JP7297148B2 - 金属接合体、半導体装置、導波管及び被接合部材の接合方法 - Google Patents
金属接合体、半導体装置、導波管及び被接合部材の接合方法 Download PDFInfo
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- JP7297148B2 JP7297148B2 JP2022510341A JP2022510341A JP7297148B2 JP 7297148 B2 JP7297148 B2 JP 7297148B2 JP 2022510341 A JP2022510341 A JP 2022510341A JP 2022510341 A JP2022510341 A JP 2022510341A JP 7297148 B2 JP7297148 B2 JP 7297148B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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- B23K20/008—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating pressure combined with radiant energy
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- B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
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Description
実施の形態1の金属接合体及び被接合部材の接合方法について、図1及び図2を用いて説明する。図1は、本実施の形態の金属接合体100を示す断面図である。また、図2は、金属接合体100の製造方法を説明するための断面図である。
実施の形態2の半導体装置及び半導体装置の製造方法について、図3を用いて説明する。図3は、本実施の形態の半導体装置2000を示す断面図である。
実施の形態3の導波管及び導波管の製造方法について、図6から図8を用いて説明する。図6は、本実施の形態の導波管3000を説明するための斜視図、図7は、図6(B)のA-A線における導波管3000の断面図である。また、図8は、本実施の形態の導波管3000の製造方法を説明するための断面図である。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を45秒としためっき処理によって0.3μmのZn膜を形成し、さらにその上に成膜時間を34分としためっき処理によって5μmのAg膜を順次成膜することにより、金属積層体を作製した。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を45秒としためっき処理によって0.3μmのZn膜を形成し、さらにその上に成膜時間を31分としためっき処理によって2μmのAg膜を順次成膜することにより、金属積層体を作製した。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を2分としためっき処理によって1μmのZn膜を形成し、さらにその上に成膜時間を34分としためっき処理によって5μmのAg膜を順次成膜することにより、金属積層体を作製した。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を45秒としためっき処理によって0.3μmのZn膜を形成し、さらにその上に成膜時間を80分としためっき処理によって1μmのAg膜を順次成膜することにより、金属積層体を作製した。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を20秒としためっき処理によって0.1μmのZn膜を形成し、さらにその上に成膜時間を44分としためっき処理によって15μmのAg膜を順次成膜することにより、金属積層体を作製した。
まず、Al合金部材の表面を機械加工によって平坦にした後、その上に成膜時間を45秒としためっき処理によって0.3μmのZn膜を形成し、さらにその上に成膜時間を30分としためっき処理によって0.5μmのAg膜を順次成膜することにより、金属積層体を作製した。
10 金属積層体、
11 金属ベース、12 配線基板、12a、12b 表面導体層、12c 裏面導体層、12d セラミック基材、13 半導体素子、14 接着剤、15 ケース、16 外部端子、17 ワイヤ、18 封止材、
21 Al膜(Al層)、
30a、36a 上部積層体、30b、36b 下部積層体、
31a 上部Al部材(Al層)、31b 下部Al部材(Al層)、
100、200、300、301 金属接合体、
2000 半導体装置、
3000、3001 導波管
Claims (10)
- Ag-Zn-Al合金層と、
前記Ag-Zn-Al合金層の両面に設けられたAl-Ag合金層と、
を備えた金属接合体。 - 前記Ag-Zn-Al合金層は、Alを1atom%以上10atom%以下含有し、Znを1atom%以上40atom%以下含有していること
を特徴とする請求項1に記載の金属接合体。 - 前記Al-Ag合金層は、Agを1atom%以上10atom%以下含有していること
を特徴とする請求項2に記載の金属接合体。 - 金属ベースと、
前記金属ベース上に接合された配線基板と、
前記配線基板の前記金属ベースに接合された面の反対側の面上に接合された半導体素子と、
を備えた半導体装置であって、
前記金属ベースと前記配線基板との間及び前記配線基板と前記半導体素子との間のうち少なくともいずれか一方に請求項1から3のいずれか1項に記載の金属接合体が設けられていること
を特徴とする半導体装置。 - 内部に空洞を有する筒状の導波管であって、
前記導波管の一部の側壁が請求項1から3のいずれか1項に記載の金属接合体によって接合されていること
を特徴とする導波管。 - 前記導波管は、第1部材と第2部材とからなり、前記第1部材と前記第2部材とで囲まれた領域に前記空洞を形成し、
前記第1部材と前記第2部材とが前記金属接合体によって接合されていること
を特徴とする請求項5に記載の導波管。 - 被接合部材としてのAl基材又は被接合部材上に形成されたAl膜のいずれかであるAl層上にZn層が接合して積層され、前記Zn層の前記Al層上に接合された面の反対側の面上にAg層が接合して積層された積層体を用いた金属接合体の製造方法であって、
2個の前記積層体の各々の前記Ag層同士を互いに対向させて接触させる第1工程と、
前記Ag層同士が接触された2個の前記積層体を加圧しながら固相接合可能な温度で加熱する第2工程と、
を含み、
前記Zn層は、厚さが0.1μm以上2μm以下であり、
前記Ag層は、厚さが0.1μm以上50μm以下であること
を特徴とする被接合部材の接合方法。 - 前記Zn層は、Znを99atom%以上含有し、
前記Ag層は、Agを99atom%以上含有していること
を特徴とする請求項7に記載の被接合部材の接合方法。 - 前記第2工程は、大気中で行われること
を特徴とする請求項7又は8に記載の被接合部材の接合方法。 - 前記第2工程では、250℃以上400℃以下の温度で加熱を行うこと
を特徴とする請求項7から9のいずれか1項に記載の被接合部材の接合方法。
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