JP7127962B2 - 光学フィルタアレイ - Google Patents
光学フィルタアレイ Download PDFInfo
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- JP7127962B2 JP7127962B2 JP2017023195A JP2017023195A JP7127962B2 JP 7127962 B2 JP7127962 B2 JP 7127962B2 JP 2017023195 A JP2017023195 A JP 2017023195A JP 2017023195 A JP2017023195 A JP 2017023195A JP 7127962 B2 JP7127962 B2 JP 7127962B2
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- 230000003287 optical effect Effects 0.000 title description 46
- 125000006850 spacer group Chemical group 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 22
- 230000003595 spectral effect Effects 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 4
- OBOYOXRQUWVUFU-UHFFFAOYSA-N [O-2].[Ti+4].[Nb+5] Chemical compound [O-2].[Ti+4].[Nb+5] OBOYOXRQUWVUFU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 169
- 239000011247 coating layer Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000003491 array Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Description
Claims (20)
- 基板に配置されたフィルタアレイを備えるデバイスであって、該フィルタアレイは、
前記基板に配置された第1ミラーと、
前記第1ミラー上に互いに離れて配置された複数のスペーサと、
前記複数のスペーサ上に一体的に形成され配置された第2ミラーとを含み、
前記複数のスペーサの中の第1スペーサは第1厚さを有し、
前記複数のスペーサの中の第2スペーサは前記第1厚さと異なる第2厚さを有し、
前記第1スペーサに対応する第1チャネル及び前記第2スペーサに対応する第2チャネルは10μm未満の分離幅を有し、
前記第2ミラーは、終端部分に第1傾斜面および第2傾斜面を含み、
前記第2傾斜面は、前記第2ミラーの前記第1傾斜面の反対側に位置し、前記第1傾斜面と前記第2傾斜面とは順テーパ形状をなすデバイス。 - 請求項1に記載のデバイスにおいて、前記第2ミラーは一組のセンサ素子の中の2つ以上のセンサ素子と整列されるデバイス。
- 請求項1又は2に記載のデバイスにおいて、前記第1厚さ又は前記第2厚さは光の特定のスペクトル領域を通過するように選択され、前記特定のスペクトル領域は、
紫外線(UV)スペクトル領域、
可視スペクトル領域、
近赤外(NIR)スペクトル領域、
中波長赤外(MWIR)スペクトル領域、又は
低波長赤外(LWIR)スペクトル領域の中の少なくとも1つを含むデバイス。 - 請求項1~3の何れか一項に記載のデバイスにおいて、前記デバイスはシリコン系検出器又はインジウムガリウム砒素(InGaAs)系検出器であるデバイス。
- 請求項1~4の何れか一項に記載のデバイスにおいて、前記デバイスは64以下のチャネルを持つハイパースペクトル画像センサであるデバイス。
- 請求項1~5の何れか一項に記載のデバイスにおいて、前記第1ミラー又は前記第2ミラーは銀層又はアルミニウム層を含む金属ミラーであるデバイス。
- 請求項1~6の何れか一項に記載のデバイスにおいて、前記第1ミラー又は前記第2ミラーは低屈折材料及び高屈折率材料を含む1/4波長積層であり、
前記低屈折材料は、フッ化マグネシウム(MgF2)層又は酸化ケイ素(SiO2)の中の少なくとも1つを含むデバイス。 - 請求項1~7の何れか一項に記載のデバイスにおいて、前記第1ミラー又は前記第2ミラーは低屈折材料及び高屈折率材料を含む1/4波長積層であり、
