。半導体素子３２は、スイッチング素子として機能する。図２、図３（ａ）及び図３（ｂ）では、半導体素子３２の一例として、トランジスタが形成された半導体素子が示されている。 The semiconductor device 100 includes a semiconductor element 32. The semiconductor element 32 is a semiconductor element in which a transistor such as an IGBT (insulated gate bipolar transistor), an IEGT (injection enhanced gate transistor), or a MOSFET (metal-oxide-semiconductor field-effect transistor) is formed, or a diode is formed. It is composed of semiconductor elements. The semiconductor element 32 functions as a switching element. In FIGS. 2, 3(a), and 3(b), a semiconductor element in which a transistor is formed is shown as an example of the semiconductor element 32.

半導体素子３２は、図３（ａ）及び図３（ｂ）に示すように、矩形のチップ状を成す。半導体素子３２は、面積が広い２つの主面を有する。２つの主面のうちの他方の主面は、一方の主面と反対の面である。半導体素子３２の一方の主面には、図３（ａ）に示すように、第１電極面４４及び制御電極４７が形成される。半導体素子３２の他方の主面には、図３（ｂ）に示すように、第２電極面４５が全面に亘り形成される。第１電極面４４と第２電極面４５とは平行である。第２電極面４５の面積は、第１電極面４４の面積よりも大きい。 The semiconductor element 32 has a rectangular chip shape, as shown in FIGS. 3(a) and 3(b). The semiconductor element 32 has two main surfaces with large areas. The other of the two main surfaces is a surface opposite to one main surface. A first electrode surface 44 and a control electrode 47 are formed on one main surface of the semiconductor element 32, as shown in FIG. 3(a). A second electrode surface 45 is formed over the entire surface of the other main surface of the semiconductor element 32, as shown in FIG. 3(b). The first electrode surface 44 and the second electrode surface 45 are parallel. The area of the second electrode surface 45 is larger than the area of the first electrode surface 44.

半導体素子３２が、例えばＩＧＢＴ等のトランジスタが形成された半導体素子である場合、第１電極面４４はエミッタ電極に相当し、第２電極面４５はコレクタ電極に相当する。この場合、第１電極面４４、第２電極面４５及び制御電極４７は、例えば、Ｃｕ、Ａｌ、Ｎｉ又はこれらの合金等を用いて形成される。第１電極面４４、第２電極面４５及び制御電極４７の表面には、Ｎｉ、Ａｕ、Ａｇ、Ｓｎ、Ｐｄ又はこれらの合金等の鍍金が施されている。 When the semiconductor element 32 is a semiconductor element in which a transistor such as an IGBT is formed, the first electrode surface 44 corresponds to an emitter electrode, and the second electrode surface 45 corresponds to a collector electrode. In this case, the first electrode surface 44, the second electrode surface 45, and the control electrode 47 are formed using, for example, Cu, Al, Ni, or an alloy thereof. The surfaces of the first electrode surface 44, the second electrode surface 45, and the control electrode 47 are plated with Ni, Au, Ag, Sn, Pd, or an alloy thereof.

また、半導体装置１００は、図２に示すように、半導体素子３２の第１電極面４４に第１接合材３１を介して接合される第１導体板３０と、半導体素子３２の第２電極面４５に第２接合材３３を介して接合される第２導体板３４とを備える。 As shown in FIG. 2, the semiconductor device 100 also includes a first conductor plate 30 bonded to the first electrode surface 44 of the semiconductor element 32 via the first bonding material 31, and a second electrode surface of the semiconductor element 32. 45 and a second conductor plate 34 joined to the second conductor plate 34 via a second joining material 33.

第１接合材３１及び第２接合材３３は、導電性を有し金属を接合する接合材により構成される。第１接合材３１及び第２接合材３３は、例えば、Ｐｂフリーはんだや、微細金属粒子を含んだＡｇペースト等の低温焼結接合材により構成される。 The first bonding material 31 and the second bonding material 33 are made of a bonding material that has conductivity and bonds metals. The first bonding material 31 and the second bonding material 33 are made of, for example, a low-temperature sintering bonding material such as Pb-free solder or Ag paste containing fine metal particles.

第１導体板３０及び第２導体板３４のそれぞれは、導電性及び熱伝導性を有する材料を用いて形成される。第１導体板３０及び第２導体板３４のそれぞれは、例えば、Ｃｕ若しくはＣｕ合金、又は、Ａｌ若しくはＡｌ合金等を用いて形成される。なお、図２では、第１導体板３０及び第２導体板３４が単一の部材で形成された例を示しているが、第１導体板３０及び第２導体板３４は、複数の部材を接合して形成されていてもよい。 Each of the first conductive plate 30 and the second conductive plate 34 is formed using a material having electrical conductivity and thermal conductivity. Each of the first conductor plate 30 and the second conductor plate 34 is formed using, for example, Cu or a Cu alloy, Al or an Al alloy, or the like. Note that although FIG. 2 shows an example in which the first conductor plate 30 and the second conductor plate 34 are formed of a single member, the first conductor plate 30 and the second conductor plate 34 are formed of a plurality of members. They may be formed by joining.

第１導体板３０は、縦方向において第１電極面４４に対向して配置される。第２導体板３４は、縦方向において第２電極面４５に対向して配置される。第１導体板３０及び第２導体板３４は、縦方向から半導体素子３２を挟持する。半導体素子３２から発生した熱は、第１電極面４４及び第２電極面４５の両面側から、第１接合材３１及び第２接合材３３を介して、第１導体板３０及び第２導体板３４に伝達され、一対の放熱部材４１にそれぞれ伝達される。 The first conductor plate 30 is arranged to face the first electrode surface 44 in the vertical direction. The second conductor plate 34 is arranged to face the second electrode surface 45 in the vertical direction. The first conductor plate 30 and the second conductor plate 34 sandwich the semiconductor element 32 from the vertical direction. Heat generated from the semiconductor element 32 is transmitted from both sides of the first electrode surface 44 and the second electrode surface 45 to the first conductive plate 30 and the second conductive plate via the first bonding material 31 and the second bonding material 33. 34 and to the pair of heat radiating members 41, respectively.

第１導体板３０は、交流出力端子５４に接続される第１導体板３０ａと、直流負極端子５３に接続される第１導体板３０ｂとを含む。第１導体板３０ａ及び第１導体板３０ｂは、横方向において同一平面上に配置される。 The first conductor plate 30 includes a first conductor plate 30a connected to the AC output terminal 54 and a first conductor plate 30b connected to the DC negative terminal 53. The first conductor plate 30a and the first conductor plate 30b are arranged on the same plane in the lateral direction.

第２導体板３４は、直流正極端子５２に接続される第２導体板３４ａと、交流出力端子５４に接続される第２導体板３４ｂとを含む。第２導体板３４ａ及び第２導体板３４ｂは、横方向において同一平面上に配置される。第２導体板３４ｂは、リード部材等によって第１導体板３０ａに接続される。 The second conductor plate 34 includes a second conductor plate 34 a connected to the DC positive terminal 52 and a second conductor plate 34 b connected to the AC output terminal 54 . The second conductor plate 34a and the second conductor plate 34b are arranged on the same plane in the lateral direction. The second conductor plate 34b is connected to the first conductor plate 30a by a lead member or the like.

第１導体板３０及び第２導体板３４は、半導体素子３２を挟持した状態において、第１封止樹脂６によって封止されている。第１封止樹脂６は、例えば、エポキシ樹脂等であり、トランスファーモールド等の樹脂成型によって成形される。第１封止樹脂６は、第１導体板３０の放熱部材４１側の面３０ｃが、第１封止樹脂６から露出するように成形される。第１導体板３０の第１封止樹脂６から露出した面３０ｃは、熱伝導性を有する絶縁層５１を介して放熱部材４１に接続される。第１封止樹脂６は、第２導体板３４の放熱部材４１側の面３４ｃが、第１封止樹脂６から露出するように成形される。第２導体板３４の第１封止樹脂６から露出した面３４ｃは、熱伝導性を有する絶縁層５１を介して放熱部材４１に接続される。 The first conductor plate 30 and the second conductor plate 34 are sealed with the first sealing resin 6 while sandwiching the semiconductor element 32 therebetween. The first sealing resin 6 is, for example, an epoxy resin or the like, and is molded by resin molding such as transfer molding. The first sealing resin 6 is molded so that the surface 30c of the first conductor plate 30 on the heat dissipation member 41 side is exposed from the first sealing resin 6. The surface 30c of the first conductor plate 30 exposed from the first sealing resin 6 is connected to the heat radiating member 41 via the insulating layer 51 having thermal conductivity. The first sealing resin 6 is molded so that the surface 34c of the second conductor plate 34 on the heat dissipation member 41 side is exposed from the first sealing resin 6. The surface 34c of the second conductor plate 34 exposed from the first sealing resin 6 is connected to the heat radiating member 41 via the insulating layer 51 having thermal conductivity.

絶縁層５１は、半導体素子３２から発生した熱を放熱部材４１に伝達する部材であり、熱伝導率が高く、かつ、絶縁耐圧が大きい材料を用いて形成される。絶縁層５１は、例えば、Ａｌ２Ｏ３、ＡｌＮ若しくはＳｉ３Ｎ４等のセラミクス、又は、これらの微粉末を含有する絶縁シート若しくは接着材を用いて形成することができる。 The insulating layer 51 is a member that transmits heat generated from the semiconductor element 32 to the heat radiating member 41, and is formed using a material with high thermal conductivity and high dielectric strength. The insulating layer 51 can be formed using, for example, ceramics such as Al 2 O 3 , AlN, or Si 3 N 4 , or an insulating sheet or adhesive containing fine powder thereof.

