JP7212439B2 - 超電導部分tsvを用いたトランスモン・キュービット用の後面結合 - Google Patents
超電導部分tsvを用いたトランスモン・キュービット用の後面結合 Download PDFInfo
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- 230000008878 coupling Effects 0.000 title claims description 47
- 238000010168 coupling process Methods 0.000 title claims description 47
- 238000005859 coupling reaction Methods 0.000 title claims description 47
- 241000724291 Tobacco streak virus Species 0.000 title description 2
- 238000004519 manufacturing process Methods 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 108
- 238000010586 diagram Methods 0.000 description 42
- 239000002096 quantum dot Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 15
- 239000000945 filler Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000005610 quantum mechanics Effects 0.000 description 3
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
202 超電導Cカプラ
203,303 充填材
204 容量結合
205 誘電体
206 容量パッド
208 部分バイア
208A 頂部
208B 側面部分
210 I/Oパッド
304,306 延長部分
310 超伝導パッド
Claims (10)
- 容量結合デバイス(超電導Cカプラ)であって、
基板の後面から、前記基板の前面の製造平面に対して実質的に直角に基板内に延び、前記基板の厚さよりも浅い前記基板内の1つの深さまで達するトレンチと、
前記トレンチの中にバイア層として堆積させた超電導材料と
を備え、前記トレンチの中の前記バイア層の表面間の空間が前記後面からアクセス可能なままであり、前記容量結合デバイス(超電導Cカプラ)がさらに、
前記前面の超電導パッドであり、前記前面に製造された量子論理回路要素と結合する前記超電導パッドと、
前記後面の前記バイア層の延長部分であり、前記後面に製造された量子読出し回路要素に結合する前記延長部分と
を備える容量結合デバイス(超電導Cカプラ)。 - 前記バイア層の前記表面間の前記空間に前記後面から充填された誘電体材料
をさらに備える、請求項1に記載の超電導Cカプラ。 - 前記誘電体材料が酸化シリコン(SiO2)である、請求項2に記載の超電導Cカプラ。
- 前記バイア層の前記表面間の前記空間が空気によって占められる、請求項1に記載の超電導Cカプラ。
- 前記超電導パッドは、前記基板の前記前面に配置される第2の超電導材料の層である、請求項1に記載の超電導Cカプラ。
- 前記バイア層の前記延長部分が前記量子読出し回路要素に電気的に結合された、請求項1に記載の超電導Cカプラ。
- 前記バイア層の前記延長部分が前記量子読出し回路要素に直接に電気的に結合された、請求項1に記載の超電導Cカプラ。
- 前記バイア層の前記延長部分が前記後面の第2の超電導パッドに電気的に結合されており、前記第2の超電導パッドが前記量子読出し回路要素に結合する、請求項1に記載の超電導Cカプラ。
- 前記量子読出し回路要素が回路の接地面を含み、前記Cカプラがさらに、前記回路に結合する他のCカプラの接地遮蔽として機能する、請求項1に記載の超電導Cカプラ。
- 方法であって、
基板の後面から、前記基板の前面の製造平面に対して実質的に直角に基板内に延び、前記基板の厚さよりも浅い前記基板内の1つの深さまで達するトレンチを、容量結合デバイス(超電導Cカプラ)内に形成すること、および
前記トレンチの中に超電導材料をバイア層として堆積させること
を含み、前記トレンチの中の前記バイア層の表面間の空間が前記後面からアクセス可能なままであり、前記方法がさらに、
前記前面に製造された量子論理回路要素と結合する超電導パッドを、前記前面に形成すること、および
前記後面に製造された量子読出し回路要素に結合する前記バイア層の延長部分を、前記後面に形成すること
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/822,338 US10446736B2 (en) | 2017-11-27 | 2017-11-27 | Backside coupling with superconducting partial TSV for transmon qubits |
US15/822,338 | 2017-11-27 | ||
PCT/EP2018/078707 WO2019101448A1 (en) | 2017-11-27 | 2018-10-19 | Backside coupling with superconducting partial tsv for transmon qubits |
Publications (3)
Publication Number | Publication Date |
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JP2021504936A JP2021504936A (ja) | 2021-02-15 |
JP2021504936A5 JP2021504936A5 (ja) | 2021-03-25 |
JP7212439B2 true JP7212439B2 (ja) | 2023-01-25 |
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JP2020526133A Active JP7212439B2 (ja) | 2017-11-27 | 2018-10-19 | 超電導部分tsvを用いたトランスモン・キュービット用の後面結合 |
Country Status (6)
Country | Link |
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US (3) | US10446736B2 (ja) |
EP (1) | EP3707647B1 (ja) |
JP (1) | JP7212439B2 (ja) |
CN (1) | CN111295678B (ja) |
ES (1) | ES2896013T3 (ja) |
WO (1) | WO2019101448A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10068184B1 (en) * | 2017-10-27 | 2018-09-04 | International Business Machines Corporation | Vertical superconducting capacitors for transmon qubits |
US10446736B2 (en) * | 2017-11-27 | 2019-10-15 | International Business Machines Corporation | Backside coupling with superconducting partial TSV for transmon qubits |
