JP7193729B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Description
前記基板を加熱して前記有機膜をガス化させ、当該ガスを前記被覆膜を透過させて前記凹部内から除去し、前記凹部と前記被覆膜とに囲まれる封止空間を形成する工程と、
前記封止空間に処理ガスを供給するガス供給工程と、
前記基板に光照射して前記封止空間の前記処理ガスを活性化し、当該封止空間における前記有機膜の残渣と活性化した処理ガスとの反応による生成物のガスを、前記被覆膜を透過させて除去する光照射工程と、
を備え、
前記光照射工程は、前記基板の周囲における前記処理ガスの分圧を1.33×10 3 Pa~3.99×10 3 Paにする工程を含む。
図3A、図3Bは、当該他の工程を示しており、具体的に説明すると、先ずウエハWにO2ガスを供給し、ウエハWの周囲の圧力(処理容器内の圧力)を比較的高い第2の圧力、具体的には例えば1.33×104Pa~1.33×105Paとする。そのような圧力とされることで、O2ガスは効率良くキャップ膜14を透過して封止空間15に供給され、封止空間15におけるO2ガスの分圧が比較的高くなる(図3A)。ウエハWの周囲の圧力を上記の第2の圧力としている間は、VUVはウエハWの周囲のガスに吸収されてウエハWに到達し難いため、当該VUVの照射を行わない。
続いて、既述の本開示の実施の形態に関連して行われた評価試験について説明する。
(評価試験1)
図1A~図1Dで説明した、ウエハWの凹部12内へのポリ尿素膜13の形成、SiO2であるキャップ膜14の形成、ポリ尿素膜13を除去するアニール処理を行った。この一連の処理におけるキャップ膜14の形成後でアニール処理前、アニール処理後の各々で、電子顕微鏡(SEM)を用いてウエハWの縦断側面の画像を取得した。さらに、このアニール処理前のウエハWの表面及びアニール処理後のウエハWの表面について、FT-IR(フーリエ変換赤外分光法)による分析と、XPS(X線光電分光法)による分析とを行った。なお、上記の一連の処理において、ポリ尿素膜13については、凹部12の外側の高さよりも当該ポリ尿素膜13の表面が低くなるように凹部12内に形成し、キャップ膜14については膜厚が2nmとなるように成膜した。
評価試験2として、評価試験1と同様にウエハWの凹部12内へのポリ尿素膜13の形成、キャップ膜14の形成、ポリ尿素膜13を除去するアニール処理を順に行った。その後は評価試験1とは異なり、そのようにアニール処理されたウエハWを処理容器内に格納して150℃に加熱し、処理容器内にエア及びN2ガスを供給すると共に、処理容器内の圧力を200Torr(2.66×104Pa)とした。そのような状態でVUVをウエハWに5分間照射し、評価試験1と同様にXPSによる分析を行った。なお、処理容器内へ供給するN2ガスの流量、エアの流量は各々1slmとした。
評価試験3(3-1~3-8)として、表面にポリ尿素膜が形成されたウエハWを処理容器内にて150℃で加熱すると共に当該ウエハWの表面にVUVを照射する処理を行った。この処理は複数のウエハWについて行った。そして各ウエハWを処理するにあたり、処理容器内にはN2ガスのみか、あるいはN2ガス及びエアの供給を行った。またウエハW毎に、処理容器内へ供給するガスの流量、処理容器内の全圧、酸素の分圧及び処理時間についての組み合わせを変更して処理を行った。そして、処理後の各ウエハWについて、ポリ尿素膜の膜厚維持率(処理後の膜厚/処理前の膜厚)×100を算出した。各評価試験3-1~3-8の処理条件を以下に示す。なお、各評価試験3-1~3-8は、ウエハWの処理時間を1分、3分、5分に夫々設定して行っている。
12 凹部
13 ポリ尿素膜
14 被覆膜
15 封止空間
16 残渣
Claims (7)
- 内部に有機膜が形成された凹部を表面に備える基板に、当該基板の表面を覆う被覆膜を形成する工程と、
前記基板を加熱して前記有機膜をガス化させ、当該ガスを前記被覆膜を透過させて前記凹部内から除去し、前記凹部と前記被覆膜とに囲まれる封止空間を形成する工程と、
前記封止空間に処理ガスを供給するガス供給工程と、
前記基板に光照射して前記封止空間の前記処理ガスを活性化し、当該封止空間における前記有機膜の残渣と活性化した処理ガスとの反応による生成物のガスを、前記被覆膜を透過させて除去する光照射工程と、
を備え、
前記光照射工程は、前記基板の周囲における前記処理ガスの分圧を1.33×10 3 Pa~3.99×10 3 Paにする工程を含む基板処理方法。 - 前記被覆膜は、無機酸化物である請求項1記載の基板処理方法。
- 前記無機酸化物は、シリコン酸化物である請求項2記載の基板処理方法。
- 前記処理ガスは、酸素を含むガスである請求項1ないし3のいずれか一つに記載の基板処理方法。
- 前記光は真空紫外光である請求項1ないし4のいずれか一つに記載の基板処理方法。
- 前記ガス供給工程に続いて前記光照射工程が行われ、
前記光照射工程は前記基板の周囲の圧力を第1の圧力とする工程を含み、
前記ガス供給工程は、前記基板の周囲の圧力を前記第1の圧力よりも高い第2の圧力とする工程を含む請求項1ないし5のいずれ一つに記載の基板処理方法。 - 内部に有機膜が形成された凹部を表面に備える基板に、当該基板の表面を覆う被覆膜を形成する被覆膜形成部と、
前記有機膜をガス化させ、当該ガスを前記被覆膜を透過させて前記凹部内から除去し、前記凹部と前記被覆膜とに囲まれる封止空間を形成するために、前記基板を加熱する加熱部と、
前記封止空間に処理ガスを供給するガス供給部と、
前記封止空間の前記処理ガスを活性化させて、当該封止空間における前記有機膜の残渣と活性化した当該処理ガスとの反応による生成物のガスを、前記被覆膜を透過させて除去するために、前記基板に光照射する光照射部と、
を備え、
前記ガス供給部は、前記光照射部による前記基板への光照射中に、前記基板の周囲における前記処理ガスの分圧が1.33×10 3 Pa~3.99×10 3 Paとなるように前記処理ガスを供給する基板処理装置。
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