JP7203431B2 - 電界効果調整可能イプシロンニアゼロ吸収装置 - Google Patents
電界効果調整可能イプシロンニアゼロ吸収装置 Download PDFInfo
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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Description
入射角度およびITO膜厚および波長の関数として、p-分極(TM)光吸収率が、図2A~図2Fに示される。吸収率は、IMDソフトウエアを用いて計算される。ITOの光学特性は、自由電子ドルーデモデル(Drude model)を用いてモデリングされる。強度のスケールバーは、多くの図の右にある。
図4Aは、電界効果調整可能なENZ層を有する金属酸化物半導体(MOS)構造の例の模式図である。調整可能な吸収は、電界効果により可能になる。MOS構造は、TCOを有する電子電界効果トランジスタに類似しても良い。金属とTCOとの間にバイアスを加えた場合、TCO-絶縁体界面のTCO中に電子蓄積が起きる。電子蓄積は、TCOの複雑な誘電体定数を変える、電子蓄積は、プラズマとENZ周波数を増加させ、それにより、波長の吸収ピークのブルーシフトに繋がる。ポアソン式およびドリフト拡散式を自己整合的に解く商業的なデバイスシミュレータが、MOSデバイス中の電子分布を計算するために使用された。
t<10nm~ζD≒1~2nm
となる。
図6Aは、図1Bの構造中で光を用いた初期入射で、高い指数材料を有する単層のための、測定された吸収率と波長との模式的な図である。実験は、超薄層ベレマン吸収装置およびENZ吸収装置の吸収および枯渇から形成された。
図7Aは、例えば図1Aおよび図1Bに示されたAZO多層クレッチュマン-ラター構造中のENZモード励起の模式図である。図7Bは、例えば図1AのようなAZO多層構造中の放射ベレマンモードの模式図である。図7Cは、図1Bに示すプリズムの無い入射光のための高指数材料を有するバウンドENZモード構造の模式図である。
図10は、与えられたバイアスにおけるシミュレーションされたMOS電界効果完全吸収装置の4つの組み合わせの、酸化物-ITO界面における電子密度の模式図である。この例では、与えられるバイアスは5Vである。ITOバルクの電子密度は、1×1021cm-3である。MOS構造は、実線はAg-HfO2-ITO、破線はAu-HfO2-ITO、点線はAg-Al2O3-ITO、一点鎖線はCu-HfO2-ITOである。金属の仕事関数は、銀は4.26eV、金は5.1eV、銅は4.65eVである。ハフニウム酸化物の誘電定数は25で、アルミニウム酸化物の誘電定数は25である。
Claims (21)
- 1つの方向からの入射光から所定の波長で完全吸収のイプシロンニアゼロ(ENZ)レジームの誘電率を形成するように形成され、適用された電気バイアスにより誘電率が変化するように調整可能に形成された導電性材料のための空間電荷領域の膜厚に対してある膜厚を有する、少なくとも1層の導電性材料を含み、
空間電荷領域の膜厚に対してある膜厚を有する複数の導電性層の少なくとも1層は、8:1またはそれ以下の比を含む電子デバイス。 - 導電性材料は、金属または半金属がドープされ、イプシロンニアゼロ(ENZ)レジームの誘電率のために材料中にキャリア濃度を形成する、少なくとも1つの部分的に透明な半導体材料を含む請求項1に記載のデバイス。
- 半導体材料は、透明な導電性酸化物(TCO)材料または遷移金属窒化物材料の少なくとも1つからなる少なくとも1層を含む請求項1に記載のデバイス。
- 異なるキャリア濃度を有する少なくとも2つの層を含む請求項1に記載のデバイス。
- 異なるENZレジームを有する少なくとも2つの層を含む請求項1に記載のデバイス。
- さらに、少なくとも1層に接続された酸化層と、少なくとも1層から遠位で酸化層に接続された金属層とを含み、金属酸化物半導体(MOS)形状を形成する請求項1に記載のデバイス。
- MOS形状は、MOS形状に電気バイアスを与えることにより、光の吸収周波数が調整可能な請求項6に記載のデバイス。
- さらに、少なくとも1層に接続された金属リフレクタを含む請求項1に記載のデバイス。
- さらに、少なくとも1層の前に光を受けるように形成された高い屈折率の材料を含む請求項1に記載のデバイス。
