JP7371494B2 - 磁気記録媒体および磁気記憶装置 - Google Patents
磁気記録媒体および磁気記憶装置 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims description 44
- 229910045601 alloy Inorganic materials 0.000 claims description 35
- 239000000956 alloy Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052758 niobium Inorganic materials 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 115
- 238000000034 method Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 13
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- 229910000599 Cr alloy Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910018979 CoPt Inorganic materials 0.000 description 3
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010702 perfluoropolyether Substances 0.000 description 3
- 229910005335 FePt Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
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- 239000007787 solid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
- G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
- G11B5/70615—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys containing Fe metal or alloys
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
- G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/736—Non-magnetic layer under a soft magnetic layer, e.g. between a substrate and a soft magnetic underlayer [SUL] or a keeper layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73921—Glass or ceramic substrates
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- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Magnetic Record Carriers (AREA)
Description
Fe100-a-b-c-Cua-Sib-Mc
0.1≦a≦5.0
10.0≦b≦20.0
10.0≦c≦25.0
MはNbおよびBから選択される一種以上の元素
で表され、残部が不可避的不純物からなり、抗折力が500MPa以上であるターゲットが開示されている。
(2)前記アモルファスバリア層は、厚さが5nm~30nmの範囲内である、(1)に記載の磁気記録媒体。
(3)前記アモルファスバリア層は、TaWSi合金を含む、(1)または(2)に記載の磁気記録媒体。
(4)(1)~(3)の何れか1項に記載の磁気記録媒体を有する、磁気記憶装置。
図1に、本実施形態の磁気記録媒体の層構成の一例を示す。
以下、本実施形態の磁気記憶装置として、熱アシスト記録方式による磁気記憶装置を説明するが、本実施形態の磁気記憶装置は、熱アシスト記録方式による磁気記憶装置に限定されるものではなく、マイクロ波アシスト記録方式による磁気記憶装置であってもよい。
2.5インチ耐熱ガラス基板上に、膜厚5nmのTi-45at%Al膜(接着層)を形成した後、膜厚60nmの71.1mol%Fe-14.5mol%B-5.8mol%Nb-8.6mol%Si膜(軟磁性下地層)を形成した。次に、膜厚10nmの40mol%Ta-40mol%W-20mol%Si膜(アモルファスバリア層)を形成した。次に、膜厚10nmのCr-30at%Mo膜(第1の中間層)と、膜厚30nmの100at%W膜(第2の中間層;ヒートシンク層)と、膜厚4nmのTiN膜(第3の中間層;熱バリア層)を形成した。次に、基板を600℃に加熱した後、膜厚8nmの(Fe-50%Pt)-30at%C-5mol%BN膜(磁気記録層)を形成した。次に、膜厚3nmのDLC膜(保護層)を形成し、磁気記録媒体を得た。
軟磁性下地層として、それぞれ70.3mol%Fe-13.8mol%B-6.9mol%Nb-9.1mol%Si膜、72.0mol%Fe-15.9mol%B-4.6mol%Nb-7.5mol%Si膜、71.8mol%Fe-14.5mol%B-4.8mol%Nb-8.8mol%Si膜、70.9mol%Fe-12.4mol%B-6.2mol%Nb-10.5mol%Si膜、67mol%Fe-12.5mol%B-7.0mol%Nb-13.5mol%Si膜、71.7mol%Fe-12.9mol%B-5.1mol%Nb-10.3mol%Si膜、70.5mol%Fe-12.0mol%B-5.5mol%Nb-12.0mol%Si膜を形成した以外は、実施例1-1と同様にして、磁気記録媒体を得た。
軟磁性下地層として、それぞれ75.5mol%Fe-8.0mol%B-2.0mol%Nb-14.5mol%Si膜、73.5mol%Fe-6.0mol%B-3.0mol%Nb-17.5mol%Si膜、73.5mol%Fe-9.0mol%B-3.0mol%Nb-14.5mol%Si膜、70.5mol%Fe-17.0mol%B-5.0mol%Nb-7.5mol%Si膜、72.5mol%Fe-17.0mol%B-3.0mol%Nb-7.5mol%Si膜、71.4mol%Fe-18.0mol%B-5.1mol%Nb-5.5mol%Si膜、70.7mol%Fe-18.2mol%B-6.1mol%Nb-5.1mol%Si膜を形成した以外は、実施例1-1と同様にして、磁気記録媒体を得た。
振動試料型磁力計(VSM)を用いて、磁気記録媒体の軟磁性層の抗磁力を測定した。
図3の磁気ヘッドを用いて、磁気記録媒体のSNRおよびOR特性を評価した。具体的には、線記録密度を1600kFCIとし、トラックプロファイルの半値幅が55nmとなるようにレーザーダイオード(LD)のパワーを調整して、磁気記録媒体のSNRおよびOR特性を評価した。
アモルファスバリア層として、それぞれ50mol%Ta-30mol%W-20mol%Si膜、35mol%Ta-35mol%W-30mol%Si膜、40mol%Ta-40mol%W-20mol%Si膜、50mol%Ta-30mol%W-20mol%Si膜、30mol%Ta-50mol%W-20mol%Si膜を形成した以外は、実施例1-4と同様にして、磁気記録媒体を得た。
アモルファスバリア層を形成しなかった以外は、実施例1-4と同様にして、磁気記録媒体を得た。
アモルファスバリア層として、それぞれ95mol%Ta-5mol%B膜、80mol%Ta-20mol%Si膜、10mol%Ta-70mol%W-20mol%Si膜、30mol%Ta-30mol%W-40mol%Si膜、40mol%Ta-40mol%Mo-20mol%Si膜を形成した以外は、実施例1-4と同様にして、磁気記録媒体を得た。
原子間力顕微鏡(AFM)を用いて、磁気記録媒体の算術平均粗さRaを測定した。
2 軟磁性下地層
3 アモルファスバリア層
4 中間層
5 磁気記録層
100 磁気記録媒体
Claims (4)
- 基板上に、軟磁性下地層と、アモルファスバリア層と、磁気記録層をこの順で有し、
前記軟磁性下地層は、Feと、Bと、Siと、Nb、Zr、MoおよびTaからなる群より選択される一種以上の元素とを含み、Bの含有量が12mol%~16mol%の範囲内であり、Siの含有量が5mol%~15mol%の範囲内であり、
前記アモルファスバリア層は、Siと、Wと、Nb、Zr、MoおよびTaからなる群より選択される一種以上の元素とを含み、Siの含有量が10mol%~30mol%の範囲であり、Wの含有量が20mol%~60mol%の範囲内であり、
前記磁気記録層は、L10構造を有する合金を含む、磁気記録媒体。 - 前記アモルファスバリア層は、厚さが5nm~30nmの範囲内である、請求項1に記載の磁気記録媒体。
- 前記アモルファスバリア層は、TaWSi合金を含む、請求項1または2に記載の磁気記録媒体。
- 請求項1~3の何れか1項に記載の磁気記録媒体を有する、磁気記憶装置。
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CN202011388537.1A CN113053422B (zh) | 2019-12-27 | 2020-12-02 | 磁记录介质以及磁存储装置 |
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