第１封止樹脂６及び絶縁層５１と枠体４３との間には、第２封止樹脂７が充填されている。第２封止樹脂７は、第１封止樹脂６と同一の材料を用いて形成されてもよい。 A second sealing resin 7 is filled between the first sealing resin 6 and the insulating layer 51 and the frame 43 . The second sealing resin 7 may be formed using the same material as the first sealing resin 6.

図４は、図２に示す半導体装置１００の要部Ｂの拡大図である。 FIG. 4 is an enlarged view of a main part B of the semiconductor device 100 shown in FIG. 2. As shown in FIG.

半導体装置１００は、組み立て工程において、第１接合材３１又は第２接合材３３の濡れ性を向上させるスクラブ動作や、第１導体板３０の重さによって、半導体素子３２に対して、第１電極面４４から第２電極面４５へ向かう方向に荷重が加わる。それにより、半導体素子３２は、第１電極面４４から第２電極面４５へ向かう方向に撓んで、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが発生し易い。 During the assembly process, the semiconductor device 100 has a first electrode attached to the semiconductor element 32 by a scrubbing operation that improves the wettability of the first bonding material 31 or the second bonding material 33 and by the weight of the first conductive plate 30. A load is applied in the direction from the surface 44 toward the second electrode surface 45. As a result, the semiconductor element 32 is bent in the direction from the first electrode surface 44 to the second electrode surface 45, and a convex warpage is likely to occur in the direction from the first electrode surface 44 to the second electrode surface 45.

更に、第２電極面４５の面積は、第１電極面４４の面積よりも大きい。第２電極面４５に対する第２接合材３３の接合面３３ａの面積は、第１電極面４４に対する第１接合材３１の接合面３１ａの面積よりも大きくなる。このため、組み立て工程における第１接合材３１及び第２接合材３３の接合の際に、半導体素子３２には、第１電極面４４側と第２電極面４５側との間で熱収縮量に差が生じる。それにより、半導体素子３２は、第１電極面４４から第２電極面４５へ向かう方向に撓んで、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが発生し易い。 Furthermore, the area of the second electrode surface 45 is larger than the area of the first electrode surface 44. The area of the bonding surface 33a of the second bonding material 33 with respect to the second electrode surface 45 is larger than the area of the bonding surface 31a of the first bonding material 31 with respect to the first electrode surface 44. Therefore, when the first bonding material 31 and the second bonding material 33 are bonded in the assembly process, the semiconductor element 32 has an amount of thermal contraction between the first electrode surface 44 side and the second electrode surface 45 side. It makes a difference. As a result, the semiconductor element 32 is bent in the direction from the first electrode surface 44 to the second electrode surface 45, and a convex warpage is likely to occur in the direction from the first electrode surface 44 to the second electrode surface 45.

また、第１接合材３１の体積が第２接合材３３の体積より大きい場合、第１接合材３１の熱膨張量が第２接合材３３の熱膨張量よりも大きくなる。このため、半導体素子３２の駆動によって繰り返し発熱する際（パワーサイクルの際）に、第１接合材３１と第２接合材３３との熱膨張量の差に伴って、半導体素子３２には、第１電極面４４から第２電極面４５へ向かう方向に荷重が加わる。それにより、半導体素子３２は、第１電極面４４から第２電極面４５へ向かう方向に撓んで、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが発生し易い。 Further, when the volume of the first bonding material 31 is larger than the volume of the second bonding material 33, the amount of thermal expansion of the first bonding material 31 becomes larger than the amount of thermal expansion of the second bonding material 33. Therefore, when the semiconductor element 32 repeatedly generates heat by driving (during power cycling), due to the difference in thermal expansion between the first bonding material 31 and the second bonding material 33, the semiconductor element 32 has a A load is applied in the direction from the first electrode surface 44 to the second electrode surface 45. As a result, the semiconductor element 32 is bent in the direction from the first electrode surface 44 to the second electrode surface 45, and a convex warpage is likely to occur in the direction from the first electrode surface 44 to the second electrode surface 45.

半導体素子３２に反りが発生すると、駆動時の熱応力に伴って生じる歪が大きくなることから、半導体素子３２にクラックが発生し易くなる。それにより、半導体装置１００では、信頼性が低下する可能性がある。 When warpage occurs in the semiconductor element 32, the strain caused by thermal stress during driving increases, making it easier for cracks to occur in the semiconductor element 32. As a result, the reliability of the semiconductor device 100 may decrease.

そこで、本実施形態に係る半導体装置１００では、図４に示すように、半導体素子３２の第２電極面４５と第２導体板３４との間に、金属製のワイヤ部材２０が設けられる。ワイヤ部材２０は、上記のように半導体素子３２が第１電極面４４から第２電極面４５へ向かう方向に撓もうとしても、半導体素子３２の撓む挙動を規制することができる。このため、ワイヤ部材２０は、上記のような半導体素子３２の反りを抑制することができる。それにより、半導体装置１００では、半導体素子３２のクラックの発生を抑制することができるため、装置の信頼性を向上させることができる。 Therefore, in the semiconductor device 100 according to this embodiment, as shown in FIG. 4, a metal wire member 20 is provided between the second electrode surface 45 of the semiconductor element 32 and the second conductor plate 34. The wire member 20 can restrict the bending behavior of the semiconductor element 32 even if the semiconductor element 32 tries to bend in the direction from the first electrode surface 44 to the second electrode surface 45 as described above. Therefore, the wire member 20 can suppress the warping of the semiconductor element 32 as described above. As a result, in the semiconductor device 100, the occurrence of cracks in the semiconductor element 32 can be suppressed, so that the reliability of the device can be improved.

加えて、ワイヤ部材２０は、第２電極面４５と第２導体板３４との間の縦方向寸法を規定するスペーサとして機能し、第２接合材３３の厚さを適切な厚さに管理することができる。それにより、半導体装置１００では、第２接合材３３のクラックの発生を抑制することができるため、装置の信頼性を向上させることができる。 In addition, the wire member 20 functions as a spacer that defines the vertical dimension between the second electrode surface 45 and the second conductive plate 34, and controls the thickness of the second bonding material 33 to an appropriate thickness. be able to. As a result, in the semiconductor device 100, the occurrence of cracks in the second bonding material 33 can be suppressed, so that the reliability of the device can be improved.

ここで、第２電極面４５と第２導体板３４との間に広がる領域は、領域Ｍと領域Ｎとに分けることができる。領域Ｍは、第２電極面４５に直交する方向、すなわち、縦方向から視て、第１電極面４４に対する第１接合材３１の接合面３１ａと重複する領域である。領域Ｎは、領域Ｍの横方向に沿った外周を囲む領域である。領域Ｎは、縦方向から視て、領域Ｍから横方向に突出する領域である。 Here, the region extending between the second electrode surface 45 and the second conductive plate 34 can be divided into a region M and a region N. The region M is a region that overlaps with the bonding surface 31a of the first bonding material 31 to the first electrode surface 44 when viewed from the direction perpendicular to the second electrode surface 45, that is, from the vertical direction. Region N is a region surrounding the outer periphery of region M in the lateral direction. Region N is a region that protrudes from region M in the horizontal direction when viewed from the vertical direction.

ワイヤ部材２０は、第２電極面４５と第２導体板３４との間の領域のうち、少なくとも領域Ｍに設けられる。半導体素子３２では、第１電極面４４から第２電極面４５へ向かう方向に撓む場合、半導体素子３２の中央部、すなわち、第２電極面４５の中央部の撓み量が最大となり易い。すなわち、ワイヤ部材２０が領域Ｍに設けられていない場合には、半導体素子３２が第１電極面４４から第２電極面４５へ向かう方向に撓む挙動を規制することができない虞があり、半導体素子３２の反りを抑制することが難しくなる可能性がある。 The wire member 20 is provided in at least the region M of the region between the second electrode surface 45 and the second conductor plate 34 . When the semiconductor element 32 is bent in the direction from the first electrode surface 44 to the second electrode surface 45, the amount of bending at the center of the semiconductor element 32, that is, at the center of the second electrode surface 45, tends to be maximum. That is, if the wire member 20 is not provided in the region M, there is a possibility that the bending behavior of the semiconductor element 32 in the direction from the first electrode surface 44 to the second electrode surface 45 cannot be restricted, and the semiconductor It may become difficult to suppress warping of the element 32.

本実施形態に係るワイヤ部材２０は、領域Ｍに設けられることで、半導体素子３２が第１電極面４４から第２電極面４５へ向かう方向に撓む挙動を効果的に規制することができるため、半導体素子３２の反りを効果的に抑制することができる。それにより、半導体装置１００では、半導体素子３２のクラックの発生を効果的に抑制することができるため、装置の信頼性を更に向上させることができる。なお、ワイヤ部材２０は、少なくとも領域Ｍに設けられていればよく、領域Ｍのみに設けられてもよいし、領域Ｍと領域Ｎとに跨って設けられてもよい。 By being provided in the region M, the wire member 20 according to the present embodiment can effectively restrict the behavior in which the semiconductor element 32 bends in the direction from the first electrode surface 44 to the second electrode surface 45. , warping of the semiconductor element 32 can be effectively suppressed. As a result, in the semiconductor device 100, the occurrence of cracks in the semiconductor element 32 can be effectively suppressed, so that the reliability of the device can be further improved. Note that the wire member 20 may be provided at least in the region M, and may be provided only in the region M, or may be provided across the region M and the region N.