前記高屈折率材料は、水素化シリコン(Si:H)層、五酸化ニオブ(Nb2O5)層、五酸化タンタル(Ta2O5)層、二酸化チタン(TiO2)層、又は二酸化ハフニウム(HfO2)層の中の少なくとも1つを含むデバイス。 - 請求項1~8の何れか一項に記載のデバイスにおいて、前記複数のスペーサは、水素化シリコン(Si:H)層,五酸化ニオブ(Nb2O5)層、五酸化タンタル(Ta2O5)層、二酸化チタン(TiO2)層、又は二酸化ハフニウム(HfO2)層の中の少なくとも1つを含むデバイス。
- 基板に配置されたフィルタアレイを備えるデバイスであって、該フィルタアレイは、
前記基板に配置された第1ミラーと、
前記第1ミラーに配置されたスペーサと、
前記スペーサ上に一体的に形成され配置された第2ミラーとを含み、
前記スペーサは複数のスペーサ層を含み、
前記複数のスペーサ層の中の第1スペーサ層は前記第1ミラーを覆うように配置され、
前記複数のスペーサ層の中の第2スペーサ層は前記第1スペーサ層に配置され、
前記第1スペーサ層に対応する第1チャネル及び前記第2スペーサ層に対応する第2チャネルは、5μm未満の分離幅を有し、
前記第2ミラーは、終端部分に第1傾斜面および第2傾斜面を含み、
前記第2傾斜面は、前記第2ミラーの前記第1傾斜面の反対側に位置し、前記第1傾斜面と前記第2傾斜面とは順テーパ形状をなすデバイス。 - 請求項10に記載のデバイスにおいて、前記スペーサは前記第1スペーサ層に配置された、前記複数のスペーサ層の中の第3スペーサ層を更に備え、該第3スペーサ層と前記第2スペーサ層とは隣接していないデバイス。
- 請求項10又は11に記載のデバイスにおいて、前記フィルタアレイはセンサ素子アレイと整列され、前記センサ素子アレイは複数のセンサ素子を含むハイパースペクトル画像センサであり、前記複数のセンサ素子は25万画素~4000万画素を有するデバイス。
- 請求項10~12の何れか一項に記載のデバイスにおいて、前記分離幅は500nm未満であるデバイス。
- 請求項10~13の何れか一項に記載のデバイスにおいて、前記フィルタアレイは、ブロッカー層、又は反射防止膜の中の少なくとも1つを含むデバイス。
- 基板に配置されたフィルタアレイを備えるデバイスであって、
前記基板はセンサ素子アレイに接着されるガラス基板、又は前記センサ素子アレイを含むシリコン基板であり、
前記フィルタアレイは、
前記基板に配置された第1ミラーと、
複数のスペーサ層と、
前記複数のスペーサ層上に一体的に形成され配置された第2ミラーとを含み、
前記複数のスペーサ層の中の第1スペーサ層は前記第1ミラーに配置され、前記センサ素子アレイの一組のセンサ素子を覆い、
前記複数のスペーサ層の中の第2スペーサ層は前記第1スペーサ層に配置され、前記一組のセンサ素子のサブセットを覆い、
前記複数のスペーサ層の中の第3スペーサ層は前記第2スペーサ層に配置され、前記センサ素子のサブセットを覆い、
前記一組のセンサ素子の各センサ素子は1μm未満の間隔を有し、
前記第2ミラーは、終端部分に第1傾斜面および第2傾斜面を含み、
前記第2傾斜面は、前記第2ミラーの前記第1傾斜面の反対側に位置し、前記第1傾斜面と前記第2傾斜面とは順テーパ形状をなし、
前記第2ミラーは前記一組のセンサ素子と整列されるデバイス。 - 請求項15に記載のデバイスにおいて、前記一組のセンサ素子は、相補型金属酸化膜半導体(CMOS)技術、又は電荷結合素子(CCD)技術を備えるデバイス。
- 請求項15又は16に記載のデバイスにおいて、前記第3スペーサ層に配置され、センサ素子の前記サブセットの前記サブセットのサブセットを覆う、前記複数のスペーサ層の第4スペーサ層を更に備えるデバイス。
- 請求項17に記載のデバイスは、一組の赤チャネル、一組の緑チャネル、一組の青チャネル及び一組の赤外チャネルを含むデバイス。
- 請求項18に記載のデバイスにおいて、前記一組の赤外チャネルは混合スペーサ構成を有し、該混合スペーサ構成は、1つ又は複数の酸化ニオブチタン(NbTiOx)ベース層及び1つ又は複数の水素化シリコン(Si:H)ベース層を含むデバイス。
- 請求項1から19の何れか一項に記載のデバイスにおいて、前記第1傾斜面および前記第2傾斜面は、前記基板に対して5°未満の内角を有するデバイス。
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