US10811588B2 (en) * | 2018-08-06 | 2020-10-20 | International Business Machines Corporation | Vertical dispersive readout of qubits of a lattice surface code architecture |
US11088310B2 (en) * | 2019-04-29 | 2021-08-10 | International Business Machines Corporation | Through-silicon-via fabrication in planar quantum devices |
WO2021178042A1 (en) * | 2020-03-02 | 2021-09-10 | Massachusetts Institute Of Technology | Qubit circuits with deep, in-substrate components |
US11289638B2 (en) * | 2020-06-22 | 2022-03-29 | International Business Machines Corporation | Superconducting qubit lifetime and coherence improvement via backside etching |
WO2022143809A1 (zh) * | 2020-12-31 | 2022-07-07 | 合肥本源量子计算科技有限责任公司 | 超导量子芯片结构以及超导量子芯片制备方法 |
EP4053865B1 (en) * | 2021-03-02 | 2024-04-24 | Imec VZW | Trench capacitor device for a superconducting electronic circuit, superconducting qubit device and method for forming a trench capacitor device for a qubit device |
CN115697029B (zh) * | 2022-12-30 | 2023-06-20 | 量子科技长三角产业创新中心 | 一种超导量子芯片及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014027194A (ja) | 2012-07-30 | 2014-02-06 | National Institute Of Advanced Industrial & Technology | イオン粒子検出器並びにイオン粒子検出方法 |
JP2015511067A (ja) | 2012-03-08 | 2015-04-13 | ディー−ウェイブ システムズ,インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
US20160148112A1 (en) | 2014-11-25 | 2016-05-26 | Samsung Electronics Co., Ltd. | Multi-qubit coupling structure |
JP2017110293A (ja) | 2015-12-15 | 2017-06-22 | 東京エレクトロン株式会社 | カーボン膜の成膜方法および成膜装置 |
JP2017529695A (ja) | 2014-08-13 | 2017-10-05 | ディー−ウェイブ システムズ,インコーポレイテッド | 低磁気雑音の超伝導配線層を形成する方法 |
WO2017217961A1 (en) | 2016-06-13 | 2017-12-21 | Intel Corporation | Josephson junctions made from refractory and noble metals |
WO2018125026A1 (en) | 2016-12-27 | 2018-07-05 | Intel Corporation | Superconducting qubit device packages |
JP2019504511A (ja) | 2015-12-15 | 2019-02-14 | グーグル エルエルシー | 超伝導バンプボンド |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117357A (en) | 1977-04-15 | 1978-09-26 | Electric Power Research Institute, Inc. | Flexible coupling for rotor elements of a superconducting generator |
JPS6054485A (ja) * | 1983-09-05 | 1985-03-28 | Agency Of Ind Science & Technol | ジョゼフソン接合の製造方法 |
US5232905A (en) | 1987-01-30 | 1993-08-03 | Hitachi, Ltd. | High Tc superconducting device with weak link between two superconducting electrodes |
US5099215A (en) | 1990-08-29 | 1992-03-24 | General Electric Company | Coupling device for a superconducting magnet |
JPH05129671A (ja) | 1991-10-31 | 1993-05-25 | Sharp Corp | 超電導磁気抵抗効果素子およびその製造方法 |
US5291168A (en) | 1992-05-11 | 1994-03-01 | General Electric Company | Connector cooling and protection for power coupling assembly for superconducting magnets |
US5569387A (en) | 1994-11-14 | 1996-10-29 | Bowne; William C. | Wastewater collection and discharge system |
JP3444893B2 (ja) | 1995-05-19 | 2003-09-08 | アメリカン スーパーコンダクター コーポレイション | マルチフィラメント状超伝導性複合材料および製法 |
US6347237B1 (en) | 1999-03-16 | 2002-02-12 | Superconductor Technologies, Inc. | High temperature superconductor tunable filter |
US6351045B1 (en) | 1999-09-30 | 2002-02-26 | Reliance Electric Technologies, Llc | Croyogenic rotary transfer coupling for superconducting electromechanical machine |
US6657333B2 (en) | 2001-09-17 | 2003-12-02 | Reliance Electric Technologies, Llc | Vacuum coupling of rotating superconducting rotor |
US7268576B2 (en) * | 2004-11-08 | 2007-09-11 | D-Wave Systems Inc. | Superconducting qubit with a plurality of capacitive couplings |
