JP7414570B2 - Holding devices and lithography devices - Google Patents

Holding devices and lithography devices Download PDF

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JP7414570B2
JP7414570B2 JP2020023663A JP2020023663A JP7414570B2 JP 7414570 B2 JP7414570 B2 JP 7414570B2 JP 2020023663 A JP2020023663 A JP 2020023663A JP 2020023663 A JP2020023663 A JP 2020023663A JP 7414570 B2 JP7414570 B2 JP 7414570B2
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flow path
gas
pressure loss
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哲平 新美
智裕 石井
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Scissors And Nippers (AREA)

Description

本発明は、保持装置、およびリソグラフィ装置に関する。 FIELD OF THE INVENTION The present invention relates to a holding device and a lithographic apparatus.

基板にパターンを形成するリソグラフィ装置は、原版または基板等の物体を保持するための保持装置を有する。保持装置において、原版または基板を保持する方式としては、真空吸引方式と静電吸着方式がある。 A lithographic apparatus that forms a pattern on a substrate has a holding device for holding an object such as an original or a substrate. In the holding device, methods for holding the original or substrate include a vacuum suction method and an electrostatic adsorption method.

リソグラフィ装置の安定した運用のためには、以下のようなことを確実に確認することが必要である。
（ａ）物体が正しく保持装置に設置されていること。
（ｂ）装置がいったんシャットダウンされた後、再度立ち上げられた時に、物体が保持装置から取り除かれ、手作業等で物体が保持装置上に置かれる等されていないこと。 For stable operation of a lithography apparatus, it is necessary to reliably confirm the following.
(a) The object is correctly placed in the holding device.
(b) When the device is shut down and restarted, the object is not removed from the holding device and the object is not manually placed on the holding device.

本明細書において、保持装置上に物体が載置されていることを「在荷 (load presence)」という。従来、在荷の確認は、例えば、光電変換素子を用いたフォトスイッチや接触スイッチ等の検出スイッチを用いて行われる。しかし、設置スペースの制約から、そのような検出スイッチを配置できない場合がある。その場合、真空吸引方式の保持装置においては、吸引孔の圧力を検出して在荷を確認する方法がとられる。特許文献１は、複数の吸引孔のそれぞれに対して圧力センサを配置した構成を開示している。 In this specification, the presence of an object on the holding device is referred to as "load presence." Conventionally, the presence of goods has been confirmed using, for example, a detection switch such as a photoswitch or a contact switch using a photoelectric conversion element. However, due to installation space limitations, it may not be possible to arrange such a detection switch. In this case, in a vacuum suction type holding device, a method is adopted in which the pressure of the suction hole is detected to confirm the presence of the goods. Patent Document 1 discloses a configuration in which a pressure sensor is arranged for each of a plurality of suction holes.

特開２０１１－１４６６６３号公報Japanese Patent Application Publication No. 2011-146663

保持装置は、一般に、搭載面に対して物体を載置または浮上させる際に出没する複数の支持ピンを備える。複数の支持ピンのそれぞれの物体との当接部（すなわちピンの先端部）に、吸引孔が設けられる。従来、支持ピンの本数は３本が標準的であったが、近年は物体の大型化が進んでおり、物体の撓みを防止するため、支持ピンの本数を４本以上とする構成が増えている。 The holding device generally includes a plurality of support pins that retract and retract when placing or floating an object relative to a mounting surface. A suction hole is provided at the portion of each of the plurality of support pins that comes into contact with the object (ie, the tip of the pin). Traditionally, the standard number of support pins was three, but in recent years, as objects have become larger, configurations with four or more support pins are increasing in order to prevent objects from bending. There is.

しかし、支持ピンの本数を４本以上とすると、いずれかの吸引孔で吸着不良が起こりやすく、従来の在荷確認手法では、複数の吸引孔に１つでも吸着不良があると、在荷なしと誤検知されてしまう。そこで、特許文献１のように、吸引孔ごとに圧力センサを設置することも考えられるが、コスト増大および設置スペース増大が問題となりうる。 However, when the number of support pins is four or more, suction failure is likely to occur in one of the suction holes, and with conventional inventory confirmation methods, if there is suction failure in even one of multiple suction holes, the item is not present. It is falsely detected. Therefore, it is conceivable to install a pressure sensor for each suction hole as in Patent Document 1, but this may result in increased cost and increased installation space.

本発明は、物体が載置されていることの検知性能の点で有利な技術を提供する。 The present invention provides a technique that is advantageous in terms of performance in detecting that an object is placed.

本発明の一側面によれば、真空吸引によって物体を保持する保持装置であって、前記物体が載置される保持面の上に形成された第１吸引部および第２吸引部を有する保持部と、前記第１吸引部と真空源とを接続し気体が流通する第１流路と、前記第２吸引部と前記真空源とを接続し気体が流通する第２流路と、前記第１流路から分岐して気体が流通する第３流路と、前記第２流路から分岐して気体が流通する第４流路と、第５流路と、前記真空源と接続して気体が流通する第６流路と、前記第５流路に配置され、前記第５流路内の圧力または気体流量を計測する計測部と、前記第３流路と前記第５流路とを接続し、前記第３流路から前記第５流路へ向かう気体の流れを制限する第１制限部と、前記第４流路と前記第５流路とを接続し、前記第４流路から前記第５流路へ向かう気体の流れを制限する第２制限部と、前記第５流路と前記第６流路とを接続し、前記第５流路から前記第６流路へ向かう気体の流れを制限する第３制限部と、を有することを特徴とする保持装置が提供される。 According to one aspect of the present invention, there is provided a holding device for holding an object by vacuum suction, the holding portion having a first suction portion and a second suction portion formed on a holding surface on which the object is placed. a first flow path that connects the first suction section and the vacuum source and through which gas flows; a second flow path that connects the second suction section and the vacuum source and through which gas flows; a third flow path that branches off from the flow path and through which gas flows; a fourth flow path that branches off from the second flow path and through which gas flows; a fifth flow path that is connected to the vacuum source and through which gas flows; A sixth flow path that flows, a measurement unit that is disposed in the fifth flow path and measures the pressure or gas flow rate in the fifth flow path, and connects the third flow path and the fifth flow path. , a first restriction part that restricts the flow of gas from the third flow path to the fifth flow path, and a first restriction part that connects the fourth flow path and the fifth flow path; A second restriction part that restricts the flow of gas toward the fifth flow path connects the fifth flow path and the sixth flow path, and restricts the flow of gas from the fifth flow path toward the sixth flow path. A holding device is provided, characterized in that it has a third limiting portion.

本発明によれば、物体が載置されていることの検知性能の点で有利な技術を提供することができる。 According to the present invention, it is possible to provide a technology that is advantageous in terms of performance in detecting that an object is placed.

保持装置の構成を示す図。The figure which shows the structure of a holding device. リフトピンの構成を示す図。The figure which shows the structure of a lift pin. 露光装置の構成を示す図。FIG. 1 is a diagram showing the configuration of an exposure apparatus. 在荷確認時の保持装置における気体の流れを説明する図。FIG. 3 is a diagram illustrating the flow of gas in the holding device when checking the presence of goods. 在荷確認時の保持装置における気体の流れを説明する図。FIG. 3 is a diagram illustrating the flow of gas in the holding device when checking the presence of goods. 保持装置の構成を示す図。The figure which shows the structure of a holding device. 在荷確認時の保持装置における気体の流れを説明する図。FIG. 3 is a diagram illustrating the flow of gas in the holding device when checking the presence of goods. 在荷確認時の保持装置における気体の流れを説明する図。FIG. 3 is a diagram illustrating the flow of gas in the holding device when checking the presence of goods. チャックの保持面の構成例を示す平面図。FIG. 3 is a plan view showing an example of the configuration of a holding surface of a chuck. 保持装置の構成を示す図。The figure which shows the structure of a holding device.

