JP7170422B2 - 処理装置 - Google Patents
処理装置 Download PDFInfo
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- JP7170422B2 JP7170422B2 JP2018094089A JP2018094089A JP7170422B2 JP 7170422 B2 JP7170422 B2 JP 7170422B2 JP 2018094089 A JP2018094089 A JP 2018094089A JP 2018094089 A JP2018094089 A JP 2018094089A JP 7170422 B2 JP7170422 B2 JP 7170422B2
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- Prior art keywords
- edge ring
- reflected light
- divided
- edge
- driving
- Prior art date
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Description
まず、一実施形態に係るプラズマ処理装置1の一例について、図1を参照しながら説明する。一実施形態に係るプラズマ処理装置1は、容量結合型(Capacitively Coupled Plasma:CCP)の平行平板プラズマ処理装置であり、処理装置の一例である。
(3分割されたエッジリング)
一実施形態に係る3分割されたエッジリング87の構成について、図2を参照しながら説明する。図2は、一実施形態に係る3分割されたエッジリング87の一例を示す図である。本実施形態に係るエッジリング87は、内側エッジリング87i、中央エッジリング87m及び外側エッジリング87oを有する。内側エッジリング87iは、ウェハWの周辺部の最近傍にウェハWを囲むように配置され、エッジリング87の最も内側の部材である。中央エッジリング87mは、ウェハW及び内側エッジリング87iの外側にてこれらを囲むように設けられ、エッジリング87の中央の部材である。外側エッジリング87oは、中央エッジリング87mの外側に設けられた部材であって、エッジリング87の最も外側の部材である。一実施形態では、中央エッジリング87mは、移動機構200により上又は下に移動が可能であり、内側エッジリング87i及び外側エッジリング87oは、静電チャック21の上面に固定されている。
中央エッジリング87mの爪部87m2は、連結部103に接続されている。連結部103は、筒状支持部16に設けられた空間16aを上下に移動する。ハウジング100は、アルミナなどの絶縁体から形成されている。ハウジング100の内部の凹部100aには移動機構200が設けられている。
次に、一実施形態に係るエッジリング87の厚さを計測する計測システム2の一例について、図3及び図4を参照しながら説明する。図3は、一実施形態に係るエッジリング87の厚さを計測する計測システム2の一例を示す図である。図4は、一実施形態に係る計測システム2による分析機能を説明する図である。
次に、一実施形態に係るエッジリング87の駆動処理の一例について、図6を参照しながら説明する。図6は、一実施形態に係るエッジリング87の駆動処理の一例を示すフローチャートである。
以上では、計測システム2は、エッジリング87の中央エッジリング87mの厚さを直接測定した。そして、分析装置115は、測定した厚さとエッジリング87の新品時の厚さの初期値とから算出されるエッジリング87の消耗量に応じてエッジリング87の駆動量を決定した。しかしながら、エッジリング87の駆動量の決定手法は、これに限られない。例えば、計測システム2の測定対象は、分割されていないエッジリング87であってもよい。この場合にも同様に、計測システム2は、分割されていないエッジリング87の厚さを測定し、分析装置115は、測定した厚さに基づきエッジリング87の駆動量を決定してもよい。
測定系2aは、複数設けられてもよい。例えば、エッジリング87等の部材の円周上に、複数の測定系2aを均等な間隔で配置してもよい。この場合、測定光を部材に照射する工程は、部材の複数個所に測定光を照射してもよい。反射光の強度I(x)を検出する工程は、前記部材の各箇所の表面からの反射光と前記部材の各箇所の裏面からの反射光とに基づき反射光の各箇所の強度分布を検出してもよい。前記光路差を算出する工程は、検出した各箇所の前記強度分布を示すスペクトルをフーリエ変換して各箇所の光路差を求めてもよい。前記部材の駆動量を決定する工程は、各箇所の前記光路差に基づいて各箇所に応じた前記部材の駆動量を決定してもよい。
図2に示したリフターピン102は複数本設けられ、その上下動は、移動機構200を使用してそれぞれ独立して制御することができる。そこで、上記実施形態の変形例2に係るエッジリングの駆動処理として、エッジリング87のリフターピン102を各箇所で独立して駆動させ、各箇所のエッジリング87の高さを個別調整することでウェハWの配置のずれを補正する例について説明する。
2 計測システム
2a 測定系
10 処理容器
20 載置台
21 静電チャック
22 基台
40 上部電極
40a 窓部
41 トップシールドリング
60 制御部
70 光路長決定部
71 駆動量決定部
72 駆動量校正テーブル
86 インシュレータリング
87 エッジリング
87a エッジリングの表面
87b エッジリングの裏面
89 カバーリング
100 ハウジング
101 ピエゾアクチュエータ
102 リフターピン
110 光源
111 光サーキュレータ
113 フォーカサー
114 分光器
115 分析装置
118 光路長算出部
200 移動機構
