JP7178215B2 - Inorganic light emitting device - Google Patents
Inorganic light emitting device Download PDFInfo
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- 239000000463 material Substances 0.000 claims description 81
- 229910001507 metal halide Inorganic materials 0.000 claims description 23
- 150000005309 metal halides Chemical class 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 229910001502 inorganic halide Inorganic materials 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 3
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 150000001450 anions Chemical group 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 62
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000005300 metallic glass Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NSABRUJKERBGOU-UHFFFAOYSA-N iridium(3+);2-phenylpyridine Chemical compound [Ir+3].[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 NSABRUJKERBGOU-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- -1 poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L tin(ii) bromide Chemical compound Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 description 2
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- GUVUOGQBMYCBQP-UHFFFAOYSA-N dmpu Chemical compound CN1CCCN(C)C1=O GUVUOGQBMYCBQP-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007610 electrostatic coating method Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
Description
本発明は、発光素子、特に無機発光素子に関する。 The present invention relates to light emitting devices, particularly inorganic light emitting devices.
有機ＥＬ表示装置は、高精細、高応答速度、高コントラスト、広視野角、薄型などの表示装置に期待される要素を備えており、液晶表示装置及びプラズマパネル表示装置に続く次世代の表示装置として注目されている。有機ＥＬ表示装置に用いられる有機ＥＬパネルは、有機材料に電流を流すと発光するエレクトロルミネッセンスを利用した発光素子（有機ＥＬ素子）を、ガラス板などの基板に配置し、格子状に配置した電極（配線）によって発光素子を制御することで画像を表示させることができる。 Organic EL display devices are equipped with the elements expected of display devices, such as high definition, high response speed, high contrast, wide viewing angle, and thinness. is attracting attention as An organic EL panel used in an organic EL display device is a light-emitting element (organic EL element) that emits light when an electric current is passed through an organic material. An image can be displayed by controlling the light-emitting element with (wiring).
従来の有機ＥＬの発光層の発光材料として、トリス（８－ヒドロキシキノリン）アルミニウム（Ａｌｑ３）や、トリス(２－フェニルピリジナト)イリジウム(III)（Ｉｒ（ｐｐｙ）３）などが用いられてきた。しかしながらこれらの発光材料を用いた発光素子は、量子効率がそれほど高いものではなく、かつ広い色域を実現できるものではなかった。 Tris(8-hydroxyquinoline)aluminum (Alq 3 ), tris(2-phenylpyridinato)iridium(III) (Ir(ppy) 3 ), etc. are used as light-emitting materials for conventional organic EL light-emitting layers. It's here. However, light-emitting devices using these light-emitting materials do not have a very high quantum efficiency and cannot achieve a wide color gamut.
また、従来の有機ＥＬは、有機化合物を使用していることから、短寿命であるという問題があった。 In addition, conventional organic ELs have a problem of short life due to the use of organic compounds.
さらに、従来の有機ＥＬにおける電子注入層は、注入障壁が高く、電子の注入効率が低いという問題があった。 Furthermore, the electron injection layer in the conventional organic EL has a problem that the injection barrier is high and the electron injection efficiency is low.
本発明は、塗布により製造でき、寿命が長く、高い量子効率を有し、広い色域を実現でき、さらに高い電子の注入効率を有する発光素子を提供することを目的とする。 An object of the present invention is to provide a light-emitting device that can be manufactured by coating, has a long life, has high quantum efficiency, can realize a wide color gamut, and has high electron injection efficiency.
本発明者は、鋭意検討を行った結果、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））を、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高くすること、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））を、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低くすること、の両方またはどちらか一方により上記の課題を解決できることを見出し、本発明を完成させるに至った。 As a result of intensive studies, the present inventors have found that the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is determined by the conduction of the light-emitting material contained in the light-emitting layer. The energy level (Ec (EML)) of the lower end of the band is higher than the energy level (Ec (EML)) of the lower end of the band, and the energy level (Ev (ETL)) of the upper end of the valence band of the electron transporting material contained in the electron transporting layer is higher than the energy level (Ev (ETL)) of the upper end of the valence band contained in the light emitting layer. The present inventors have found that the above problems can be solved by lowering the energy level (Ev (EML)) at the top of the valence band of the light-emitting material, or either one of them, and have completed the present invention.
上記の通り、本発明の発光素子は、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高いこと、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低いこと、の両方またはどちらか一方を有することを特徴とする。 As described above, in the light-emitting device of the present invention, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the conduction band of the light-emitting material contained in the light-emitting layer. The energy level (Ec (EML)) at the lower end is higher than the energy level (Ec (EML)) at the lower end, and the energy level (Ev (ETL)) at the upper end of the valence band of the electron-transporting material contained in the electron-transporting layer is the light emission contained in the light-emitting layer. and/or lower than the energy level (Ev(EML)) at the top of the valence band of the material.