以下、添付図面を参照して実施形態を詳しく説明する。なお、以下の実施形態は特許請求の範囲に係る発明を限定するものではない。実施形態には複数の特徴が記載されているが、これらの複数の特徴の全てが発明に必須のものとは限らず、また、複数の特徴は任意に組み合わせられてもよい。さらに、添付図面においては、同一若しくは同様の構成に同一の参照番号を付し、重複した説明は省略する。 Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the claimed invention. Although a plurality of features are described in the embodiments, not all of these features are essential to the invention, and the plurality of features may be arbitrarily combined. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and redundant description will be omitted.

＜第１実施形態＞
本発明に係る保持装置は、真空吸引によって物体を保持する装置であって、例えば、原版のパターンを基板に形成するリソグラフィ装置に適用されうるものである。以下では、保持装置がリソグラフィ装置の一例である露光装置に適用された例を説明する。ただし、リソグラフィ装置は露光装置に限らず、他のリソグラフィ装置であってもよい。例えば、リソグラフィ装置は、荷電粒子線で基板（の上の感光剤）に描画を行う描画装置であってもよい。あるいは、リソグラフィ装置は、基板上のインプリント材を型で成形して基板にパターンを形成するインプリント装置であってもよい。 <First embodiment>
The holding device according to the present invention is a device that holds an object by vacuum suction, and can be applied, for example, to a lithography apparatus that forms a pattern of an original on a substrate. An example in which the holding device is applied to an exposure apparatus, which is an example of a lithography apparatus, will be described below. However, the lithography apparatus is not limited to an exposure apparatus, and may be another lithography apparatus. For example, the lithography apparatus may be a drawing apparatus that performs drawing on (a photosensitive material on) a substrate using a charged particle beam. Alternatively, the lithography apparatus may be an imprint apparatus that forms a pattern on the substrate by molding an imprint material on the substrate with a mold.

図３は、本発明の保持装置が適用される、リソグラフィ装置の一例である露光装置３００の概略図である。本明細書および図面においては、水平面をＸＹ平面とするＸＹＺ座標系において方向が示される。一般には、基板Ｗはその表面が水平面（ＸＹ平面）と平行になるように基板ステージの上に置かれる。よって以下では、基板Ｗの表面に沿う平面内で互いに直交する方向をＸ軸およびＹ軸とし、Ｘ軸およびＹ軸に垂直な方向をＺ軸とする。また、以下では、ＸＹＺ座標系におけるＸ軸、Ｙ軸、Ｚ軸にそれぞれ平行な方向をＸ方向、Ｙ方向、Ｚ方向という。 FIG. 3 is a schematic diagram of an exposure apparatus 300, which is an example of a lithography apparatus, to which the holding device of the present invention is applied. In this specification and the drawings, directions are shown in an XYZ coordinate system in which the horizontal plane is the XY plane. Generally, the substrate W is placed on a substrate stage so that its surface is parallel to a horizontal plane (XY plane). Therefore, hereinafter, directions perpendicular to each other within a plane along the surface of the substrate W will be referred to as the X-axis and the Y-axis, and a direction perpendicular to the X-axis and the Y-axis will be referred to as the Z-axis. Further, hereinafter, directions parallel to the X axis, Y axis, and Z axis in the XYZ coordinate system are referred to as the X direction, Y direction, and Z direction, respectively.

露光装置３００は、半導体デバイスの回路パターンが形成された原版であるレチクル３０３を用いて、その回路パターン基板Ｗに転写する装置である。露光装置３００は、例えば、投影光学系３０６と基板Ｗとの間に液体を介在させずに基板Ｗを露光する露光装置でありうる。あるいは、露光装置３００は、投影光学系３０６と基板Ｗとの間に液体を介在させて基板Ｗを露光する液浸露光装置であってもよい。 The exposure apparatus 300 is an apparatus that uses a reticle 303, which is an original plate on which a circuit pattern of a semiconductor device is formed, to transfer the circuit pattern onto a substrate W. The exposure apparatus 300 may be, for example, an exposure apparatus that exposes the substrate W without interposing a liquid between the projection optical system 306 and the substrate W. Alternatively, the exposure apparatus 300 may be an immersion exposure apparatus that exposes the substrate W by interposing a liquid between the projection optical system 306 and the substrate W.

照明光学系３０２は、光源３０１からの光を調整してレチクル３０３を照明する。投影光学系３０６は、照明されたレチクル３０３に形成されているパターンの像を基板Ｗに投影する。レチクルステージ３０４は、レチクル３０３を保持してＸ軸方向に移動しうる。基板ステージ３１３は、物体である基板Ｗを保持する保持装置Ｈを支持し、リニアモータ等の駆動機構（不図示）によって、保持装置Ｈ（すなわち基板Ｗ）を移動させる。 Illumination optical system 302 adjusts the light from light source 301 to illuminate reticle 303 . The projection optical system 306 projects an image of the pattern formed on the illuminated reticle 303 onto the substrate W. The reticle stage 304 can hold the reticle 303 and move in the X-axis direction. The substrate stage 313 supports a holding device H that holds a substrate W as an object, and moves the holding device H (that is, the substrate W) by a drive mechanism (not shown) such as a linear motor.

露光装置３００は、レチクルステージ３０４と基板ステージ３１３とによってレチクル３０３と基板Ｗを相対的に走査させながら、基板Ｗ上のレジストにパターンを形成する。干渉計３１４は、レチクルステージ３０４に配置されたミラー３０５にレーザ光を照射しその反射光を受光することにより、レチクル３０３の位置を検出する。干渉計３１１は、基板ステージ３１３に配置されたミラー３１２にレーザ光を照射しその反射光を受光することにより、基板Ｗの位置を検出する。検出系３０７は、基板Ｗに形成されているアライメントマーク（不図示）や基板ステージ３１３上に設けられた基準マーク（不図示）を検出する。 The exposure apparatus 300 forms a pattern on the resist on the substrate W while relatively scanning the reticle 303 and the substrate W using the reticle stage 304 and the substrate stage 313. The interferometer 314 detects the position of the reticle 303 by irradiating a laser beam onto a mirror 305 disposed on the reticle stage 304 and receiving the reflected light. The interferometer 311 detects the position of the substrate W by irradiating a mirror 312 placed on the substrate stage 313 with a laser beam and receiving the reflected light. The detection system 307 detects alignment marks (not shown) formed on the substrate W and reference marks (not shown) provided on the substrate stage 313.

制御部３１０は、レチクルステージ３０４、基板ステージ３１３、検出系３０７、干渉計３０４、干渉計３１１、および保持装置Ｈと接続されており、これらを統括的に制御する。例えば、露光処理時には、検出系３０７の検出結果に基づいてパターンの形成位置を決定し、干渉計３１４および干渉計３１１から得られる位置情報に基づいてレチクルステージ３０４、基板ステージ３１３を制御する。 The control unit 310 is connected to the reticle stage 304, the substrate stage 313, the detection system 307, the interferometer 304, the interferometer 311, and the holding device H, and controls these in an integrated manner. For example, during exposure processing, the pattern formation position is determined based on the detection result of the detection system 307, and the reticle stage 304 and substrate stage 313 are controlled based on position information obtained from the interferometer 314 and the interferometer 311.

