JP7277609B2 - ガス流システム - Google Patents
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- JP7277609B2 JP7277609B2 JP2021562889A JP2021562889A JP7277609B2 JP 7277609 B2 JP7277609 B2 JP 7277609B2 JP 2021562889 A JP2021562889 A JP 2021562889A JP 2021562889 A JP2021562889 A JP 2021562889A JP 7277609 B2 JP7277609 B2 JP 7277609B2
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- C23C14/228—Gas flow assisted PVD deposition
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- H01J37/32431—Constructional details of the reactor
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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Description
Claims (19)
- ガス流源に流体的に結合可能な1つまたは複数のガス入口と、
1つまたは複数のガス出口と、
前記1つまたは複数のガス入口および前記1つまたは複数のガス出口に流体的に結合されたガス流領域と、
前記1つまたは複数のガス出口に流体的に結合された低圧領域と、
第1の板と第2の板との間の間隙を介して前記ガス流領域に流体的に結合された高圧領域であって、前記第1の板が、前記ガス流領域を前記高圧領域から分離している、高圧領域と、
前記高圧領域に流体的に結合されたL字経路と、
前記L字経路に流体的に結合された送り管と、
前記送り管に流体的に結合された圧力ゲージとを備え、前記圧力ゲージが、前記高圧領域の圧力を測定するように構成されている、
ガス流システム。 - 前記間隙が、前記第1の板の底端と前記第2の板の頂面との間に形成され、前記第2の板が、前記高圧領域を前記低圧領域から分離している、請求項1に記載のガス流システム。
- 前記1つまたは複数のガス入口を介して前記ガス流領域に流体的に結合された前記ガス流源と、
前記低圧領域に流体的に結合された真空ポンプとをさらに備え、前記真空ポンプが、前記低圧領域で低圧を維持するように構成されている、
請求項1に記載のガス流システム。 - 前記ガス流源からのガスの流量および前記真空ポンプが、前記高圧領域と前記低圧領域との間で圧力勾配を維持するように制御されている、請求項3に記載のガス流システム。
- 前記ガス流源によって供給されるプロセスガスが、アルゴンガス(Ar)を含む、請求項3に記載のガス流システム。
- 前記ガス流源によって供給されるプロセスガスが、窒素ガス(N 2 )または酸素ガス(O 2 )を含む、請求項3に記載のガス流システム。
- 前記第2の板に開孔が配置され、前記第2の板が、前記高圧領域を前記低圧領域から分離する上部パネルであり、前記開孔が、前記低圧領域および前記高圧領域を流体的に結合している、請求項1に記載のガス流システム。
- ガス流システムであって、
ガス流源、
前記ガス流源に流体的に結合された1つまたは複数のガス入口、
1つまたは複数のガス出口、
前記1つまたは複数のガス入口および前記1つまたは複数のガス出口に流体的に結合されたガス流領域、
前記1つまたは複数のガス出口に流体的に結合された低圧領域、ならびに
第1の板と第2の板との間の間隙を介して前記ガス流領域に流体的に結合された高圧領域を備え、前記第1の板が、前記ガス流領域を前記高圧領域から分離している、ガス流システムと、
前記高圧領域に流体的に結合されたL字経路と、
前記L字経路に流体的に結合された送り管と、
前記送り管に流体的に結合された圧力ゲージであって、前記高圧領域の圧力を測定するように構成されている、圧力ゲージと、
前記低圧領域に配置された可動基板支持体であって、運動経路に沿って動くように構成されている、可動基板支持体と
を備える処理システム。 - 前記ガス流システムが、前記低圧領域に流体的に結合された真空ポンプをさらに備え、前記真空ポンプが、前記低圧領域で低圧を維持するように構成されている、請求項8に記載の処理システム。
- 前記ガス流源からのガスの流量および前記真空ポンプの動作が、前記高圧領域と前記低圧領域との間で圧力勾配を維持するように制御されている、請求項9に記載の処理システム。
- 前記可動基板支持体が、
支持構造であって、
基板支持体表面、
前記基板支持体表面を取り囲むリング、および
ハローを備える支持構造と、
前記支持構造に接続されたロボットアームと、
前記ロボットアームに接続されたロボットアクチュエータとを備え、前記ロボットアクチュエータが、前記ロボットアームおよび前記基板支持体表面を前記運動経路に沿って動かすように構成されている、請求項8に記載の処理システム。 - 前記間隙が、前記第1の板の底端と前記第2の板の頂面との間に形成され、前記第2の板が、前記高圧領域を前記低圧領域から分離している、請求項8に記載の処理システム。
- 前記可動基板支持体の一部分が、前記運動経路のいずれの部分に沿っても、前記ガス入口のうちの少なくとも1つまたは前記ガス出口のうちの少なくとも1つを覆わない、請求項8に記載の処理システム。
