JP7221004B2 - 化学および電解の少なくとも一方の表面処理のための基板ロックシステム - Google Patents
化学および電解の少なくとも一方の表面処理のための基板ロックシステム Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 245
- 238000004381 surface treatment Methods 0.000 title claims description 54
- 239000000126 substance Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 claims description 65
- 239000012530 fluid Substances 0.000 claims description 39
- 238000009826 distribution Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000696 magnetic material Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 238000000866 electrolytic etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
Description
a)第1の素子と第2の素子との間に基板を配置するステップ、および
b)ロックユニットによって第1の素子および第2の素子を互いにロックするステップ
を含む。
第1のステップS1において、第1の素子Aと第2の素子Bとの間に基板30を配置する。
第2のステップS2において、ロックユニット50によって第1の素子Aおよび第2の素子Bを互いにロックする。
20 基板ホルダ
21 分布部
22 アノード
30 基板
100 デバイス
Claims (20)
- プロセス流体中における基板(30)の化学および電解の少なくとも一方の表面処理のための基板ロックシステム(10)であって、
第1の素子(A)と、
第2の素子(B)と、
ロックユニット(50)と
を備え、
前記第1の素子(A)および前記第2の素子(B)は、互いの間に前記基板(30)を保持するように構成され、
前記ロックユニット(50)は、前記第1の素子(A)および前記第2の素子(B)を互いにロックするように構成され、
前記ロックユニット(50)は、磁石制御装置と、少なくとも1つの磁石(51)とを含み、
前記磁石(51)は、前記第1の素子(A)に配置され、前記第2の素子(B)は磁性材料を少なくとも部分的に含み、
前記磁石制御装置は、前記第1の素子(A)と前記第2の素子(B)との間の磁力を制御するように構成され、
前記磁石制御装置は、前記第1の素子(A)に対する前記第2の素子(B)の反発を可能にするために永久磁石の磁力を反転させるように構成された、
基板ロックシステム(10)。 - 前記第1の素子(A)は第1の接触リング(46)であり、前記第2の素子(B)は第2の接触リング(46)であり、両方が互いの間に1つの基板(30)を保持するように構成された、請求項1に記載の基板ロックシステム(10)。
- 前記第1の素子(A)は基板ホルダ(20)であり、前記第2の素子(B)は接触ループ(40)であり、両方が互いの間に1つの基板(30)を保持するように構成された、請求項1に記載の基板ロックシステム(10)。
- 前記基板ホルダの裏面と追加の接触ループ(41)との間に追加の基板(30)を保持するように構成された前記追加の接触ループ(41)をさらに備える、請求項3に記載の基板ロックシステム(10)。
- 前記磁石(51)は、前記第1の素子(A)を前記第2の素子(B)へロックするように構成された永久磁石である、請求項1に記載の基板ロックシステム(10)。
- 前記ロックユニット(50)は、保持されることになる前記基板(30)に沿って前記第1の素子(A)に分布した幾つかの磁石(51)を含む、請求項1に記載の基板ロックシステム(10)。
- 前記磁石制御装置は、前記第1の素子(A)からの前記第2の素子(B)の解放を可能にするために前記永久磁石の前記磁力を少なくとも減少させるように構成された、請求項5に記載の基板ロックシステム(10)。
- 前記磁石制御装置は、前記第1の素子(A)からの前記第2の素子(B)の解放を可能にするために前記永久磁石の前記磁力を消失させるように構成された、請求項5に記載の基板ロックシステム(10)。
- 前記磁石制御装置は、電圧を印加することによって前記第1の素子(A)と前記第2の素子(B)との間の前記磁力を制御するように構成された、請求項1に記載の基板ロックシステム(10)。
- 前記第2の素子(B)は少なくとも部分的に導電性である、請求項1に記載の基板ロックシステム(10)。
- 前記第2の素子(B)は、磁性材料でできたいくつかの接触フィンガ(42)を含む、請求項1に記載の基板ロックシステム(10)。
- 前記第2の素子(B)は、前記第1の素子(A)に分布した幾つかの磁石(51)と接触して配置されることになる接触フィンガ(42)の幾つかのアレイを含む、請求項1に記載の基板ロックシステム(10)。
- 前記第1の素子(A)は、前記第1の素子(A)に沿って延びる少なくとも1つの導電体ロッド(27)を含む、請求項1のうちの何れか一項に記載の基板ロックシステム(10)。
- 前記第1の素子(A)に分布した幾つかの磁石(51)と接触して配置されることになる接触フィンガ(42)の一端は前記磁石(51)と接触し、前記磁石(51)は前記導電体ロッド(27)と接触する、請求項13に記載の基板ロックシステム(10)。
- 前記第1の素子(A)と前記第2の素子(B)との間に配置され、前記基板(30)、前記第1の素子(A)および前記第2の素子(B)の間の液密接続を確実にするように構成されたシールユニット(44、45)をさらに含む、請求項1に記載の基板ロックシステム(10)。