保持装置Ｈは、基板の保持部であるチャック３０８と、基板Ｗの搬入及び搬出時に基板Ｗを支持する複数のリフトピン３０と、複数のリフトピン３０を支持する支持部３０９とを有する。複数のリフトピン３０は、チャック３０８の上面（基板の保持面）に対して昇降可能である。支持部３０９は、複数のリフトピン３０を昇降させる昇降機構（不図示）を有する。基板搬送ハンドより基板Ｗが搬入される際、複数のリフトピン３０はその上端がチャック３０８の上面よりも上になるように上昇移動し、基板搬送ハンドより基板Ｗを受け取る。制御部３１０は、基板搬送ハンドから複数のリフトピン３０上へ基板Ｗが受け渡された際、基板が複数のリフトピン３０上に正常に載置されたかを確認する在荷確認を行う。在荷確認により基板が正常に載置されたことが確認されると、複数のリフトピン３０はその上端がチャック３０８の上面より下になるように下降移動し、これにより基板はチャック３０８の載置面に置かれる。なお、ここでは、複数のリフトピン３０がチャック３０８の載置面に対して昇降する構成であるとしたが、複数のリフトピン３０は固定でチャック３０８が昇降する構成としてもよい。 The holding device H includes a chuck 308 that is a holding portion for the substrate, a plurality of lift pins 30 that supports the substrate W during loading and unloading the substrate W, and a support portion 309 that supports the plurality of lift pins 30. The plurality of lift pins 30 are movable up and down relative to the upper surface of the chuck 308 (the substrate holding surface). The support portion 309 has an elevating mechanism (not shown) that moves the plurality of lift pins 30 up and down. When the substrate W is carried in by the substrate transfer hand, the plurality of lift pins 30 move upward so that their upper ends are above the upper surface of the chuck 308, and receive the substrate W from the substrate transfer hand. When the substrate W is transferred from the substrate transfer hand onto the plurality of lift pins 30, the control unit 310 performs an inventory check to confirm whether the substrate has been properly placed on the plurality of lift pins 30. When it is confirmed by the inventory check that the substrate has been correctly placed, the plurality of lift pins 30 move downward so that their upper ends are below the top surface of the chuck 308, and thereby the substrate is placed on the chuck 308. placed on the surface. Note that although the plurality of lift pins 30 are configured to move up and down with respect to the mounting surface of the chuck 308 here, the structure may be such that the plurality of lift pins 30 are fixed and the chuck 308 moves up and down.

図１は保持装置Ｈの具体的な構成例を示す図である。また、図２はリフトピン３０の構造を示す図であり、その上部には図１におけるリフトピン３０の拡大側面図が示され、下部にはリフトピン３０の上端面を表す平面図が示されている。 FIG. 1 is a diagram showing a specific example of the configuration of the holding device H. Moreover, FIG. 2 is a diagram showing the structure of the lift pin 30, in which an enlarged side view of the lift pin 30 in FIG. 1 is shown in the upper part, and a plan view showing the upper end surface of the lift pin 30 is shown in the lower part.

複数のリフトピン３０は、チャック３０８の保持面３０８ａの上で基板Ｗを真空吸引によって保持することができる。図２に示すように、リフトピン３０はその上端に、基板Ｗを載置する載置面３１を有する。また、リフトピン３０には載置面３１に連通された中空部が形成されており、この中空部は基板Ｗを真空吸引するための吸引孔３２として機能する。 The plurality of lift pins 30 can hold the substrate W on the holding surface 308a of the chuck 308 by vacuum suction. As shown in FIG. 2, the lift pin 30 has a mounting surface 31 on its upper end on which the substrate W is mounted. Further, the lift pin 30 is formed with a hollow portion that communicates with the mounting surface 31, and this hollow portion functions as a suction hole 32 for vacuum suctioning the substrate W.

複数のリフトピン３０は、複数のセクションに分割されうる。各セクションの吸引孔は１つの系統にまとめられて真空装置（真空源）と接続される。図１の例では、複数のリフトピン３０は、セクションＡ（第１吸引部）とセクションＢ（第２吸引部）に分割される。言い換えると、セクションＡおよびセクションＢはそれぞれ、複数のリフトピン３０のうちの１つ以上のリフトピンを含む。なお、セクションに分割する理由は、多数のリフトピンの中から吸着異常を特定する工数を減らすためである。よって、本発明はセクションに分割することは必須ではない。セクションの分割をしない場合には、各リフトピン（各吸引孔）が各吸引部を構成する。 The multiple lift pins 30 may be divided into multiple sections. The suction holes of each section are combined into one system and connected to a vacuum device (vacuum source). In the example of FIG. 1, the plurality of lift pins 30 are divided into section A (first suction section) and section B (second suction section). In other words, section A and section B each include one or more lift pins of the plurality of lift pins 30. Note that the reason for dividing into sections is to reduce the number of steps required to identify suction abnormalities among a large number of lift pins. Therefore, it is not essential for the present invention to be divided into sections. When the sections are not divided, each lift pin (each suction hole) constitutes each suction part.

セクションＡにおける吸引孔３２のそれぞれは、気体が流通する流路３３Ａと接続され、それぞれの流路３３Ａは第１流路１に合流され、第１流路１は接続ポートＶａを介して真空装置Ｖと接続される。同様に、セクションＢにおける吸引孔３２のそれぞれは気体が流通する流路３３Ｂと接続され、それぞれの流路３３Ｂは第２流路２に合流され、第２流路２は接続ポートＶａを介して真空装置Ｖと接続される。 Each of the suction holes 32 in section A is connected to a flow path 33A through which gas flows, each flow path 33A is merged with the first flow path 1, and the first flow path 1 is connected to the vacuum device via the connection port Va. Connected to V. Similarly, each of the suction holes 32 in section B is connected to a flow path 33B through which gas flows, each flow path 33B is merged with the second flow path 2, and the second flow path 2 is connected to the second flow path 2 via the connection port Va. Connected to vacuum device V.

また、保持装置Ｈは、第１流路１から分岐して気体が流通する第３流路３と、第２流路２から分岐して気体が流通する第４流路４と、第３流路３と第４流路４とをつなぐ第５流路５とを有する。 The holding device H also includes a third flow path 3 that branches off from the first flow path 1 and through which gas flows, a fourth flow path 4 that branches off from the second flow path 2 and through which gas flows, and a third flow path 4 that branches off from the second flow path 2 and through which gas flows. It has a fifth channel 5 that connects the channel 3 and the fourth channel 4.

第３流路３の終端と第５流路５の一端とは、第１制限部１１を介して接続される。第１制限部１１は、第３流路３から第５流路５へ向かう気体の流れを制限する。第１制限部１１としては、例えば、第５流路５から第３流路３へ向かう気体の流れを許容し第３流路３から第５流路５へ向かう気体の流れを阻止する逆止弁が使用されうる。 The terminal end of the third flow path 3 and one end of the fifth flow path 5 are connected via the first restriction portion 11 . The first restriction portion 11 restricts the flow of gas from the third flow path 3 to the fifth flow path 5 . The first restricting portion 11 may be, for example, a non-return check that allows the flow of gas from the fifth flow path 5 to the third flow path 3 and blocks the flow of gas from the third flow path 3 to the fifth flow path 5. A valve can be used.

第４流路４の終端と第５流路５の他端とは、第２制限部１２を介して接続される。第２制限部１２は、第４流路４から第５流路５へ向かう気体の流れを制限する。第２制限部１２としては、例えば、第５流路５から第４流路４へ向かう気体の流れを許容し第４流路４から第５流路５へ向かう気体の流れを阻止する逆止弁が使用されうる。 The terminal end of the fourth flow path 4 and the other end of the fifth flow path 5 are connected via the second restriction portion 12 . The second restriction part 12 restricts the flow of gas from the fourth flow path 4 to the fifth flow path 5. The second restriction part 12 is, for example, a non-return check that allows the flow of gas from the fifth flow path 5 to the fourth flow path 4 and blocks the flow of gas from the fourth flow path 4 to the fifth flow path 5. A valve can be used.