- ガス流システムであって、
ガス流源、
前記ガス流源に流体的に結合された1つまたは複数のガス入口、
1つまたは複数のガス出口、
前記1つまたは複数のガス入口および前記1つまたは複数のガス出口に流体的に結合されたガス流領域、
前記1つまたは複数のガス出口に流体的に結合された低圧領域、
間隙を介して前記ガス流領域に流体的に結合された高圧領域、
前記高圧領域に流体的に結合されたL字経路、
前記L字経路に流体的に結合された送り管、ならびに
前記送り管に流体的に結合された圧力ゲージであって、前記高圧領域の圧力を測定するように構成されている、圧力ゲージを備えるガス流システムと、
可動基板支持体であって、
支持構造であり、
基板支持体表面、
前記基板支持体表面を取り囲むリング、および
ハローを備える支持構造、
前記支持構造に接続されたロボットアーム、ならびに
前記ロボットアームに接続されたロボットアクチュエータを備え、前記ロボットアクチュエータが、前記ロボットアームおよび前記基板支持体表面を運動経路に沿って動かすように構成されている、可動基板支持体と、
開孔が貫通する上部パネルであって、前記高圧領域を前記低圧領域から分離し、前記開孔が、前記高圧領域を前記低圧領域に流体的に結合し、前記間隙が、前記上部パネルと側板との間に形成され、前記側板が、前記ガス流領域を前記高圧領域から分離している、上部パネルと、
1つまたは複数のチャンバ壁と、
チャンバ底部とを備え、内部体積が、前記上部パネル、1つまたは複数のチャンバ壁、および前記チャンバ底部によって少なくとも部分的に囲まれ、前記可動基板支持体が前記内部体積内に配置され、前記内部体積が前記低圧領域を収容している、
処理チャンバ。 - 前記間隙が、前記側板の底端と前記上部パネルの頂面との間に形成されている、請求項14に記載の処理チャンバ。
- 前記ガス流システムが、前記低圧領域に流体的に結合された真空ポンプをさらに備え、前記真空ポンプが、前記低圧領域で低圧を維持するように構成されている、請求項14に記載の処理チャンバ。
- 前記ガス流源からのガスの流量および前記真空ポンプの動作が、前記高圧領域と前記低圧領域との間で圧力勾配を維持するように制御されている、請求項16に記載の処理チャンバ。
- 前記可動基板支持体の一部分が、前記運動経路のいずれの部分に沿っても、前記ガス入口のうちの少なくとも1つまたは前記ガス出口のうちの少なくとも1つを覆わない、請求項14に記載の処理チャンバ。
- 前記運動経路がほぼ直線である、請求項14に記載の処理チャンバ。
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US201962836866P | 2019-04-22 | 2019-04-22 | |
US62/836,866 | 2019-04-22 | ||
PCT/US2020/026468 WO2020219253A1 (en) | 2019-04-22 | 2020-04-02 | Gas flow system |
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JP2017036494A (ja) | 2013-04-10 | 2017-02-16 | キヤノンアネルバ株式会社 | スパッタリング装置 |
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JP3868020B2 (ja) * | 1995-11-13 | 2007-01-17 | キヤノンアネルバ株式会社 | 遠距離スパッタ装置及び遠距離スパッタ方法 |
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- 2020-04-02 WO PCT/US2020/026468 patent/WO2020219253A1/en active Application Filing
- 2020-04-02 KR KR1020217037739A patent/KR20210144932A/ko not_active Application Discontinuation
- 2020-04-02 US US16/838,987 patent/US11211230B2/en active Active
- 2020-04-02 JP JP2021562889A patent/JP7277609B2/ja active Active
- 2020-04-07 TW TW109111568A patent/TW202108801A/zh unknown
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JP2012136756A (ja) | 2010-12-27 | 2012-07-19 | Canon Anelva Corp | スパッタリング方法 |
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US11211230B2 (en) | 2021-12-28 |
WO2020219253A1 (en) | 2020-10-29 |
JP2022529821A (ja) | 2022-06-24 |
US20200335310A1 (en) | 2020-10-22 |
TW202108801A (zh) | 2021-03-01 |
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