JP7394556B2 - 載置台及び基板処理装置 - Google Patents
載置台及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 119
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000003507 refrigerant Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Description
一実施形態に係る基板処理装置1について、図1を用いて説明する。図1は、一実施形態に係る基板処理装置1の一例を示す断面模式図である。基板処理装置1は、チャンバ10を備える。チャンバ10は、その中に内部空間10sを提供する。チャンバ10はチャンバ本体12を含む。チャンバ本体12は、略円筒形状を有する。チャンバ本体12は、例えばアルミニウムから形成される。チャンバ本体12の内壁面上には、耐腐食性を有する膜が設けられている。当該膜は、酸化アルミニウム、酸化イットリウムなどのセラミックスであってよい。
基台18の内部に設けられた第2の流路19aでは、所定の温度に冷却された冷媒を流すことによって基板Wを冷却するが、直径が300mm以上の基板の端部から例えば数mm程度の、基板の最外周の局所的な領域の温度を制御することは難しい。
(条件1)
第1の流路19bは、第1の面20dに載置されるエッジリング25の温度を制御する。また、第1の流路19bは、基板の最外周の温度を制御する。第1の流路19bの配置条件について、図3を参照して説明する。図3は、一実施形態に係る第1の流路19b及び第2の流路19aの構造と配置条件の一例を示す図である。第1の面20dから第1の流路19bまでの垂直距離をhとし、第1の面20dと第2の面20cとの境界面から第1の流路19bまでの水平距離をdとしたとき、d>hの条件1を満たす領域に第1の流路19bを設ける。条件1は、tan-1(h/d)≦45°と置き換えてもよい。
また、第2の領域において基台18内に形成される第2の流路19aの水平方向の幅をw1、第1の領域において基台18内に形成される第1の流路19bの水平方向の幅をw2としたとき、w1>w2であることが好ましい。第1の流路19b及び第2の流路19aを流れる冷媒の流量が一定であって第1の流路19bの高さ方向の長さが第2の流路19aの高さ方向の長さ以下である場合、第1の流路19bの幅が細くなるほど流速が速くなる。この結果、第1の流路19bを通流する冷媒の流速を、第2の流路19aを通流する冷媒の流速よりも上げることができる。これにより、第1の領域の抜熱制御を高め、基板の最外周の温度制御をより精度良く行うことができる。
また、第1の流路19bから第2の流路19aまでの水平距離をd'としたとき、d'>dであることが好ましい。これにより、更に第1の領域の抜熱制御を高め、基板の最外周の温度制御性をより高めることができる。
さらに、熱源として第1の流路19bを設定したときの角度θの条件について、図4を参照しながら説明する。図4は、一実施形態に係る基板端部周辺の基板の最外周と熱源との位置関係の一例を示す図である。熱源としては、第1の流路19bを例に挙げて説明するが、熱源は第1の領域に設けられた第1のヒータ20eであってもよい。また、図4では、説明の便宜のために、熱源となる第1の流路19bを点で示す。
次に、第1の流路19bがある場合と、第1の流路19bがない場合とで基板の設置領域の温度を測定した結果について、図5を参照しながら説明する。図5は、一実施形態に係る第1の流路19bの有無と基板の設置領域の温度の実験結果の一例を示す図である。基板の設置領域の温度とは、基板が第2の面20cに載置されたときの基板の裏面又は基板が載置された第2の面20cの温度である。
14 載置台
16 電極プレート
18 基台
19a 第2の流路
19b 第1の流路
20 静電チャック
20a 電極
20b 第2のヒータ
20c 第2の面
20d 第1の面
20e 第1のヒータ
22 チラーユニット
22a、22b 配管
30 上部電極
32 部材
34 天板
36 支持体
38 ガス供給管
40 ガスソース群
42 バルブ群
44 流量制御器群
46 シールド
48 バッフルプレート
80 制御部
W 基板
Claims (17)
- 基板の外側に位置する第1の面と、基板を載置する第2の面とを有する載置台であって、
前記第1の面に対応して第1の流路が形成され、
前記第1の流路の上面の延長線と、前記第1の流路の上面のうち前記第2の面に近い側の端部と前記第1の面の内端部とを結ぶ線とがなす角度が60°以下である、
