JP7145075B2 - 多層回路基板に基づくパワーモジュール - Google Patents
多層回路基板に基づくパワーモジュール Download PDFInfo
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- JP7145075B2 JP7145075B2 JP2018544498A JP2018544498A JP7145075B2 JP 7145075 B2 JP7145075 B2 JP 7145075B2 JP 2018544498 A JP2018544498 A JP 2018544498A JP 2018544498 A JP2018544498 A JP 2018544498A JP 7145075 B2 JP7145075 B2 JP 7145075B2
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- circuit board
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- multilayer circuit
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- power semiconductor
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- 239000002184 metal Substances 0.000 claims description 54
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Description
本発明は、パワー半導体デバイスのパッケージングの分野に関する。特に、本発明は、多層回路基板に基づくパワーモジュールに関する。
IGBTまたはパワーMOSFETなどのパワー半導体デバイスは、さまざまなパワーエレクトロニクス用途において電流のスイッチまたは整流に使用されている。重要な急速に成長している用途は、電気またはハイブリッド電気自動車のためのコンバータシステムである。この用途では、利用可能な搭載量が限られているため、電力密度はパワーエレクトロニクスコンバータシステムにとって重要な要件である。シリコンカーバイド(SiC)デバイスのような代替のワイドバンドギャップ半導体デバイスの使用は、この点でさらなる改善を請け合う。
本発明の目的は、漂遊インピーダンスを低くすることができる製造しやすいパワーモジュールを提供することである。
本発明の主題は、添付の図面に例示される例示的な実施形態を参照して、以下の本文においてより詳細に説明される。
図1は、パワー半導体デバイス15a、15b(例えば、SiC MOSFET)が設けられているキャビティ14を含む、多層回路基板12を備えるパワーモジュール10を示す。
図1はさらに、多層回路基板12、層30,32および端子24a、24b、24cの組立体を、エポキシモールディングコンパウンドに基づくプラスチック材料筐体36に収容することができることを示す。筐体36は、冷却のためのベース金属層32および/または外部接続のための端子/ピン24a、24b、24cのみを露出したままにすることができる。エポキシ成型モジュール10は、良好な機械的堅牢性、ならびに、過酷な条件下での十分な温度性能および水分侵入に対する保護を提供することができる。
10 パワーモジュール
12 多層回路基板
14 キャビティ
15a パワー半導体デバイス
15b パワー半導体デバイス
16a 最上層
16b 中間層
16c 底層
18 ゲート層
20 絶縁層
22 ビア
24a DC+端子
24b DC-端子
24c AC端子
24d ゲート端子
26a 導電性部材(ワイヤボンド)
26b 導電性部材(金属ストリップ)
28a ボトムコンタクト領域
28b トップコンタクト領域
28c ゲートコンタクト領域
30 絶縁層
32 ベース金属層
34 絶縁金属基板
36 筐体
38 金属バッファ層
40 ゲートコンタクト領域
42 環流ダイオード
44 セラミック基板
Claims (14)
- パワーモジュール(10)であって、
上側にトップコンタクト領域(28b)およびゲートコンタクト領域(28c)を有する少なくとも1つのパワー半導体デバイス(15a、15b)と、
複数の電気絶縁層(20)によって分離された複数の導電層(16a、16b、18)を有する多層回路基板(12)であって、前記電気絶縁層(20)は、前記導電層(16a、16b、18)とともに積層されており、前記複数の導電層(16a、16b、18)は、厚みの互いに異なる厚い導電層(16a、16b)および薄い導電層(18)を含み、
前記多層回路基板(12)は、前記多層回路基板(12)の上側に開口する少なくとも1つのキャビティ(14)を有し、キャビティ(14)は、少なくとも2つの導電層(16a、16b、18)を貫通する、多層回路基板(12)と、
前記多層回路基板(12)の下側に設けられた導電性の底層(16c)であって、前記パワー半導体デバイス(15a、15b)は、前記トップコンタクト領域(28b)および前記多層回路基板(12)の上側にボンディングされた導電性部材(26a、26b)を介して前記多層回路基板(12)の前記上側に電気的に接続される、導電性の底層(16c)とを備え、