また、ワイヤ部材２０は、第２接合材３３の内部に埋設される。ワイヤ部材２０は、ワイヤ部材２０を形成する金属と第２接合材３３に含まれる金属とが合金層を形成する場合、第２接合材３３と強固に接合し、第２接合材３３が剥離し難くなる。第２接合材３３がワイヤ部材２０から剥離すると、剥離した部分が起点となって、クラックが発生し易い。よって、ワイヤ部材２０の材料は、第２接合材３３に含まれる金属と一緒に合金層を形成する材料である場合、第２接合材３３が剥離し難くなるため好適である。この場合、半導体装置１００は、第２接合材３３のクラックの発生を抑制することができるため、装置の信頼性を確保することができる。 Further, the wire member 20 is embedded inside the second bonding material 33. When the metal forming the wire member 20 and the metal contained in the second bonding material 33 form an alloy layer, the wire member 20 is firmly bonded to the second bonding material 33 and the second bonding material 33 does not peel off. It becomes difficult. When the second bonding material 33 is peeled off from the wire member 20, cracks are likely to occur starting from the peeled portion. Therefore, it is preferable that the material of the wire member 20 is a material that forms an alloy layer together with the metal contained in the second bonding material 33 because the second bonding material 33 will be difficult to peel off. In this case, since the semiconductor device 100 can suppress the occurrence of cracks in the second bonding material 33, the reliability of the device can be ensured.

ワイヤ部材２０は、第２接合材３３の濡れ性が低い場合、第２接合材３３と濡れていない部分が多く形成される。ワイヤ部材２０の第２接合材３３と濡れていない部分には、空隙が形成される。この空隙は、ワイヤ部材２０と第２接合材３３とが接合すると、第２接合材３３のボイドになり易い。よって、ワイヤ部材２０の材料は、第２接合材３３の濡れ性が高い材料である場合、第２接合材３３にボイドが発生し難くなるため好適である。この場合、半導体装置１００は、第２接合材３３のボイドの発生を抑制することができるため、第２接合材３３の熱抵抗上昇及びクラックの発生を抑制することができ、装置の信頼性を確保することができる。 When the second bonding material 33 has low wettability, the wire member 20 has many portions that are not wet with the second bonding material 33 . A gap is formed in a portion of the wire member 20 that is not wetted with the second bonding material 33 . This gap tends to become a void in the second bonding material 33 when the wire member 20 and the second bonding material 33 are bonded. Therefore, when the wire member 20 is made of a material that has high wettability with the second bonding material 33, it is preferable because voids are less likely to occur in the second bonding material 33. In this case, since the semiconductor device 100 can suppress the generation of voids in the second bonding material 33, it is possible to suppress the rise in thermal resistance and the generation of cracks in the second bonding material 33, thereby improving the reliability of the device. can be secured.

ワイヤ部材２０は、半導体素子３２の第２電極面４５と第２導体板３４とに接触する。ワイヤ部材２０は、第２電極面４５よりも柔らかいと好適である。第２電極面４５よりも柔らかいとは、ビッカース硬さやブリネル硬さ等の各種の硬さを示す指標が、第２電極面４５よりも小さいことを示すという意味である。すなわち、ワイヤ部材２０は、第２電極面４５よりも小さい硬さを有すると好適である。ワイヤ部材２０が第２電極面４５よりも柔らかいことにより、ワイヤ部材２０は、第２電極面４５と接触しても、第２電極面４５を傷付けて半導体素子３２を損傷させることを抑制することができる。半導体装置１００は、ワイヤ部材２０が設けられても、半導体素子３２の損傷を抑制することができ、装置の信頼性を確保することができる。なお、第２電極面４５よりも柔らかいとは、ワイヤ部材２０の材料のヤング率が、第２電極面４５の材料のヤング率よりも小さいことを示すという意味であってもよい。 The wire member 20 contacts the second electrode surface 45 of the semiconductor element 32 and the second conductive plate 34 . The wire member 20 is preferably softer than the second electrode surface 45. The phrase "softer than the second electrode surface 45" means that various hardness indicators such as Vickers hardness and Brinell hardness are smaller than the second electrode surface 45. That is, it is preferable that the wire member 20 has a hardness smaller than that of the second electrode surface 45. Since the wire member 20 is softer than the second electrode surface 45, even if the wire member 20 comes into contact with the second electrode surface 45, the wire member 20 can be prevented from damaging the second electrode surface 45 and damaging the semiconductor element 32. Can be done. In the semiconductor device 100, even if the wire member 20 is provided, damage to the semiconductor element 32 can be suppressed, and reliability of the device can be ensured. Note that "softer than the second electrode surface 45" may mean that the Young's modulus of the material of the wire member 20 is smaller than the Young's modulus of the material of the second electrode surface 45.

第２接合材３３と一緒に合金層を形成する点、第２接合材３３の濡れ性が高い点、及び、第２電極面４５よりも柔らかい点を鑑みると、ワイヤ部材２０の材料は、例えば、Ｃｕ及びＣｕの合金が好適である。但し、ワイヤ部材２０の材料は、必ずしもＣｕ及びＣｕの合金に限定されるものではない。ワイヤ部材２０の材料は、第２接合材３３の融点より高い融点を有し、高温に曝されても剛性が低下せず、半導体素子３２の反りを抑制することが可能な材料であればよい。 Considering that an alloy layer is formed together with the second bonding material 33, that the second bonding material 33 has high wettability, and that it is softer than the second electrode surface 45, the material of the wire member 20 is, for example, , Cu and alloys of Cu are preferred. However, the material of the wire member 20 is not necessarily limited to Cu and an alloy of Cu. The material for the wire member 20 may be any material that has a melting point higher than the melting point of the second bonding material 33, does not reduce its rigidity even when exposed to high temperatures, and is capable of suppressing warping of the semiconductor element 32. .

なお、半導体装置１００において、第１接合材３１の接合面３１ａの面積は、接合面３１ｂの面積よりも大きい。第２接合材３３の接合面３３ａの面積は、第２接合材３３の接合面３３ｂの面積よりも大きい。それにより、第１接合材３１及び第２接合材３３のそれぞれには、フィレットが形成されるため、第１接合材３１及び第２接合材３３の剪断応力を低減することができ、クラックの発生を抑制することができる。 Note that in the semiconductor device 100, the area of the bonding surface 31a of the first bonding material 31 is larger than the area of the bonding surface 31b. The area of the bonding surface 33a of the second bonding material 33 is larger than the area of the bonding surface 33b of the second bonding material 33. As a result, a fillet is formed in each of the first bonding material 31 and the second bonding material 33, so that the shear stress of the first bonding material 31 and the second bonding material 33 can be reduced, thereby preventing the occurrence of cracks. can be suppressed.

図５は、図４に示すＣ－Ｃ線で半導体装置１００を切断した横断面図である。図６は、図５に示すＤ－Ｄ線で半導体装置１００を切断した縦断面図である。なお、図５及び図６では、ワイヤ部材２０のハッチングの図示が省略されていると共に、第１封止樹脂６の図示が省略されている。 FIG. 5 is a cross-sectional view of the semiconductor device 100 taken along line CC shown in FIG. FIG. 6 is a vertical cross-sectional view of the semiconductor device 100 taken along the line DD shown in FIG. In addition, in FIGS. 5 and 6, illustration of the hatching of the wire member 20 is omitted, and illustration of the first sealing resin 6 is also omitted.

半導体装置１００では、ワイヤ部材２０が直線状を成す場合、組み立て工程において、ワイヤ部材２０が第２導体板３４上で転がったり、半導体素子３２がワイヤ部材２０上で滑ったりし易く、ワイヤ部材２０及び半導体素子３２の位置決めが難しい。このことは、半導体装置１００では、組み立て工程の作業性が低下するばかりでなく、半導体素子３２及びワイヤ部材２０が適切に位置決めされないことによって、半導体素子３２の反りを抑制し難くなったり、半導体素子３２の姿勢が不安定になったりする問題を生じ得る。それにより、半導体装置１００では、装置の信頼性が低下する可能性がある。 In the semiconductor device 100, when the wire member 20 is linear, the wire member 20 tends to roll on the second conductor plate 34 or the semiconductor element 32 easily slips on the wire member 20 during the assembly process. And positioning of the semiconductor element 32 is difficult. In the semiconductor device 100, this not only reduces the workability of the assembly process, but also makes it difficult to suppress the warpage of the semiconductor element 32 due to improper positioning of the semiconductor element 32 and the wire member 20, and 32 may become unstable. As a result, the reliability of the semiconductor device 100 may decrease.

そこで、本実施形態に係る半導体装置１００では、図５に示すように、ワイヤ部材２０が湾曲した形状を成すように形成される。ワイヤ部材２０は、縦方向又は横方向から視て、少なくとも１つの湾曲部を有する。すなわち、ワイヤ部材２０は、第２電極面４５に沿った方向、又は、第２電極面４５と交差する方向から視て、少なくとも１つの湾曲部を有する。 Therefore, in the semiconductor device 100 according to this embodiment, the wire member 20 is formed to have a curved shape, as shown in FIG. The wire member 20 has at least one curved portion when viewed from the vertical or horizontal direction. That is, the wire member 20 has at least one curved portion when viewed from a direction along the second electrode surface 45 or a direction intersecting the second electrode surface 45.