本発明の発光素子の発光材料および、正孔輸送材料と電子輸送材料の両方またはどちらか一方は、無機ハロゲン化物であることが好ましい。 The light-emitting material of the light-emitting device of the present invention and both or one of the hole-transporting material and the electron-transporting material are preferably inorganic halides.
また、本発明の発光素子の無機ハロゲン化物の少なくとも一つは、結晶性の金属ハロゲン化物であることが好ましい。 At least one of the inorganic halides in the light-emitting device of the present invention is preferably a crystalline metal halide.
さらに、本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料は、式ＡｍＢｎＸｐで表される金属ハロゲン化物であることが好ましい（式中、ＡはＣｓ＋、Ｒｂ＋、Ｋ＋、Ｎａ＋，Ｌｉ＋、からなる群から選択される陽イオンであり、ＢはＰｂ２＋、Ｓｎ２＋、Ｇｅ２＋からなる群から選択される陽イオンであり、ＸはＣｌ－、Ｂｒ－、Ｉ－からなる群から選択される陰イオンである。ｍは０以上の整数、ｎは正の整数、ｐは２以上の整数である）。
なお、ｍ、ｎ、ｐは分数または小数で記すことも可能であるが、整数で表示した形式に読み替えるものとする。また、一般に金属ハロゲン化物の元素組成は組成のばらつきなどにより厳密に整数にならない場合があるが、本発明の金属ハロゲン化物はこれらのばらつきや誤差を許容する。
Furthermore, the hole-transporting material, the light-emitting material and the electron-transporting material of the light-emitting device of the present invention are preferably metal halides represented by the formula A m B n X p (wherein A is Cs + , Rb + , K + , Na + , Li + , B is a cation selected from the group consisting of Pb 2+ , Sn 2+ , Ge 2+ , X is Cl − , is an anion selected from the group consisting of Br − and I − , m is an integer of 0 or more, n is a positive integer, and p is an integer of 2 or more).
It should be noted that m, n, and p can be written in fractions or decimals, but they should be read as integers. Also, in general, the elemental composition of metal halides may not be a strictly integer due to variations in composition, but the metal halides of the present invention allow for these variations and errors.
さらに、本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料は、式Ａ１Ｂ１Ｘ３または式Ａ４Ｂ１Ｘ６で表される金属ハロゲン化物であることが好ましい。 Furthermore, the hole-transporting material, light-emitting material and electron-transporting material of the light-emitting device of the present invention are preferably metal halides represented by the formula A 1 B 1 X 3 or A 4 B 1 X 6 .
また、本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料は、ＣｓＰｂＣｌ３、ＣｓＰｂＢｒ３、ＣｓＰｂＩ３、Ｃｓ４ＰｂＣｌ６、Ｃｓ４ＰｂＢｒ６、Ｃｓ４ＰｂＩ６、ＣｓＳｎＣｌ３、ＣｓＳｎＢｒ３、ＣｓＳｎＩ３、Ｃｓ４ＳｎＣｌ６、Ｃｓ４ＳｎＢｒ６、Ｃｓ４ＳｎＩ６、ＰｂＣｌ２、ＰｂＢｒ２、ＰｂＩ２、ＳｎＣｌ２、ＳｎＢｒ２、ＳｎＩ２、Ｃｕ－Ｓｎ－Ｉからなる群から選択される金属ハロゲン化物であることがより好ましい。 The hole-transporting material, light-emitting material and electron-transporting material of the light-emitting device of the present invention are CsPbCl 3 , CsPbBr 3 , CsPbI 3 , Cs 4 PbCl 6 , Cs 4 PbBr 6 , Cs 4 PbI 6 , CsSnCl 3 and CsSnBr 3 . , CsSnI 3 , Cs 4 SnCl 6 , Cs 4 SnBr 6 , Cs 4 SnI 6 , PbCl 2 , PbBr 2 , PbI 2 , SnCl 2 , SnBr 2 , SnI 2 , Cu—Sn—I Halides are more preferred.
さらに、本発明の発光素子は、電子注入層をさらに有することが好ましい。 Furthermore, the light emitting device of the present invention preferably further has an electron injection layer.
また、本発明の発光素子の電子注入層は、有機溶媒に溶解した金属ナトリウムから製造されることがより好ましい。 Further, the electron injection layer of the light emitting device of the present invention is more preferably manufactured from metallic sodium dissolved in an organic solvent.
