JP7394060B2 - 赤外線デバイス - Google Patents
赤外線デバイス Download PDFInfo
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- JP7394060B2 JP7394060B2 JP2020533666A JP2020533666A JP7394060B2 JP 7394060 B2 JP7394060 B2 JP 7394060B2 JP 2020533666 A JP2020533666 A JP 2020533666A JP 2020533666 A JP2020533666 A JP 2020533666A JP 7394060 B2 JP7394060 B2 JP 7394060B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
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- 229910052802 copper Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- -1 and a bonding Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- H05B3/34—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs
- H05B3/36—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs heating conductor embedded in insulating material
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- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Description
2 ヒータ
3 誘電体層
4 パッシベーション層
20 誘電体膜における穴
33 誘電体層3における誘電体膜領域
40 第2の半導体基板
45 光透過層
50 ゲッタ材料
55 IR反射性材料
55a / 55b IR反射層
60 シリコン貫通ビア
61 はんだバンプ
62 誘電体
63 導電性材料
70 追加の層
75 下部基板キャップ
80 ASIC
90 パッド
91 ボンドワイヤ
Claims (16)
- 第1のキャビティを含む第1の基板と、
前記第1の基板上に配置される誘電体層と、
前記誘電体層上及び前記第1の基板の反対側に配置される第2の基板であって、第2のキャビティを有する第2の基板と、
前記第2の基板に取り付けられる光透過層と、
IRデバイスが実質的に閉じられるように、前記第1の基板に設けられるさらなる層と
を備えるIR(赤外線)デバイスにおいて、
前記第1のキャビティ内の圧力が前記第2のキャビティ内の圧力と実質的に同じレベルになるように、前記誘電体層を貫通する穴が設けられ、
前記誘電体層の直下及び前記さらなる層の上に形成される反射性材料と、真空を維持するために前記光透過層の下面に配置されるゲッタ材料とをさらに備え、
前記IRデバイスを他の回路に接続するために、少なくとも前記第1の基板の中に配置される半導体貫通ビアをさらに備え、
前記半導体貫通ビアに結合される少なくとも2つのボンディングボールをさらに備え、
前記さらなる層は、前記ボンディングボールの間にキャップとして設けられる、デバイス。 - 前記第1のキャビティ及び前記第2のキャビティは、実質的に同じ圧力レベルの真空を有する、請求項1に記載のデバイス。
- 前記第1のキャビティ及び前記第2のキャビティは、空気よりも低い熱伝導率を有するガスで充填されている、請求項1又は2に記載のデバイス。
- 前記デバイスは、ウエハレベルでパッケージングされており、前記ウエハレベルで構築されたフィルタ、キャップ、レンズのいずれか1つを有する、請求項1~3のいずれか1項に記載のデバイス。
- 前記第1のキャビティ及び前記第2のキャビティの壁は、前記IRデバイスにおける放射又は吸収を向上させるための反射性材料を備える、請求項1~4のいずれか1項に記載のデバイス。
- 前記第1の基板及び前記第2の基板のうちの少なくとも1つが、複数の傾斜した側壁を備え、それぞれが反射性材料を有する、請求項1~5のいずれか1項に記載のデバイス。
- 前記さらなる層は、前記第1の基板の連続層であり、浅い第1のキャビティを提供する、請求項1~6のいずれか1項に記載のデバイス。
- 前記さらなる層は、前記第1のキャビティの幅と比較して同様の幅を有する、請求項1~7のいずれか1項に記載のデバイス。
- 前記赤外線デバイスは、赤外線エミッタ及び赤外線検出器のうちのいずれか1つである、請求項1~8のいずれか1項に記載のデバイス。
- 前記赤外線デバイスは、マイクロマシニングされた熱型赤外線デバイスである、請求項1~9のいずれか1項に記載のデバイス。
- 前記赤外線デバイスは、特定用途向け集積回路(ASIC)上に直接接続される、請求項1~10のいずれか1項に記載のデバイス。
- 前記ASICは、駆動回路、読み出し及び増幅回路、メモリ又は処理セル、状態機械又はマイクロコントローラのいずれかを含む、請求項11に記載のデバイス。
- 前記第1の基板は、前記第2の基板と比較してより大きな幅を有し、前記誘電体層は、前記第1の基板の全幅にわたって延びる、請求項1~12のいずれか1項に記載のデバイス。
- 前記第2の基板の外側の前記誘電体層上に少なくとも1つのボンドパッドをさらに備える、請求項1~13のいずれか1項に記載のデバイス。
- 前記ボンドパッドに接続されるワイヤをさらに備え、前記ワイヤは、別のダイ又は回路に接続されるように構成される、請求項14に記載のデバイス。
- 請求項1~15のいずれか1項に記載の赤外線デバイスを製造する方法であって、
IRデバイスを含むデバイス及びウエハを製造するステップと、
2つのキャビティを有する上部基板及び下部基板を形成するステップであって、一方が前記赤外線デバイスの下にあり他方が前記赤外線デバイスの上にあり、各々が透過層、フィルタ/キャップ/レンズ/ゲッタ層を含むステップと、
ボンディング、接着層、接着剤によって、前記キャビティを真空又は熱伝導率の低いガスでシーリングするステップと、
前記IRデバイスを接続するために、下部基板又は上部基板に半導体貫通ビアを形成するステップと、
はんだバンプ及び/又は3D配線を形成するステップと、
各赤外線デバイスを単体化するステップと
を含む、方法。
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