ワイヤ部材２０は、同一の部位において第２電極面４５に沿った方向及び第２電極面４５と交差する方向のそれぞれに湾曲する場合がある。本実施形態では、第２電極面４５に沿った方向（横方向）に主に湾曲する湾曲部を、「第１湾曲部２３」とも称する。本実施形態では、第２電極面４５に交差する方向（縦方向）に主に湾曲する湾曲部を、「第２湾曲部２４，２５」とも称する。第２湾曲部２４，２５は、第２電極面４５に交差する方向（縦方向）のうち、第１電極面４４から第２電極面４５へ向かう方向に湾曲する第２湾曲部２４と、第２電極面４５から第１電極面４４へ向かう方向に湾曲する第２湾曲部２５とを含む。 The wire member 20 may curve in the direction along the second electrode surface 45 and the direction intersecting the second electrode surface 45 at the same location. In this embodiment, the curved portion that curves mainly in the direction (lateral direction) along the second electrode surface 45 is also referred to as the “first curved portion 23”. In this embodiment, the curved portions that are mainly curved in the direction (vertical direction) intersecting the second electrode surface 45 are also referred to as “second curved portions 24, 25”. The second curved portions 24 and 25 include a second curved portion 24 that curves in a direction from the first electrode surface 44 to a second electrode surface 45 in a direction (vertical direction) intersecting the second electrode surface 45; The second curved portion 25 is curved in a direction from the second electrode surface 45 toward the first electrode surface 44 .

図５では、縦方向から視てワイヤ部材２０が「Ｚ字」状を成すように形成された例を示しており、ワイヤ部材２０が２つの第１湾曲部２３を有する例を示している。図５の第１湾曲部２３は、ワイヤ部材２０の中間部２２と一方の端部２１との間に形成されると共に、ワイヤ部材２０の中間部２２と他方の端部２１との間に形成される。第１湾曲部２３が形成される位置は、特に限定されない。但し、第１湾曲部２３は、両端部２１の間において偏在しないように形成されると好適である。 FIG. 5 shows an example in which the wire member 20 is formed in a “Z-shape” when viewed from the vertical direction, and shows an example in which the wire member 20 has two first curved portions 23. As shown in FIG. The first curved portion 23 in FIG. 5 is formed between the intermediate portion 22 and one end 21 of the wire member 20, and is also formed between the intermediate portion 22 and the other end 21 of the wire member 20. be done. The position where the first curved portion 23 is formed is not particularly limited. However, it is preferable that the first curved portion 23 be formed so as not to be unevenly distributed between both ends 21 .

ワイヤ部材２０は、２つの第１湾曲部２３の間に延びる部分と、第１湾曲部２３から端部２１まで延びる部分とを有する。また、ワイヤ部材２０は、重心位置２６が中間部２２付近に存在する。このため、ワイヤ部材２０は、例えば、重心位置２６を通り横方向に沿った軸の周りに回転させようとしても、第１湾曲部２３から端部２１まで延びる部分が第２導体板３４に接触するため、ワイヤ部材２０の転がりを抑制することができる。これは、重心位置２６を通り横方向に沿った軸から離隔した位置に、第２導体板３４に対するワイヤ部材２０の接触点２４ａが存在し得るためである（図６を参照）。更に、ワイヤ部材２０は、例えば、重心位置２６を通り縦方向に沿った軸の周りに回転させようとしても、第１湾曲部２３から端部２１まで延びる部分が、第２導体板３４との接触面積を増加させるため、ワイヤ部材２０の回転を抑制することができる。また、ワイヤ部材２０は、第１湾曲部２３から端部２１まで延びる部分が、第２電極面４５との接触面積を増加させるため、半導体素子３２の滑りを抑制することができる。 The wire member 20 has a portion extending between the two first curved portions 23 and a portion extending from the first curved portion 23 to the end portion 21. Furthermore, the center of gravity 26 of the wire member 20 is located near the intermediate portion 22 . Therefore, even if the wire member 20 is rotated, for example, around an axis passing through the center of gravity position 26 and along the lateral direction, the portion extending from the first curved portion 23 to the end portion 21 contacts the second conductor plate 34. Therefore, rolling of the wire member 20 can be suppressed. This is because the contact point 24a of the wire member 20 with respect to the second conductive plate 34 may exist at a position spaced apart from the axis along the lateral direction passing through the center of gravity position 26 (see FIG. 6). Further, even if the wire member 20 is rotated, for example, around an axis passing through the center of gravity position 26 and along the vertical direction, the portion extending from the first curved portion 23 to the end portion 21 will not meet the second conductive plate 34. Since the contact area is increased, rotation of the wire member 20 can be suppressed. Further, since the wire member 20 increases the contact area with the second electrode surface 45 in the portion extending from the first curved portion 23 to the end portion 21, slipping of the semiconductor element 32 can be suppressed.

したがって、ワイヤ部材２０は、第１湾曲部２３を有することにより、組み立て工程において、ワイヤ部材２０が第２導体板３４上で転がったり、半導体素子３２がワイヤ部材２０上で滑ったりすることを抑制することができ、ワイヤ部材２０及び半導体素子３２を容易に位置決めすることができる。よって、半導体装置１００では、組み立て工程の作業性を向上させることができる。更に、半導体装置１００では、半導体素子３２及びワイヤ部材２０を適切な位置に載置することができるため、半導体素子３２の反りを確実に抑制することができるため、装置の信頼性を向上させることができる。 Therefore, by having the first curved portion 23, the wire member 20 prevents the wire member 20 from rolling on the second conductor plate 34 and the semiconductor element 32 from slipping on the wire member 20 during the assembly process. Therefore, the wire member 20 and the semiconductor element 32 can be easily positioned. Therefore, in the semiconductor device 100, the workability of the assembly process can be improved. Furthermore, in the semiconductor device 100, since the semiconductor element 32 and the wire member 20 can be placed at appropriate positions, warping of the semiconductor element 32 can be reliably suppressed, thereby improving the reliability of the device. Can be done.

ワイヤ部材２０は、図５に示すように、縦方向から視て、第２電極面４５に対する第２接合材３３の接合面３３ａの内側に配置され、接合面３３ａの角部等の縁部、及び、接合面３３ａの中央部に存在する。すなわち、ワイヤ部材２０は、横方向において第２電極面４５の内側に配置され、第２電極面４５の角部等の縁部、及び、第２電極面４５の中央部において、半導体素子３２と接触し得る。このため、半導体装置１００では、半導体素子３２の反りを確実に抑制することができるだけでなく、半導体素子３２を安定した姿勢で支持することができるため、装置の信頼性を更に向上させることができる。 As shown in FIG. 5, the wire member 20 is disposed inside the bonding surface 33a of the second bonding material 33 with respect to the second electrode surface 45 when viewed from the vertical direction, and includes edges such as corners of the bonding surface 33a, And, it exists in the center of the joint surface 33a. That is, the wire member 20 is arranged inside the second electrode surface 45 in the lateral direction, and is connected to the semiconductor element 32 at the edges such as corners of the second electrode surface 45 and at the center of the second electrode surface 45. can be contacted. Therefore, in the semiconductor device 100, not only can warpage of the semiconductor element 32 be reliably suppressed, but also the semiconductor element 32 can be supported in a stable posture, so that the reliability of the device can be further improved. .

ワイヤ部材２０は、第２電極面４５に沿った方向、すなわち、横方向において、第２電極面４５の中央部から外部に向かって開いた開放部２７を有する。このため、ワイヤ部材２０が埋設された第２接合材３３は、組み立て工程における第２接合材３３の接合の際、第２接合材３３の内部に発生したボイドを外部へ排出させ易くなる。それにより、半導体装置１００では、第２接合材３３のボイド率を低下させることができるため、第２接合材３３の熱抵抗上昇及びクラックの発生を抑制することができ、装置の信頼性を確保することができる。なお、ワイヤ部材２０は、必ずしも開放部２７を有する形状に限定されるわけではない。 The wire member 20 has an open portion 27 that opens outward from the center of the second electrode surface 45 in the direction along the second electrode surface 45, that is, in the lateral direction. Therefore, the second bonding material 33 in which the wire member 20 is embedded can easily discharge voids generated inside the second bonding material 33 when the second bonding material 33 is bonded in the assembly process. As a result, in the semiconductor device 100, since the void ratio of the second bonding material 33 can be reduced, an increase in thermal resistance and the occurrence of cracks in the second bonding material 33 can be suppressed, and the reliability of the device can be ensured. can do. Note that the wire member 20 is not necessarily limited to the shape having the open portion 27.

ここで、ワイヤ部材２０が半導体素子３２の第２電極面４５と接触する際、ワイヤ部材２０が剛体として作用すると、第２電極面４５を傷付けて半導体素子３２を損傷させることが懸念される。 Here, when the wire member 20 comes into contact with the second electrode surface 45 of the semiconductor element 32, if the wire member 20 acts as a rigid body, there is a concern that the second electrode surface 45 may be damaged and the semiconductor element 32 may be damaged.

そこで、本実施形態に係る半導体装置１００では、図６に示すように、ワイヤ部材２０が、第２電極面４５と交差する方向に主に湾曲する第２湾曲部２４，２５を有する。ワイヤ部材２０は、第２湾曲部２４，２５を有することにより、第２導体板３４及び第２電極面４５とは第２湾曲部２４，２５で接触することとなる。第２湾曲部２４と第２湾曲部２５とは、ワイヤ部材２０の軸線に沿って交互に設けられる。 Therefore, in the semiconductor device 100 according to this embodiment, as shown in FIG. 6, the wire member 20 has second curved portions 24 and 25 that are curved mainly in a direction intersecting the second electrode surface 45. Since the wire member 20 has the second curved portions 24 and 25, the second conductive plate 34 and the second electrode surface 45 come into contact with each other at the second curved portions 24 and 25. The second curved portions 24 and the second curved portions 25 are provided alternately along the axis of the wire member 20.