載置台。 - 前記第1の面の内端部と前記第2の面の外端部との間では、熱の伝達が可能である、
請求項1に記載の載置台。 - 前記角度は、45°以下である、
請求項1又は2に記載の載置台。 - 前記第2の面に対応して第2の流路が形成され、
前記第2の流路の水平方向の幅をw1、前記第1の流路の水平方向の幅をw2としたとき、w1>w2である、
請求項1~3のいずれか一項に記載の載置台。 - 前記第1の面と前記第2の面との境界面から前記第1の流路までの水平距離をd、前記第1の流路から前記第2の流路までの水平距離をd’としたとき、d’>dである、
請求項4に記載の載置台。 - 前記第1の流路と前記第2の流路とは、前記第1の流路と前記第2の流路とに熱交換媒体を流すことが可能なチラーユニットに並列に接続される、
請求項4又は5に記載の載置台。 - 前記第1の流路と前記第2の流路とは、前記第1の流路と前記第2の流路とに熱交換媒体を流すことが可能なチラーユニットに直列に接続される、
請求項4又は5に記載の載置台。 - 前記第1の面には、基板の周囲に位置するリング部材が設置される、
請求項1~7のいずれか一項に記載の載置台。 - 前記第1の面は、前記リング部材を吸着する静電チャックの外側上面である、
請求項8に記載の載置台。 - 前記第2の面は、基板を吸着する前記静電チャックの内側上面である、
請求項9に記載の載置台。 - 前記静電チャックは、前記第1の面と前記第1の流路との間に前記リング部材の温度を制御する第1のヒータを有する、
請求項9又は10に記載の載置台。 - 前記静電チャックは、前記第2の面と平行に基板の温度を制御する第2のヒータを有する、
請求項9~11のいずれか一項に記載の載置台。 - 前記第1の流路は、基板の端部よりも外側に形成される、
請求項1~12のいずれか一項に記載の載置台。 - プラズマ処理又は熱処理が行われるチャンバと、前記チャンバの内部にて静電チャックに基板を載置する載置台と、を有する基板処理装置であって、
前記載置台は、
基板の外側に位置する第1の面と基板を載置する第2の面とを有し、
前記第1の面に対応して第1の流路が形成され、
前記第1の流路の上面の延長線と、前記第1の流路の上面のうち前記第2の面に近い側の端部と前記第1の面の内端部とを結ぶ線とがなす角度が60°以下である、
基板処理装置。 - 前記第1の面の内端部と前記第2の面の外端部との間では、熱の伝達が可能である、
請求項14に記載の基板処理装置。 - 前記角度は、45°以下である、
請求項14又は15に記載の基板処理装置。 - 前記第2の面に対応して第2の流路が形成され、
前記第1の流路と前記第2の流路とに熱交換媒体を流すことが可能なチラーユニットを有する、
請求項14~16のいずれか一項に記載の基板処理装置。
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JP2019148133A JP7394556B2 (ja) | 2019-08-09 | 2019-08-09 | 載置台及び基板処理装置 |
TW109125278A TW202114024A (zh) | 2019-08-09 | 2020-07-27 | 載置台及基板處理裝置 |
CN202010760245.XA CN112349646A (zh) | 2019-08-09 | 2020-07-31 | 载置台和基板处理装置 |
KR1020200098612A KR20210018145A (ko) | 2019-08-09 | 2020-08-06 | 배치대 및 기판 처리 장치 |
US16/987,674 US20210043433A1 (en) | 2019-08-09 | 2020-08-07 | Placing table and substrate processing apparatus |
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JP2014150104A (ja) | 2013-01-31 | 2014-08-21 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP2016189425A (ja) | 2015-03-30 | 2016-11-04 | 日本特殊陶業株式会社 | セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法 |
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