- 前記第1の素子(A)は基板ホルダ(20)であり、前記第2の素子(B)は接触ループ(40)であり、両方が互いの間に1つの基板(30)を保持するように構成され、
前記シールユニット(44、45)は、
前記基板(30)と前記接触ループ(40)との間の液密接続を確実にするように構成された内側シール(45)と、
前記基板ホルダ(20)と前記接触ループ(40)との間の液密接続を確実にするように構成された外側シール(44)と
を含む、請求項15に記載の基板ロックシステム(10)。 - 前記ロックユニット(50)は、両方の接触ループ(40、41)および前記基板ホルダ(20)を互いに同時にロックするように構成された、請求項4に記載の基板ロックシステム(10)。
- 前記ロックユニット(50)は、各接触ループ(40、41)および前記基板ホルダ(20)を互いに独立してロックするように構成された、請求項4に記載の基板ロックシステム(10)。
- プロセス流体中における基板(30)の化学および電解の少なくとも一方の表面処理のためのデバイス(100)であって、
請求項1~18のうちの何れか一項に記載の基板ロックシステム(10)と、
分布部(21)と
を備え、
前記分布部(21)は、前記プロセス流体および電流の少なくとも一方の流れを前記基板(30)へ導くように構成された、
デバイス(100)。 - プロセス流体中における基板(30)の化学および電解の少なくとも一方の表面処理のための基板ロック方法であって、
第1の素子(A)と第2の素子(B)との間に基板(30)を配置し、
ロックユニット(50)によって前記第1の素子(A)および前記第2の素子(B)を互いにロックする
ことを含み、
前記ロックユニット(50)は、磁石制御装置と、少なくとも1つの磁石(51)とを含み、
前記磁石(51)は、前記第1の素子(A)に配置されて、前記第2の素子(B)は磁性材料を少なくとも部分的に含み、
前記磁石制御装置は、前記第1の素子(A)と前記第2の素子(B)との間の磁力を制御するように構成され、
前記磁石制御装置は、前記第1の素子(A)に対する前記第2の素子(B)の反発を可能にするために永久磁石の磁力を反転させるように構成された、
基板ロック方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1712069.2A GB2564896B (en) | 2017-07-27 | 2017-07-27 | Substrate locking system for chemical and/or electrolytic surface treatment |
GB1712069.2 | 2017-07-27 |
Publications (2)
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EP4043618A1 (en) * | 2020-01-21 | 2022-08-17 | Semsysco GmbH | Substrate holding and locking system for chemical and/or electrolytic surface treatment |
TWI821659B (zh) * | 2021-04-30 | 2023-11-11 | 奧地利商勝思科技有限公司 | 用於化學或電解或化學及電解表面處理之基板固持及鎖持系統及方法 |
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US20110308955A1 (en) | 2010-02-16 | 2011-12-22 | Cypress Semiconductor Corporation | Integrated shielding for wafer plating |
US20130248361A1 (en) | 2011-06-07 | 2013-09-26 | Deca Technologies Inc | Adjustable wafer plating shield and method |
US20140024178A1 (en) | 2012-07-18 | 2014-01-23 | Deca Technologies Inc. | Magnetically sealed wafer plating jig system and method |
JP2015535891A (ja) | 2012-10-02 | 2015-12-17 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 製品保持装置および処理方法 |
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TW201923161A (zh) | 2019-06-16 |
US11136687B2 (en) | 2021-10-05 |
CN109306475A (zh) | 2019-02-05 |
GB2564896B (en) | 2021-12-01 |
GB201712069D0 (en) | 2017-09-13 |
GB2564896A (en) | 2019-01-30 |
US20190032234A1 (en) | 2019-01-31 |
US20210017662A1 (en) | 2021-01-21 |
JP2019049047A (ja) | 2019-03-28 |
TWI826385B (zh) | 2023-12-21 |
US11566337B2 (en) | 2023-01-31 |
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