JP7224202B2 - 基板研磨システム及び方法並びに基板研磨装置 - Google Patents
基板研磨システム及び方法並びに基板研磨装置 Download PDFInfo
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- JP7224202B2 JP7224202B2 JP2019030179A JP2019030179A JP7224202B2 JP 7224202 B2 JP7224202 B2 JP 7224202B2 JP 2019030179 A JP2019030179 A JP 2019030179A JP 2019030179 A JP2019030179 A JP 2019030179A JP 7224202 B2 JP7224202 B2 JP 7224202B2
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- 238000005498 polishing Methods 0.000 title claims description 227
- 239000000758 substrate Substances 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 12
- 238000012937 correction Methods 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 14
- 238000003825 pressing Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000013101 initial test Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
ΔV=(VOFFSET1・α-VOFFSET2)
2 研磨管理サーバ
5 被研磨層
11 研磨パッド
12 研磨制御部
15 研磨ヘッド
30 渦電流センサ
32 センサコイル
40 膜厚推定部
42 終点検知部
44 出力補正部
46 読取部
48 メモリ
50 通信部
W ウエハ
Claims (8)
- 基板の被研磨層の膜厚を測定するための膜厚センサを備え、前記基板を研磨パッドに押し付けることで前記被研磨層の研磨を行う第1基板研磨装置及び第2基板研磨装置から構成される基板研磨システムであって、
前記第1基板研磨装置は、前記被研磨層の下層が露呈したときの前記膜厚センサの出力値と、前記基板がないときの前記膜厚センサの出力値の差分を、第1オフセット値として出力し、
前記第2基板研磨装置は、
前記第1オフセット値の情報を記憶する記憶部と、
前記第1オフセット値に基づき前記膜厚センサからの出力値を補正する出力補正部と、
補正後の前記出力値に基づき算出された前記被研磨層の膜厚の測定値が目標値に達したときに、基板研磨の終点を指示する制御信号を出力する終点検知部とを備えたことを特徴とする、基板研磨システム。 - 前記第2基板研磨装置は、前記被研磨層の下層が露呈したときの前記膜厚センサの出力値と、前記基板がないときの前記膜厚センサの出力値の差分を、第2オフセット値として前記記憶部に記憶し、
前記出力補正部は、前記第1オフセット値及び前記第2オフセット値に基づき、前記膜厚センサからの出力値を補正することを特徴とする、請求項1記載の基板研磨システム。 - 前記第2基板研磨装置は、次式により算出された補正値を、前記膜厚センサからの出力値に加算することで、前記膜厚センサからの出力値を補正することを特徴とする、請求項2記載の基板研磨システム。
ΔV=(VOFFSET1・α-VOFFSET2)
ここで、VOFFSET1は前記第1オフセット値、VOFFSET2は前記第2オフセット値、αは重み値である。 - 前記第2基板研磨装置は、前記研磨パッドの減耗量に基づき前記目標値を補正することを特徴とする、請求項1~3のいずれか記載の基板研磨システム。
- 前記基板の識別情報と前記第1オフセット値を対応付けて記憶する研磨管理サーバをさらに備え、
前記第1基板研磨装置は、前記第1オフセット値を前記基板の識別情報と対応付けて前記研磨管理サーバに送信し、
前記第2基板研磨装置は、研磨対象である前記基板の識別情報を取得する読取部を備え、前記研磨管理サーバより前記識別情報に対応する前記第1オフセット値を取得することを特徴とする、請求項1~4のいずれか記載の基板研磨システム。 - 前記膜厚センサは渦電流センサであることを特徴とする、請求項1~5のいずれか記載の基板研磨システム。
- 基板の被研磨層の膜厚を測定するための膜厚センサを備え、前記基板を研磨パッドに押し付けることで前記被研磨層の研磨を行う第1基板研磨装置及び第2基板研磨装置により、前記被研磨層の研磨を順次行う基板研磨方法であって、
前記第1基板研磨装置は、前記被研磨層の下層が露呈したときの前記膜厚センサの出力値と、前記基板がないときの前記膜厚センサの出力値の差分を、第1オフセット値として出力し、
前記第2基板研磨装置は、
前記第1オフセット値の情報を記憶部に記憶し、
前記第1オフセット値に基づき前記膜厚センサからの出力値を補正し、
補正後の前記出力値に基づき算出された前記被研磨層の膜厚の測定値が目標値に達したときに、基板研磨の終点を指示する制御信号を出力することを特徴とする、基板研磨方法。 - 被研磨層を有する基板を研磨パッドに押し付けることで前記被研磨層の研磨を行うための研磨ヘッドと、
前記被研磨層の膜厚を測定するための膜厚センサと、
前記被研磨層に対する過去の研磨における、前記被研磨層の下層が露呈したときの前記膜厚センサの出力値と、前記基板がないときの前記膜厚センサの出力値の差分を示す情報を、第1オフセット値として記憶する記憶部と、
前記第1オフセット値に基づき、前記膜厚センサからの出力値を補正する出力補正部と、
補正後の出力値に基づく前記被研磨層の膜厚の測定値が目標値に達したときに、基板研磨の終点を指示する制御信号を出力する終点検知部とを備えたことを特徴とする基板研磨装置。
Priority Applications (6)
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JP2019030179A JP7224202B2 (ja) | 2019-02-22 | 2019-02-22 | 基板研磨システム及び方法並びに基板研磨装置 |
TW109103125A TWI830863B (zh) | 2019-02-22 | 2020-02-03 | 基板研磨系統及方法、與基板研磨裝置 |
KR1020200019520A KR20200102936A (ko) | 2019-02-22 | 2020-02-18 | 기판 연마 시스템 및 방법, 그리고 기판 연마 장치 |
SG10202001494SA SG10202001494SA (en) | 2019-02-22 | 2020-02-20 | Substrate polishing system, substrate polishing method and substrate polishing apparatus |
US16/797,316 US11633828B2 (en) | 2019-02-22 | 2020-02-21 | Substrate polishing system, substrate polishing method and substrate polishing apparatus |