KR100776419B1 (ko) | 2006-05-04 | 2007-11-16 | 조선대학교산학협력단 | 켄치특성 개선용 자속구속형 초전도 전류제한기 |
US7477055B1 (en) | 2007-08-21 | 2009-01-13 | General Electric Company | Apparatus and method for coupling coils in a superconducting magnet |
US8607179B2 (en) | 2011-11-25 | 2013-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | RC extraction methodology for floating silicon substrate with TSV |
US20160104073A1 (en) * | 2012-12-05 | 2016-04-14 | The United States Of America As Represented By The Secretary Of Commerce | Radiation Suppression of Superconducting Quantum Bits Using a Conductive Plane |
TWI493666B (zh) | 2013-01-25 | 2015-07-21 | 義守大學 | 晶片間信號傳輸系統及晶片間電容耦合傳輸電路 |
US10145743B2 (en) | 2013-03-05 | 2018-12-04 | Teknologian Tutkimuskeskus Vtt Oy | Superconducting thermal detector (bolometer) of terahertz (sub-millimeter wave) radiation |
US9524470B1 (en) | 2015-06-12 | 2016-12-20 | International Business Machines Corporation | Modular array of vertically integrated superconducting qubit devices for scalable quantum computing |
WO2017015432A1 (en) | 2015-07-23 | 2017-01-26 | Massachusetts Institute Of Technology | Superconducting integrated circuit |
US9922289B2 (en) | 2015-09-30 | 2018-03-20 | International Business Machines Corporation | Quantum nondemolition microwave photon counter based on the cross-Kerr nonlinearity of a Josephson junction embedded in a superconducting circuit |
CN105470225B (zh) | 2015-12-09 | 2018-04-17 | 西安交通大学 | 基于穿硅电容的三维容性耦合互连结构的制作方法 |
US10446736B2 (en) * | 2017-11-27 | 2019-10-15 | International Business Machines Corporation | Backside coupling with superconducting partial TSV for transmon qubits |
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2017
- 2017-11-27 US US15/822,338 patent/US10446736B2/en active Active
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2018
- 2018-10-19 CN CN201880070681.5A patent/CN111295678B/zh active Active
- 2018-10-19 ES ES18795343T patent/ES2896013T3/es active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015511067A (ja) | 2012-03-08 | 2015-04-13 | ディー−ウェイブ システムズ,インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
JP2014027194A (ja) | 2012-07-30 | 2014-02-06 | National Institute Of Advanced Industrial & Technology | イオン粒子検出器並びにイオン粒子検出方法 |
JP2017529695A (ja) | 2014-08-13 | 2017-10-05 | ディー−ウェイブ システムズ,インコーポレイテッド | 低磁気雑音の超伝導配線層を形成する方法 |
US20160148112A1 (en) | 2014-11-25 | 2016-05-26 | Samsung Electronics Co., Ltd. | Multi-qubit coupling structure |
JP2017110293A (ja) | 2015-12-15 | 2017-06-22 | 東京エレクトロン株式会社 | カーボン膜の成膜方法および成膜装置 |
JP2019504511A (ja) | 2015-12-15 | 2019-02-14 | グーグル エルエルシー | 超伝導バンプボンド |
WO2017217961A1 (en) | 2016-06-13 | 2017-12-21 | Intel Corporation | Josephson junctions made from refractory and noble metals |
WO2018125026A1 (en) | 2016-12-27 | 2018-07-05 | Intel Corporation | Superconducting qubit device packages |
Also Published As
Publication number | Publication date |
---|---|
ES2896013T3 (es) | 2022-02-23 |
US10446736B2 (en) | 2019-10-15 |
WO2019101448A1 (en) | 2019-05-31 |
US20200052181A1 (en) | 2020-02-13 |
JP2021504936A (ja) | 2021-02-15 |
CN111295678A (zh) | 2020-06-16 |
CN111295678B (zh) | 2023-07-28 |
US20190165237A1 (en) | 2019-05-30 |
EP3707647A1 (en) | 2020-09-16 |
US10804454B2 (en) | 2020-10-13 |
EP3707647B1 (en) | 2021-09-29 |
US10529908B2 (en) | 2020-01-07 |
US20190181325A1 (en) | 2019-06-13 |
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