JP7301740B2 - セラミックス回路基板及びその製造方法 - Google Patents
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Description
言い換えると、本発明は、セラミックス基板の少なくとも一方の主面に、接合ろう材を介して金属板が接合されており、前記接合ろう材は金属成分として、Ag93.0~99.4質量部、Cu0.1~5.0質量部、Sn0.5~2.0質量部の合計100質量部に対して、チタン、ジルコニウム、ハフニウム、ニオブから選択される少なくとも1種の活性金属を0.5~4.0質量部含有し、セラミックス基板と金属板との間の接合ろう材層組織中のCuリッチ相の平均サイズが3.5μm以下であり、個数密度が0.015個/μm2以上であることを特徴とするセラミックス回路基板である。
本発明のセラミックス回路基板は、セラミックス基板の少なくとも一方の主面に、接合ろう材を介して金属板が接合されており、前記接合ろう材は金属成分として、Ag93.0~99.4質量部、Cu0.1~5.0質量部、Sn0.5~2.0質量部の合計100質量部に対して、チタン、ジルコニウム、ハフニウム、ニオブから選択される少なくとも1種の活性金属を0.5~4.0質量部含有し、セラミックス基板と金属板との間の接合ろう材層組織中のCuリッチ相の平均サイズが3.5μm以下であり、個数密度が0.015個/μm2以上であることを特徴とするセラミックス回路基板である。
本発明のセラミックス回路基板に使用されるセラミックス基板としては、特に限定されるものではなく、窒化珪素、窒化アルミニウムなどの窒化物系セラミックス、酸化アルミニウム、酸化ジルコニウムなどの酸化物系セラミックス、炭化ケイ素等の炭化物系セラミックス、ほう化ランタン等のほう化物系セラミックス等を使用できる。但し、金属板を活性金属法でセラミックス基板に接合するため、窒化アルミニウム、窒化珪素素等の非酸化物系セラミックスが好適であり、更に、優れた機械強度、破壊靱性の観点より、窒化珪素基板が好ましい。
また、本発明の一実施形態において、セラミックス回路基板の接合ボイド率は、1.0%以下が好ましく、0.8%以下がより好ましく、0.5%以下がさらに好ましい。
さらに、本発明の一実施形態のセラミックス回路基板の、-55℃から150℃のヒートサイクル試験2000サイクルにおけるクラック率は1.0%未満であることが好ましく、0.8%以下であることがより好ましく、0.5%以下であることがさらに好ましい。
本発明のセラミックス回路基板の製造方法は、接合温度855~900℃、保持時間10~60分で接合することを含む。本発明の一実施形態において、セラミックス基板と金属板の接合は、真空中にて855℃~900℃の温度且つ10~60分の時間で接合することが好ましい。接合温度を855℃以上且つ保持時間を10分以上とすることで、金属板からのCuの溶け込みが不足し、セラミックス基板と金属板の接合性が低下するのを抑制することができる。一方、接合温度を900℃以下且つ保持時間を60分以下とすることで、接合時の熱膨張率差に由来する熱ストレスが増加し、セラミックス回路基板の信頼性が低下するのを抑制することができる。
[実施例1]
厚み0.32mmの窒化珪素基板に、Ag粉末(福田金属箔粉工業(株)製:Ag-HWQ 2.5μm)99.0質量部、Cu粉末(福田金属箔粉工業(株)製:Cu-HWQ 3μm)0.5質量部、Sn粉末(福田金属箔粉工業(株)製:Sn-HPN 3μm)0.5質量部の合計100質量部に対して、水素化チタン粉末(トーホーテック(株)製:TCH-100)を3.5質量部含む活性金属ろう材を塗布量8mg/cm2となるようにスクリーン印刷法で塗布した。その後、窒化ケイ素基板の一方の面に回路形成用金属板を、他方の面に放熱板形成用金属板(いずれも厚さ0.8mm、純度99.60%のC1020無酸素銅板)を重ね、890℃且つ20分の条件で接合した。接合した銅板にエッチングレジストを印刷し、塩化第二銅溶液でエッチングして回路パターンを形成した。さらにフッ化アンモニウム/過酸化水素溶液でろう材層、窒化物層を除去した。
超音波探傷装置((株)日立パワーソリューション製:ES5000)で観察されるセラミックス回路基板の接合ボイド率は、接合ボイドの面積を計測し、銅回路パターンの面積で除して算出した。
Ag-Cu―Snろう材層組織中のCuリッチ相は、走査型電子顕微鏡(日本電子JSM-6380)を用いて、セラミックス回路基板の断面の接合界面の任意の位置において反射電子像により、縦60μm×横80μmの視野を、3000倍の倍率で3視野分観察することで評価した。この方法により、粒径0.1μm以上のCuリッチ相が観察できる。観察倍率を、高倍率にしすぎると視野が狭くなり充分な数のCuリッチ相が観察できなくなり、逆に低倍率にしすぎると1μm未満のCuリッチ相を観察できなくなるため、3000倍とした。
前述の方法で得られたSEM像を解析して測定した。画像解析のためのソフトは、MediaCybernetics社製画像処理ソフトImage-Pro Plusを使用した。本発明のAg-Cu―Snろう材層組織中のCuリッチ相は、粒径が0.3μmから数μmまでさまざまであり、走査型電子顕微鏡で観察可能な粒径0.1μm以上のCuリッチ相を対象として、解析を行った。Cuリッチ相の平均サイズは、3視野分観察し、観察された全てのCuリッチ相の重心直径を測定し、その平均値とした。また、Cuリッチ相の個数密度については、画像解析ソフトImage-pro plusを用いてAg-Cu―Snろう材層組織の面積を計測し、以下の式(I)にてCuリッチ相の個数密度を求めた。
Cuリッチ相の個数密度(個/μm2)=Cuリッチ相の個数/Ag-Cu―Snろう材層組織の面積・・・(I)
作製したセラミックス回路基板を-55℃にて15分、25℃にて15分、150℃にて15分、25℃にて15分を1サイクルとする耐ヒートサイクル試験にて、2000サイクル繰り返し試験を行った後、塩化鉄及びフッ化アンモニウム/過酸化水素エッチングで金属板及びろう材層を剥離し、セラミックス基板の表面に発生した水平クラック面積をスキャナーにより600dpi×600dpiの解像度で取り込み、画像解析ソフトGIMP2(閾値140)にて二値化し算出した後、水平クラック面積を算出し、銅回路パターン面積で除して、水平クラック率を求めた。
表1に示す条件としたこと以外は、実施例1と同様に行った。
接合に使用するろう材に、Cu粉末及びSn粉末をしないこと以外、実施例1と同様にしてセラミックス回路基板を得た。
表1に示す条件としたこと以外は、実施例1と同様に行った。
2 金属板
3 Ag-Cu―Snろう材層組織
4 Cuリッチ相
5 接合界面
Claims (2)
- セラミックス基板の少なくとも一方の主面に、接合ろう材を介して金属板が接合されており、前記接合ろう材は金属成分として、Ag93.0~99.4質量部、Cu0.1~5.0質量部、Sn0.5~2.0質量部の合計100質量部に対して、チタン、ジルコニウム、ハフニウム、ニオブから選択される少なくとも1種の活性金属を0.5~4.0質量部含有し、セラミックス基板と金属板との間の接合ろう材層組織中のCuリッチ相の平均サイズが3.5μm以下であり、個数密度が0.015個/μm2以上であることを特徴とするセラミックス回路基板。
- 接合温度855~900℃、保持時間10~60分で接合することを含む、請求項1記載のセラミックス回路基板の製造方法。
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