また、保持装置Ｈは、接続ポートＶａを介して真空装置Ｖと接続される第６流路６を有し、第５流路５と第６流路６とが、第３制限部１３を介して接続される。第３制限部１３は、第５流路５から第６流路６へ向かう気体の流れを制限する。第３制限部１３としては、例えば、第６流路６から第５流路５へ向かう気体の流れを許容し第５流路５から第６流路６へ向かう気体の流れを阻止する逆止弁が使用されうる。 Further, the holding device H has a sixth flow path 6 connected to the vacuum device V via the connection port Va, and the fifth flow path 5 and the sixth flow path 6 are connected to each other via the third restriction part 13. connected. The third restriction part 13 restricts the flow of gas from the fifth flow path 5 to the sixth flow path 6. The third restricting portion 13 may be, for example, a non-return check that allows the flow of gas from the sixth flow path 6 to the fifth flow path 5 and blocks the flow of gas from the fifth flow path 5 to the sixth flow path 6. A valve can be used.

なお、第１制限部１１には、逆止弁のかわりに、第３流路３から第５流路５へ向かう気体の流れを調整するスピードコントローラが使用されてもよい。また、第２制限部１２にも、第４流路４から第５流路５へ向かう気体の流れを調整するスピードコントローラが使用されてもよい。同様に、第３制限部１３にも、第５流路５から第６流路６へ向かう気体の流れを調整するスピードコントローラが使用されてもよい。 Note that a speed controller that adjusts the flow of gas from the third flow path 3 to the fifth flow path 5 may be used in the first restriction portion 11 instead of the check valve. Further, a speed controller that adjusts the flow of gas from the fourth flow path 4 to the fifth flow path 5 may also be used in the second restriction portion 12 . Similarly, a speed controller that adjusts the flow of gas from the fifth flow path 5 to the sixth flow path 6 may be used in the third restriction portion 13 as well.

第５流路５には、第５流路内の圧力または気体流量を計測する計測部８が配置される。計測部８は、第５流路５内の圧力を計測する圧力計であってもよいし、第５流路５内の気体流量を計測する気体流量計であってもよい。計測部８での計測結果は、処理部９に伝送される。処理部９は、ＣＰＵおよびメモリを備えるコンピュータによって構成されうる。なお、処理部９は、露光装置３００における制御部３１０（図３）によって実現されてもよい。 A measurement unit 8 that measures the pressure or gas flow rate in the fifth flow path is arranged in the fifth flow path 5 . The measurement unit 8 may be a pressure gauge that measures the pressure in the fifth channel 5, or may be a gas flow meter that measures the gas flow rate in the fifth channel 5. The measurement results from the measuring section 8 are transmitted to the processing section 9. The processing unit 9 may be configured by a computer including a CPU and memory. Note that the processing section 9 may be realized by the control section 310 (FIG. 3) in the exposure apparatus 300.

第１流路１、第２流路２、第６流路６はそれぞれ、接続ポートＶａに接続される。図１の例において、第１流路１と第２流路２と第６流路６とは合流されたのち、接続ポートＶａに接続されている。この場合、第１流路１と第２流路２と第６流路６との合流は、例えば十字継手を用いて行われうる。 The first flow path 1, the second flow path 2, and the sixth flow path 6 are each connected to the connection port Va. In the example of FIG. 1, the first flow path 1, the second flow path 2, and the sixth flow path 6 are joined together and then connected to the connection port Va. In this case, the first flow path 1, the second flow path 2, and the sixth flow path 6 may be joined using, for example, a cross joint.

接続ポートＶａは、第１流路１、第２流路２、第６流路６を、真空装置Ｖに連通するか大気開放口Ｖｂに連通するかを選択的に切り換え可能な真空開放機構としての切換弁７を含みうる。切換弁７は例えば電磁切換弁でありうるが、その他の切換機構が用いられてもよい。切換弁７の制御は処理部９によって行われうる。複数のリフトピン３０上の基板Ｗの在荷確認を行う際、および、基板Ｗが複数のリフトピン３０上に存在すると判定されている際に、切換弁７は真空装置Ｖ側に切り換えられる。これにより、基板Ｗが不図示の搬送ハンドにより搬出された後、複数のリフトピン３０上に基板Ｗがないと判定されると、切換弁７は大気開放口Ｖｂ側に切り換えられ、第６流路６を介して、計測部８が配置されている第５流路５の真空状態が解除される。 The connection port Va serves as a vacuum release mechanism that can selectively switch between communicating the first flow path 1, the second flow path 2, and the sixth flow path 6 with the vacuum device V or with the atmosphere opening port Vb. A switching valve 7 may be included. The switching valve 7 may be, for example, an electromagnetic switching valve, but other switching mechanisms may also be used. Control of the switching valve 7 can be performed by the processing section 9. When checking the presence of substrates W on the plurality of lift pins 30 and when it is determined that the substrates W are present on the plurality of lift pins 30, the switching valve 7 is switched to the vacuum device V side. As a result, after the substrate W is carried out by a transport hand (not shown), when it is determined that there is no substrate W on the plurality of lift pins 30, the switching valve 7 is switched to the atmosphere opening Vb side, and the sixth flow path 6, the vacuum state of the fifth channel 5 in which the measuring section 8 is disposed is released.

また、第１流路１には、第１流路内に圧力損失を与える第１圧力損失発生部２１が配置される。同様に、第２流路２には、第２流路内に圧力損失を与える第２圧力損失発生部２２が配置される。真空装置Ｖによって第１流路１内の気体吸引が行われている間、第１圧力損失発生部２１で圧力損失が発生することにより、第１圧力損失発生部２１と真空装置Ｖとの間の第１流路１内の圧力は外気圧に対して負圧となる。また、真空装置Ｖによって第２流路２内の気体吸引が行われている間、第２圧力損失発生部２２で圧力損失が発生することにより、第２圧力損失発生部２２と真空装置Ｖとの間の第２流路２内の圧力は外気圧に対して負圧となる。このため、真空装置Ｖによって第１流路１および第２流路２内の気体吸引が行われている間に第６流路６から第３制限部１３を介して計測部８が配置されている第５流路５に気体が流入することを防止できる。もっとも、このときに第６流路６から第５流路５への気体の流入を完全に阻止する必要はなく、計測部８によって検知しえない量、すなわち計測部８の公差範囲（計測誤差範囲）内に相当する量での気体の流入は許容されうる。よって、第１圧力損失発生部２１および第２圧力損失発生部２２での圧力損失量は、真空装置Ｖによる第１流路１内および第２流路２内の気体吸引中に第６流路６から第５流路５へ流入する気体の量が計測部８の公差範囲内に相当する量になるように設定される。 Further, a first pressure loss generating section 21 that provides a pressure loss within the first flow path is arranged in the first flow path 1 . Similarly, the second flow path 2 is provided with a second pressure loss generating section 22 that provides a pressure loss within the second flow path. While the vacuum device V is sucking the gas in the first flow path 1, a pressure loss occurs in the first pressure loss generating section 21, so that a gap between the first pressure loss generating section 21 and the vacuum device V is generated. The pressure inside the first flow path 1 becomes negative pressure with respect to the external pressure. Further, while the vacuum device V sucks gas in the second flow path 2, a pressure loss occurs in the second pressure loss generating section 22, so that the second pressure loss generating section 22 and the vacuum device V The pressure within the second flow path 2 during this period becomes negative pressure with respect to the external pressure. Therefore, while the vacuum device V is sucking the gas in the first flow path 1 and the second flow path 2, the measurement unit 8 is placed from the sixth flow path 6 through the third restriction portion 13. It is possible to prevent gas from flowing into the fifth flow path 5 where the gas is present. However, at this time, it is not necessary to completely block the inflow of gas from the sixth flow path 6 to the fifth flow path 5. An inflow of gas in an amount corresponding to within the range ) is permissible. Therefore, the amount of pressure loss in the first pressure loss generating section 21 and the second pressure loss generating section 22 is equal to The amount of gas flowing into the fifth flow path 5 from the measuring section 8 is set to be within the tolerance range of the measuring section 8.

