JP7360753B2 - 発光ダイオード構造およびその製造方法 - Google Patents
発光ダイオード構造およびその製造方法 Download PDFInfo
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- JP7360753B2 JP7360753B2 JP2022580259A JP2022580259A JP7360753B2 JP 7360753 B2 JP7360753 B2 JP 7360753B2 JP 2022580259 A JP2022580259 A JP 2022580259A JP 2022580259 A JP2022580259 A JP 2022580259A JP 7360753 B2 JP7360753 B2 JP 7360753B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 222
- 239000000463 material Substances 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 86
- 238000002161 passivation Methods 0.000 claims description 52
- 238000002955 isolation Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- -1 argon ions Chemical class 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 371
- 229910002601 GaN Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229920001486 SU-8 photoresist Polymers 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000012811 non-conductive material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- DYZHZLQEGSYGDH-UHFFFAOYSA-N 7-bicyclo[4.2.0]octa-1,3,5-trienyl-[[7,8-bis(ethenyl)-7-bicyclo[4.2.0]octa-1,3,5-trienyl]oxy]silane Chemical compound C1C2=CC=CC=C2C1[SiH2]OC1(C=C)C2=CC=CC=C2C1C=C DYZHZLQEGSYGDH-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
本発明は、出願日が2020年4月9日であり、発明名称が「イオン注入のマイクロLED(Ion-implanted Micro-LED)」である米国仮特許出願第63/007,831号の優先権の利益を主張すると同時に、出願日が2021年2月17日であり、発明名称が「発光ダイオード構造およびその製造方法(LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME)」である米国公式特許出願第17/177,827号の優先権の利益を主張し、その開示内容を参照により全体として本明細書に組み込む。
Claims (20)
- 発光ダイオード構造であって、
基板と、
前記基板上に形成された結合層と、
前記結合層上に形成された第1ドープ半導体層と、
前記第1ドープ半導体層上に形成された多重量子井戸層と、
前記多重量子井戸層上に形成された、イオン注入によって形成された分離材料を含む第2ドープ半導体層と、
前記第2ドープ半導体層上に形成されたパッシベーション層と、
前記パッシベーション層上に形成され、前記パッシベーション層上の第1開口を介して前記第2ドープ半導体層の一部と接触する電極層と、を含む
ことを特徴とする発光ダイオード構造。 - 前記分離材料は、前記第2ドープ半導体層を複数の発光ダイオードメサに分割する
ことを特徴とする請求項1に記載の発光ダイオード構造。 - 前記基板内に形成された駆動回路の、複数の接点をさらに含み、
各接点は隣接する発光ダイオードメサの間のギャップに位置する
ことを特徴とする請求項2に記載の発光ダイオード構造。 - 前記電極層は、前記第1開口および各接点の上方の第2開口を介して、前記第2ドープ半導体層と前記接点とを電気的に接続する
ことを特徴とする請求項3に記載の発光ダイオード構造。 - 前記複数の発光ダイオードメサは、第1発光ダイオードメサと、前記第1発光ダイオードメサに隣接する第2発光ダイオードメサとを含み、
前記第1発光ダイオードメサの下方にある前記多重量子井戸層、前記第1ドープ半導体層および前記結合層は、前記第2発光ダイオードメサの下方にある前記多重量子井戸層、前記第1ドープ半導体層および前記結合層まで水平に延在する
ことを特徴とする請求項2に記載の発光ダイオード構造。 - 前記分離材料は、イオン注入された材料を含む
ことを特徴とする請求項1に記載の発光ダイオード構造。 - 発光ダイオード構造であって、
基板と、前記基板上に形成された複数の発光ダイオードユニットと、を含み、