- 異なるENZレジームを有し、異なる周波数で光を吸収するように形成された少なくとも2つの層を備えた、所定の波長でイプシロンニアゼロ(ENZ)レジームの誘電率を有する複数の導電性層のスタックを含み、
複数の導電体層の少なくとも1つは、1つの方向からの光の所定の波長で完全吸収のイプシロンニアゼロ(ENZ)レジームの誘電率を形成するように形成され、適用された電気バイアスにより誘電率が変化するように調整可能に形成された導電性材料のための空間電荷領域の膜厚に対してある膜厚を有し、
空間電荷領域の膜厚に対してある膜厚を有する複数の導電性層の少なくとも1層は、8:1またはそれ以下の比を含む電子デバイス。 - 複数の層の少なくとも1つは、キャリア濃度を形成するために、少なくとも1つの金属または半金属がドープされた半導体材料を含む請求項10に記載のデバイス。
- 電気バイアスをデバイスに与えることにより、異なる誘電率に調整可能な請求項10に記載のデバイス。
- さらに、少なくとも1層に接続された金属リフレクタを含む請求項10に記載のデバイス。
- さらに、少なくとも1層の前に光を受けるように形成された高い屈折率の材料を含む請求項10に記載のデバイス。
- さらに、少なくとも1層に接続された酸化層と、少なくとも1層から遠位で酸化層に接続された金属層とを含み、金属酸化物半導体(MOS)形状を形成する請求項10に記載のデバイス。
- MOS形状は、MOS形状に電気バイアスを与えることにより、異なる光の周波数を吸収するように調整可能な請求項15に記載のデバイス。
- 所定の波長で完全吸収のイプシロンニアゼロ(ENZ)レジームの誘電率を形成するように形成された導電性材料のための空間電荷領域の膜厚に対してある膜厚を有する少なくとも1層の導電性材料を含む電子デバイスを使用する方法であって、
空間電荷領域の膜厚に対してある膜厚を有する複数の導電性層の少なくとも1層は、8:1またはそれ以下の比を含み、この方法は、
デバイスに電気バイアスを与える工程と、
様々な周波数の光を吸収するようにデバイスを調整する工程と、を含む方法。 - 少なくとも1つの層は、所定の波長で完全吸収のイプシロンニアゼロ(ENZ)レジームの誘電率となるために、金属または半金属がドープされて材料中にキャリア濃度を形成する半導体材料を含む請求項17に記載の方法。
- デバイスは、異なるENZレジームを有する少なくとも2つの層を含み、さらに、少なくとも2つの層を通る異なる周波数の入射光を吸収する工程を含む請求項17に記載の方法。
- 空間電荷領域の膜厚に対してある膜厚を有する複数の導電性層の少なくとも1層は、5:1またはそれ以下の比を含む請求項1に記載の電子デバイス。
- 空間電荷領域の膜厚に対してある膜厚を有する複数の導電性層の少なくとも1層は、5:1またはそれ以下の比を含む請求項10に記載の電子デバイス。
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US201762504985P | 2017-05-11 | 2017-05-11 | |
US62/504,985 | 2017-05-11 | ||
PCT/US2018/032342 WO2018209250A1 (en) | 2017-05-11 | 2018-05-11 | Field-effect tunable epsilon-near-zero absorber |
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US12019208B2 (en) * | 2020-06-30 | 2024-06-25 | Third Floor Materials, Inc. | Surface with tunable emissivity based on epsilon-near-zero materials and patterned substrates |
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RU2754985C2 (ru) | 2021-09-08 |
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WO2018209250A1 (en) | 2018-11-15 |
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