JP7356620B1 - 半導体製造装置用部材 - Google Patents
半導体製造装置用部材 Download PDFInfo
- Publication number
- JP7356620B1 JP7356620B1 JP2023513911A JP2023513911A JP7356620B1 JP 7356620 B1 JP7356620 B1 JP 7356620B1 JP 2023513911 A JP2023513911 A JP 2023513911A JP 2023513911 A JP2023513911 A JP 2023513911A JP 7356620 B1 JP7356620 B1 JP 7356620B1
- Authority
- JP
- Japan
- Prior art keywords
- hole
- insulating sleeve
- base plate
- outer circumferential
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 62
- 239000012790 adhesive layer Substances 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 48
- 239000000853 adhesive Substances 0.000 description 32
- 230000001070 adhesive effect Effects 0.000 description 32
- 239000010410 layer Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 16
- 239000003507 refrigerant Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000011153 ceramic matrix composite Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
上面にウエハ載置面を有し、電極を内蔵するセラミックプレートと、
前記セラミックプレートを上下方向に貫通するセラミックプレート貫通穴と、
前記セラミックプレートの下面側に設けられた導電性のベースプレートと、
前記ベースプレートを上下方向に貫通するベースプレート貫通穴と、
前記ベースプレート貫通穴に挿入されて外周面が前記ベースプレート貫通穴の内周面に接着層を介して接着された絶縁スリーブと、
前記絶縁スリーブを上下方向に貫通し、前記セラミックプレート貫通穴と連通するスリーブ貫通穴と、
を備えた半導体製造装置用部材であって、
前記絶縁スリーブは、前記絶縁スリーブの上端部を除く前記絶縁スリーブの外周面に少なくとも1つの円環状又は螺旋状の外周溝を有する、
ものである。
Claims (6)
- 上面にウエハ載置面を有し、電極を内蔵するセラミックプレートと、
前記セラミックプレートを上下方向に貫通するセラミックプレート貫通穴と、
前記セラミックプレートの下面側に設けられた導電性のベースプレートと、
前記ベースプレートを上下方向に貫通するベースプレート貫通穴と、
前記ベースプレート貫通穴に挿入されて外周面が前記ベースプレート貫通穴の内周面に接着層を介して接着された絶縁スリーブと、
前記絶縁スリーブを上下方向に貫通し、前記セラミックプレート貫通穴と連通するスリーブ貫通穴と、
を備えた半導体製造装置用部材であって、
前記絶縁スリーブは、前記絶縁スリーブの上端部を除く前記絶縁スリーブの外周面に少なくとも1つの円環状又は螺旋状の外周溝を有し、前記外周溝には前記接着層が入り込んでいる、
半導体製造装置用部材。 - 前記外周溝は、円環状の溝であり、前記絶縁スリーブの外周面に複数設けられている、
請求項1に記載の半導体製造装置用部材。 - 前記外周溝の数は、2以上4以下である、
請求項2に記載の半導体製造装置用部材。 - 前記外周溝は、前記絶縁スリーブの下端部には設けられていない、
請求項1~3のいずれか1項に記載の半導体製造装置用部材。 - 前記絶縁スリーブの下端部は、前記絶縁スリーブの下端面から所定高さまでの領域であり、前記所定高さは、前記絶縁スリーブの高さの1/3以上1/2以下である、
請求項4に記載の半導体製造装置用部材。 - 前記絶縁スリーブの上端部は、前記絶縁スリーブの上端面から所定長さまでの領域であり、前記所定長さは、1mm以上3mm以下である、
請求項1~3のいずれか1項に記載の半導体製造装置用部材。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2022/030758 WO2024034127A1 (ja) | 2022-08-12 | 2022-08-12 | 半導体製造装置用部材 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP7356620B1 true JP7356620B1 (ja) | 2023-10-04 |
JPWO2024034127A1 JPWO2024034127A1 (ja) | 2024-02-15 |
JPWO2024034127A5 JPWO2024034127A5 (ja) | 2024-07-17 |
Family
ID=88198239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023513911A Active JP7356620B1 (ja) | 2022-08-12 | 2022-08-12 | 半導体製造装置用部材 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20240055240A1 (ja) |
