JP7207451B2 - 固体撮像素子及び電子機器 - Google Patents
固体撮像素子及び電子機器 Download PDFInfo
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- JP7207451B2 JP7207451B2 JP2021087576A JP2021087576A JP7207451B2 JP 7207451 B2 JP7207451 B2 JP 7207451B2 JP 2021087576 A JP2021087576 A JP 2021087576A JP 2021087576 A JP2021087576 A JP 2021087576A JP 7207451 B2 JP7207451 B2 JP 7207451B2
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- 238000002955 isolation Methods 0.000 claims description 123
- 238000006243 chemical reaction Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 80
- 238000000926 separation method Methods 0.000 claims description 65
- 238000003384 imaging method Methods 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920001909 styrene-acrylic polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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Description
(A)第1実施形態:
(B)第2実施形態:
(C)第3実施形態:
図1は、本実施形態に係る固体撮像素子の画素配列を平面的に示した図、図2は、本実施形態に係る固体撮像素子の断面構成を模式的に示す図である。なお、本実施形態では裏面照射型の固体撮像素子を例に取り説明を行うが、本技術は以下で説明する光電変換素子PDを備える表面照射型の固体撮像素子としても実現可能である。
次に、図10~図13を参照しつつ第1実施形態に係る固体撮像素子の製造方法の一例を説明する。
図14は、本技術を適用した電子機器の一実施の形態の構成を示すブロック図である。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子であって、
一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られている、固体撮像素子。
前記第1種分離領域で前記光電変換素子を仕切られた画素と、前記第2種分離領域で前記光電変換素子を仕切られた画素と、は互いに異なる色の画素である、前記(1)に記載の固体撮像素子。
複数の前記画素は、赤、青、緑の画素の組み合わせで構成され、
前記第2種分離領域で前記光電変換素子を仕切られた画素は、青画素により構成され、
前記第1種分離領域で前記光電変換素子を仕切られた画素は、赤画素及び緑画素により構成されている、前記(1)又は前記(2)に記載の固体撮像素子。
平板状の前記第2種分離領域はシリコン酸化膜であり、板厚が青色光の波長以下である、
前記(1)又は前記(2)に記載の固体撮像素子。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子の製造方法であって、
一部の前記画素について、前記光電変換素子を前記シリコン基板の厚み方向に沿う方向に平板状に延びて仕切る第1種分離領域を形成する工程と、
他の一部の前記画素について、前記光電変換素子を前記シリコン基板の厚み方向に沿う方向に平板状に延びて仕切る第2種分離領域を前記第1種分離領域と異なる材質で形成する工程と、
を含む、固体撮像素子の製造方法。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子を備える電子機器であって、
一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られている、電子機器。
Claims (10)
- それぞれ半導体基板上に形成された光電変換素子を有する複数の画素と、
前記複数の画素の各単位画素領域の境界に形成された素子分離と、を備え、
前記複数の画素は、それぞれが隣接する第1の画素と第2の画素と第3の画素と第4の画素と、を有し、
前記第1の画素の光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって分離され、
前記第2の画素、前記第3の画素及び前記第4の画素それぞれの光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第2種分離領域によって分離されており、
前記第2種分離領域は、前記第1種分離領域と異なる材質で形成されている、固体撮像素子。 - それぞれ半導体基板上に形成された光電変換素子を有する複数の画素と、
前記複数の画素の各単位画素領域の境界に形成された素子分離と、を備え、
前記複数の画素は、それぞれが隣接する第1の画素と第2の画素と第3の画素と第4の画素と、を有し、
前記第1の画素の光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって分離され、
前記第2の画素、前記第3の画素及び前記第4の画素それぞれの光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第2種分離領域によって分離されており、
前記第1種分離領域は、不純物イオン注入により形成されており、
前記第2種分離領域は、酸化膜により形成されている、固体撮像素子。 - それぞれ半導体基板上に形成された光電変換素子を有する複数の画素と、
前記複数の画素の各単位画素領域の境界に形成された素子分離と、を備え、
前記複数の画素は、それぞれが隣接する第1の画素と第2の画素と第3の画素と第4の画素と、を有し、
前記第1の画素の光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって分離され、
前記第2の画素、前記第3の画素及び前記第4の画素それぞれの光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第2種分離領域によって分離されており、
前記第2種分離領域は、酸化膜により形成されており、
前記第1種分離領域又は前記第2種分離領域は、平面視で十字状に形成されている、固体撮像素子。 - それぞれ半導体基板上に形成された光電変換素子を有する複数の画素と、
前記複数の画素の各単位画素領域の境界に形成された素子分離と、を備え、
前記複数の画素は、それぞれが隣接する第1の画素と第2の画素と第3の画素と第4の画素と、を有し、
前記第1の画素の光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって分離され、
前記第2の画素、前記第3の画素及び前記第4の画素それぞれの光電変換素子は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第2種分離領域によって分離されており、
前記第2種分離領域は、酸化膜により形成されており、
前記第3の画素を分離する前記第2種分離領域は、平面視で十字状に形成されている、固体撮像素子。 - 前記第1の画素は、赤色の波長に対応する画素である、請求項1~4のいずれか1項に記載の固体撮像素子。
- 前記第2の画素及び前記第4の画素は、緑の波長に対応する画素である、請求項1~5のいずれか1項に記載の固体撮像素子。
- 前記第3の画素は、青の波長に対応する画素である、請求項1~6のいずれか1項に記載の固体撮像素子。
- 前記第2種分離領域は、酸化膜により形成されている、請求項1、5~7のいずれか1項に記載の固体撮像素子。
- 前記素子分離、前記第1種分離領域及び前記第2種分離領域は、前記半導体基板の厚み方向について、前記半導体基板の裏面から、前記半導体基板の途中深さまで形成されており、前記半導体基板の表面との間に隙間を有する、請求項1~8のいずれか1項に記載の固体撮像素子。
- 請求項1~9のいずれか1項に記載の固体撮像素子を備える、電子機器。
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