第２湾曲部２４，２５は、第２導体板３４に対するワイヤ部材２０の接触点２４ａと、第２電極面４５に対するワイヤ部材２０の接触点２５ａとを、縦方向に沿った同一直線上に配置せず、横方向の位置が異なる位置となるよう分散させる。このため、ワイヤ部材２０では、半導体素子３２の反りに伴って第１電極面４４から第２電極面４５へ向かう方向に荷重が加わったとしても、ワイヤ部材２０を弾性体（ばね）として作用させることができる。これにより、ワイヤ部材２０は、半導体素子３２の反りに伴って荷重が加わったとしても、弾性体として作用することによって第２電極面４５を傷付けない。よって、半導体装置１００では、半導体素子３２の損傷を抑制することができるため、装置の信頼性を確保することができる。 The second curved portions 24 and 25 arrange a contact point 24a of the wire member 20 with respect to the second conductor plate 34 and a contact point 25a of the wire member 20 with respect to the second electrode surface 45 on the same straight line along the vertical direction. Instead, they are distributed so that their horizontal positions are different. Therefore, in the wire member 20, even if a load is applied in the direction from the first electrode surface 44 to the second electrode surface 45 due to the warpage of the semiconductor element 32, the wire member 20 acts as an elastic body (spring). be able to. Thereby, even if a load is applied due to the warping of the semiconductor element 32, the wire member 20 acts as an elastic body and does not damage the second electrode surface 45. Therefore, in the semiconductor device 100, damage to the semiconductor element 32 can be suppressed, so that reliability of the device can be ensured.

第２湾曲部２４は、第２導体板３４に対するワイヤ部材２０の接触点２４ａが、少なくとも３点存在するように設けられる。そして、第２湾曲部２４は、第２導体板３４に対するワイヤ部材２０の接触点２４ａが、第２電極面４５に直交する方向、すなわち、縦方向から視て、多角形の頂点を成す位置に配置されるように設けられる（図５を参照）。言い換えると、少なくとも３点存在する複数の接触点２４ａは、縦方向から視て、同一直線上に配置されず、横方向に分散して配置される。同様に、第２湾曲部２５は、第２電極面４５に対するワイヤ部材２０の接触点２５ａが、少なくとも３点存在するように設けられる。そして、第２湾曲部２５は、第２電極面４５に対するワイヤ部材２０の接触点２５ａが、第２電極面４５に直交する方向、すなわち、縦方向から視て、多角形の頂点を成す位置に配置されるように設けられる（図５を参照）。言い換えると、少なくとも３点存在する複数の接触点２５ａは、縦方向から視て、同一直線上に配置されず、横方向に分散して配置される。 The second curved portion 24 is provided so that there are at least three contact points 24a of the wire member 20 with respect to the second conductor plate 34. The second curved portion 24 is located at a position where the contact point 24a of the wire member 20 with respect to the second conductor plate 34 forms the apex of the polygon when viewed from the direction perpendicular to the second electrode surface 45, that is, from the vertical direction. (see FIG. 5). In other words, the plurality of contact points 24a, of which there are at least three points, are not arranged on the same straight line when viewed from the vertical direction, but are arranged dispersedly in the horizontal direction. Similarly, the second curved portion 25 is provided so that there are at least three contact points 25a of the wire member 20 with respect to the second electrode surface 45. The second curved portion 25 is located at a position where the contact point 25a of the wire member 20 with respect to the second electrode surface 45 forms the apex of the polygon when viewed from the direction perpendicular to the second electrode surface 45, that is, from the vertical direction. (see FIG. 5). In other words, the plurality of contact points 25a, of which there are at least three, are not arranged on the same straight line when viewed from the vertical direction, but are arranged dispersedly in the horizontal direction.

すなわち、ワイヤ部材２０では、第２導体板３４と少なくとも３点で接触し、第２電極面４５と少なくとも３点で接触する。そして、ワイヤ部材２０は、第２導体板３４及び第２電極面４５のそれぞれとの接触点が、多角形の頂点を成す位置に配置される。このため、ワイヤ部材２０では、半導体素子３２を少なくとも３点で支持することができると共に、第２導体板３４に少なくとも３点で支持され得る。半導体装置１００では、ワイヤ部材２０が半導体素子３２を安定した姿勢で支持することができるため、装置の信頼性を更に向上させることができる。 That is, the wire member 20 contacts the second conductor plate 34 at at least three points, and contacts the second electrode surface 45 at at least three points. The wire member 20 is arranged at a position where the contact points with the second conductor plate 34 and the second electrode surface 45 form the apexes of the polygon. Therefore, the wire member 20 can support the semiconductor element 32 at at least three points, and can also be supported by the second conductor plate 34 at at least three points. In the semiconductor device 100, since the wire member 20 can support the semiconductor element 32 in a stable posture, the reliability of the device can be further improved.

特に、第２湾曲部２４は、複数の接触点２４ａが、第２導体板３４に平行な同一の平面上に配置されるように設けられる。同様に、第２湾曲部２５は、複数の接触点２５ａが、第２導体板３４に平行な同一の平面上に配置されるように設けられる。このため、ワイヤ部材２０は、半導体素子３２を第２導体板３４と平行に支持することができる。半導体装置１００は、半導体素子３２の姿勢が傾斜せず、第２接合材３３の厚さを一定に保つことができるため、装置の信頼性を向上させることができる。 In particular, the second curved portion 24 is provided such that the plurality of contact points 24a are arranged on the same plane parallel to the second conductive plate 34. Similarly, the second curved portion 25 is provided such that the plurality of contact points 25a are arranged on the same plane parallel to the second conductor plate 34. Therefore, the wire member 20 can support the semiconductor element 32 in parallel with the second conductor plate 34. In the semiconductor device 100, the posture of the semiconductor element 32 does not tilt and the thickness of the second bonding material 33 can be kept constant, so that the reliability of the device can be improved.

第２湾曲部２４，２５は、接触点２４ａ及び接触点２５ａが、ワイヤ部材２０の軸線に沿って等間隔に配置されるように設けられる。このため、ワイヤ部材２０では、半導体素子３２を横方向において均等に支持することができる。半導体装置１００では、ワイヤ部材２０が半導体素子３２を安定した姿勢で支持することができるため、装置の信頼性を更に向上させることができる。 The second curved portions 24 and 25 are provided such that the contact point 24a and the contact point 25a are arranged at equal intervals along the axis of the wire member 20. Therefore, the wire member 20 can support the semiconductor element 32 evenly in the lateral direction. In the semiconductor device 100, since the wire member 20 can support the semiconductor element 32 in a stable posture, the reliability of the device can be further improved.

第２湾曲部２４，２５は、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが半導体素子３２に発生しても、ワイヤ部材２０の端部２１が第２電極面４５と接触しないように設けられる。すなわち、ワイヤ部材２０の端部２１は、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが半導体素子３２に発生しても、第２電極面４５と離隔する。ワイヤ部材２０の端部２１は、カットされると鋭利な形状を成すことが多いため、第２電極面４５に接触すると第２電極面４５を傷付けてしまうことが懸念される。ワイヤ部材２０は、第１電極面４４から第２電極面４５へ向かう方向に凸の反りが半導体素子３２に発生しても、端部２１が第２電極面４５と離隔するため、第２電極面４５を傷付けることを抑制することができる。半導体装置１００では、半導体素子３２の損傷を抑制することができ、装置の信頼性を確保することができる。 The second curved portions 24 and 25 are such that even if a convex warpage occurs in the semiconductor element 32 in the direction from the first electrode surface 44 to the second electrode surface 45, the end portion 21 of the wire member 20 It is installed so that it does not come into contact with the That is, the end portion 21 of the wire member 20 is separated from the second electrode surface 45 even if a convex warpage occurs in the semiconductor element 32 in the direction from the first electrode surface 44 to the second electrode surface 45. Since the end portion 21 of the wire member 20 often has a sharp shape when cut, there is a concern that the end portion 21 may damage the second electrode surface 45 if it comes into contact with the second electrode surface 45. Even if a convex warpage occurs in the semiconductor element 32 in the direction from the first electrode surface 44 to the second electrode surface 45, the wire member 20 has the end portion 21 separated from the second electrode surface 45. Damage to the surface 45 can be suppressed. In the semiconductor device 100, damage to the semiconductor element 32 can be suppressed, and reliability of the device can be ensured.

第２湾曲部２４，２５は、図６に示すように、横方向から視ると、第２電極面４５及び第２導体板３４のそれぞれとの間において、隙間を生じさせる。すなわち、第２湾曲部２４，２５は、横方向において第２電極面４５の中央部から外部に向かって開いた開放部２７を生じさせる。このため、ワイヤ部材２０が埋設された第２接合材３３は、組み立て工程における第２接合材３３の接合の際、第２接合材３３の内部に発生したボイドを外部へ排出させ易くなる。半導体装置１００では、第２接合材３３のボイド率を低下させることができるため、第２接合材３３の熱抵抗上昇及びクラックの発生を抑制することができ、装置の信頼性を確保することができる。 As shown in FIG. 6, the second curved portions 24 and 25 create a gap between each of the second electrode surface 45 and the second conductive plate 34 when viewed from the lateral direction. That is, the second curved parts 24 and 25 create an open part 27 that opens outward from the central part of the second electrode surface 45 in the lateral direction. Therefore, the second bonding material 33 in which the wire member 20 is embedded can easily discharge voids generated inside the second bonding material 33 when the second bonding material 33 is bonded in the assembly process. In the semiconductor device 100, since the void ratio of the second bonding material 33 can be reduced, an increase in thermal resistance and the occurrence of cracks in the second bonding material 33 can be suppressed, and the reliability of the device can be ensured. can.