本発明によれば、塗布により製造でき、寿命が長く、高い量子効率を有し、広い色域を実現でき、さらに高い電子の注入効率を有する発光素子を提供することができる。 According to the present invention, it is possible to provide a light-emitting device that can be manufactured by coating, has a long life, has high quantum efficiency, can realize a wide color gamut, and has high electron injection efficiency.
以下、本発明を実施するための形態について詳細に説明する。本発明は、以下の実施形態に限定されるものではなく、本発明の効果を阻害しない範囲で適宜変更を加えて実施することができる。 DETAILED DESCRIPTION OF THE INVENTION Embodiments for carrying out the present invention will be described in detail below. The present invention is not limited to the following embodiments, and can be implemented with appropriate modifications within the scope that does not impair the effects of the present invention.
［発光素子］
図１は、本発明の発光素子の一態様を示す図である。この態様では、上から順に、封止材（Ｅｎｃａｐｓｕｌａｎｔ）、陰極（Ｃａｔｈｏｄｅ）、電子輸送層（Ｅｌｅｃｔｒｏｎ Ｔｒａｎｓｐｏｒｔ Ｌａｙｅｒ、ＥＴＬ）、発光層（Ｅｍｉｓｓｉｖｅ Ｌａｙｅｒ、ＥＭＬ）、正孔輸送層（Ｈｏｌｅ Ｔｒａｎｓｐｏｒｔ Ｌａｙｅｒ、ＨＴＬ）、陽極（Ａｎｏｄｅ）、基板（Ｓｕｂｓｔｒａｔｅ）で発光素子が構成されている。陰極と電子輸送層の間には電子注入層（Ｅｌｅｃｔｒｏｎ Ｉｎｊｅｃｔｉｏｎ Ｌａｙｅｒ、ＥＩＬ）があってもよく、正孔輸送層と陽極の間には、正孔注入層（Ｈｏｌｅ Ｉｎｊｅｃｔｉｏｎ Ｌａｙｅｒ、ＨＩＬ）があってもよい。かつ、この他の複数の層を有していてもよい。
[Light emitting element]
FIG. 1 is a diagram showing one mode of the light-emitting element of the present invention. In this aspect, from the top, the encapsulant, the cathode, the electron transport layer (ETL), the light emitting layer (Emissive Layer, EML), the hole transport layer (Hole Transport Layer, HTL ), an anode, and a substrate constitute a light-emitting element. There may be an electron injection layer (EIL) between the cathode and the electron transport layer, and a hole injection layer (HIL) between the hole transport layer and the anode. good too. In addition, it may have a plurality of other layers.
陽極に高電位が印加されるとともに陰極に低電位が印加されると、正孔と電子がそれぞれ正孔輸送層と電子輸送層を介して発光層に移動し、発光層で互いに結合して発光する。電子輸送層は、電子輸送能力がある有機物質や、電子輸送能力がある有機ホスト物質にＬｉ、Ｎａ、Ｋ、又はＣｓのようなアルカリ金属およびアルカリ金属からなる化合物、又はＭｇ、Ｓｒ、Ｂａ、又はＲａのようなアルカリ土類金属およびアルカリ土類金属からなる化合物がドープされた有機層であってもよいが、これに限定されない。また電子輸送材料として、結晶性の金属ハロゲン化物やアモルファス金属ハロゲン化物を用いることも可能である。アモルファス金属ハロゲン化物の例としては、Ｃｕ－Ｓｎ－Ｉが挙げられる。正孔輸送層は、正孔輸送能力を有する有機物質や、正孔輸送能力を有する有機ホスト物質にドーパントがドープされた有機層であってもよいが、これに限定されない。また正孔輸送材料として、結晶性の金属ハロゲン化物やアモルファス金属ハロゲン化物を用いることも可能である。なお本発明におけるアルカリ土類金属とはベリリウムとマグネシウムを含む第２族元素を表す。 When a high potential is applied to the anode and a low potential is applied to the cathode, holes and electrons move to the light-emitting layer through the hole-transporting layer and the electron-transporting layer, respectively, and combine with each other in the light-emitting layer to emit light. do. The electron transport layer is composed of an organic material capable of transporting electrons, an organic host material capable of transporting electrons, an alkali metal such as Li, Na, K, or Cs, an alkali metal compound, or Mg, Sr, Ba, Alternatively, it may be an organic layer doped with an alkaline earth metal such as Ra and a compound composed of an alkaline earth metal, but is not limited thereto. It is also possible to use a crystalline metal halide or an amorphous metal halide as the electron transport material. Examples of amorphous metal halides include Cu--Sn--I. The hole-transporting layer may be an organic layer having a hole-transporting ability or an organic layer obtained by doping an organic host material having a hole-transporting ability with a dopant, but is not limited thereto. It is also possible to use a crystalline metal halide or an amorphous metal halide as the hole transport material. The alkaline earth metals in the present invention represent group 2 elements including beryllium and magnesium.