Ra,Rb 反射光
Claims (13)
- 処理容器と、
前記処理容器内に設けられ、基板を載置する載置台と、
環状のシリコンからなり、前記載置台に載置された基板を囲むように径方向に複数に分割されたエッジリングと、
前記複数に分割されたエッジリングの少なくともいずれかを駆動する駆動部と、
制御部と、を有し、
前記制御部は、
前記複数に分割されたエッジリングを透過する波長を有する測定光を前記複数に分割されたエッジリングの少なくともいずれかに照射する工程と、
前記エッジリングの表面からの反射光と、前記エッジリングの裏面からの反射光とに基づき反射光の強度分布を検出する工程と、
前記強度分布を示すスペクトルをフーリエ変換して光路差を算出する工程と、
前記光路差に基づいて前記複数に分割されたエッジリングの少なくともいずれかの駆動量を決定する工程と、
決定した前記駆動量に基づいて前記複数に分割されたエッジリングの少なくともいずれかを駆動する工程と、
を含む駆動方法を制御する、処理装置。 - 前記制御部は、
前記照射する工程において、前記処理容器内に設けられる前記複数に分割されたエッジリングの少なくともいずれかの複数個所に前記測定光を照射し、
前記強度分布を検出する工程において、前記エッジリングの各箇所の表面からの反射光と、前記エッジリングの各箇所の裏面からの反射光とに基づき反射光の各箇所の強度分布を検出し、
前記光路差を算出する工程において、検出した各箇所の前記強度分布を示すスペクトルをフーリエ変換して各箇所の光路差を求め、
前記駆動量を決定する工程において、各箇所の前記光路差に基づいて各箇所に応じた前記複数に分割されたエッジリングの少なくともいずれかの駆動量を決定する、
請求項1に記載の処理装置。 - 前記複数に分割されたエッジリングに当接する複数のリフターピンを有し、
前記制御部は、
前記駆動量を決定する工程において、前記各箇所の光路差に基づいて各箇所に応じた前記複数に分割されたエッジリングの少なくともいずれかの駆動量を決定し、
前記駆動する工程において、決定した各箇所に応じた前記駆動量に基づいて各箇所に応じた前記複数のリフターピンの少なくともいずれかを独立して上下動し、前記複数に分割されたエッジリングの少なくともいずれかを駆動する、
請求項2に記載の処理装置。 - 前記制御部は、
前記照射する工程において、前記複数に分割されたエッジリングの少なくともいずれかの上部又は下部から測定光を照射する、
請求項1~3のいずれか一項に記載の処理装置。 - 前記制御部は、
前記駆動方法を、前記処理容器内にて行われる異なるプラズマ処理工程の間に行う、
請求項1~4のいずれか一項に記載の処理装置。 - 前記制御部は、
前記処理容器内で基板をプラズマ処理する工程と、
前記基板を前記処理容器に搬入する前に、前記駆動方法を実行する工程と、
を制御する、
請求項1~5のいずれか一項に記載の処理装置。 - 処理容器内に設けられる部材と、
前記部材を駆動する駆動部と、
制御部と、を有する処理装置であって、
前記制御部は、
前記部材を透過する波長を有する測定光を前記部材に照射する工程と、
前記部材の表面からの反射光と前記部材の裏面からの反射光とに基づき反射光の強度分布を検出する工程と、
前記強度分布を示すスペクトルをフーリエ変換して光路差を算出する工程と、
前記光路差に基づいて前記部材の駆動量を決定する工程と、
決定した前記駆動量に基づいて前記部材を駆動する工程と、
を有する駆動方法を制御し、
前記部材に照射する工程において、前記処理容器の前記部材とは異なる他の部材へ前記測定光を照射し、
前記部材を駆動する工程において、決定した前記他の部材の駆動量に基づいて前記部材を駆動するように制御する、処理装置。 - 処理容器と、
前記処理容器内に設けられ、基板を載置する載置台と、
前記処理容器内に配置される測定対象と、
前記測定対象を上下方向に移動させるように構成されたアクチュエータと、
測定光を前記測定対象に照射するように構成された照射部と、
前記測定対象の表面からの反射光と前記測定対象の裏面からの反射光とに基づき反射光の強度分布を検出するように構成された検出部と、
前記測定対象の表面からの反射光と前記測定対象の裏面からの反射光との光路差に基づいて前記測定対象の駆動量を決定するように構成された分析装置と、
決定した前記駆動量に基づいて前記アクチュエータを制御するように構成された制御部と、
を有し、
前記測定対象は、環状のシリコンからなり、前記載置台に載置された基板を囲むように径方向に複数に分割されたエッジリングであり、
前記アクチュエータは、決定した前記駆動量に基づいて前記複数に分割されたエッジリングの少なくともいずれかを駆動する、
処理装置。 - 前記分析装置は、前記強度分布を示すスペクトルをフーリエ変換することにより前記光路差を算出する、
請求項8に記載の処理装置。 - 前記複数に分割されたエッジリングは、前記載置台の上に配置される、
請求項8又は請求項9に記載の処理装置。 - 前記複数に分割されたエッジリングは、
前記基板を囲むように配置された内側エッジリング、前記内側エッジリングを囲むように配置された中央エッジリング、及び前記中央エッジリングを囲むように配置された外側エッジリングである、
請求項1~6、8~10のいずれか一項に記載の処理装置。 - 決定した前記駆動量に基づいて前記中央エッジリングを駆動する、
請求項11に記載の処理装置。 - 前記複数に分割されたエッジリングは、第1のエッジリングと第2のエッジリングとを含み、
前記照射する工程において、前記第1のエッジリングに前記測定光を照射し、
前記駆動量を決定する工程において、前記第2のエッジリングの駆動量を決定する、
請求項1~6のいずれか一項に記載の処理装置。
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