JP7282494B2 - 基板処理装置および基板処理方法 - Google Patents
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- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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Description
2 基板保持部
3 基板回転機構
4 処理液供給部
5 不活性ガス供給部
9 基板
21 対向板部
22 リフト部
23 チャック部
25 チャック切替機構
51 ガスノズル
91 (基板の)第1主面
92 (基板の)第2主面
93 (基板の)外周端面
94 (基板の)外周縁
211 対向面
215 環状段差部
221 リフトピン
222 リフト支持面
224 リフト案内面
228 排液溝
231,231a,231b チャックピン
232 チャック当接面
C1 基準円
J1 中心軸
S11~S22 ステップ
Claims (10)
- 基板処理装置であって、
基板の第1主面にパターンが形成されており、前記第1主面を下方に向けた状態で前記基板を水平に保持する基板保持部と、
前記基板保持部に保持された前記基板を上下方向を向く中心軸を中心として回転する基板回転機構と、
前記基板の上方を向く第2主面に処理液を供給する処理液供給部と、
を備え、
前記基板保持部が、
前記基板の前記第1主面に対向する対向面を有する対向板部と、
前記対向板部において前記基板の外周縁の下方に配置される複数のリフトピンを有し、前記複数のリフトピンが複数のリフト支持面をそれぞれ有しており、外部の搬送機構との間における前記基板の受け渡しの際に、前記複数のリフト支持面により前記外周縁を下方から支持するリフト部と、
前記対向板部において前記基板の前記外周縁の下方に配置される複数のチャックピンを有し、前記複数のチャックピンが水平方向に移動可能である複数のチャック当接面をそれぞれ有しており、前記複数のチャック当接面が前記リフト部に支持される前記基板の外周端面に当接することにより、前記基板を前記複数のリフト支持面の全てから上方に離間させた状態で、前記基板を保持するチャック部と、
前記チャック部が、前記複数のチャック当接面のうち一部のチャック当接面を前記基板の前記外周端面から離間させつつ、残りのチャック当接面を前記外周端面に当接させた状態で、前記基板を保持可能であり、前記処理液供給部が前記第2主面に前記処理液を供給している間に、前記外周端面から離間させるチャック当接面を切り替えるチャック切替機構と、
を備え、
前記チャック部が前記基板を保持している状態において、前記複数のリフトピンが前記対向面から突出しており、
前記複数のリフト支持面において、前記基板の支持時に前記基板の前記外周縁と当接する位置近傍から周方向に延びる排液溝が形成されることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記複数のリフト支持面が、前記中心軸側に向かって下方に傾斜していることを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置であって、
前記チャック部が前記基板を保持した状態において、前記複数のチャック当接面における前記基板よりも下側の部位の勾配が、前記複数のリフト支持面よりも大きいことを特徴とする基板処理装置。 - 請求項1ないし3のいずれか1つに記載の基板処理装置であって、
前記基板の前記第1主面と前記対向板部との間に、不活性ガスを供給する不活性ガス供給部をさらに備えることを特徴とする基板処理装置。 - 請求項4に記載の基板処理装置であって、
前記不活性ガス供給部が、前記対向板部の中央部に配置されたガスノズルを備え、
前記対向面が、前記基板の前記外周縁の近傍にて前記外周縁に沿って形成される環状段差部を備え、
前記環状段差部の内側における前記対向面と前記基板との間の距離が、前記環状段差部の外側における前記対向面と前記基板との間の距離よりも大きいことを特徴とする基板処理装置。 - 請求項5に記載の基板処理装置であって、
前記対向面において、前記環状段差部が、前記中心軸を中心とする所定の基準円に沿って形成されており、
少なくとも前記複数のチャックピンが前記基準円に重なり、
前記基準円が前記複数のチャックピンと重なる位置において、前記環状段差部が、前記複数のチャックピンよりも前記中心軸側に設けられることを特徴とする基板処理装置。 - 請求項1ないし6のいずれか1つに記載の基板処理装置であって、
前記複数のリフトピンが、前記複数のリフト支持面に対して前記中心軸とは反対側に連続するとともに、前記複数のリフト支持面よりも勾配が大きい複数のリフト案内面をそれぞれ有し、
前記外部の搬送機構との間における前記基板の受け渡しの際に、前記複数のリフト案内面が、前記基板の前記外周端面と当接することにより、前記基板の中心が前記中心軸に近づけられることを特徴とする基板処理装置。 - 請求項7に記載の基板処理装置であって、
前記複数のリフトピンが、周方向に等間隔に配置される4以上のリフトピンを含むことを特徴とする基板処理装置。 - 請求項1ないし8のいずれか1つに記載の基板処理装置であって、
前記基板の前記外周縁は、前記基板のベベル部であることを特徴とする基板処理装置。 - 基板処理装置における基板処理方法であって、
前記基板処理装置が、
基板の第1主面にパターンが形成されており、前記第1主面を下方に向けた状態で前記基板を水平に保持する基板保持部と、
前記基板保持部に保持された前記基板を上下方向を向く中心軸を中心として回転する基板回転機構と、
前記基板の上方を向く第2主面に処理液を供給する処理液供給部と、
を備え、
前記基板保持部が、
前記基板の前記第1主面に対向する対向面を有する対向板部と、
前記対向板部において前記基板の外周縁の下方に配置される複数のリフトピンを有し、前記複数のリフトピンが複数のリフト支持面をそれぞれ有しており、外部の搬送機構との間における前記基板の受け渡しの際に、前記複数のリフト支持面により前記外周縁を下方から支持するリフト部と、
前記対向板部において前記基板の前記外周縁の下方に配置される複数のチャックピンを有し、前記複数のチャックピンが水平方向に移動可能である複数のチャック当接面をそれぞれ有しており、前記リフト部に支持される前記基板の外周端面に対して、前記複数のチャック当接面を当接させることにより、前記基板を前記複数のリフト支持面の全てから上方に離間させた状態で、前記基板を保持するチャック部と、
を備え、
前記チャック部が、前記複数のチャック当接面のうち一部のチャック当接面を前記基板の前記外周端面から離間させつつ、残りのチャック当接面を前記外周端面に当接させた状態で、前記基板を保持可能であり、
前記チャック部が前記基板を保持している状態において、前記複数のリフトピンが前記対向面から突出しており、
前記複数のリフト支持面において、前記基板の支持時に前記基板の前記外周縁と当接する位置近傍から周方向に延びる排液溝が形成され、
前記基板処理方法が、
a)前記基板回転機構により前記基板を回転しつつ、前記処理液供給部により前記第2主面に前記処理液を供給する工程と、
b)前記a)工程に並行して、前記外周端面から離間させるチャック当接面を切り替える工程と、
を備えることを特徴とする基板処理方法。
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JP2018173832A JP7282494B2 (ja) | 2018-09-18 | 2018-09-18 | 基板処理装置および基板処理方法 |
KR1020190081994A KR102246168B1 (ko) | 2018-09-18 | 2019-07-08 | 기판 처리 장치 및 기판 처리 방법 |
TW108124312A TWI693672B (zh) | 2018-09-18 | 2019-07-10 | 基板處理裝置以及基板處理方法 |
CN201910688477.6A CN110911267A (zh) | 2018-09-18 | 2019-07-29 | 基板处理装置以及基板处理方法 |
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JP2022086362A (ja) | 2020-11-30 | 2022-06-09 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
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TWI693672B (zh) | 2020-05-11 |
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