第１圧力損失発生部２１は、第１流路１におけるリフトピン３０側から真空装置Ｖ側に向かう気体の流れに対して圧力損失を増加させるように配置された絞り弁でありうる。また、第２圧力損失発生部２２は、第２流路２におけるリフトピン３０側から真空装置Ｖ側に向かう気体の流れに対して圧力損失を増加させるように配置された絞り弁でありうる。これらの絞り弁のかわりに、同様の機能を備える落下防止弁が使用されてもよい。 The first pressure loss generating section 21 may be a throttle valve arranged to increase pressure loss with respect to the gas flow from the lift pin 30 side toward the vacuum device V side in the first flow path 1. Further, the second pressure loss generating section 22 may be a throttle valve arranged to increase pressure loss with respect to the gas flow from the lift pin 30 side toward the vacuum device V side in the second flow path 2. In place of these throttle valves, anti-fall valves with similar functionality may be used.

あるいは、第１圧力損失発生部２１および第２圧力損失発生部２２は、圧力損失が増加するように、それぞれ第１流路１の径よりも小さい径の流路および第２流路２の径よりも小さい径の流路によって構成されてもよい。あるいは、第１圧力損失発生部２１および第２圧力損失発生部２２は、それぞれ、所定の圧力損失を発生させるだけの長さを持つ流路によって構成されてもよい。また、そのような流路は迷路状に複数箇所で折り曲げられたラビリンス構造を有するように形成されてもよい。このように、第１圧力損失発生部２１は、真空装置Ｖによる第１流路１内の気体吸引中に第６流路６から第５流路５へ流入する気体の量が計測部８の公差範囲内に相当する量になるような、径および長さを持つ流路を有する構造としてもよい。同様に、第２圧力損失発生部２２は、真空装置Ｖによる第２流路２内の気体吸引中に第６流路６から第５流路５へ流入する気体の量が計測部８の公差範囲内に相当する量になるような、径および長さを持つ流路を有する構造としてもよい。 Alternatively, the first pressure loss generating section 21 and the second pressure loss generating section 22 have a flow path having a diameter smaller than that of the first flow path 1 and a diameter of the second flow path 2, respectively, so that the pressure loss increases. It may also be configured with a flow path having a smaller diameter. Alternatively, the first pressure loss generating section 21 and the second pressure loss generating section 22 may each be constituted by a flow path having a length sufficient to generate a predetermined pressure loss. Moreover, such a flow path may be formed to have a labyrinth structure bent at a plurality of locations in a labyrinth shape. In this way, the first pressure loss generating section 21 is configured such that the amount of gas flowing from the sixth channel 6 to the fifth channel 5 is determined by the measuring section 8 while the vacuum device V sucks gas in the first channel 1. The structure may have a flow path having a diameter and a length corresponding to the amount within the tolerance range. Similarly, the second pressure loss generating section 22 is configured such that the amount of gas flowing from the sixth channel 6 to the fifth channel 5 during suction of gas in the second channel 2 by the vacuum device V is within the tolerance of the measuring section 8. A structure having a flow path having a diameter and a length corresponding to the amount within the range may be used.

基板Ｗを複数のリフトピン３０によって支持する際、基板Ｗの撓み等のために基板Ｗがいずれかのリフトピン３０の載置面３１と接触しない場合がありうる。その場合、基板Ｗと接触していないリフトピン３０の載置面３１に連通されている吸引孔３２から外気が進入しうる。しかし、本実施形態の構成によれば、第１制限部１１、第２制限部１２、第３制限部１３の働きにより、その外気は計測部８が配置されている第５流路５には流入しない。そのため、基板Ｗがいずれかの載置面３１と接触せず、いずれかのリフトピン３０が吸着不良となっても、計測部８は負圧を検知することができ、処理部９は、基板Ｗの在荷確認を正確に行うことができる。 When the substrate W is supported by the plurality of lift pins 30, the substrate W may not come into contact with the mounting surface 31 of any of the lift pins 30 due to bending of the substrate W or the like. In that case, outside air can enter through the suction holes 32 that are in communication with the mounting surface 31 of the lift pins 30 that are not in contact with the substrate W. However, according to the configuration of the present embodiment, due to the functions of the first restriction section 11, the second restriction section 12, and the third restriction section 13, the outside air flows into the fifth flow path 5 where the measurement section 8 is disposed. No inflow. Therefore, even if the substrate W does not come into contact with any of the mounting surfaces 31 and any of the lift pins 30 has a suction failure, the measuring section 8 can detect negative pressure, and the processing section 9 can detect the negative pressure on the substrate W. It is possible to accurately check the availability of items.

また、本実施形態の構成によれば、セクションごとに計測部を設ける必要はなく、１つの計測部で在荷確認を行うことができる。したがって、設置スペースおよびコストの点においても有利である。 Further, according to the configuration of the present embodiment, there is no need to provide a measuring section for each section, and it is possible to check the inventory with one measuring section. Therefore, it is also advantageous in terms of installation space and cost.

ここで、複数のリフトピン３０の載置面３１の全てが基板Ｗと接触し、全てのリフトピン３０で正常に吸着ができた場合を想定する。この場合、セクションＡに関しては、流路３３Ａには外気の進入はないため、流路３３Ａ内の気体は第１流路１を介して真空装置Ｖへ流れ、流路３３Ａ内の圧力は外気圧に対して負圧となる。第１制限部１１は－Ｘ方向への流れは自由流となるよう構成されているため、第５流路５内の流体は、第１制限部１１を通り、第１流路１へと流れうる。 Here, it is assumed that all of the mounting surfaces 31 of the plurality of lift pins 30 are in contact with the substrate W, and all the lift pins 30 are able to suction normally. In this case, regarding section A, since no outside air enters the flow path 33A, the gas in the flow path 33A flows to the vacuum device V via the first flow path 1, and the pressure in the flow path 33A is set to the outside pressure. There is a negative pressure against the Since the first restriction part 11 is configured so that the flow in the -X direction is a free flow, the fluid in the fifth flow path 5 passes through the first restriction part 11 and flows into the first flow path 1. sell.

また、セクションＢに関しては、流路３３Ｂには外気の進入はないため、流路３３Ｂ内の流体は第２流路２を介して真空装置Ｖへ流れ、流路３３Ｂ内の圧力は外気圧に対して負圧となる。第２制限部１２はＸ方向への流れは自由流となるよう構成されているため、第５流路５内の流体は、第２制限部１２を通り、第２流路２へと流れうる。 In addition, regarding section B, since no outside air enters the flow path 33B, the fluid in the flow path 33B flows to the vacuum device V via the second flow path 2, and the pressure in the flow path 33B reaches the outside pressure. On the other hand, the pressure becomes negative. Since the second restriction part 12 is configured so that the flow in the X direction is a free flow, the fluid in the fifth flow path 5 can pass through the second restriction part 12 and flow into the second flow path 2. .

以上より、第５流路５内の圧力は負圧となり、計測部８は負圧を検知し、処理部９は在荷ありと判定することができる。 As described above, the pressure in the fifth flow path 5 becomes negative pressure, the measurement unit 8 detects the negative pressure, and the processing unit 9 can determine that there is stock.

