JP7187303B2 - 温度制御装置 - Google Patents
温度制御装置 Download PDFInfo
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- JP7187303B2 JP7187303B2 JP2018243709A JP2018243709A JP7187303B2 JP 7187303 B2 JP7187303 B2 JP 7187303B2 JP 2018243709 A JP2018243709 A JP 2018243709A JP 2018243709 A JP2018243709 A JP 2018243709A JP 7187303 B2 JP7187303 B2 JP 7187303B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Control Of Temperature (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
1 処理装置
2 第1のチラー(第1温度制御部)
3 第2のチラー(第2温度制御部)
21 ポンプ
31 ポンプ
4 流路
4b1,4b2,4d,4g,4i1,4i2 分岐部
6 制御装置(制御部)
W ウェハ
13 基台(被温度調整部材)
13a 流入口
13b 流出口
13c 部材流路
41 第1流路
42 第2流路
43 第3流路
44 第4流路
51 三方弁(第1三方弁)
52 三方弁(第2三方弁)
53 三方弁(第3三方弁)
54 三方弁(第1三方弁)
55 三方弁(第2三方弁)
56 三方弁(第3三方弁)
Claims (3)
- 流体入口及び流体出口を有する内部流路を含む対象物体の温度を制御するための温度制御装置であって、
流体入口及び流体出口を有し、前記流体入口から流入した流体の温度を第1温度に調節する第1温度調節部と、
流体入口及び流体出口を有し、前記流体入口から流入した流体の温度を前記第1温度とは異なる第2温度に調節する第2温度調節部と、
複数のバルブと、
前記複数のバルブの切り替えを制御するように構成される制御部と、を備え、
前記複数のバルブは、
第1ポート、第2ポート及び第3ポートを有する第1三方弁であり、前記第1三方弁の第1ポートは、前記内部流路の流体入口に接続され、前記第1三方弁の第2ポートは、前記第1温度調節部の流体出口に接続され、前記第1三方弁の第3ポートは、前記第1温度調節部の流体入口に接続される、第1三方弁と、
第1ポート、第2ポート及び第3ポートを有する第2三方弁であり、前記第2三方弁の第1ポートは、前記内部流路の流体入口に接続され、前記第2三方弁の第2ポートは、前記第2温度調節部の流体出口に接続され、前記第2三方弁の第3ポートは、前記第2温度調節部の流体入口に接続される、第2三方弁と、
第1ポート、第2ポート及び第3ポートを有する第3三方弁であり、前記第3三方弁の第1ポートは、前記内部流路の流体出口に接続され、前記第3三方弁の第2ポートは、前記第1温度調節部の流体入口に接続され、前記第3三方弁の第3ポートは、前記第2温度調節部の流体入口に接続される、第3三方弁と、を含み、
前記制御部は、
第1のモードにおいて、第1流体を前記内部流路の流体出口から前記第1温度調節部を介して前記内部流路の流体入口に流すとともに、第2流体を前記第2三方弁と前記第2温度調節部との間で循環するように前記第1三方弁、前記第2三方弁及び前記第3三方弁を制御し、
第2のモードにおいて、前記第2流体を前記内部流路の流体出口から前記第2温度調節部を介して前記内部流路の流体入口に流すとともに、前記第1流体を前記第1三方弁と前記第1温度調節部との間で循環するように前記第1三方弁、前記第2三方弁及び前記第3三方弁を制御するように構成される、
温度制御装置。 - 流体入口及び流体出口を有する内部流路を含む対象物体の温度を制御するための温度制御装置であって、
流体入口及び流体出口を有し、前記流体入口から流入した流体の温度を第1温度に調節する第1温度調節部と、
流体入口及び流体出口を有し、前記流体入口から流入した流体の温度を前記第1温度とは異なる第2温度に調節する第2温度調節部と、
複数のバルブと、
前記複数のバルブの切り替えを制御するように構成される制御部と、を備え、
前記複数のバルブは、
第1ポート、第2ポート及び第3ポートを有する第1三方弁であり、前記第1三方弁の第1ポートは、前記内部流路の流体出口に接続され、前記第1三方弁の第2ポートは、前記第1温度調節部の流体出口に接続され、前記第1三方弁の第3ポートは、前記第1温度調節部の流体入口に接続される、第1三方弁と、
第1ポート、第2ポート及び第3ポートを有する第2三方弁であり、前記第2三方弁の第1ポートは、前記内部流路の流体出口に接続され、前記第2三方弁の第2ポートは、前記第2温度調節部の流体出口に接続され、前記第2三方弁の第3ポートは、前記第2温度調節部の流体入口に接続される、第2三方弁と、
第1ポート、第2ポート及び第3ポートを有する第3三方弁であり、前記第3三方弁の第1ポートは、前記内部流路の流体入口に接続され、前記第3三方弁の第2ポートは、前記第1温度調節部の流体出口に接続され、前記第3三方弁の第3ポートは、前記第2温度調節部の流体出口に接続される、第3三方弁と、を含み、
前記制御部は、
第1のモードにおいて、第1流体を前記内部流路の流体出口から前記第1温度調節部を介して前記内部流路の流体入口に流すとともに、第2流体を前記第2三方弁と前記第2温度調節部との間で循環するように前記第1三方弁、前記第2三方弁及び前記第3三方弁を制御し、
第2のモードにおいて、前記第2流体を前記内部流路の流体出口から前記第2温度調節部を介して前記内部流路の流体入口に流すとともに、前記第1流体を前記第1三方弁と前記第1温度調節部との間で循環するように前記第1三方弁、前記第2三方弁及び前記第3三方弁を制御するように構成される、
温度制御装置。 - 前記対象物体は、
基板を載置する載置台である、
請求項1又は請求項2に記載の温度制御装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018243709A JP7187303B2 (ja) | 2018-12-26 | 2018-12-26 | 温度制御装置 |
US16/714,910 US20200211872A1 (en) | 2018-12-26 | 2019-12-16 | Temperature controlling apparatus and method of controlling the temperature controlling apparatus |
KR1020190169050A KR20200080159A (ko) | 2018-12-26 | 2019-12-17 | 온도 조정 장치 및 온도 조정 장치의 제어 방법 |
CN201911366531.1A CN111383963A (zh) | 2018-12-26 | 2019-12-26 | 温度调整装置和温度调整装置的控制方法 |
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Application Number | Priority Date | Filing Date | Title |