電子注入層は、例えば、ＬｉＦ又はＬｉ２Ｏ、あるいはＬｉ、Ｎａ、Ｃａ、Ｍｇ、Ｓｒ、Ｂａなどのアルカリ金属又はアルカリ土類金属などの無機物から形成することができる。正孔注入層は、正孔注入物質をホストとし、ｐ型ドーパントを含むことができる。 The electron injection layer can be formed from, for example, LiF or Li 2 O, or an inorganic material such as an alkali metal such as Li, Na, Ca, Mg, Sr, Ba, or an alkaline earth metal. The hole-injecting layer is hosted by a hole-injecting material and can include a p-type dopant.
電極材料の例としては、Ａｇ、Ａｌ、Ｍｇ、Ｃａなどの金属、Ｍｇ－Ａｇなどの合金、酸化インジウムスズ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ、ＩＴＯ）、ＩＺＯ（Ｉｎ２Ｏ３－ＺｎＯ）、ＦＴＯ（フッ素ドープ酸化スズ）などの酸化物などが挙げられる。一般に透明金属酸化物が陽極に、金属が陰極に用いられるが、逆でもよく、透明金属酸化物を陰極に、金属を陽極に用いてもよい。 Examples of electrode materials include metals such as Ag, Al, Mg, and Ca, alloys such as Mg—Ag, indium tin oxide (ITO), IZO (In 2 O 3 —ZnO), FTO (fluorine-doped tin oxide) and other oxides. In general, a transparent metal oxide is used for the anode and a metal for the cathode, but the reverse is also possible, and a transparent metal oxide may be used for the cathode and a metal for the anode.
ＭｇやＣａなどの仕事関数の低い金属は、ＥＩＬとしての効果も有している。一方でＭｇやＣａなどの金属は機械的強度が低いので、一般的にはＡｌなどで補強を行う。 A metal with a low work function, such as Mg or Ca, also has an effect as an EIL. On the other hand, since metals such as Mg and Ca have low mechanical strength, they are generally reinforced with Al or the like.
また、ＡｌやＡｇは反射層を兼ねている。光の取出し方向は、一般に反射層と反対側に設計されるが、陰極側と陽極側のいずれでもよい。 Al and Ag also serve as a reflective layer. The light extraction direction is generally designed on the side opposite to the reflective layer, but may be either the cathode side or the anode side.
透明有機発光ダイオード（透明ＯＬＥＤ）を作成する際には、Ｍｇ－Ａｇ膜、薄いＡｇ膜などが用いられる。Ａｇ膜の下に、ＩＴＯ膜などがあってもよく、Ａｇ膜を上下からＩＴＯ膜で挟み込んだ構造であってもよい。 A Mg—Ag film, a thin Ag film, or the like is used to produce a transparent organic light-emitting diode (transparent OLED). An ITO film or the like may be provided under the Ag film, or a structure in which the Ag film is sandwiched between ITO films from above and below may be used.
また、上記の材料による膜は、一般には真空成膜で製造されるが、ナノサイズに微細化し、溶媒に分散させたインクから製膜させることも可能である。特に金属ハロゲン化物はその多くが、原料を溶媒に溶解させることで得られたインクから製膜することが可能である。インクを用いることで、種々の塗布法の適用が可能になる。塗布法の例としては具体的には、スピンコート法、インクジェット法、静電塗布法、超音波霧化を用いる方法、スリットコート法、ダイコート法、スクリーン印刷法等を挙げることができる。 Films made of the above materials are generally produced by vacuum film formation, but it is also possible to form films from ink that has been made nano-sized and dispersed in a solvent. In particular, many metal halides can be formed into a film from an ink obtained by dissolving raw materials in a solvent. The use of ink enables application of various coating methods. Specific examples of coating methods include a spin coating method, an inkjet method, an electrostatic coating method, a method using ultrasonic atomization, a slit coating method, a die coating method, and a screen printing method.