次に、複数のリフトピン３０の載置面３１のうちのいずれかが基板Ｗと接触せず、いずれかのリフトピン３０で吸着不良が発生しその吸引孔３２から外気が進入している状態に想定する。この状態を図４に示す。図４では、セクションＡにおけるリフトピン３０で吸着不良が発生している。この場合、当該リフトピンの吸着孔３２と連通している流路３３Ａに外気が進入するため、第１流路１内の圧力は外気圧と同等の圧力となる。第１制限部１１は、＋Ｘ方向の気体の流れを制限するように構成されているため、進入した外気は第１制限部１１を通って第５流路５へ流れ込むことはない。そのため、進入した外気は、第１圧力損失発生部２１を通過し真空装置Ｖへと流れる。このとき、第１圧力損失発生部２１は進入した外気に対して圧力損失を与えるため、第１圧力損失発生部２１より下流の第１流路１内の圧力は外気圧に対して負圧となる。 Next, assume that one of the mounting surfaces 31 of the plurality of lift pins 30 does not come into contact with the substrate W, a suction failure occurs in one of the lift pins 30, and outside air enters through the suction hole 32. do. This state is shown in FIG. In FIG. 4, a suction failure occurs in the lift pin 30 in section A. In this case, since outside air enters the flow path 33A communicating with the suction hole 32 of the lift pin, the pressure inside the first flow path 1 becomes equal to the outside air pressure. Since the first restriction part 11 is configured to restrict the flow of gas in the +X direction, the entered outside air does not flow into the fifth flow path 5 through the first restriction part 11. Therefore, the outside air that has entered passes through the first pressure loss generating section 21 and flows to the vacuum device V. At this time, the first pressure loss generating section 21 gives a pressure loss to the entering outside air, so the pressure in the first flow path 1 downstream from the first pressure loss generating section 21 becomes negative pressure with respect to the outside air pressure. Become.

一方、流路３３Ｂには、外気の進入はないため、流路３３Ｂ中の気体は第２流路２を通って真空装置Ｖへと流れ、第２流路２内の圧力は外気圧に対して負圧となる。第２制限部１２は、＋Ｘ方向の気体の流れは自由流であるため、第５流路５内の気体は第２流路２へ流れ、第５流路５内の圧力は負圧となる。したがって、計測部８は負圧を検知し、処理部９は在荷ありと判定することができる。 On the other hand, since no outside air enters the flow path 33B, the gas in the flow path 33B flows through the second flow path 2 to the vacuum device V, and the pressure within the second flow path 2 is relative to the outside pressure. The pressure becomes negative. In the second restriction part 12, the gas flow in the +X direction is a free flow, so the gas in the fifth flow path 5 flows to the second flow path 2, and the pressure in the fifth flow path 5 becomes negative pressure. . Therefore, the measuring section 8 can detect negative pressure, and the processing section 9 can determine that there is stock.

次に、複数のリフトピン３０上に基板Ｗが存在しないとき、または、複数のリフトピン３０の載置面３１の全てが基板Ｗと接触しなかった場合を想定する。この状態を図５に示す。この場合、全てのセクションで吸引孔３２が開放されるため、流路３３Ａ、第１流路１、流路３３Ｂ、第２流路２内の圧力は外気圧と同等となる。そのため、第５流路５内の気体は第１流路１および第２流路２へは流れない。このとき、第１圧力損失発生部２１が、進入した外気に対して圧力損失を与えるため、第１圧力損失発生部２１より下流の第１流路１内の圧力は外気圧に対して負圧となる。同様に、第２圧力損失発生部２２が、進入した外気に対して圧力損失を与えるため、第２圧力損失発生部２２より下流の第２流路２内の圧力は外気圧に対して負圧となる。しかし、第３制限部１３は－Ｚ方向の気体の流れを制限するように構成されているため、第５流路５内の気体は第６流路６へは流れず、第５流路５内の圧力は外気圧に近い値となる。したがって、計測部８は外気圧に近い値を検知し、処理部９は在荷なしと判定することができる。 Next, assume that the substrate W is not present on the plurality of lift pins 30, or that all of the mounting surfaces 31 of the plurality of lift pins 30 do not come into contact with the substrate W. This state is shown in FIG. In this case, since the suction holes 32 are opened in all sections, the pressures in the flow path 33A, the first flow path 1, the flow path 33B, and the second flow path 2 are equal to the external pressure. Therefore, the gas in the fifth flow path 5 does not flow to the first flow path 1 and the second flow path 2. At this time, since the first pressure loss generating section 21 gives a pressure loss to the outside air that has entered, the pressure in the first flow path 1 downstream from the first pressure loss generating section 21 is a negative pressure with respect to the outside air pressure. becomes. Similarly, since the second pressure loss generating section 22 gives a pressure loss to the outside air that enters, the pressure in the second flow path 2 downstream from the second pressure loss generating section 22 is a negative pressure with respect to the outside air pressure. becomes. However, since the third restriction part 13 is configured to restrict the flow of gas in the -Z direction, the gas in the fifth flow path 5 does not flow to the sixth flow path 6, and the gas in the fifth flow path 5 The pressure inside is close to the outside pressure. Therefore, the measuring unit 8 can detect a value close to the outside air pressure, and the processing unit 9 can determine that there is no stock.

以上のように、本実施形態によれば、基板がいずれかの吸引孔と接触せずその吸引孔で吸着不良が発生した場合でも、該吸引孔から進入した外気が計測部８へ流入することが防止される。そのため、計測部８はいずれかの吸引孔で吸着不良があっても負圧を検出することができるため、基板が載置されているにもかかわらず在荷なしと誤検知されることを防ぐことができる。 As described above, according to the present embodiment, even if the substrate does not come into contact with any of the suction holes and a suction failure occurs in that suction hole, the outside air that has entered through the suction hole can flow into the measuring section 8. is prevented. Therefore, the measurement unit 8 can detect negative pressure even if there is a suction failure in any of the suction holes, which prevents false detection that there is no board even though the board is placed. be able to.

＜第２実施形態＞
図６は、第２実施形態における保持装置Ｈの構成を示す図である。この構成は、第１実施形態に係る図１と概ね同様の構成であるが、第２実施形態では、第１圧力損失発生部２１と第２圧力損失発生部２２とで、通過する気体に与える圧力損失が異なる点に特徴がある。 <Second embodiment>
FIG. 6 is a diagram showing the configuration of the holding device H in the second embodiment. This configuration is generally the same as that in FIG. 1 according to the first embodiment, but in the second embodiment, the first pressure loss generating section 21 and the second pressure loss generating section 22 give an effect to the passing gas. They are characterized by different pressure losses.

例えば、図７に示すように、セクションＡにおけるリフトピン３０で吸着不良が発生し、外気が進入した場合を想定する。この場合、外気圧をPo、第１圧力損失発生部２１での圧力損失をPa-drop、第２圧力損失発生部２２での圧力損失をPb-dropとすると、検出される圧力PAは、次式により表される。
PA＝Po－Pa-drop＋Pb-drop＋PA-Loss
ただし、PA-Lossは流路内での圧力損失を表している。 For example, as shown in FIG. 7, assume that a suction failure occurs in the lift pin 30 in section A and outside air enters. In this case, if the outside pressure is P o , the pressure loss at the first pressure loss generating section 21 is P a-drop , and the pressure loss at the second pressure loss generating section 22 is P b-drop , then the detected pressure P A is expressed by the following formula.
P A = P o - P a-drop + P b-drop + P A-Loss
However, P A-Loss represents the pressure loss within the flow path.

次に、図８に示すように、セクションＢにおけるリフトピン３０で吸着不良が発生し、外気が進入した場合を想定する。この場合、外気圧をPo、第１圧力損失発生部２１での圧力損失をPa-drop、第２圧力損失発生部２２での圧力損失をPb-dropとすると、検出される圧力PBは、次式により表される。
PB＝Po－Pb-drop＋Pa-drop＋PB-Loss
ただし、PB-Lossは流路内での圧力損失を表している。 Next, as shown in FIG. 8, it is assumed that a suction failure occurs in the lift pin 30 in section B and outside air enters. In this case, if the outside pressure is P o , the pressure loss at the first pressure loss generating section 21 is P a-drop , and the pressure loss at the second pressure loss generating section 22 is P b-drop , then the detected pressure P B is expressed by the following formula.
P B = P o - P b-drop + P a-drop + P B-Loss
However, P B-Loss represents the pressure loss within the flow path.