図７は、ワイヤ部材２０の弾性力と接触点間距離との関係をワイヤ径の依存性を考慮してシミュレーションした結果を示す図である。 FIG. 7 is a diagram showing the results of a simulation of the relationship between the elastic force of the wire member 20 and the distance between contact points, taking into consideration the dependence on the wire diameter.

ワイヤ部材２０をＣｕワイヤとし、そのワイヤ径を５０μｍ、７５μｍ、１００μｍとして、図７の上段に示すような計算モデルを用いてシミュレーションを行った。ワイヤ部材２０の第２導体板３４に対する接触点の間の距離をＸとし、ワイヤ部材２０のヤング率をＥとし、ワイヤ部材２０の断面二次モーメントをＩとし、ワイヤ部材２０の縦方向の湾曲による撓み量をνとすると、ワイヤ部材２０の弾性力Ｆ（Ｘ）は、次式で表すことができる。
Ｆ（Ｘ）＝４８ＥＩν／Ｘ３ The wire member 20 was a Cu wire, and the wire diameters were set to 50 μm, 75 μm, and 100 μm, and a simulation was performed using a calculation model as shown in the upper part of FIG. 7. The distance between the contact points of the wire member 20 with respect to the second conductor plate 34 is X, the Young's modulus of the wire member 20 is E, the moment of inertia of the wire member 20 is I, and the longitudinal curvature of the wire member 20 is Letting the amount of deflection due to ν be ν, the elastic force F(X) of the wire member 20 can be expressed by the following equation.
F(X)=48EIν/X 3

図７の下段に示すように、ワイヤ部材２０の弾性力Ｆ（Ｘ）は、接触点間距離Ｘを短くし、且つ、ワイヤ径を大きくすることで増加する。ワイヤ部材２０の弾性力Ｆ（Ｘ）が半導体素子３２の反りによって加わる荷重Ｐ以上である場合、ワイヤ部材２０は、半導体素子の反りを抑制することができる。例えば、半導体素子３２の反りによって加わる荷重Ｐが１Ｎであり、ワイヤ部材２０の縦方向の湾曲による撓み量νが１０μｍであり、ワイヤ部材２０のワイヤ径が７５μｍである場合、接触点間距離Ｘを０．４５ｍｍ以下に設計すると、弾性力Ｆ（Ｘ）が荷重Ｐ以上となるため、ワイヤ部材２０は、半導体素子の反りを抑制することができる。 As shown in the lower part of FIG. 7, the elastic force F(X) of the wire member 20 increases by shortening the distance X between contact points and increasing the wire diameter. When the elastic force F(X) of the wire member 20 is greater than or equal to the load P applied due to the warpage of the semiconductor element 32, the wire member 20 can suppress warpage of the semiconductor element. For example, if the load P applied due to the warpage of the semiconductor element 32 is 1N, the amount of deflection ν due to the vertical curvature of the wire member 20 is 10 μm, and the wire diameter of the wire member 20 is 75 μm, then the distance between the contact points When designed to be 0.45 mm or less, the elastic force F(X) becomes greater than the load P, so the wire member 20 can suppress warping of the semiconductor element.

ワイヤ部材２０は、図７に示すシミュレーション結果に基づいて適宜設計することができる。但し、ワイヤ部材２０のワイヤ径は１５０μｍ以下が好適である。ワイヤ部材２０のワイヤ径は、第２接合材３３の厚さに影響を及ぼすため、第２接合材３３の熱抵抗に影響を及ぼす。第２接合材３３の厚さが薄いほど、第２接合材３３の熱抵抗は小さくなり、半導体装置１００の放熱性が向上し得る。ワイヤ部材２０のワイヤ径が１５０μｍを超えると、第２接合材３３の熱抵抗が大きくなり、半導体素子３２で発生した熱が第２導体板３４へ適切に熱伝導されない可能性がある。よって、ワイヤ部材２０のワイヤ径は１５０μｍ以下が好適である。 The wire member 20 can be appropriately designed based on the simulation results shown in FIG. However, the wire diameter of the wire member 20 is preferably 150 μm or less. The wire diameter of the wire member 20 affects the thickness of the second bonding material 33 and therefore affects the thermal resistance of the second bonding material 33. The thinner the second bonding material 33 is, the smaller the thermal resistance of the second bonding material 33 is, and the heat dissipation of the semiconductor device 100 can be improved. If the wire diameter of the wire member 20 exceeds 150 μm, the thermal resistance of the second bonding material 33 will increase, and there is a possibility that the heat generated in the semiconductor element 32 will not be appropriately conducted to the second conductive plate 34. Therefore, the wire diameter of the wire member 20 is preferably 150 μm or less.

なお、図７のシミュレーションでは、ワイヤ部材２０の縦方向の湾曲部が１つの場合を計算しているが、縦方向の湾曲部が複数の場合には、ワイヤ部材２０の弾性力Ｆ（Ｘ）は、複数の湾曲部で得られる弾性力の合計で表される。 In addition, in the simulation of FIG. 7, the case where the wire member 20 has one curved portion in the vertical direction is calculated, but when there are multiple curved portions in the vertical direction, the elastic force F(X) of the wire member 20 is calculated. is expressed as the sum of elastic forces obtained at multiple curved parts.

図８は、半導体装置１００の組み立て工程に係る製造方法を示す図である。 FIG. 8 is a diagram showing a manufacturing method related to an assembly process of the semiconductor device 100.

ワイヤ部材２０は、例えば、ボビンに巻回されたワイヤをボビンから引き出し、金属棒の押し付け等による加工を施し、所定の長さでカットすることによって、予め第１湾曲部２３及び第２湾曲部２４，２５を形成することができる。ワイヤ部材２０がＣｕワイヤである場合、ワイヤ部材２０の表面が酸化し、第２接合材３３に対する濡れ性が低下し、第２接合材３３にボイドが発生し易くなる可能性が有る。この場合、半導体装置１００の組み立て工程は、Ｃｕの酸化を抑制可能な、水素やギ酸等の還元雰囲気の下で行われると好適である。 For example, the wire member 20 is formed in advance by pulling out a wire wound around a bobbin from the bobbin, applying processing such as pressing with a metal rod, and cutting it to a predetermined length. 24, 25 can be formed. When the wire member 20 is a Cu wire, the surface of the wire member 20 is oxidized, the wettability with respect to the second bonding material 33 is reduced, and there is a possibility that voids are likely to occur in the second bonding material 33. In this case, it is preferable that the assembly process of the semiconductor device 100 be performed in a reducing atmosphere such as hydrogen or formic acid that can suppress oxidation of Cu.

半導体装置１００の組み立て工程では、ステップＳ８０１に示すように、第２導体板３４を用意し、ステップＳ８０２に示すように、第２導体板３４の上にワイヤ部材２０を載置する。ワイヤ部材２０は、第１湾曲部２３を有するため、第２導体板３４の姿勢が傾斜していても転がったりすることなく、横方向の移動が規制され、所望の位置に対して適切に位置決めされる。 In the process of assembling the semiconductor device 100, the second conductor plate 34 is prepared as shown in step S801, and the wire member 20 is placed on the second conductor plate 34 as shown in step S802. Since the wire member 20 has the first curved portion 23, the wire member 20 does not roll even if the second conductor plate 34 is tilted, and lateral movement is restricted, and the wire member 20 can be properly positioned at a desired position. be done.

次に、ステップＳ８０３に示すように、第２導体板３４及びワイヤ部材２０に対して、溶融した第２接合材３３を供給し、半導体素子３２を載置する。そして、スクラブ動作を行い、ステップＳ８０４に示すように、半導体素子３２に対して、上から荷重を加える。これにより、半導体素子３２及び第２導体板３４に対する第２接合材３３の濡れ性が向上し得る。そして、半導体装置１００の組み立て工程では、第２接合材３３を固化させ、半導体素子３２と第２導体板３４とを接合する。第２接合材３３の厚さは、ワイヤ部材２０のワイヤ径と第２湾曲部２４，２５の撓み量との合計値で調整される。 Next, as shown in step S803, the molten second bonding material 33 is supplied to the second conductor plate 34 and the wire member 20, and the semiconductor element 32 is placed thereon. Then, a scrubbing operation is performed, and as shown in step S804, a load is applied to the semiconductor element 32 from above. Thereby, the wettability of the second bonding material 33 with respect to the semiconductor element 32 and the second conductive plate 34 can be improved. Then, in the assembly process of the semiconductor device 100, the second bonding material 33 is solidified and the semiconductor element 32 and the second conductive plate 34 are bonded. The thickness of the second bonding material 33 is adjusted by the total value of the wire diameter of the wire member 20 and the amount of deflection of the second curved portions 24 and 25.