前記キャビティ(14)は、前記多層回路基板(12)を通って前記底層(16c)に到達し、
前記パワー半導体デバイス(15a、15b)は、ボトムコンタクト領域(28a)によって前記底層(16c)にボンディングされており、
前記ゲートコンタクト領域(28c)は、前記多層回路基板(12)の前記上側に導電性部材(26a)によって電気的に接続されるとともに、前記多層回路基板(12)を通って前記導電層に直交して延伸する導電性ビア(22)によって前記薄い導電層(18)に電気的に接続され、
前記底層(16c)は、前記多層回路基板(12)の一体部分を形成する絶縁金属基板(34)の一部であり、前記絶縁金属基板(34)は、前記底層(16c)と、前記底層(16c)に接触する絶縁層(30)によって前記底層(16c)から絶縁されたさらなる金属層(32)とを含む、パワーモジュール(10)。 - 前記底層(16c)は、セラミック層(30’)に取り付けられた前記底層(16c)を含むセラミック基板(44)の一部である、請求項1に記載のパワーモジュール(10)。
- パワー半導体デバイス(15a、15b)が内部にボンディングされたキャビティ(14)を有する少なくとも2つの多層回路基板(12)が、共通の基板(44)に取り付けられている、請求項1~2のいずれか一項に記載のパワーモジュール(10)。
- 前記底層(16c)または前記底層(16c)に取り付けられた金属層(32)は冷却用の構造化底面を有する、請求項1~3のいずれか一項に記載のパワーモジュール(10)。
- 前記パワー半導体デバイス(15a、15b)が前記キャビティ(14)内に完全に収容されている、請求項1~4のいずれか一項に記載のパワーモジュール(10)。
- 前記多層回路基板(12)は少なくとも2つのキャビティ(14)を含み、前記キャビティ内で、少なくとも2つのパワー半導体デバイス(15a、15b)が、下側によって前記キャビティ(14)の底部に取り付けられており、および/または
すべてのパワー半導体デバイス(15a、15b)は別個のキャビティ(14)内に位置決めされる、請求項1~5のいずれか一項に記載のパワーモジュール(10)。 - 前記パワー半導体デバイス(15a、15b)は、前記多層回路基板(12)の前記上側に導電性部材としてのワイヤボンド(26a)を介して電気的に接続されており、および/または
前記パワー半導体デバイス(15a、15b)は、前記多層回路基板(12)の前記上側に導電性部材としての金属ストリップ(26b)を介して電気的に接続されている、請求項1~6のいずれか一項に記載のパワーモジュール(10)。 - 金属バッファ層(38)が前記パワー半導体デバイス(15a、15b)の前記トップコンタクト領域(28b)にボンディングされ、前記トップコンタクト領域を前記多層回路基板の前記上側と相互接続する前記導電性部材(26a、26b)が、前記金属バッファ層(38)にボンディングされている、請求項1~7のいずれか一項に記載のパワーモジュール(10)。
- 前記パワー半導体デバイス(15a、15b)の前記トップコンタクト領域(28b)および前記ボトムコンタクト領域(28a)に電気的に接続された第1の導電層(16a)および第2の導電層(16b)が、前記多層回路基板(12)の前記上側または前記下側の面積の少なくとも10%超において互いに重なり合っており、および/または
前記第1の導電層(16a)および/または前記第2の導電層(16b)は、前記多層回路基板(12)の前記上側または前記下側の面積の50%超にわたって延伸する、請求項1~8のいずれか一項に記載のパワーモジュール(10)。 - 前記パワー半導体デバイス(15a、15b)のトップおよび/またはボトムコンタクト領域(28a、28b)に電気的に接続された第1の導電層(16a)および/または第2の導電層(16b)は、前記パワー半導体デバイス(15a、15b)のゲートコンタクト領域(28c)と電気的に相互接続された第3の導電層(18)よりも厚い、請求項1~9のいずれか一項に記載のパワーモジュール(10)。
- 前記多層回路基板(12)の導電層(16a、16b、16c、18)は、前記導電性ビア(22)によって相互接続されている、請求項1~10のいずれか一項に記載のパワーモジュール(10)。
- 前記パワーモジュール(10)は、前記多層回路基板(12)の前記導電層(16a、16b)によって電気的に相互接続された少なくとも2つのパワー半導体スイッチ(15a、15b)と、底層(16c)と、ハーフブリッジを形成するための導電性部材(26a、26b)とを備える、請求項1~11のいずれか一項に記載のパワーモジュール(10)。
- 前記パワーモジュール(10)の外部接続を接続するための端子(24a、24b、24c)は、前記多層回路基板(12)の前記上側に直接ボンディングされ、および/または前記多層回路基板(12)の一部である、請求項1~12のいずれか一項に記載のパワーモジュール(10)。
- 前記キャビティ(14)内の前記多層回路基板(12)と前記パワー半導体デバイス(15a、15b)とがプラスチック材料(36)内に封止されている、請求項1~13のいずれか一項に記載のパワーモジュール(10)。
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