CN202010106480.5A CN111604809B (zh) | 2019-02-22 | 2020-02-21 | 基板研磨***及方法和基板研磨装置 |
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JP2019030179A JP7224202B2 (ja) | 2019-02-22 | 2019-02-22 | 基板研磨システム及び方法並びに基板研磨装置 |
Publications (2)
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JP2020131387A JP2020131387A (ja) | 2020-08-31 |
JP7224202B2 true JP7224202B2 (ja) | 2023-02-17 |
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US (1) | US11633828B2 (ja) |
JP (1) | JP7224202B2 (ja) |
KR (1) | KR20200102936A (ja) |
CN (1) | CN111604809B (ja) |
SG (1) | SG10202001494SA (ja) |
TW (1) | TWI830863B (ja) |
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Citations (2)
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JP2009099842A (ja) | 2007-10-18 | 2009-05-07 | Ebara Corp | 研磨監視方法および研磨装置 |
JP2013036881A (ja) | 2011-08-09 | 2013-02-21 | Ebara Corp | 研磨監視方法および研磨装置 |
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US20050191858A1 (en) * | 2004-02-27 | 2005-09-01 | Akira Fukunaga | Substrate processing method and apparatus |
JP4790475B2 (ja) | 2006-04-05 | 2011-10-12 | 株式会社荏原製作所 | 研磨装置、研磨方法、および基板の膜厚測定プログラム |
JP2008258510A (ja) * | 2007-04-07 | 2008-10-23 | Tokyo Seimitsu Co Ltd | Cmp装置の研磨条件管理装置及び研磨条件管理方法 |
JP2010186866A (ja) * | 2009-02-12 | 2010-08-26 | Ebara Corp | 研磨方法 |
JP5611214B2 (ja) * | 2008-10-16 | 2014-10-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 渦電流利得の補償 |
US20130065493A1 (en) | 2011-08-09 | 2013-03-14 | Taro Takahashi | Polishing monitoring method, polishing end point detection method, and polishing apparatus |
JP6193623B2 (ja) * | 2012-06-13 | 2017-09-06 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
US9281253B2 (en) | 2013-10-29 | 2016-03-08 | Applied Materials, Inc. | Determination of gain for eddy current sensor |
US9275917B2 (en) * | 2013-10-29 | 2016-03-01 | Applied Materials, Inc. | Determination of gain for eddy current sensor |
US9636797B2 (en) * | 2014-02-12 | 2017-05-02 | Applied Materials, Inc. | Adjusting eddy current measurements |
KR102326730B1 (ko) | 2014-03-12 | 2021-11-17 | 가부시키가이샤 에바라 세이사꾸쇼 | 막 두께 측정값의 보정 방법, 막 두께 보정기 및 와전류 센서 |
JP2018083267A (ja) * | 2016-11-25 | 2018-05-31 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP7023062B2 (ja) * | 2017-07-24 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
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- 2020-02-03 TW TW109103125A patent/TWI830863B/zh active
- 2020-02-18 KR KR1020200019520A patent/KR20200102936A/ko not_active Application Discontinuation
- 2020-02-20 SG SG10202001494SA patent/SG10202001494SA/en unknown
- 2020-02-21 CN CN202010106480.5A patent/CN111604809B/zh active Active
- 2020-02-21 US US16/797,316 patent/US11633828B2/en active Active
Patent Citations (2)
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JP2009099842A (ja) | 2007-10-18 | 2009-05-07 | Ebara Corp | 研磨監視方法および研磨装置 |
JP2013036881A (ja) | 2011-08-09 | 2013-02-21 | Ebara Corp | 研磨監視方法および研磨装置 |
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SG10202001494SA (en) | 2020-09-29 |
US11633828B2 (en) | 2023-04-25 |
JP2020131387A (ja) | 2020-08-31 |
CN111604809B (zh) | 2024-05-31 |
TW202035066A (zh) | 2020-10-01 |
TWI830863B (zh) | 2024-02-01 |
US20200269380A1 (en) | 2020-08-27 |
CN111604809A (zh) | 2020-09-01 |
KR20200102936A (ko) | 2020-09-01 |
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