JP7278301B2 - パターン形成された表面を有するスーパーストレートを備える半導体発光デバイス - Google Patents
パターン形成された表面を有するスーパーストレートを備える半導体発光デバイス Download PDFInfo
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- JP7278301B2 JP7278301B2 JP2020552264A JP2020552264A JP7278301B2 JP 7278301 B2 JP7278301 B2 JP 7278301B2 JP 2020552264 A JP2020552264 A JP 2020552264A JP 2020552264 A JP2020552264 A JP 2020552264A JP 7278301 B2 JP7278301 B2 JP 7278301B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
Claims (9)
- 発光ダイオード(LED)チップと、
前記LEDチップ上のレシピエント発光媒体と、
前記LEDチップと反対側の、前記レシピエント発光媒体上のパターン形成されたスーパーストレートと
を備える半導体発光デバイスであって、前記パターン形成されたスーパーストレートは、前記レシピエント発光媒体との境界面を形成するパターン形成された表面であって、連続する透明の材料に沿って形成された複数の光学要素を伴う、前記パターン形成された表面を有し、前記境界面は、前記LEDチップの光軸からはずれた角度の関数としての、前記半導体発光デバイスによって放出される光の色点の変動を低減するよう構成される、半導体発光デバイス。 - 前記複数の光学要素は、前記連続する透明の材料に沿って0.5μmから10μmの範囲のピッチで配置されている、請求項1に記載の半導体発光デバイス。
- 前記複数の光学要素は、前記LEDチップに向かって後方に向けられる光の量を低減する、請求項1に記載の半導体発光デバイス。
- 前記複数の光学要素のうちの少なくとも1つは凸状の突起又は凹状のへこみを含む、請求項1に記載の半導体発光デバイス。
- 前記複数の光学要素のうちの少なくとも1つは円形の断面又は多角形の断面を有する、請求項1に記載の半導体発光デバイス。
- 前記パターン形成された表面は、第1のパターン形成された表面であり、
前記パターン形成されたスーパーストレートは、前記パターン形成されたスーパーストレートの前記第1のパターン形成された表面と反対の側面上に、第2のパターン形成された表面を有し、且つ
前記複数の光学要素は、前記第1のパターン形成された表面上の第1の光学要素、及び前記第2のパターン形成された表面上の第2の光学要素を含む、
請求項1に記載の半導体発光デバイス。 - 前記パターン形成されたスーパーストレートは、第1のパターン形成されたスーパーストレートを含み、且つ
前記半導体発光デバイスはさらに、前記第1のパターン形成されたスーパーストレート上に第2のスーパーストレートを備える、
請求項1に記載の半導体発光デバイス。 - 前記第1のパターン形成されたスーパーストレートは、複数の第1の光学要素を有し、且つ
前記第2のスーパーストレートは、複数の第2の光学要素を有する第2のパターン形成されたスーパーストレートを含む、
請求項7に記載の半導体発光デバイス。 - 前記パターン形成された表面は、前記LEDチップを通って延びる、前記LEDチップの主面に垂直な光軸から40度以内のほぼすべての視角に対して、前記半導体発光デバイスによって放出される前記光のccx及びccy座標の両方の前記変動を0.01以内に低減するよう構成される、請求項1に記載の半導体発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862661359P | 2018-04-23 | 2018-04-23 | |
US62/661,359 | 2018-04-23 | ||
PCT/US2019/028502 WO2019209708A1 (en) | 2018-04-23 | 2019-04-22 | Semiconductor light emitting devices including superstrates with patterned surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021520064A JP2021520064A (ja) | 2021-08-12 |
JP7278301B2 true JP7278301B2 (ja) | 2023-05-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2020552264A Active JP7278301B2 (ja) | 2018-04-23 | 2019-04-22 | パターン形成された表面を有するスーパーストレートを備える半導体発光デバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US11309462B2 (ja) |
EP (1) | EP3785307A1 (ja) |
JP (1) | JP7278301B2 (ja) |
CN (1) | CN112005390A (ja) |
WO (1) | WO2019209708A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6912728B2 (ja) * | 2018-03-06 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及び光源装置 |
US11688832B2 (en) | 2020-04-16 | 2023-06-27 | Creeled, Inc. | Light-altering material arrangements for light-emitting devices |
US11367810B2 (en) | 2020-08-14 | 2022-06-21 | Creeled, Inc. | Light-altering particle arrangements for light-emitting devices |
US11705542B2 (en) | 2020-08-25 | 2023-07-18 | Creeled, Inc. | Binder materials for light-emitting devices |
US20220165923A1 (en) | 2020-11-24 | 2022-05-26 | Creeled, Inc. | Cover structure arrangements for light emitting diode packages |
US11791441B2 (en) | 2020-12-16 | 2023-10-17 | Creeled, Inc. | Support structures for light emitting diode packages |
DE102021119003A1 (de) * | 2021-07-22 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterelement und optoelektronisches bauelement |
US20240234642A1 (en) | 2023-01-05 | 2024-07-11 | Creeled, Inc. | Sidewall arrangements for light-emitting diode devices and related methods |
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-
2019
- 2019-04-22 WO PCT/US2019/028502 patent/WO2019209708A1/en unknown
- 2019-04-22 EP EP19726227.2A patent/EP3785307A1/en active Pending
- 2019-04-22 JP JP2020552264A patent/JP7278301B2/ja active Active
- 2019-04-22 CN CN201980027658.2A patent/CN112005390A/zh active Pending
- 2019-04-22 US US16/390,714 patent/US11309462B2/en active Active
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JP2004362887A (ja) | 2003-06-03 | 2004-12-24 | Yamaha Livingtec Corp | 照明装置 |
JP2007059378A (ja) | 2005-07-25 | 2007-03-08 | Toyoda Gosei Co Ltd | 光源装置 |
US20080042546A1 (en) | 2006-08-16 | 2008-02-21 | Industrial Technology Research Institute | Light-Emitting Device |
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Also Published As
Publication number | Publication date |
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US20190326484A1 (en) | 2019-10-24 |
CN112005390A (zh) | 2020-11-27 |
US11309462B2 (en) | 2022-04-19 |
WO2019209708A1 (en) | 2019-10-31 |
JP2021520064A (ja) | 2021-08-12 |
EP3785307A1 (en) | 2021-03-03 |
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