JP (1) | JP7356620B1 (ja) |
KR (1) | KR20240023224A (ja) |
WO (1) | WO2024034127A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009065133A (ja) * | 2007-07-31 | 2009-03-26 | Applied Materials Inc | プラズマ侵入及びアーキングを減少させた静電チャックを準備するための方法及び装置 |
WO2018216797A1 (ja) * | 2017-05-25 | 2018-11-29 | 日本碍子株式会社 | ウエハ用サセプタ |
WO2020111194A1 (ja) * | 2018-11-30 | 2020-06-04 | 京セラ株式会社 | 試料保持具 |
JP2021132177A (ja) * | 2020-02-21 | 2021-09-09 | 株式会社巴川製紙所 | 静電チャック装置 |
-
2022
- 2022-08-12 KR KR1020237007741A patent/KR20240023224A/ko not_active Application Discontinuation
- 2022-08-12 JP JP2023513911A patent/JP7356620B1/ja active Active
- 2022-08-12 WO PCT/JP2022/030758 patent/WO2024034127A1/ja unknown
-
2023
- 2023-03-01 US US18/176,562 patent/US20240055240A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009065133A (ja) * | 2007-07-31 | 2009-03-26 | Applied Materials Inc | プラズマ侵入及びアーキングを減少させた静電チャックを準備するための方法及び装置 |
WO2018216797A1 (ja) * | 2017-05-25 | 2018-11-29 | 日本碍子株式会社 | ウエハ用サセプタ |
WO2020111194A1 (ja) * | 2018-11-30 | 2020-06-04 | 京セラ株式会社 | 試料保持具 |
JP2021132177A (ja) * | 2020-02-21 | 2021-09-09 | 株式会社巴川製紙所 | 静電チャック装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202407859A (zh) | 2024-02-16 |
WO2024034127A1 (ja) | 2024-02-15 |
KR20240023224A (ko) | 2024-02-20 |
US20240055240A1 (en) | 2024-02-15 |
JPWO2024034127A1 (ja) | 2024-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI727105B (zh) | 半導體製造裝置用元件及其製法 | |
JP7372271B2 (ja) | 半導体製造装置用部材及びその製法 | |
JP7356620B1 (ja) | 半導体製造装置用部材 | |
JP6449802B2 (ja) | 半導体製造用部品 | |
TWI849981B (zh) | 半導體製造裝置用構件 | |
JP2023106929A (ja) | 半導体製造装置用部材 | |
WO2024004040A1 (ja) | ウエハ載置台 | |
WO2024047857A1 (ja) | ウエハ載置台 | |
WO2024047858A1 (ja) | ウエハ載置台 | |
JP2020053707A (ja) | 半導体製造用部品 | |
JP2021057468A (ja) | 保持装置 | |
TWI836924B (zh) | 晶圓載置台 | |
JP7364822B1 (ja) | ウエハ載置台 | |
WO2024100876A1 (ja) | ウエハ載置台 | |
WO2024004039A1 (ja) | ウエハ載置台 | |
WO2023153021A1 (ja) | 半導体製造装置用部材 | |
JP2023096244A (ja) | 半導体製造装置用部材 | |
WO2024121910A1 (ja) | 半導体製造装置用部材 | |
JP7382536B1 (ja) | 半導体製造装置用部材 | |
JP2023149659A (ja) | ウエハ載置台 | |
KR20230051055A (ko) | 웨이퍼 배치대 | |
JP2023056156A (ja) | 半導体製造装置用部材 | |
JP2023101194A (ja) | 半導体製造装置用部材 | |
TW202329320A (zh) | 晶圓載置台 | |
KR20230053499A (ko) | 웨이퍼 배치대 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230228 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230912 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230922 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7356620 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |