JP7130272B2 - 単独型の単結晶機械および光学構成要素の生成のための単結晶ダイヤモンド部材の生成方法 - Google Patents
単独型の単結晶機械および光学構成要素の生成のための単結晶ダイヤモンド部材の生成方法 Download PDFInfo
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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Description
- 単結晶ダイヤモンド基板または層を設ける工程と;
- 基板または層上に第1の接着層を設ける工程と;
- 第1の接着層上に第2の接着層を設ける工程と;
- 第2の接着層上にマスク層を設ける工程と;
- マスク層ならびに第1および第2の接着層を通って少なくとも1つのくぼみまたは複数のくぼみを形成して、単結晶ダイヤモンド基板または層の1つまたはそれ以上の部分を露出させる工程と;
- 単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分をエッチングし、単結晶ダイヤモンド基板または層を全体にわたってエッチングする工程とを含む。
A. Ando, Y., Nishibayashi, Y., Kobashi, K., Hirao, T., & Oura, K. (2002), Smooth and high-rate reactive ion etching of diamond. Diamond and Related Materials, 11(3-6), 824-827. https://doi.org/10.1016/S0925-9635(01)00617-3
B. Appel, P., Neu, E., Ganzhorn, M., Barfuss, A., Batzer, M., Gratz, M., … Maletinsky, P. (2016), Fabrication of all diamond scanning probes for nanoscale magnetometry. Review of Scientific Instruments, 87(6), 063703 https://doi.org/10.1063/1.4952953
C. Enlund, J., Isberg, J., Karlsson, M., Nikolajeff, F., Olsson, J., & Twitchen, D. J. (2005), Anisotropic dry etching of boron doped single crystal CVD diamond. Carbon, 43(9), 1839-1842. https://doi.org/10.1016/j.carbon.2005.02.022
D. Forsberg, P. (2013), Diamond Microfabrication for Applications in Optics and Chemical Sensing, Retrieved from http://www.diva-portal.org/smash/record.jsf?pid=diva2:600078
E. Forsberg, P., & Karlsson, M. (2013), High aspect ratio optical gratings in diamond, Diamond and Related Materials, 34, 19-24. https://doi.org/10.1016/j.diamond.2013.01.009
F. Fu, J., Wang, F., Zhu, T., Wang, W., Liu, Z., Li, F., … Hou, X. (2017), Single crystal diamond cantilever for micro-electromechanical systems, Diamond and Related Materials, 73, 267-272. https://doi.org/10.1016/j.diamond.2016.10.011
G. Hausmann, B. J. M., Khan, M., Zhang, Y., Babinec, T. M., Martinick, K., McCutcheon, M., … Lon?ar, M. (2010), Fabrication of diamond nanowires for quantum information processing applications, Diamond and Related Materials, 19(5-6), 621-629. https://doi.org/10.1016/j.diamond.2010.01.011
H. Hwang, D. S., Saito, T., & Fujimori, N. (2004); New etching process for device fabrication using diamond; Diamond and Related Materials, 13(11-12), 2207-2210. https://doi.org/10.1016/j.diamond.2004.07.020
I. Khanaliloo, B., Mitchell, M., Hryciw, A. C., & Barclay, P. E. (2015); High- Q/ V Monolithic Diamond Microdisks Fabricated with Quasi-isotropic Etching; Nano Letters, 15(8), 5131-5136. https://doi.org/10.1021/acs.nanolett.5b01346
J. Lee, C. L., Gu, E., Dawson, M. D., Friel, I., & Scarsbrook, G. A. (2008); Etching and micro-optics fabrication in diamond using chlorine-based inductively-coupled plasma; Diamond and Related Materials, 17(7-10), 1292-1296. https://doi.org/10.1016/j.diamond.2008.01.011
K. Liu, H., Reilly, S., Herrnsdorf, J., Xie, E., Savitski, V. G., Kemp, A. J., … Dawson, M. D. (2016); Large radius of curvature micro-lenses on single crystal diamond for application in monolithic diamond Raman lasers; Diamond and Related Materials, 65, 37-41. https://doi.org/10.1016/j.diamond.2016.01.016
L. Otterbach, R., Hilleringmann, U., Horstmann, T. J., & Goser, K. (2001); Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications; Diamond and Related Materials, 10(3), 511-514.
M. Otterbach, Ralf. (2004). Tiefenatzung in Diamant am Beispiel eines Drucksensors fur Hochtemperaturanwendungen (Vol. Nr. 1023). Dusseldorf: VDI Verlag.