次に、ステップＳ８０５に示すように、半導体素子３２の上に、溶融した第１接合材３１を供給し、第１導体板３０を載置する。この際、スクラブ動作等を行い、半導体素子３２及び第１導体板３０に対する第１接合材３１の濡れ性を向上させる。半導体素子３２には、スクラブ動作と第１導体板３０の重さとによって、上から荷重が加わる。それにより、半導体素子３２は、第１電極面４４から第２電極面４５へ向かう方向に撓もうとするが、ワイヤ部材２０のワイヤ径と縦方向の撓み量に伴う弾性力とによって、半導体素子３２の撓む挙動が規制される。 Next, as shown in step S805, the molten first bonding material 31 is supplied onto the semiconductor element 32, and the first conductor plate 30 is placed on it. At this time, a scrubbing operation or the like is performed to improve the wettability of the first bonding material 31 with respect to the semiconductor element 32 and the first conductive plate 30. A load is applied from above to the semiconductor element 32 due to the scrubbing operation and the weight of the first conductor plate 30 . As a result, the semiconductor element 32 tries to bend in the direction from the first electrode surface 44 to the second electrode surface 45, but due to the wire diameter of the wire member 20 and the elastic force associated with the amount of vertical deflection, the semiconductor element 32 The bending behavior of 32 is regulated.

そして、ステップＳ８０６に示すように、第１接合材３１を固化させ、半導体素子３２と第１導体板３０とを接合する。ステップＳ８０６が完了すると、半導体装置１００の組み立て工程が終了する。 Then, as shown in step S806, the first bonding material 31 is solidified, and the semiconductor element 32 and the first conductor plate 30 are bonded. When step S806 is completed, the assembly process of the semiconductor device 100 is completed.

なお、ステップＳ８０２では、ワイヤ部材２０を第２導体板３４の上に載置するだけでなく、超音波接合方式等のワイヤボンディング装置を用いて、ワイヤ部材２０を第２導体板３４の上に固定してもよい。また、第２接合材３３の固化は、ステップＳ８０６において第１接合材３１の固化と同一のプロセスで行われてもよい。 Note that in step S802, the wire member 20 is not only placed on the second conductor plate 34, but also is placed on the second conductor plate 34 using a wire bonding device such as an ultrasonic bonding method. It may be fixed. Furthermore, the second bonding material 33 may be solidified in the same process as the first bonding material 31 in step S806.

ここで、従来のようにワイヤ部材２０が直線ワイヤである場合、半導体素子３２を適切な姿勢で位置決めするため、直線ワイヤが複数個必要である。この場合、半導体装置１００の組み立て工程では、ワイヤカット動作が複数回必要となる。また、従来のようにワイヤ部材２０の代わりに球状のスペーサを使用する場合、半導体素子３２を適切な姿勢で位置決めするため、球状のスペーサが複数個必要である。この場合、半導体装置１００の組み立て工程では、スペーサを載置する動作が複数回必要となる。 Here, when the wire member 20 is a straight wire as in the conventional case, a plurality of straight wires are required in order to position the semiconductor element 32 in an appropriate posture. In this case, the wire cutting operation is required multiple times in the assembly process of the semiconductor device 100. Further, when a spherical spacer is used instead of the wire member 20 as in the conventional case, a plurality of spherical spacers are required in order to position the semiconductor element 32 in an appropriate posture. In this case, in the assembly process of the semiconductor device 100, the operation of placing the spacer is required multiple times.

これに対して、本実施形態の半導体装置１００では、ワイヤ部材２０が第１湾曲部２３を有することから、１個のワイヤ部材２０であっても、第２電極面４５の角部等の縁部及び中央部において半導体素子３２と接触させることができる。本実施形態に係る半導体装置１００の組み立て工程では、ワイヤ部材２０が１個で足り、ワイヤカット動作が１回で足りる。それにより、半導体装置１００の組み立て工程では、従来よりも組み立て工程に要する時間を短縮することができるため、半導体装置１００の生産性を向上させることができる。 On the other hand, in the semiconductor device 100 of the present embodiment, since the wire member 20 has the first curved portion 23, even if one wire member 20 has an edge such as a corner of the second electrode surface 45, It can be brought into contact with the semiconductor element 32 at both the central and central portions. In the assembly process of the semiconductor device 100 according to this embodiment, one wire member 20 is sufficient, and one wire cutting operation is sufficient. Thereby, in the assembly process of the semiconductor device 100, the time required for the assembly process can be reduced compared to the conventional method, so that the productivity of the semiconductor device 100 can be improved.

[ワイヤ部材の変形例]
図９は、ワイヤ部材２０の変形例１を説明するための図である。なお、図９は、図５に相当する図である。図９では、ワイヤ部材２０のハッチングの図示が省略されていると共に、第１封止樹脂６の図示が省略されている。 [Example of modification of wire member]
FIG. 9 is a diagram for explaining modification example 1 of the wire member 20. Note that FIG. 9 is a diagram corresponding to FIG. 5. In FIG. 9, illustration of the hatching of the wire member 20 is omitted, and illustration of the first sealing resin 6 is also omitted.

ワイヤ部材２０は、図９に示すように、縦方向から視て、「Ｓ字」状を成すように形成されてもよい。図９に示すワイヤ部材２０では、図５に示すワイヤ部材２０と同様に、２つの第１湾曲部２３を有するため、組み立て工程において、ワイヤ部材２０が第２導体板３４上で転がったり、半導体素子３２がワイヤ部材２０上で滑ったりすることを抑制することができる。 As shown in FIG. 9, the wire member 20 may be formed in an "S" shape when viewed from the vertical direction. Like the wire member 20 shown in FIG. 5, the wire member 20 shown in FIG. It is possible to suppress the element 32 from slipping on the wire member 20.

更に、図９に示すワイヤ部材２０は、第１湾曲部２３の曲率半径が、図５に示すワイヤ部材２０よりも大きくなるため、第１湾曲部２３の形成が容易になると共に、第１湾曲部２３における剛性が小さくなり得る。このため、図９に示すワイヤ部材２０は、第２電極面４５に接触しても、図５に示すワイヤ部材２０より第２電極面４５を傷付け難くなり得る。 Furthermore, in the wire member 20 shown in FIG. 9, the radius of curvature of the first curved portion 23 is larger than that of the wire member 20 shown in FIG. The rigidity in the portion 23 may be reduced. Therefore, even if the wire member 20 shown in FIG. 9 comes into contact with the second electrode surface 45, the wire member 20 shown in FIG. 5 may be less likely to damage the second electrode surface 45 than the wire member 20 shown in FIG.

図１０は、ワイヤ部材２０の変形例２を説明するための図である。なお、図１０は、図５に相当する図である。図１０では、ワイヤ部材２０のハッチングの図示が省略されていると共に、第１封止樹脂６の図示が省略されている。 FIG. 10 is a diagram for explaining modification example 2 of the wire member 20. Note that FIG. 10 is a diagram corresponding to FIG. 5. In FIG. 10, illustration of the hatching of the wire member 20 is omitted, and illustration of the first sealing resin 6 is also omitted.

ワイヤ部材２０は、図１０に示すように、縦方向から視て「への字」状を成すように形成されてもよい。図１０に示すワイヤ部材２０は、１つの第１湾曲部２３を有するため、第１湾曲部２３の形成が更に容易になる。 As shown in FIG. 10, the wire member 20 may be formed so as to have a "curved" shape when viewed from the vertical direction. Since the wire member 20 shown in FIG. 10 has one first curved portion 23, the formation of the first curved portion 23 is further facilitated.

図１０に示すワイヤ部材２０は、図５に示すワイヤ部材２０とは異なり、重心位置２６がワイヤ部材２０から離れた位置に存在する。但し、図１０に示すワイヤ部材２０においても、図５に示すワイヤ部材２０と同様に、第２導体板３４に対するワイヤ部材２０の接触点２４ａが、重心位置２６を通り横方向に沿った軸から離隔した位置に存在し得る。このため、図１０に示すワイヤ部材２０は、例えば、重心位置２６を通り横方向に沿った軸の周りに回転させようとしても、第１湾曲部２３から端部２１まで延びる部分が第２導体板３４に接触するため、ワイヤ部材２０の転がりを抑制することができる。 The wire member 20 shown in FIG. 10 differs from the wire member 20 shown in FIG. 5 in that the center of gravity 26 is located away from the wire member 20. However, in the wire member 20 shown in FIG. 10 as well, similarly to the wire member 20 shown in FIG. May exist in remote locations. Therefore, even if the wire member 20 shown in FIG. 10 is rotated, for example, around an axis passing through the center of gravity position 26 and along the lateral direction, the portion extending from the first curved portion 23 to the end portion 21 is connected to the second conductor. Since it contacts the plate 34, rolling of the wire member 20 can be suppressed.

そして、図１０に示すワイヤ部材２０は、図５に示すワイヤ部材２０と同様に、第２導体板３４との接触面積を増加させるため、縦方向に沿った軸の周りのワイヤ部材２０の回転を抑制することができる。更に、図１０に示すワイヤ部材２０は、図５に示すワイヤ部材２０と同様に、第１湾曲部２３から端部２１まで延びる部分が、第２電極面４５との接触面積を増加させるため、半導体素子３２の滑りを抑制することができる。 Similarly to the wire member 20 shown in FIG. 5, the wire member 20 shown in FIG. can be suppressed. Furthermore, like the wire member 20 shown in FIG. 5, the wire member 20 shown in FIG. Slippage of the semiconductor element 32 can be suppressed.