本発明の発光素子の一態様では、正孔輸送層に含有される正孔輸送材料の伝導体下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導体下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高いことを特徴とする。このとき、Ｅｃ（ＨＴＬ）－Ｅｃ（ＥＭＬ）の値は、ＥＭＬ上の電子が熱で励起されたときにこの障壁を乗り越えられる数を十分に小さくするために、０．１ｅＶ以上であることが好ましく、０．５ｅＶ以上であることがより好ましく、１．０ｅＶ以上であることが更に好ましい。 In one aspect of the light-emitting device of the present invention, the energy level (Ec(HTL)) of the lower conductor end of the hole-transporting material contained in the hole-transporting layer is equal to the lower conductor end of the light-emitting material contained in the light-emitting layer. is higher than the energy level (Ec(EML)) of At this time, the value of Ec(HTL)-Ec(EML) should be 0.1 eV or more in order to sufficiently reduce the number of electrons on the EML that can overcome this barrier when thermally excited. It is preferably 0.5 eV or more, more preferably 1.0 eV or more.
また本発明の発光素子の一態様では、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低いことを特徴とする。このとき、Ｅｖ（ＥＭＬ）－Ｅｖ（ＥＴＬ）の値は、ＥＭＬ上の電子が熱で励起されたときにこの障壁を乗り越えられる数を十分に小さくするために、０．１ｅＶ以上であることが好ましく、０．５ｅＶ以上であることがより好ましく、１．０ｅＶ以上であることが更に好ましい。 In one aspect of the light-emitting device of the present invention, the energy level (Ev(ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is the valence band of the light-emitting material contained in the light-emitting layer. It is characterized by being lower than the upper end energy level (Ev(EML)). At this time, the value of Ev(EML)−Ev(ETL) should be 0.1 eV or more in order to sufficiently reduce the number of electrons on the EML that can overcome this barrier when thermally excited. It is preferably 0.5 eV or more, more preferably 1.0 eV or more.
さらに本発明の発光素子の一態様では、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高く、さらに電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低いことを特徴とする。 Furthermore, in one aspect of the light-emitting device of the present invention, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the conduction band of the light-emitting material contained in the light-emitting layer. Emission in which the energy level (Ev (ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is higher than the energy level (Ec (EML)) at the lower end and is contained in the light-emitting layer It is characterized by being lower than the energy level (Ev(EML)) at the top of the valence band of the material.
上記により、「ＥＭＬとＨＴＬの界面において正孔移動度が電子移動度より早いこと、ＥＭＬとＥＴＬの界面において電子移動度が正孔移動度より早いこと、の両方またはどちらか一方を満たす必要がある」という条件を満足することができる。すなわち、ｐ型やｎ型ではない両性半導体であっても、エネルギー準位を適切な組み合わせにすることにより、本発明の実施が可能となる。
図１には本発明の発光素子のうち発光層が一層の場合の形態を例示したが、本発明はこれに限定されない。発光層を複数有していてもよく、発光層と別な発光層の間に電荷発生層（Ｃｈａｒｇｅ Ｇｅｎｅｒａｔｉｏｎ Ｌａｙｅｒ、ＣＧＬ）を有していても良い。発光層を複数有する場合の各々の発光層を構成する発光材料は、同一であっても良いが、異なっていても良く、一部が同一であっても良い。また、一つの発光層が複数の発光材料を含んでいても良い。単一の発光素子から複数の発光色が得られる発光素子を用いる場合には、カラーフィルター等との組み合わせにより、色情報を再現できる表示装置を構成することができる。
According to the above, it is necessary to satisfy both or one of the following: "The hole mobility is faster than the electron mobility at the interface between the EML and the HTL, and the electron mobility is faster than the hole mobility at the interface between the EML and the ETL." It is possible to satisfy the condition that there is In other words, the present invention can be practiced by appropriately combining energy levels even in amphoteric semiconductors that are neither p-type nor n-type.
FIG. 1 exemplifies the form of the light-emitting element of the present invention in which the light-emitting layer is a single layer, but the present invention is not limited to this. A plurality of light-emitting layers may be provided, and a charge generation layer (CGL) may be provided between the light-emitting layer and another light-emitting layer. When a plurality of light-emitting layers are provided, the light-emitting materials constituting each light-emitting layer may be the same, may be different, or may be partially the same. Also, one light-emitting layer may contain a plurality of light-emitting materials. In the case of using a light-emitting element that can emit light of a plurality of colors from a single light-emitting element, a display device capable of reproducing color information can be configured by combining with a color filter or the like.
