JP7358193B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP7358193B2 JP7358193B2 JP2019195395A JP2019195395A JP7358193B2 JP 7358193 B2 JP7358193 B2 JP 7358193B2 JP 2019195395 A JP2019195395 A JP 2019195395A JP 2019195395 A JP2019195395 A JP 2019195395A JP 7358193 B2 JP7358193 B2 JP 7358193B2
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- Prior art keywords
- wafer
- modified layer
- dividing line
- chip
- triangular
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- 238000003672 processing method Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 10
- 239000010410 layer Substances 0.000 description 55
- 230000003287 optical effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
Description
波長 :1342nm
繰り返し周波数 :90kHz
平均出力 :1.2W
加工送り速度 :700mm/秒
10a:表面
10b:裏面
10c:外縁部
10d:デバイス領域
10e:外周余剰領域
12:デバイス
14:分割予定ライン
16:微小三角形領域
40:レーザー加工装置
42:チャックテーブル
44:吸着チャック
50:研削装置
51:チャックテーブル
52:研削手段
54:ホイールマウント
56:研削ホイール
58:研削砥石
Claims (1)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたデバイス領域と、該デバイス領域を囲繞する外周余剰領域とを備えたウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
ウエーハに対して透過性を有する波長のレーザー光線の集光点を分割予定ラインの内部に位置付けて照射して改質層を形成する改質層形成工程と、
該改質層形成工程の前、又は後にウエーハの表面に保護部材を配設する保護部材配設工程と、
研削装置のチャックテーブルに保護部材側を保持しウエーハの裏面を研削して薄化すると共に分割予定ラインの内部に形成された改質層からウエーハの表面に形成された分割予定ラインに向かって生じるクラックによってウエーハを個々のデバイスチップに分割する裏面研削工程と、
を少なくとも含み、
該改質層形成工程において、外周余剰領域に至る分割予定ライン上にレーザー光線を照射して改質層を形成する場合に、
ウエーハの外周側に該デバイスチップよりも表面積が小さい三角形チップが形成されない場合には、該デバイス領域からウエーハの外周に至る改質層を形成し、
該外周側に該デバイスチップよりも表面積が小さい三角形チップが形成される場合には、該三角形チップが形成される領域においてレーザー光線の照射を停止して改質層を形成しないことにより該三角形チップが形成されないようにするウエーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195395A JP7358193B2 (ja) | 2019-10-28 | 2019-10-28 | ウエーハの加工方法 |
KR1020200123646A KR20210050446A (ko) | 2019-10-28 | 2020-09-24 | 웨이퍼의 가공 방법 |
US17/066,658 US11328956B2 (en) | 2019-10-28 | 2020-10-09 | Wafer processing method |
SG10202010112VA SG10202010112VA (en) | 2019-10-28 | 2020-10-12 | Wafer processing method |
TW109137169A TW202116466A (zh) | 2019-10-28 | 2020-10-27 | 晶圓的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195395A JP7358193B2 (ja) | 2019-10-28 | 2019-10-28 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021068872A JP2021068872A (ja) | 2021-04-30 |
JP7358193B2 true JP7358193B2 (ja) | 2023-10-10 |
Family
ID=75586376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019195395A Active JP7358193B2 (ja) | 2019-10-28 | 2019-10-28 | ウエーハの加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11328956B2 (ja) |
JP (1) | JP7358193B2 (ja) |
KR (1) | KR20210050446A (ja) |
SG (1) | SG10202010112VA (ja) |
TW (1) | TW202116466A (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165229A (ja) | 2012-02-13 | 2013-08-22 | Disco Abrasive Syst Ltd | 光デバイスウェーハの分割方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
ATE518242T1 (de) | 2002-03-12 | 2011-08-15 | Hamamatsu Photonics Kk | Methode zur trennung von substraten |
JP2017107921A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP6904793B2 (ja) * | 2017-06-08 | 2021-07-21 | 株式会社ディスコ | ウエーハ生成装置 |
JP2019033134A (ja) * | 2017-08-04 | 2019-02-28 | 株式会社ディスコ | ウエーハ生成方法 |
JP2020150168A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体装置および半導体装置の製造方法 |
-
2019
- 2019-10-28 JP JP2019195395A patent/JP7358193B2/ja active Active
-
2020
- 2020-09-24 KR KR1020200123646A patent/KR20210050446A/ko unknown
- 2020-10-09 US US17/066,658 patent/US11328956B2/en active Active
- 2020-10-12 SG SG10202010112VA patent/SG10202010112VA/en unknown
- 2020-10-27 TW TW109137169A patent/TW202116466A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165229A (ja) | 2012-02-13 | 2013-08-22 | Disco Abrasive Syst Ltd | 光デバイスウェーハの分割方法 |
Also Published As
Publication number | Publication date |
---|---|
US11328956B2 (en) | 2022-05-10 |
JP2021068872A (ja) | 2021-04-30 |
TW202116466A (zh) | 2021-05-01 |
SG10202010112VA (en) | 2021-05-28 |
KR20210050446A (ko) | 2021-05-07 |
US20210125870A1 (en) | 2021-04-29 |
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