JP7210647B2 - 薄膜蒸着方法及びこれを用いた半導体素子の製造方法 - Google Patents
薄膜蒸着方法及びこれを用いた半導体素子の製造方法 Download PDFInfo
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- JP7210647B2 JP7210647B2 JP2021106518A JP2021106518A JP7210647B2 JP 7210647 B2 JP7210647 B2 JP 7210647B2 JP 2021106518 A JP2021106518 A JP 2021106518A JP 2021106518 A JP2021106518 A JP 2021106518A JP 7210647 B2 JP7210647 B2 JP 7210647B2
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- thin film
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- 238000007736 thin film deposition technique Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 22
- 239000012495 reaction gas Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000000427 thin-film deposition Methods 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Description
110 下地層
120 下部薄膜
130 上部薄膜
150 基板処理装置
Claims (11)
- 内部に処理空間を限定するチャンバー、前記チャンバーの下部領域に位置し、基板が載置される基板支持部、前記チャンバーの上部領域に位置し、前記基板にソースガス及び反応ガスを提供するガス供給部、並びに、前記チャンバーに高周波及び低周波の電源を供給する電源供給部を含む基板処理装置を用いた薄膜蒸着方法であって、
低温帯域の工程温度条件により蒸着された下部薄膜を含む前記基板を、前記基板支持部上に載置するステップ;
前記下部薄膜の上部に、前記低温帯域の工程温度条件によりプラズマ雰囲気で上部薄膜を蒸着するステップ;及び、
前記上部薄膜を蒸着するステップの以後、前記上部薄膜の表面を前記低温帯域の工程温度条件によりプラズマ雰囲気でプラズマトリートメントするステップを含み、
前記低温帯域の工程温度は100℃乃至250℃であり、
前記下部薄膜は、非晶質炭素膜、チタニウム酸化膜又はSOGである
ことを特徴とする、薄膜蒸着方法。 - 前記上部薄膜を蒸着するステップは、前記基板上にシリコンを含有するソースガスと、窒素及び酸素を含有する反応ガスとを供給し、前記チャンバーの内部に高周波及び低周波を印加してプラズマを発生させた状態で進行することを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記上部薄膜を蒸着するステップは、前記ソースガス対前記反応ガスの比率を1.2~2.5対1の割合で供給することを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記ソースガスは、SiH4ガスを含むことを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記反応ガスは、N2O及びNOの何れか一つを含むことを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記上部薄膜を蒸着する際に、前記チャンバー内の圧力は1.5乃至4.0Torrであることを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記上部薄膜は、シリコン酸窒化膜を含むことを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記電源供給部において、
前記高周波は、中心周波数帯域が10MHz~40MHzを持つHFであり、
前記低周波は、前記中心周波数帯域が300kHz~500kHzを持つLFであることを特徴とする、請求項1に記載の薄膜蒸着方法。 - 前記トリートメントステップは、前記反応ガスを供給し、前記チャンバーの内部に高周波及び低周波を印加して、プラズマを発生させた状態で進行することを特徴とする、請求項1に記載の薄膜蒸着方法。
- 前記プラズマトリートメントステップは、前記上部薄膜蒸着ステップと連続して、前記ソースガスの供給を中断したままに進行することを特徴とする、請求項1に記載の薄膜蒸着方法。
- 基板の上部に下地層を形成するステップ;
前記下地層の上部に前記下地層とエッチング選択比を持つ下部薄膜を低温帯域の工程温度で蒸着するステップ;
前記下部薄膜の上部に前記下部薄膜とエッチング選択比を持つ上部薄膜を前記低温帯域の工程温度で蒸着するステップ;
前記上部薄膜をプラズマトリートメントして、ハードマスクを形成するステップ;及び、
前記ハードマスクを用いて前記下地層をパタニングするステップを含み、
前記低温帯域の工程温度は100℃乃至250℃の範囲であり、
前記上部薄膜は、反応ガス及び前記反応ガスよりも過量で含まれたソースガスを用いて蒸着し、
前記プラズマトリートメントは、前記反応ガスを供給して進行されることを特徴とする、請求項1乃至10に記載の薄膜蒸着方法を用いた半導体素子の製造方法。
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JP2001015506A (ja) | 1999-06-29 | 2001-01-19 | Nec Yamagata Ltd | プラズマcvdによる反射防止膜の製造方法 |
JP2010053397A (ja) | 2008-08-28 | 2010-03-11 | Tokyo Electron Ltd | アモルファスカーボンナイトライド膜の形成方法、アモルファスカーボンナイトライド膜、多層レジスト膜、半導体装置の製造方法および制御プログラムが記憶された記憶媒体 |
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