また本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料は、無機ハロゲン化物であることが好ましく、アモルファス性の金属ハロゲン化物であってもよいが、結晶性の金属ハロゲン化物であることがより好ましい。本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料の態様として、式ＡｍＢｎＸｐで表される金属ハロゲン化物が挙げられる（記号の意味は前記と同様である）。式ＡｍＢｎＸｐで表される金属ハロゲン化物としては、式Ａ１Ｂ１Ｘ３または式Ａ４Ｂ１Ｘ６で表される金属ハロゲン化物が挙げられる。さらに本発明の発光素子の正孔輸送材料、発光材料および電子輸送材料の態様として、ＣｓＰｂＣｌ３、ＣｓＰｂＢｒ３、ＣｓＰｂＩ３、Ｃｓ４ＰｂＣｌ６、Ｃｓ４ＰｂＢｒ６、Ｃｓ４ＰｂＩ６、ＣｓＳｎＣｌ３、ＣｓＳｎＢｒ３、ＣｓＳｎＩ３、Ｃｓ４ＳｎＣｌ６、Ｃｓ４ＳｎＢｒ６、Ｃｓ４ＳｎＩ６、ＰｂＣｌ２、ＰｂＢｒ２、ＰｂＩ２、ＳｎＣｌ２、ＳｎＢｒ２、ＳｎＩ２からなる群から選択される金属ハロゲン化物が挙げられる。これらの無機ハロゲン化物の結晶構造の一例を図２に示す。 The hole-transporting material, the light-emitting material and the electron-transporting material of the light-emitting device of the present invention are preferably inorganic halides, and may be amorphous metal halides, but crystalline metal halides. is more preferable. Embodiments of the hole-transporting material, the light-emitting material and the electron-transporting material of the light-emitting device of the present invention include metal halides represented by the formula A m B n X p (the meanings of the symbols are the same as above). Metal halides represented by the formula A m B n X p include metal halides represented by the formula A 1 B 1 X 3 or A 4 B 1 X 6 . Furthermore, as embodiments of the hole transport material, the light emitting material and the electron transport material of the light emitting device of the present invention, CsPbCl 3 , CsPbBr 3 , CsPbI 3 , Cs 4 PbCl 6 , Cs 4 PbBr 6 , Cs 4 PbI 6 , CsSnCl 3 , CsSnBr 3 , CsSnI3 , Cs4SnCl6 , Cs4SnBr6 , Cs4SnI6 , PbCl2 , PbBr2 , PbI2 , SnCl2 , SnBr2 , SnI2 . . An example of the crystal structure of these inorganic halides is shown in FIG.
また、本発明の発光素子は、電子注入層をさらに有することが好ましい。その態様を図３に示す。さらに、本発明の発光素子の電子注入層は、金属ナトリウムが有機溶媒に溶解した材料から作製される金属ナトリウム膜が好ましく、金属ナトリウムを溶解する有機溶媒としては、例えば、Ｎ，Ｎ’－ジメチルエチレン尿素、Ｎ，Ｎ－ジメチルアセトアミド、Ｎ，Ｎ’-ジメチルプロピレン尿素が挙げられる。
本発明の発光素子は、高い量子効率を有し、広い色域を実現できる表示装置を実現することができる。また、種々の真空成膜法や塗布法で製造可能であり、素子の厚みが薄いことから、大面積で柔軟な表示装置の作製を可能にする。加えて、本発明の表示装置は、高精細、高応答速度、高コントラスト、広視野角、薄型などの有機ＥＬディスプレイが備える特長を兼ね備える。
Moreover, the light-emitting device of the present invention preferably further has an electron injection layer. This aspect is shown in FIG. Furthermore, the electron injection layer of the light-emitting device of the present invention is preferably a metallic sodium film prepared from a material in which metallic sodium is dissolved in an organic solvent. Ethylene urea, N,N-dimethylacetamide, N,N'-dimethylpropylene urea.
The light-emitting element of the present invention has high quantum efficiency and can realize a display device capable of realizing a wide color gamut. In addition, it can be manufactured by various vacuum film forming methods and coating methods, and since the thickness of the element is thin, it is possible to manufacture a large-area and flexible display device. In addition, the display device of the present invention has the features of an organic EL display such as high definition, high response speed, high contrast, wide viewing angle, and thinness.
以上、本発明の好ましい実施の形態について詳細に説明したが、当該技術分野における通常の知識を有する者であればこれから様々な変形及び均等な実施の形態が可能である。 Although the preferred embodiments of the present invention have been described in detail above, various modifications and equivalent embodiments are possible for those skilled in the art.
よって、本発明の権利範囲はこれに限定されるものではなく、特許請求の範囲で定義される本発明の基本概念を用いた当業者の様々な変形や改良形態も本発明に含まれる。 Therefore, the scope of rights of the present invention is not limited to this, and various modifications and improvements made by persons skilled in the art using the basic concept of the present invention defined in the claims are also included in the present invention.