このように、図６における第１圧力損失発生部２１と第２圧力損失発生部２２とで、通過する気体に与える圧力損失の量が異なるようにしたので、吸着不良が発生したセクションが異なれば検出される圧力値も異なる。そのため、事前に各セクションでの吸着不良時における圧力値を記録しておくことで、吸着不良が発生した際に、吸着不良が発生したセクションを特定することが可能となる。 In this way, the first pressure loss generating section 21 and the second pressure loss generating section 22 in FIG. 6 are made to have different amounts of pressure loss to the passing gas, so that if the section where the adsorption failure occurs is different, The detected pressure values are also different. Therefore, by recording in advance the pressure value at the time of suction failure in each section, when suction failure occurs, it becomes possible to specify the section where suction failure has occurred.

なお、本実施形態では、セクションの数を２とした場合について説明したが、セクションの数が増加しても、各セクションに接続される圧力損失発生部の圧力損失を異なるものにしておけば、吸着不良が発生したセクションを特定することが可能である。そのため、吸着不良が発生したセクションに応じて、リフトピン３０が保持面３０８ａへ基板Ｗを受け渡す際のリフトピン３０の駆動加速度を変更することで、受け渡しの際に生じる基板Ｗの位置ずれを低減するといった対処をとることができる。 In this embodiment, the case where the number of sections is 2 has been described, but even if the number of sections increases, if the pressure loss of the pressure loss generating part connected to each section is made different, It is possible to identify the section where suction failure has occurred. Therefore, by changing the drive acceleration of the lift pins 30 when the lift pins 30 transfer the substrate W to the holding surface 308a depending on the section where the suction failure occurs, the positional shift of the substrate W that occurs during transfer is reduced. You can take measures such as:

＜第３実施形態＞
上述した第１および第２実施形態においては、複数のリフトピン３０によって基板Ｗを支持する際の在荷確認を行う構成を示した。第３実施形態では、チャック３０８の保持面３０８ａ上の基板Ｗの在荷確認を行う構成を示す。図９は、第３実施形態における、チャック３０８の保持面３０８ａの構成例を示す平面図である。保持面３０８ａは、基板Ｗを吸着するための、区分けされた複数の吸着溝８０１を有し、複数の吸着溝８０１それぞれの内部には少なくとも１つの吸引孔３２が連通している。よって本実施形態では、各吸着溝が各吸引部を構成する。 <Third embodiment>
In the first and second embodiments described above, the configuration is shown in which the presence of the substrate W is confirmed when the substrate W is supported by the plurality of lift pins 30. In the third embodiment, a configuration is shown in which the presence of substrates W on the holding surface 308a of the chuck 308 is confirmed. FIG. 9 is a plan view showing a configuration example of the holding surface 308a of the chuck 308 in the third embodiment. The holding surface 308a has a plurality of divided suction grooves 801 for suctioning the substrate W, and at least one suction hole 32 communicates with the inside of each of the plurality of suction grooves 801. Therefore, in this embodiment, each suction groove constitutes each suction part.

図１０は、第３実施形態における保持装置Ｈの構成例を示す図である。リフトピンではなく吸着溝８０１の吸引孔３２が流路３３Ａまたは流路３３Ｂと接続されること以外は、図１と同じ構成である。図１０の例においては、セクションＡ（第１吸引部）およびセクションＢ（第２吸引部）はそれぞれ、複数の吸着溝８０１のうちの１つ以上の吸着溝を含む。セクションＡにおける吸引孔３２は流路３３Ａを介して第１流路１に連通され、セクションＢにおける吸引孔３２は流路３３Ｂを介して第２流路２に連通される。 FIG. 10 is a diagram showing a configuration example of the holding device H in the third embodiment. The structure is the same as that in FIG. 1 except that the suction hole 32 of the suction groove 801 instead of the lift pin is connected to the flow path 33A or the flow path 33B. In the example of FIG. 10, section A (first suction section) and section B (second suction section) each include one or more suction grooves among the plurality of suction grooves 801. The suction holes 32 in section A are communicated with the first flow path 1 via the flow path 33A, and the suction holes 32 in section B are communicated with the second flow path 2 via the flow path 33B.

よって、この構成によっても、第１実施形態と同様に、基板Ｗの在荷確認を正確に行うことができる。もちろん、第２実施形態と同様の構成を適用することも可能である。 Therefore, with this configuration as well, it is possible to accurately check the availability of substrates W, similarly to the first embodiment. Of course, it is also possible to apply a configuration similar to that of the second embodiment.

発明は上記実施形態に制限されるものではなく、発明の精神及び範囲から離脱することなく、様々な変更及び変形が可能である。従って、発明の範囲を公にするために請求項を添付する。 The invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are hereby appended to disclose the scope of the invention.

１：第１流路、２：第２流路、３：第３流路、４：第４流路、５：第５流路、６：第６流路、８：計測部、９：処理部、１１：第１制限部、１２：第２制限部、１３：第３制限部、３０：リフトピン、３０８：チャック（保持部）、３０８ａ：保持面、Ｖ：真空装置、Ｗ：基板 1: first flow path, 2: second flow path, 3: third flow path, 4: fourth flow path, 5: fifth flow path, 6: sixth flow path, 8: measurement section, 9: processing part, 11: first restriction part, 12: second restriction part, 13: third restriction part, 30: lift pin, 308: chuck (holding part), 308a: holding surface, V: vacuum device, W: substrate

Claims (13)