各発光ダイオードユニットは、
前記基板上に形成された結合層と、
前記結合層上に形成された第1ドープ半導体層と、
前記第1ドープ半導体層上に形成された多重量子井戸層と、
前記多重量子井戸層上に形成された第2ドープ半導体層と、を含み、
前記複数の発光ダイオードユニットは、第1発光ダイオードユニットと、前記第1発光ダイオードユニットに隣接する第2発光ダイオードユニットとを含み、
前記第1発光ダイオードユニットの前記第2ドープ半導体層は、イオン注入された材料によって前記第2発光ダイオードユニットの前記第2ドープ半導体層と電気的に分離される
ことを特徴とする発光ダイオード構造。 - 前記第1発光ダイオードユニットの前記多重量子井戸層、前記第1ドープ半導体層および前記結合層は、前記第2発光ダイオードユニットの前記多重量子井戸層、前記第1ドープ半導体層および前記結合層まで水平に延在する
ことを特徴とする請求項7に記載の発光ダイオード構造。 - 前記イオン注入された材料は、前記第2ドープ半導体層の内部および前記多重量子井戸層の上に形成される
ことを特徴とする請求項8に記載の発光ダイオード構造。 - パッシベーション層および電極層をさらに含み、
前記パッシベーション層は、前記イオン注入された材料により分離される前記複数の発光ダイオードユニットの前記第2ドープ半導体層の上に形成され、
前記電極層は、前記パッシベーション層の上に形成され、各発光ダイオードユニットの前記パッシベーション層における第1開口を介して各発光ダイオードユニットの前記第2ドープ半導体層の一部と接触する
ことを特徴とする請求項7に記載の発光ダイオード構造。 - 前記基板内に形成された駆動回路の、複数の接点をさらに含み、
各接点は隣接する発光ダイオードユニットの間のギャップに位置する
ことを特徴とする請求項10に記載の発光ダイオード構造。 - 前記電極層は、各発光ダイオードユニットの前記第1開口および各接点の上にある第2開口を介して、各発光ダイオードユニットの前記第2ドープ半導体層と各接点とを電気的に接続する
ことを特徴とする請求項11に記載の発光ダイオード構造。 - 前記イオン注入された材料は、水素、ヘリウム、窒素、酸素、フッ素、マグネシウム、シリコンまたはアルゴンのイオンが注入された材料を含む
ことを特徴とする請求項7に記載の発光ダイオード構造。 - 発光ダイオード構造を製造する方法であって、
半導体層を第1基板上に形成することであって、前記半導体層は第1ドープ半導体層と、前記第1ドープ半導体層上の多重量子井戸層と、前記多重量子井戸層上の第2ドープ半導体層とを含むことと、
注入操作を実行して前記第2ドープ半導体層内にイオン注入された材料を形成することと、
第1エッチング操作を実行して、少なくとも、前記イオン注入された材料の一部、前記多重量子井戸層の一部、前記第1ドープ半導体層の一部および結合層の一部を除去することによって、前記第1基板内に形成された駆動回路の接点を露出させることと、
前記第2ドープ半導体層上にパッシベーション層を形成することと、
前記パッシベーション層において第1開口を形成して前記第2ドープ半導体層の一部を露出させ、前記パッシベーション層において第2開口を形成して前記接点を露出させることと、
前記第1開口および前記第2開口を覆うように前記パッシベーション層上に電極層を形成することと、を含む
ことを特徴とする発光ダイオード構造を製造する方法。 - 前記第2ドープ半導体層内に前記イオン注入された材料を形成することは、
注入によって前記第2ドープ半導体層内に前記イオン注入された材料を形成することによって、前記第2ドープ半導体層を複数の発光ダイオードメサに分割することを含み、
各発光ダイオードメサは、前記イオン注入された材料により電気的に分離される
ことを特徴とする請求項14に記載の発光ダイオード構造を製造する方法。 - 前記注入操作を実行して前記第2ドープ半導体層内に前記イオン注入された材料を形成することは、
前記イオン注入された材料が前記第1ドープ半導体層に接触しないようにする注入深さでイオン材料を前記半導体層における所定領域に注入することを含む
ことを特徴とする請求項14に記載の発光ダイオード構造を製造する方法。 - 前記注入操作を実行して前記第2ドープ半導体層内に前記イオン注入された材料を形成することは、
前記イオン注入された材料が前記第1ドープ半導体層および前記多重量子井戸層に接触しないようにする注入深さでイオン材料を前記半導体層における所定領内にイオン材料を注入することを含む
ことを特徴とする請求項14に記載の発光ダイオード構造を製造する方法。 - 前記注入操作は約10keVから約300keVの間のイオン注入電力で実行される
ことを特徴とする請求項16に記載の発光ダイオード構造を製造する方法。 - 前記イオン材料は、水素、ヘリウム、窒素、酸素、フッ素、マグネシウム、シリコンまたはアルゴンのイオンを含む
ことを特徴とする請求項16に記載の発光ダイオード構造を製造する方法。 - 前記第1基板上に前記半導体層を形成することは、
前記第1基板内に駆動回路を形成することと、
第2基板上に前記半導体層を形成することと、
結合層を介して前記半導体層を前記第1基板上に結合することと、
前記第2基板を除去することと、を含む
ことを特徴とする請求項14に記載の発光ダイオード構造を製造する方法。
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