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JP2018243709A JP7187303B2 (ja) | 2018-12-26 | 2018-12-26 | 温度制御装置 |
Publications (3)
Publication Number | Publication Date |
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JP2020107684A JP2020107684A (ja) | 2020-07-09 |
JP2020107684A5 JP2020107684A5 (ja) | 2021-11-11 |
JP7187303B2 true JP7187303B2 (ja) | 2022-12-12 |
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US (1) | US20200211872A1 (ja) |
JP (1) | JP7187303B2 (ja) |
KR (1) | KR20200080159A (ja) |
CN (1) | CN111383963A (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009177070A (ja) | 2008-01-28 | 2009-08-06 | Toshiba Corp | 半導体製造装置 |
JP2013534716A (ja) | 2010-05-24 | 2013-09-05 | ラム リサーチ コーポレーション | 半導体基板サポートの温度制御のための装置および方法 |
Family Cites Families (16)
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US4778532A (en) * | 1985-06-24 | 1988-10-18 | Cfm Technologies Limited Partnership | Process and apparatus for treating wafers with process fluids |
JPH05198582A (ja) * | 1992-01-23 | 1993-08-06 | Fujitsu Ltd | 半導体装置の製造装置及び電極の温度制御方法 |
CN1162500A (zh) * | 1996-02-29 | 1997-10-22 | 普拉塞尔技术有限公司 | 大容量的真空压力摆动吸附方法和*** |
US20040065540A1 (en) * | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
US20050005845A1 (en) * | 2003-05-20 | 2005-01-13 | John Zajac | Apparatus and method for in-situ chamber cleaning in a compound semiconductor etching system |
US7971601B2 (en) * | 2007-07-02 | 2011-07-05 | Grundfos Pumps Corporation | Water circulation system valve assemblies having water temperature control |
US8596336B2 (en) * | 2008-06-03 | 2013-12-03 | Applied Materials, Inc. | Substrate support temperature control |
JP2010010397A (ja) * | 2008-06-27 | 2010-01-14 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP5912439B2 (ja) * | 2011-11-15 | 2016-04-27 | 東京エレクトロン株式会社 | 温度制御システム、半導体製造装置及び温度制御方法 |
JP5951384B2 (ja) * | 2012-07-20 | 2016-07-13 | 東京エレクトロン株式会社 | 温度制御システムへの温調流体供給方法及び記憶媒体 |
JP6570390B2 (ja) * | 2015-09-24 | 2019-09-04 | 東京エレクトロン株式会社 | 温度調整装置及び基板処理装置 |
US10515786B2 (en) * | 2015-09-25 | 2019-12-24 | Tokyo Electron Limited | Mounting table and plasma processing apparatus |
WO2017068649A1 (ja) * | 2015-10-20 | 2017-04-27 | 三菱電機株式会社 | ヒートポンプシステム |
JP6639193B2 (ja) * | 2015-11-06 | 2020-02-05 | 伸和コントロールズ株式会社 | 温度制御装置 |
KR101739369B1 (ko) * | 2016-03-31 | 2017-05-24 | 주식회사 에프에스티 | 반도체 공정 설비용 온도 제어시스템 |
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2018
- 2018-12-26 JP JP2018243709A patent/JP7187303B2/ja active Active
-
2019
- 2019-12-16 US US16/714,910 patent/US20200211872A1/en not_active Abandoned
- 2019-12-17 KR KR1020190169050A patent/KR20200080159A/ko not_active Application Discontinuation
- 2019-12-26 CN CN201911366531.1A patent/CN111383963A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009177070A (ja) | 2008-01-28 | 2009-08-06 | Toshiba Corp | 半導体製造装置 |
JP2013534716A (ja) | 2010-05-24 | 2013-09-05 | ラム リサーチ コーポレーション | 半導体基板サポートの温度制御のための装置および方法 |
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CN111383963A (zh) | 2020-07-07 |
JP2020107684A (ja) | 2020-07-09 |
KR20200080159A (ko) | 2020-07-06 |
US20200211872A1 (en) | 2020-07-02 |
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