JP7241923B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP7241923B2 JP7241923B2 JP2021569645A JP2021569645A JP7241923B2 JP 7241923 B2 JP7241923 B2 JP 7241923B2 JP 2021569645 A JP2021569645 A JP 2021569645A JP 2021569645 A JP2021569645 A JP 2021569645A JP 7241923 B2 JP7241923 B2 JP 7241923B2
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Description
実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置100の断面図である。
次に、実施の形態1の変形例について説明する。図9は、実施の形態1の変形例1における樹脂モールド工程を示す断面図である。図10は、実施の形態1の変形例2における樹脂モールド工程を示す断面図である。図11は、実施の形態1の変形例3におけるリードカットおよび端子曲げ工程を示す断面図である。
次に、実施の形態2に係る半導体装置100Aについて説明する。図12は、実施の形態2に係る半導体装置100Aの断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置100Bについて説明する。図13は、実施の形態3に係る半導体装置100Bの断面図である。図14は、実施の形態3に係る半導体装置100Bにおいて冷媒ジャケット20を組み付ける前の状態を示す底面図である。図15は、実施の形態3に係る半導体装置100Bが備える冷媒ジャケット20の平面図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態4に係る半導体装置について説明する。図16は、実施の形態4に係る半導体装置において冷媒ジャケット20を組み付ける前の状態を示す断面図である。なお、実施の形態4において、実施の形態1~3で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態5に係る半導体装置100Cについて説明する。図17は、実施の形態5に係る半導体装置100Cにおいて冷媒ジャケット20を組み付ける前の状態を示す断面図である。図18は、実施の形態5に係る半導体装置100Cの断面図である。なお、実施の形態5において、実施の形態1~4で説明したものと同一の構成要素については同一符号を付して説明は省略する。
実施の形態3~5では、トランスファーモールド型の半導体装置が冷媒ジャケット20を備える場合について説明したが、これに限定されることなく、ケース型の半導体装置が冷媒ジャケット20を備えていてもよい。この場合も、実施の形態3~5の場合と同様の効果が得られる。
Claims (10)
- 下面に複数のピンフィンを有するベース板と、
前記ベース板の上側に搭載された半導体素子と、
少なくとも前記半導体素子の側面を覆う樹脂部材と、を備え、
前記樹脂部材は前記ベース板の側面を覆うリブを有し、
前記リブの下端は、複数の前記ピンフィンの下端よりも下方に位置し、
前記樹脂部材は、さらに前記半導体素子を封止するモールド樹脂である、半導体装置。 - 前記樹脂部材は樹脂ケースであり、
前記半導体装置は、前記樹脂ケース内に充填され、前記半導体素子を封止する封止樹脂をさらに備えた、請求項1に記載の半導体装置。 - 下面に複数のピンフィンを有するベース板と、
前記ベース板の上側に搭載された半導体素子と、
少なくとも前記半導体素子の側面を覆う樹脂部材と、を備え、
前記樹脂部材は前記ベース板の側面を覆うリブを有し、
前記リブの下端は、複数の前記ピンフィンの下端よりも下方に位置し、
前記リブおよび複数の前記ピンフィンの下端に固定され、前記ベース板との間に冷媒の流路を形成する冷媒ジャケットをさらに備え、
前記冷媒ジャケットは、前記ピンフィンの下端と当接する中板と、前記中板よりも外周側に形成されかつ前記リブの下端と当接する本体部とを備え、
前記中板の上面は、前記本体部よりも上方に位置する、半導体装置。 - 前記リブの内周面、および前記ベース板と前記樹脂部材との境界に樹脂コーティング部が形成された、請求項3に記載の半導体装置。
- 前記リブの下端部に、Oリングが収容される溝部が形成された、請求項3または請求項4に記載の半導体装置。
- 請求項1に記載の半導体装置を製造する製造方法であって、
(a)ヒートスプレッダの上面に前記半導体素子を搭載する工程と、
(b)モールド金型内において、複数の前記ピンフィンに下治具を嵌合させた後、前記ベース板の上面に絶縁シートを介して前記ヒートスプレッダを搭載し組立体を形成する工程と、
(c)前記組立体をモールド成形する工程と、
(d)モールド成形された前記組立体から前記下治具を取り外す工程と、
を備えた、半導体装置の製造方法。 - 前記下治具は、前記モールド金型に設けられた、請求項6に記載の半導体装置の製造方法。
- 前記下治具の下面から下方に突出する突起が形成された、請求項6または請求項7に記載の半導体装置の製造方法。
- 前記工程(c)において、前記リブの下端部における前記下治具と対向する箇所に窪みが形成された、請求項6から請求項8のいずれか1項に記載の半導体装置の製造方法。
- (e)前記工程(c)と前記工程(d)との間に、前記リブにおける前記下治具が接触する箇所に鏡面仕上げを施す工程をさらに備えた、請求項6から請求項9のいずれか1項に記載の半導体装置の製造方法。
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