よって、図１０に示すワイヤ部材２０では、図５に示すワイヤ部材２０と同様に、組み立て工程において、ワイヤ部材２０が第２導体板３４上で転がったり、半導体素子３２がワイヤ部材２０上で滑ったりすることを抑制することができる。 Therefore, in the wire member 20 shown in FIG. 10, like the wire member 20 shown in FIG. It is possible to suppress the occurrence of

図１１は、ワイヤ部材２０の変形例３を説明するための図である。なお、図１１は、図５に示すＤ－Ｄ線にて半導体装置１００を横方向から視た矢視図である。図１１では、第１封止樹脂６の図示が省略されている。 FIG. 11 is a diagram for explaining a third modification of the wire member 20. Note that FIG. 11 is a view of the semiconductor device 100 viewed from the lateral direction along line DD shown in FIG. In FIG. 11, illustration of the first sealing resin 6 is omitted.

ワイヤ部材２０は、図１１に示すように、横方向から視て螺旋状を成すように形成されてもよい。ワイヤ部材２０は、螺旋軸６１が横方向に沿って延び、螺旋軸６１の周りを回転しながら横方向に沿って延びるように形成される。 As shown in FIG. 11, the wire member 20 may be formed in a spiral shape when viewed from the side. The wire member 20 is formed so that the helical axis 61 extends in the lateral direction, and extends in the lateral direction while rotating around the helical axis 61.

図１１に示すワイヤ部材２０においても、図６に示すワイヤ部材２０と同様に、第２電極面４５と交差する方向に湾曲する第２湾曲部２４，２５を有する。そして、図１１に示すワイヤ部材２０においても、図６に示すワイヤ部材２０と同様に、第２導体板３４に対するワイヤ部材２０の接触点２４ａと、第２電極面４５に対するワイヤ部材２０の接触点２５ａとが、縦方向に沿った同一直線上に配置されず、横方向の位置が異なる位置となるよう分散して配置される。このため、図１１に示すワイヤ部材２０においても、図６に示すワイヤ部材２０と同様に、弾性体（ばね）として作用し得るため、第２電極面４５と接触する際に第２電極面４５を傷付けることを抑制することができる。 Similarly to the wire member 20 shown in FIG. 6, the wire member 20 shown in FIG. 11 has second curved portions 24 and 25 that curve in a direction intersecting the second electrode surface 45. Also, in the wire member 20 shown in FIG. 11, similarly to the wire member 20 shown in FIG. 25a are not arranged on the same straight line along the vertical direction, but are arranged in a dispersed manner so that their positions in the horizontal direction are different. Therefore, the wire member 20 shown in FIG. 11 can act as an elastic body (spring) similarly to the wire member 20 shown in FIG. It is possible to prevent damage to the

[その他]
なお、本発明は上記の実施形態に限定されるものではなく、様々な変形例が含まれる。例えば、上記の実施形態は本発明を分かりやすく説明するために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。また、ある実施形態の構成の一部を他の実施形態の構成に置き換えることが可能であり、また、ある実施形態の構成に他の実施形態の構成を加えることも可能である。また、各実施形態の構成の一部について、他の構成の追加・削除・置換をすることが可能である。 [others]
Note that the present invention is not limited to the above-described embodiments, and includes various modifications. For example, the above-described embodiments have been described in detail to explain the present invention in an easy-to-understand manner, and the present invention is not necessarily limited to having all the configurations described. Furthermore, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is possible to add, delete, or replace some of the configurations of each embodiment with other configurations.

また、上記の各構成、機能、処理部、処理手段等は、それらの一部又は全部を、例えば集積回路で設計する等によりハードウェアで実現してもよい。また、上記の各構成、機能等は、プロセッサがそれぞれの機能を実現するプログラムを解釈し、実行することによりソフトウェアで実現してもよい。各機能を実現するプログラム、テープ、ファイルなどの情報は、メモリや、ハードディスク、ＳＳＤ（Solid State Drive）等の記録装置、又は、ＩＣカード、ＳＤカード、ＤＶＤ等の記録媒体に置くことができる。 Further, each of the above-mentioned configurations, functions, processing units, processing means, etc. may be partially or entirely realized in hardware by designing, for example, an integrated circuit. Furthermore, each of the above configurations, functions, etc. may be realized by software by a processor interpreting and executing a program for realizing each function. Information such as programs, tapes, and files that implement each function can be stored in a memory, a recording device such as a hard disk, an SSD (Solid State Drive), or a recording medium such as an IC card, SD card, or DVD.

また、制御線や情報線は説明上必要と考えられるものを示しており、製品上必ずしも全ての制御線や情報線を示しているとは限らない。実際には殆ど全ての構成が相互に接続されていると考えてもよい。 Further, the control lines and information lines are shown to be necessary for explanation purposes, and not all control lines and information lines are necessarily shown in the product. In reality, almost all components may be considered to be interconnected.

２０…ワイヤ部材 ２１…端部
２３…第１湾曲部 ２４，２５…第２湾曲部
２４ａ，２５ａ…接触点 ２６…重心位置
２７…開放部 ３０…第１導体板
３１…第１接合材 ３２…半導体素子
３３…第２接合材 ３４…第２導体板
４４…第１電極面 ４５…第２電極面
１００…半導体装置 20... Wire member 21... End portion 23... First curved part 24, 25... Second curved part 24a, 25a... Contact point 26... Center of gravity position 27... Open part 30... First conductor plate 31... First bonding material 32... Semiconductor element 33... Second bonding material 34... Second conductor plate 44... First electrode surface 45... Second electrode surface 100... Semiconductor device

Claims (6)

一方の面に形成された第１電極面と、前記一方の面と反対の他方の面に形成された第２電極面とを有する半導体素子と、
前記第１電極面に第１接合材を介して接合される第１導体板と、
前記第２電極面に第２接合材を介して接合される第２導体板と、
前記第２電極面と前記第２導体板との間に設けられるワイヤ部材と
を備え、
前記ワイヤ部材は、１本の湾曲した金属ワイヤによって構成され、前記第２導体板に載置された状態で前記第２接合材の内部に埋設されており、
前記ワイヤ部材は、前記第２電極面に沿った方向に湾曲する複数の第１湾曲部を有し、
前記ワイヤ部材は、前記第２電極面に沿った方向において前記第２電極面の中央部から外部に向かう少なくとも２つの方向に開放されており、
前記２つの方向は、互いに反対向きである
ことを特徴とする半導体装置。 a semiconductor element having a first electrode surface formed on one surface and a second electrode surface formed on the other surface opposite to the one surface;
a first conductor plate bonded to the first electrode surface via a first bonding material;
a second conductor plate bonded to the second electrode surface via a second bonding material;
a wire member provided between the second electrode surface and the second conductor plate,
The wire member is composed of one curved metal wire, and is buried inside the second bonding material while being placed on the second conductor plate,
The wire member has a plurality of first curved portions that curve in a direction along the second electrode surface,
The wire member is open in at least two directions extending outward from a central portion of the second electrode surface in a direction along the second electrode surface,
the two directions are opposite to each other
A semiconductor device characterized by: 前記ワイヤ部材は、前記第２電極面と交差する方向に湾曲する第２湾曲部を有し、
前記第２湾曲部は、前記第２電極面から前記第１電極面に向かう方向に湾曲する部分において前記第２電極面に接触する接触点と、前記第１電極面から前記第２電極面に向かう方向に湾曲する部分において前記第２導体板に接触する接触点とを有し、
前記第２電極面に接触する前記接触点と、前記第２導体板に接触する前記接触点とは、前記ワイヤ部材の軸線に沿って交互且つ等間隔に配置される
ことを特徴とする請求項１に記載の半導体装置。 The wire member has a second curved portion that curves in a direction intersecting the second electrode surface,
The second curved portion has a contact point that contacts the second electrode surface at a portion that curves in a direction from the second electrode surface toward the first electrode surface, and a contact point that contacts the second electrode surface from the first electrode surface to the second electrode surface. a contact point that contacts the second conductor plate at a portion that curves in the direction toward the second conductor plate;
The contact points that contact the second electrode surface and the contact points that contact the second conductor plate are arranged alternately and at equal intervals along the axis of the wire member.
The semiconductor device according to claim 1, characterized in that: 前記ワイヤ部材は、前記第２電極面に直交する方向から視て、前記第１電極面に対する前記第１接合材の接合面と重複する領域に設けられる
ことを特徴とする請求項１に記載の半導体装置。 The wire member is provided in a region that overlaps with a bonding surface of the first bonding material to the first electrode surface when viewed from a direction perpendicular to the second electrode surface. Semiconductor equipment. 前記ワイヤ部材は、前記第２電極面と少なくとも３点で接触し、前記第２導体板と少なくとも３点で接触し、
前記第２電極面に対する前記ワイヤ部材の前記接触点は、前記第２電極面に直交する方向から視て多角形の頂点を成す位置に配置され、
前記第２導体板に対する前記ワイヤ部材の前記接触点は、前記第２電極面に直交する方向から視て多角形の頂点を成す位置に配置される
ことを特徴とする請求項２に記載の半導体装置。 The wire member contacts the second electrode surface at at least three points, and contacts the second conductive plate at at least three points,
The contact point of the wire member with respect to the second electrode surface is located at a position that forms an apex of a polygon when viewed from a direction perpendicular to the second electrode surface,
The semiconductor according to claim 2 , wherein the contact point of the wire member with the second conductor plate is located at a position that forms an apex of a polygon when viewed from a direction perpendicular to the second electrode surface. Device. 前記ワイヤ部材の端部は、前記第２電極面と離隔する
ことを特徴とする請求項４に記載の半導体装置。 5. The semiconductor device according to claim 4 , wherein an end of the wire member is spaced apart from the second electrode surface. 前記ワイヤ部材の材料は、前記第２電極面の材料よりも小さい硬さを有する
ことを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein a material of the wire member has a hardness smaller than a material of the second electrode surface.
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