JP7339349B2 - 熱制御材料 - Google Patents
熱制御材料 Download PDFInfo
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- JP7339349B2 JP7339349B2 JP2021547100A JP2021547100A JP7339349B2 JP 7339349 B2 JP7339349 B2 JP 7339349B2 JP 2021547100 A JP2021547100 A JP 2021547100A JP 2021547100 A JP2021547100 A JP 2021547100A JP 7339349 B2 JP7339349 B2 JP 7339349B2
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- 239000000463 material Substances 0.000 title claims description 99
- 239000000758 substrate Substances 0.000 claims description 49
- 239000007790 solid phase Substances 0.000 claims description 29
- 230000008859 change Effects 0.000 claims description 27
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 26
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000004038 photonic crystal Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 239000012071 phase Substances 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 229910000756 V alloy Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 229910021476 group 6 element Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- -1 poly(3-hexylthiophene) Polymers 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000012782 phase change material Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000013632 homeostatic process Effects 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011217 control strategy Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/46—Arrangements or adaptations of devices for control of environment or living conditions
- B64G1/50—Arrangements or adaptations of devices for control of environment or living conditions for temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/226—Special coatings for spacecraft
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/46—Arrangements or adaptations of devices for control of environment or living conditions
- B64G1/50—Arrangements or adaptations of devices for control of environment or living conditions for temperature control
- B64G1/503—Radiator panels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/52—Protection, safety or emergency devices; Survival aids
- B64G1/58—Thermal protection, e.g. heat shields
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/30—Metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/32—Photonic crystals
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Remote Sensing (AREA)
- Aviation & Aerospace Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Thermal Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Environmental Sciences (AREA)
- Organic Chemistry (AREA)
- Biodiversity & Conservation Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Combustion & Propulsion (AREA)
- Critical Care (AREA)
- Emergency Medicine (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Optical Filters (AREA)
- Laminated Bodies (AREA)
Description
本出願は、2019年2月22日に出願された米国仮出願第62/809250号の優先権を主張し、その主題は参照によりその全体が本明細書に組み込まれる。
Claims (15)
- システムであって、
温度感受性物体と、
前記温度感受性物体と熱連絡し、かつ温度の関数として変動する放射率を有する熱制御材料と、を備え、前記熱制御材料が、
フォトニック結晶、メタマテリアル、メタ表面、および多層膜のうちの1つを含む第1の表面を備える基板と、
前記第1の表面と接触する固体相変化材料と、
反射性薄膜材料と、
前記固体相変化材料および前記反射性薄膜材料によって境界付けられた光共振器、ここで、前記反射性薄膜材料は、前記光共振器の前記基板と反対側に位置付けられる、とを備える、システム。 - 前記表面が、マイクロコーンのアレイを形成するようにパターン化された基板である、請求項1に記載のシステム。
- 前記固体相変化材料が、二酸化バナジウムおよび二酸化バナジウムと遷移金属との合金のうちの1つである、請求項1に記載のシステム。
- 前記固体相変化材料が、テルル化ゲルマニウムおよびゲルマニウムと別の第6族元素との合金のうちの1つである、請求項1に記載のシステム。
- 前記固体相変化材料が、500ナノメートル未満の厚さを有する層である、請求項1に記載のシステム。
- 前記固体相変化材料が、前記温度感受性物体の所望の動作範囲内の相転移温度を有するように選択される、請求項1に記載のシステム。
- 前記表面および前記固体相変化材料のそれぞれが、前記熱制御材料が1平方メートルあたり150ワット~1平方メートルあたり500ワットの時変熱流束に供されたときに、前記温度感受性物体の温度が20ケルビン未満しか変動しないように構成される、請求項1に記載のシステム。
- 前記温度感受性物体および前記熱制御材料のそれぞれが、宇宙船上に実装され、前記時変熱流束が、太陽照明である、請求項7に記載のシステム。
- 前記固体相変化材料が、前記熱制御材料が第1の放射率を有する誘電状態と、前記熱制御材料が第2の放射率を有する金属状態との間で遷移することができ、前記第2の放射率が、前記第1の放射率よりも少なくとも2倍大きい、請求項1に記載のシステム。
- 対象の波長範囲内で高い放射率を有する熱制御材料を提供するための方法であって、
基板の第1の表面上に、フォトニック結晶、メタマテリアル、メタ表面、および多層膜のうちの1つを製作することと、
固体相変化材料の層を前記基板の前記第1の表面に適用することと、
反射材料の層を位置付け、前記固体相変化材料および前記反射材料によって境界付けられた光共振器を提供すること、ここで、前記反射材料は、前記光共振器の前記基板と反対側にある、とを含む、方法。 - 前記基板中に温度感受性デバイスを少なくとも部分的に封入することをさらに含む、請求項10に記載の方法。
- フォトニック結晶、メタマテリアル、メタ表面、および多層膜のうちの1つを製作することが、前記基板をエッチングすることを含む、請求項10に記載の方法。
- 前記基板の前記エッチングが、マイクロコーンのアレイを提供する、請求項12に記載の方法。
- フォトニック結晶、メタマテリアル、メタ表面、および多層膜のうちの1つを製作することが、前記基板上にリソグラフィでパターン化されたフィーチャおよびリソグラフィで成長したフィーチャのうちの1つを製作することを含む、請求項10に記載の方法。
- リソグラフィでパターン化され、かつリソグラフィで成長したフィーチャのうちの1つが、フォトニックメタマテリアルを提供する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962809250P | 2019-02-22 | 2019-02-22 | |
US62/809,250 | 2019-02-22 | ||
PCT/US2019/055011 WO2020171852A1 (en) | 2019-02-22 | 2019-10-07 | Thermal control material |
Publications (2)
Publication Number | Publication Date |
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JP2022520948A JP2022520948A (ja) | 2022-04-04 |
JP7339349B2 true JP7339349B2 (ja) | 2023-09-05 |
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JP2021547100A Active JP7339349B2 (ja) | 2019-02-22 | 2019-10-07 | 熱制御材料 |
Country Status (6)
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---|---|
US (1) | US11993405B2 (ja) |
EP (1) | EP3927623A1 (ja) |
JP (1) | JP7339349B2 (ja) |
CA (1) | CA3128007C (ja) |
MX (1) | MX2021009998A (ja) |
WO (1) | WO2020171852A1 (ja) |
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CN115257096A (zh) * | 2022-07-26 | 2022-11-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种热辐射抑制叠层结构、其制备方法及应用 |
CN115847946B (zh) * | 2022-11-21 | 2023-07-25 | 哈尔滨工业大学 | 基于铟锑碲的可编程红外热发射调控器及其在热伪装中的应用方法 |
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JP2018193533A (ja) | 2017-05-19 | 2018-12-06 | トヨタ自動車株式会社 | 熱放射構造体 |
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2019
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US20170297750A1 (en) | 2016-04-19 | 2017-10-19 | Palo Alto Research Center Incorporated | Radiative Cooling Panels For Spacecraft |
JP2018193533A (ja) | 2017-05-19 | 2018-12-06 | トヨタ自動車株式会社 | 熱放射構造体 |
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CA3128007A1 (en) | 2020-08-27 |
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