N. Polikarpov, M., Polikarpov, V., Snigireva, I., & Snigirev, A. (2016); Diamond X-ray Refractive Lenses with High Acceptance; Physics Procedia, 84, 213-220. https://doi.org/10.1016/j.phpro.2016.11.037
O. Tao, Y., Boss, J. M., Moores, B. A., & Degen, C. L. (2014); Single-crystal diamond nanomechanical resonators with quality factors exceeding one million; Nature Communications, 5. https://doi.org/10.1038/ncomms4638
P. Tao, Y., & Degen, C. L. (2015); Single-Crystal Diamond Nanowire Tips for Ultrasensitive Force Microscopy; Nano Letters, 15(12), 7893-7897. https://doi.org/10.1021/acs.nanolett.5b02885
Q. Zhu, T.-F., Fu, J., Wang, W., Wen, F., Zhang, J., Bu, R., … Wang, H.-X. (2017); Fabrication of diamond microlenses by chemical reflow method. Optics Express, 25(2), 1185; https://doi.org/10.1364/OE.25.001185
Claims (17)
- 単結晶ダイヤモンド部材の生成方法であって:
単結晶ダイヤモンド基板または層を設ける工程と;
単結晶ダイヤモンド基板または層上に第1の接着層を設ける工程と;
該第1の接着層上に第2の接着層を設ける工程と;
該第2の接着層上にマスク層を設ける工程と;
該マスク層ならびに第1および第2の接着層を通って少なくとも1つのくぼみまたは複数のくぼみを形成して、単結晶ダイヤモンド基板または層の1つまたはそれ以上の部分を露出させる工程と;
単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分をエッチングし、単結晶ダイヤモンド基板または層を全体にわたってエッチングする工程とを含み、
支持基板に単結晶ダイヤモンド基板または層を取付ける取付け層または犠牲層を設ける工程をさらに含み、
単結晶ダイヤモンド基板または層を全体にわたってエッチングして、そして、犠牲層の除去により、または、支持基板に対する単結晶ダイヤモンド基板または層の取付け層の除去により、該単結晶ダイヤモンド部材が解放され、自立型単結晶ダイヤモンド部材を形成する、前記方法。 - 第1の接着層は、単結晶ダイヤモンド基板または層の表面上に直接設けられる、請求項1に記載の方法。
- 第2の接着層は、第1の接着層上に直接設けられる、請求項1または2に記載の方法。
- 第1および第2の接着層は、異なる材料を含み、または異なる材料からなる、請求項1~3のいずれか1項に記載の方法。
- マスク層および/または第1の接着層および/または第2の接着層は、単結晶ダイヤモンドよりゆっくりとエッチングされる材料を含み、または該材料のみからなる、請求項1~4のいずれか1項に記載の方法。
- マスク層および/または第1の接着層および/または第2の接着層は、酸素プラズマエッチングに露出された単結晶ダイヤモンドよりゆっくりとエッチングされる材料を含み、または該材料のみからなる、請求項1~5のいずれか1項に記載の方法。
- 単結晶ダイヤモンド基板または層は、1μm~1mmの厚さの全体にわたってエッチングされる、請求項1~6のいずれか1項に記載の方法。
- 生成された単結晶ダイヤモンド部材は、1μm~1mmの厚さを有する、請求項1~7のいずれか1項に記載の方法。
- 単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分のエッチングは、酸素プラズマエッチングを使用して実施される、請求項1~8のいずれか1項に記載の方法。
- 単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分のエッチングは、酸素プラズマエッチングと、単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分に対するプラズマによって生じたイオンの加速を介した物理的エッチングとを使用して実施される、請求項1~9のいずれか1項に記載の方法。
- 少なくとも1つのくぼみまたは複数のくぼみは、単結晶ダイヤモンド基板または層へ転写予定の単結晶ダイヤモンド部材のプロファイルをマスク層内に画成する、請求項1~10のいずれか1項に記載の方法。
- 犠牲層は、第1の接着層と同じ材料を含み、または該材料のみからなる、請求項1~11のいずれか1項に記載の方法。
- 方法は、少なくとも1つのくぼみもしくは複数のくぼみを形成する前に単結晶ダイヤモンド基板もしくは層を支持基板に取り付ける工程をさらに含む、請求項1~12のいずれか1項に記載の方法。
- マスク層上にプロファイル形成層を設けて、少なくとも1つのくぼみまたは複数のくぼみをマスク層内に形成する工程をさらに含む、請求項1~13のいずれか1項に記載の方法。
- プロファイル形成層の外側セクションを除去する工程をさらに含み、したがってプロファイル形成層の中心セクションがマスク層上に残り、マスク層の内側区域内に少なくとも1つのくぼみまたは複数のくぼみを形成する、請求項14に記載の方法。
- 単結晶ダイヤモンド基板または層の露出された1つまたはそれ以上の部分をエッチングする前に、マスク層の側壁を湿式エッチングして、少なくとも1つのくぼみまたは複数のくぼみを画成し、側壁を平滑にする工程をさらに含む、請求項1~15のいずれか1項に記載の方法。
- 自立型単結晶ダイヤモンド部材を解放する工程をさらに含む、請求項1~16に記載の方法。
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EP3839649A1 (fr) * | 2019-12-20 | 2021-06-23 | Nivarox-FAR S.A. | Composant horloger rigide pour mecanisme oscillateur ou pour mecanisme d'echappement et mouvement d'horlogerie comportant un tel composant |
CN111300167B (zh) * | 2020-03-09 | 2021-04-20 | 大连理工大学 | 一种薄壁复杂结构单晶金刚石惯导器件的超精密加工方法 |
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WO2012118944A2 (en) | 2011-03-03 | 2012-09-07 | The Trustees Of Columbia University In The City Of New York | Techniques for producing thin films of single crystal diamond |
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EP2964455A4 (en) * | 2013-03-06 | 2016-11-16 | Univ Columbia | PROCESS FOR THE MANUFACTURE OF DIAMOND NANOSTRUCTURES |
EP3109200B1 (fr) | 2015-06-25 | 2023-06-28 | Nivarox-FAR S.A. | Piece de micromecanique avec une surface de contact diminuee et son procede de fabrication |
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US20200199780A1 (en) | 2020-06-25 |
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