真空吸引によって物体を保持する保持装置であって、
前記物体が載置される保持面の上に形成された第１吸引部および第２吸引部を有する保持部と、
前記第１吸引部と真空源とを接続し気体が流通する第１流路と、
前記第２吸引部と前記真空源とを接続し気体が流通する第２流路と、
前記第１流路から分岐して気体が流通する第３流路と、
前記第２流路から分岐して気体が流通する第４流路と、
第５流路と、
前記真空源と接続して気体が流通する第６流路と、
前記第５流路に配置され、前記第５流路内の圧力または気体流量を計測する計測部と、
前記第３流路と前記第５流路とを接続し、前記第３流路から前記第５流路へ向かう気体の流れを制限する第１制限部と、
前記第４流路と前記第５流路とを接続し、前記第４流路から前記第５流路へ向かう気体の流れを制限する第２制限部と、
前記第５流路と前記第６流路とを接続し、前記第５流路から前記第６流路へ向かう気体の流れを制限する第３制限部と、
を有することを特徴とする保持装置。 A holding device that holds an object by vacuum suction,
a holding part having a first suction part and a second suction part formed on a holding surface on which the object is placed;
a first flow path connecting the first suction section and a vacuum source and through which gas flows;
a second flow path connecting the second suction section and the vacuum source and through which gas flows;
a third flow path branching from the first flow path and through which gas flows;
a fourth flow path branching from the second flow path and through which gas flows;
a fifth flow path;
a sixth flow path connected to the vacuum source and through which gas flows;
a measurement unit that is disposed in the fifth flow path and measures the pressure or gas flow rate in the fifth flow path;
a first restriction part that connects the third flow path and the fifth flow path and restricts the flow of gas from the third flow path to the fifth flow path;
a second restriction part that connects the fourth flow path and the fifth flow path and restricts the flow of gas from the fourth flow path to the fifth flow path;
a third restriction part that connects the fifth flow path and the sixth flow path and restricts the flow of gas from the fifth flow path to the sixth flow path;
A holding device characterized by having: 前記第１流路内に圧力損失を与える第１圧力損失発生部と、
前記第２流路内に圧力損失を与える第２圧力損失発生部と、
を更に有することを特徴とする請求項１に記載の保持装置。 a first pressure loss generating section that provides a pressure loss within the first flow path;
a second pressure loss generating section that provides a pressure loss within the second flow path;
The holding device according to claim 1, further comprising: 前記第１圧力損失発生部による圧力損失量および前記第２圧力損失発生部による圧力損失量は、前記真空源によって前記第１流路および前記第２流路内の気体吸引が行われている間に前記第６流路から前記第５流路へ流入する気体の量が前記計測部の公差範囲内に相当する量になるように設定されている、ことを特徴とする請求項２に記載の保持装置。 The amount of pressure loss due to the first pressure loss generating section and the amount of pressure loss due to the second pressure loss generating section are determined while the vacuum source is sucking gas in the first flow path and the second flow path. The amount of gas flowing into the fifth flow path from the sixth flow path is set to be within a tolerance range of the measuring section. holding device. 前記第１圧力損失発生部は、前記第１流路における前記第１吸引部から前記真空源に向かう気体の流れに対して圧力損失を増加させるように配置された絞り弁であり、
前記第２圧力損失発生部は、前記第２流路における前記第２吸引部から前記真空源に向かう気体の流れに対して圧力損失を増加させるように配置された絞り弁である、
ことを特徴とする請求項２または３に記載の保持装置。 The first pressure loss generating section is a throttle valve arranged to increase pressure loss with respect to the flow of gas from the first suction section toward the vacuum source in the first flow path,
The second pressure loss generating section is a throttle valve arranged to increase pressure loss with respect to the flow of gas from the second suction section toward the vacuum source in the second flow path.
The holding device according to claim 2 or 3, characterized in that: 前記第１圧力損失発生部は、前記第１流路における前記第１吸引部から前記真空源に向かう気体の流れに対して圧力損失を増加させるように配置された落下防止弁であり、
前記第２圧力損失発生部は、前記第２流路における前記第２吸引部から前記真空源に向かう気体の流れに対して圧力損失を増加させるように配置された落下防止弁である、
ことを特徴とする請求項２または３に記載の保持装置。 The first pressure loss generating section is a drop prevention valve arranged to increase pressure loss with respect to the flow of gas from the first suction section toward the vacuum source in the first flow path,
The second pressure loss generating section is a drop prevention valve arranged to increase pressure loss with respect to the flow of gas from the second suction section toward the vacuum source in the second flow path.
The holding device according to claim 2 or 3, characterized in that: 前記第１圧力損失発生部および前記第２圧力損失発生部は、前記真空源によって前記第１流路および前記第２流路内の気体吸引が行われている間に前記第６流路から前記第５流路へ流入する気体の量が前記計測部の公差範囲内に相当する量になるような、径および長さを持つ流路を含む、ことを特徴とする請求項３に記載の保持装置。 The first pressure loss generating section and the second pressure loss generating section are configured to absorb gas from the sixth flow path while the vacuum source is sucking gas in the first flow path and the second flow path. 4. The holding device according to claim 3, further comprising a flow path having a diameter and length such that the amount of gas flowing into the fifth flow path corresponds to an amount within a tolerance range of the measuring section. Device. 前記第１圧力損失発生部によって前記第１流路内に与えられる圧力損失の量と、前記第２圧力損失発生部によって前記第２流路内に与えられる圧力損失の量が異なる、ことを特徴とする請求項２乃至６のいずれか１項に記載の保持装置。 The amount of pressure loss applied to the first flow path by the first pressure loss generation section is different from the amount of pressure loss applied to the second flow path by the second pressure loss generation section. The holding device according to any one of claims 2 to 6. 前記計測部が配置されている前記第５流路の真空状態を解除する真空開放機構を更に有することを特徴とする請求項１乃至７のいずれか１項に記載の保持装置。 The holding device according to any one of claims 1 to 7, further comprising a vacuum release mechanism that releases the vacuum state of the fifth flow path in which the measurement section is disposed. 前記第１制限部は、前記第５流路から前記第３流路へ向かう気体の流れを許容し前記第３流路から前記第５流路へ向かう気体の流れを制限する逆止弁であり、
前記第２制限部は、前記第５流路から前記第４流路へ向かう気体の流れを許容し前記第４流路から前記第５流路へ向かう気体の流れを制限する逆止弁であり、
前記第３制限部は、前記第６流路から前記第５流路へ向かう気体の流れを許容し前記第５流路から前記第６流路へ向かう気体の流れを制限する逆止弁である、
ことを特徴とする請求項１乃至８のいずれか１項に記載の保持装置。 The first restriction part is a check valve that allows the flow of gas from the fifth flow path to the third flow path and restricts the flow of gas from the third flow path to the fifth flow path. ,
The second restriction part is a check valve that allows the flow of gas from the fifth flow path to the fourth flow path and restricts the flow of gas from the fourth flow path to the fifth flow path. ,
The third restriction part is a check valve that allows the flow of gas from the sixth flow path to the fifth flow path and restricts the flow of gas from the fifth flow path to the sixth flow path. ,
The holding device according to any one of claims 1 to 8, characterized in that: 前記第１制限部は、前記第３流路から前記第５流路へ向かう気体の流れを調整するスピードコントローラであり、
前記第２制限部は、前記第４流路から前記第５流路へ向かう気体の流れを調整するスピードコントローラであり、
前記第３制限部は、前記第５流路から前記第６流路へ向かう気体の流れを調整するスピードコントローラである、
ことを特徴とする請求項１乃至８のいずれか１項に記載の保持装置。 The first restriction unit is a speed controller that adjusts the flow of gas from the third flow path to the fifth flow path,
The second restriction unit is a speed controller that adjusts the flow of gas from the fourth flow path to the fifth flow path,
The third restriction unit is a speed controller that adjusts the flow of gas from the fifth flow path to the sixth flow path.
The holding device according to any one of claims 1 to 8, characterized in that: 前記保持面に対して昇降する複数のリフトピンを有し、
前記複数のリフトピンのそれぞれは、前記物体を載置する載置面と、前記載置面に連通された吸引孔とを有し、
前記第１吸引部および前記第２吸引部はそれぞれ、前記複数のリフトピンのうちの１つ以上のリフトピンを含み、
前記第１吸引部における前記吸引孔が前記第１流路に連通され、前記第２吸引部における前記吸引孔が前記第２流路に連通される、
ことを特徴とする請求項１乃至１０のいずれか１項に記載の保持装置。 It has a plurality of lift pins that move up and down with respect to the holding surface,
Each of the plurality of lift pins has a placement surface on which the object is placed, and a suction hole communicating with the placement surface,
The first suction part and the second suction part each include one or more lift pins among the plurality of lift pins,
The suction hole in the first suction part is communicated with the first flow path, and the suction hole in the second suction part is communicated with the second flow path.
The holding device according to any one of claims 1 to 10. 前記保持面は、前記物体を吸着するための複数の吸着溝を有し、前記複数の吸着溝のそれぞれは吸引孔に連通されており、
前記第１吸引部および前記第２吸引部はそれぞれ、前記複数の吸着溝のうちの１つ以上の吸着溝を含み、
前記第１吸引部における前記吸引孔が前記第１流路に連通され、前記第２吸引部における前記吸引孔が前記第２流路に連通される、
ことを特徴とする請求項１乃至１０のいずれか１項に記載の保持装置。 The holding surface has a plurality of suction grooves for suctioning the object, each of the plurality of suction grooves communicating with a suction hole,
The first suction section and the second suction section each include one or more suction grooves among the plurality of suction grooves,
The suction hole in the first suction part is communicated with the first flow path, and the suction hole in the second suction part is communicated with the second flow path.
The holding device according to any one of claims 1 to 10. 基板にパターンを形成するリソグラフィ装置であって、
前記基板を保持する、請求項１乃至１２のいずれか１項に記載の保持装置を有することを特徴とするリソグラフィ装置。 A lithography apparatus for forming a pattern on a substrate, the apparatus comprising:
A lithographic apparatus comprising a holding device according to any one of claims 1 to 12, which holds the substrate.
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JP2003145377A (en) 2001-11-08 2003-05-20 Disco Abrasive Syst Ltd Workpiece holder
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WO2015194255A1 (en) 2014-06-16 2015-12-23 村田機械株式会社 Purge device, purge system, purge method, and control method in purge system

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