以下に実施例を示して本発明をさらに具体的に説明するが、本発明はこれらの実施例により限定されるものではない。 EXAMPLES The present invention will be described in more detail with reference to examples below, but the present invention is not limited to these examples.
［実施例１］
（発光素子の作製－１）
以下の構成の発光素子を作製した。
ＩＴＯ／ＰｂＢｒ２／ＣｓＰｂＢｒ３／ＣｓＰｂＣｌ３／Ａｇ
（陽極／ＨＴＬ／ＥＭＬ／ＥＴＬ／陰極）
この発光素子は、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高く、その差は１．２ｅＶである。さらに電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低く、その差は０．６ｅＶであるという構成を有している。
また、正孔輸送材料、発光材料、電子輸送材料は、全て無機ハロゲン化物である。
両極に電圧を印加したところ、発光が確認された。
[Example 1]
(Fabrication of light-emitting device-1)
A light-emitting device having the following structure was manufactured.
ITO/ PbBr2 / CsPbBr3 / CsPbCl3 /Ag
(anode/HTL/EML/ETL/cathode)
In this light-emitting device, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the energy level of the bottom of the conduction band (Ec(HTL)) of the light-emitting material contained in the light-emitting layer. Ec(EML)) with a difference of 1.2 eV. Furthermore, the energy level (Ev(ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is equal to the energy level (Ev(EML)) at the top of the valence band of the light-emitting material contained in the light-emitting layer. ) with a difference of 0.6 eV.
In addition, the hole-transporting material, the light-emitting material, and the electron-transporting material are all inorganic halides.
Light emission was confirmed when a voltage was applied to both electrodes.
［実施例２］
（発光素子の作製－２）
以下の構成の発光素子を作製した。
ＩＴＯ／ＣｓＳｎＢｒ３／ＣｓＰｂＢｒ３／ＣｓＰｂＣｌ３／Ａｇ
（陽極／ＨＴＬ／ＥＭＬ／ＥＴＬ／陰極）
この発光素子は、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高くはなく、その差は０．１ｅＶ以下であるが、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低く、その差は０．７ｅＶであるという構成を有している。
また、正孔輸送材料、発光材料、電子輸送材料は、全て無機ハロゲン化物である。
両極に電圧を印加したところ、発光が確認された。
[Example 2]
(Fabrication of light-emitting device-2)
A light-emitting device having the following structure was manufactured.
ITO/ CsSnBr3 / CsPbBr3 / CsPbCl3 /Ag
(anode/HTL/EML/ETL/cathode)
In this light-emitting device, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the energy level of the bottom of the conduction band (Ec(HTL)) of the light-emitting material contained in the light-emitting layer. Ec (EML)) and the difference is 0.1 eV or less, but the energy level (Ev (ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is It is lower than the energy level (Ev(EML)) at the top of the valence band of the light-emitting material contained in the layer, with a difference of 0.7 eV.
In addition, the hole-transporting material, the light-emitting material, and the electron-transporting material are all inorganic halides.
Light emission was confirmed when a voltage was applied to both electrodes.
［実施例３］
（発光素子の作製－３）
以下の構成の発光素子を作製した。
ＩＴＯ／ＰＥＤＯＴ：ＰＳＳ／ＣｓＰｂＢｒ３／ＺｎＯ／Ａｌ
（陽極／ＨＴＬ／ＥＭＬ／ＥＴＬ／陰極）
ＰＥＤＯＴは、ポリ（3,4-エチレンジオキシチオフェン）を意味しており、ＰＳＳはポリスチレンスルホン酸を意味している。すなわちこれらは有機化合物である。
この発光素子は、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高く、その差は１．０ｅＶであり、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低く、その差は２．２ｅＶであるという構成を有している。
両極に電圧を印加したところ、発光が確認された。
[Example 3]
(Fabrication of light-emitting device-3)
A light-emitting device having the following structure was manufactured.
ITO/PEDOT:PSS/ CsPbBr3 /ZnO/Al
(anode/HTL/EML/ETL/cathode)
PEDOT means poly(3,4-ethylenedioxythiophene) and PSS means polystyrene sulfonic acid. they are organic compounds.
In this light-emitting device, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the energy level of the bottom of the conduction band (Ec(HTL)) of the light-emitting material contained in the light-emitting layer. Ec (EML)), the difference is 1.0 eV, and the energy level (Ev (ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is higher than the energy level (Ev (ETL)) contained in the light-emitting layer. It is lower than the energy level (Ev(EML)) of the upper end of the valence band of the light-emitting material, and the difference therebetween is 2.2 eV.
