JP7239707B2 - 化学気相堆積中におけるチタンおよびケイ化チタンの選択性を強化するための方法および装置 - Google Patents
化学気相堆積中におけるチタンおよびケイ化チタンの選択性を強化するための方法および装置 Download PDFInfo
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- JP7239707B2 JP7239707B2 JP2021537977A JP2021537977A JP7239707B2 JP 7239707 B2 JP7239707 B2 JP 7239707B2 JP 2021537977 A JP2021537977 A JP 2021537977A JP 2021537977 A JP2021537977 A JP 2021537977A JP 7239707 B2 JP7239707 B2 JP 7239707B2
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- titanium
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- showerhead
- argon
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 107
- 239000010936 titanium Substances 0.000 title claims description 107
- 229910052719 titanium Inorganic materials 0.000 title claims description 106
- 238000000034 method Methods 0.000 title claims description 104
- 229910021341 titanium silicide Inorganic materials 0.000 title claims description 36
- 238000005229 chemical vapour deposition Methods 0.000 title description 12
- 230000002708 enhancing effect Effects 0.000 title description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 134
- 239000000758 substrate Substances 0.000 claims description 123
- 239000010410 layer Substances 0.000 claims description 115
- 239000000463 material Substances 0.000 claims description 105
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
- 238000012545 processing Methods 0.000 claims description 103
- 229910052710 silicon Inorganic materials 0.000 claims description 103
- 239000010703 silicon Substances 0.000 claims description 103
- 239000001257 hydrogen Substances 0.000 claims description 72
- 229910052739 hydrogen Inorganic materials 0.000 claims description 72
- 229910052786 argon Inorganic materials 0.000 claims description 67
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 59
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 58
- 229910000077 silane Inorganic materials 0.000 claims description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 38
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 36
- 150000002431 hydrogen Chemical class 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 239000007795 chemical reaction product Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 229910003074 TiCl4 Inorganic materials 0.000 claims 4
- 239000007789 gas Substances 0.000 description 53
- 239000004065 semiconductor Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 239000002210 silicon-based material Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- -1 SiH4 Chemical compound 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052756 noble gas Inorganic materials 0.000 description 5
- 150000004756 silanes Chemical class 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012805 post-processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000005389 semiconductor device fabrication Methods 0.000 description 3
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910005096 Si3H8 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910009871 Ti5Si3 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006854 communication Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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Description
Claims (15)
- シリコン表面および誘電体表面を有する基板の上にチタン材料層を選択的に堆積させる方法であって、
処理チャンバのリッドヒータとシャワーヘッドとの間の領域において、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)間の遠隔プラズマ反応を、摂氏200~800度の第1の温度で形成すること、ならびに
反応生成物を前記処理チャンバに流入させて、前記基板の前記シリコン表面にチタン材料層を選択的に形成すること
を含む方法。 - 前記基板が高アスペクト比特徴を含み、前記シリコン表面が、前記高アスペクト比特徴の底部に配されており、前記誘電体表面が、前記高アスペクト比特徴の1つまたは複数の側壁に配されている、請求項1に記載の方法。
- 前記第1の温度が摂氏550度である、請求項1または2に記載の方法。
- 前記遠隔プラズマ反応に、65ワットのRFエネルギーが与えられる、請求項1~3のいずれか1項に記載の方法。
- 前記チタン材料層を所定の厚さに堆積させる、請求項1~4のいずれか1項に記載の方法。
- 前記チタン材料層が、チタン、ケイ化チタンまたは実質的に純粋なチタンを含む、請求項1~5のいずれか1項に記載の方法。
- 前記シャワーヘッドにシラン、ジシラン、水素およびアルゴンを追加して、前記遠隔プラズマ反応と接触させることをさらに含む、請求項1~6のいずれか1項に記載の方法。
- 前記チタン材料層がケイ化チタンを含む、請求項7に記載の方法。
- 処理チャンバ内の前記シャワーヘッドと前記基板との間において、窒素(N2)、水素(H2)およびアルゴン(Ar)間の直接プラズマ反応を、摂氏200~800度の温度で形成して、前記基板の前記シリコン表面の上の前記チタン材料層上に窒化チタンキャッピング層を形成することをさらに含む、請求項1~8のいずれか1項に記載の方法。
- 前記誘電体表面が、酸化シリコンまたは窒化シリコンを含む、請求項1~9のいずれか1項に記載の方法。
- 前記基板の前記シリコン表面にチタン材料層を選択的に形成する前に、前記基板を摂氏200~800度の温度に予熱すること、ならびに前記基板および誘電体表面を、アルゴン、水素、シランおよびこれらの組合せと接触させることをさらに含む、請求項1~10のいずれか1項に記載の方法。
- 反応生成物を前記処理チャンバに流入させて、前記基板の前記シリコン表面にチタン材料層を選択的に形成した後に、前記チタン材料層を、摂氏200度よりも高い温度で後処理することをさらに含む、請求項1~11のいずれか1項に記載の方法。
- シリコン表面および誘電体表面を有する基板の上にチタン材料層を堆積させる方法であって、
前記基板の前記シリコン表面の下処理としてチタン材料の単層を堆積させるために、任意に、処理チャンバ内のシャワーヘッドと基板との間において、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)間の第1の直接プラズマ反応を、0.1~200秒の間、形成すること、
前記基板の前記シリコン表面の上に前記チタン材料層を堆積するために、または前記基板の前記シリコン表面の上の前記チタン材料の単層上にチタン材料層をさらに堆積させるために、処理チャンバ内のリッドヒータとシャワーヘッドとの間において、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)間の遠隔プラズマ反応を形成して、処理チャンバ内において基板上に前記チタン材料層を形成することであって、前記誘電体表面が、前記誘電体表面の上に前記チタン材料層が堆積することを抑制し、前記遠隔プラズマ反応が、摂氏200~800度の第1の温度で、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)を反応させる、形成すること、ならびに
処理チャンバ内の前記シャワーヘッドと前記基板との間において、窒素(N2)、水素(H2)およびアルゴン(Ar)間の直接プラズマ反応を形成して、前記チタン材料層上に窒化チタン層を形成すること
を含む方法。 - 処理チャンバ内のリッドヒータとシャワーヘッドとの間において、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)間の遠隔プラズマ反応を形成することが、前記シャワーヘッドにシラン、水素およびアルゴンを追加して、前記遠隔プラズマ反応と接触させることをさらに含む、請求項13に記載の方法。
- 命令が記憶された非一過性コンピュータ可読媒体であって、前記命令が、実行されたときに、シリコン表面および誘電体表面を有する基板の上にチタン材料層を選択的に堆積させる方法を堆積装置に実行させ、前記方法が、前記堆積装置の処理チャンバのリッドヒータとシャワーヘッドとの間の領域において、四塩化チタン(TiCl4)、水素(H2)およびアルゴン(Ar)間の遠隔プラズマ反応を、摂氏200~800度の第1の温度で形成すること、ならびに反応生成物を前記処理チャンバに流入させて、前記基板の前記シリコン表面にチタン材料層を選択的に形成することを含む、非一過性コンピュータ可読媒体。
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