Light emission was confirmed when a voltage was applied to both electrodes.
［実施例４］
（発光素子の作製－４）
以下の構成の発光素子を作製した。
ＩＴＯ／Ｃｕ－Ｓｎ－Ｉ／ＣｓＰｂＢｒ３／Ｂｐｈｅｎ／ＬｉＦ／Ａｌ
（陽極／ＨＴＬ／ＥＭＬ／ＥＴＬ／ＥＩＬ／陰極）
Ｂｐｈｅｎは、バソフェナントロリンを意味している。すなわちこれは有機化合物である。
この発光素子は、正孔輸送層に含有される正孔輸送材料の伝導帯下端のエネルギー準位（Ｅｃ（ＨＴＬ））が、発光層に含有される発光材料の伝導帯下端のエネルギー準位（Ｅｃ（ＥＭＬ））よりも高く、その差は０．５ｅＶであり、電子輸送層に含有される電子輸送材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＴＬ））が、発光層に含有される発光材料の価電子帯上端のエネルギー準位（Ｅｖ（ＥＭＬ））よりも低く、その差は０．８ｅＶであるという構成を有している。
両極に電圧を印加したところ、発光が確認された。
[Example 4]
(Fabrication of light-emitting device-4)
A light-emitting device having the following structure was manufactured.
ITO/Cu—Sn—I/CsPbBr 3 /Bphen/LiF/Al
(anode/HTL/EML/ETL/EIL/cathode)
Bphen means bathophenanthroline. it is an organic compound.
In this light-emitting device, the energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is equal to the energy level of the bottom of the conduction band (Ec(HTL)) of the light-emitting material contained in the light-emitting layer. Ec (EML)), the difference is 0.5 eV, and the energy level (Ev (ETL)) of the valence band top of the electron transport material contained in the electron transport layer is higher than the energy level (Ev (ETL)) contained in the light emitting layer. is lower than the energy level (Ev(EML)) at the upper end of the valence band of the luminescent material, and the difference therebetween is 0.8 eV.
Light emission was confirmed when a voltage was applied to both electrodes.
Claims (12)
発光材料および、正孔輸送材料と電子輸送層に含有される電子輸送材料の両方またはどちらか一方が無機ハロゲン化物である、発光素子。 The energy level (Ec(HTL)) at the bottom of the conduction band of the hole-transporting material contained in the hole-transporting layer is the energy level (Ec(EML)) of the bottom of the conduction band of the light-emitting material contained in the light-emitting layer. higher than
A light-emitting device wherein the light-emitting material and either or both of the hole-transporting material and the electron-transporting material contained in the electron-transporting layer are inorganic halides.
発光材料および、正孔輸送層に含有される正孔輸送材料と電子輸送材料の両方またはどちらか一方が無機ハロゲン化物である、発光素子。 The energy level (Ev(ETL)) at the top of the valence band of the electron-transporting material contained in the electron-transporting layer is the energy level (Ev(EML)) at the top of the valence band of the light-emitting material contained in the light-emitting layer. lower than
A light-emitting device in which the light-emitting material and either or both of the hole-transporting material and the electron-transporting material contained in the hole-transporting layer are inorganic halides.
（式中、ＡはＣｓ＋、Ｒｂ＋、Ｋ＋、Ｎａ+，Ｌｉ＋からなる群から選択される陽イオンであり、ＢはＰｂ２＋、Ｓｎ２＋、Ｇｅ２＋からなる群から選択される陽イオンであり、ＸはＣｌ－、Ｂｒ－、Ｉ－からなる群から選択される陰イオンである。ｍは０以上の整数、ｎは正の整数、ｐは２以上の整数である。） 7. The light-emitting device according to claim 6, wherein the crystalline metal halide is a metal halide represented by the formula AmBnXp .
(Wherein, A is a cation selected from the group consisting of Cs + , Rb + , K + , Na + , Li + , B is a cation selected from the group consisting of Pb 2+ , Sn 2+ , Ge 2+ X is an anion selected from the group consisting of Cl − , Br − and I − , m is an integer of 0 or more, n is a positive integer, and p is an integer of 2 or more.)
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| JP2013235846A (en) | 2008-01-18 | 2013-11-21 | Lg Chem Ltd | Organic light-emitting element and manufacturing method thereof |
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| JP2013235846A (en) | 2008-01-18 | 2013-11-21 | Lg Chem Ltd | Organic light-emitting element and manufacturing method thereof |
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| WO2017001542A1 (en) | 2015-06-30 | 2017-01-05 | Cambridge Enterprise Limited | Luminescent device |
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