JP7126572B2 - シールドマウントを有する堆積システム - Google Patents
シールドマウントを有する堆積システム Download PDFInfo
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- JP7126572B2 JP7126572B2 JP2020570090A JP2020570090A JP7126572B2 JP 7126572 B2 JP7126572 B2 JP 7126572B2 JP 2020570090 A JP2020570090 A JP 2020570090A JP 2020570090 A JP2020570090 A JP 2020570090A JP 7126572 B2 JP7126572 B2 JP 7126572B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Registering, Tensioning, Guiding Webs, And Rollers Therefor (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
Description
Claims (14)
- 複数のカソードアセンブリと、
前記複数のカソードアセンブリの下の回転シールドであって、前記複数のカソードアセンブリのうちの1つを当該回転シールドのシールド孔を通して露出させ、且つ***した周囲フレームを含む頂面を含む回転シールドと、
前記***した周囲フレームに係合して前記回転シールドに固定されるサイズ及び形状のシールドマウントと、
前記シールドマウントに固定されたコレットと、
前記コレットに固定されたシールドモータシャフトと
を備える物理的気相堆積(PVD)チャンバ。 - 前記複数のカソードアセンブリの各々の下のターゲットと、
回転ペデスタルであって、当該回転ペデスタルの上にキャリアを形成するための材料を製造するための回転ペデスタルと
をさらに備える、請求項1に記載のPVDチャンバ。 - 前記***した周囲フレームが、相補的な幾何学的形状を有するポケットを画定し、前記シールドマウントが、前記ポケットの幾何学的形状と相補的な幾何学的形状を有する、請求項1に記載のPVDチャンバ。
- 前記ポケットの幾何学的形状が多角形である、請求項3に記載のPVDチャンバ。
- 前記ポケットの幾何学的形状が五角形である、請求項4に記載のPVDチャンバ。
- 前記ポケットの幾何学的形状が、凹んだ側面を有する五角形である、請求項4に記載のPVDチャンバ。
- 前記シールドマウントが、前記***した周囲フレームによって受け取られるエッジ突起部を含む、請求項1に記載のPVDチャンバ。
- 前記シールドマウントが多角形の形状である、請求項7に記載のPVDチャンバ。
- 前記シールドマウントが五角形の形状である、請求項8に記載のPVDチャンバ。
- 前記シールドモータシャフトが、磁性流体フィードスルーとシールドモータとに係合させられる、請求項1に記載のPVDチャンバ。
- 複数のカソードアセンブリと、
前記複数のカソードアセンブリの下の回転シールドであって、前記複数のカソードアセンブリのうちの1つを当該回転シールドのシールド孔を通して露出させ、且つ***した周囲フレームを含む頂面を含む回転シールドと、
前記***した周囲フレームに係合して前記回転シールドに固定されるサイズ及び形状のシールドマウントと、
前記シールドマウントに固定されたコレットと、
前記コレットに固定され、且つモータに固定されたシールドモータシャフトであって、前記モータが、前記シールドモータシャフト及び前記回転シールドを回転させる、シールドモータシャフトと
を備える物理的気相堆積(PVD)チャンバ。 - 前記シールドモータシャフトに係合して前記シールドモータシャフトの回転運動を前記回転シールドに伝える磁性流体フィードスルー、及び前記コレットと前記シールドモータシャフトとを係合させるテーパ付きセンタリングシャフトをさらに備える、請求項11に記載のPVDチャンバ。
- 前記シールドマウントが、前記回転シールドの頂面上の前記***した周囲フレームに係合して前記回転シールドに固定される幾何学的形状を有する、請求項11に記載のPVDチャンバ。
- 請求項1から13のいずれか一項に記載のPVDチャンバ内に基板を配置することと、
モリブデンを含む第1の層及びシリコンを含む第2の層を含む複数の交互材料層を堆積させることであって、前記基板が極端紫外マスクブランクを含む、堆積させることと
を含む、材料層を堆積させる方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862687232P | 2018-06-19 | 2018-06-19 | |
US62/687,232 | 2018-06-19 | ||
US16/444,570 | 2019-06-18 | ||
US16/444,570 US11236415B2 (en) | 2018-06-19 | 2019-06-18 | Deposition system with shield mount |
PCT/US2019/037875 WO2019246184A1 (en) | 2018-06-19 | 2019-06-19 | Deposition system with shield mount |
Publications (2)
Publication Number | Publication Date |
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JP2021528561A JP2021528561A (ja) | 2021-10-21 |
JP7126572B2 true JP7126572B2 (ja) | 2022-08-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020570090A Active JP7126572B2 (ja) | 2018-06-19 | 2019-06-19 | シールドマウントを有する堆積システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US11236415B2 (ja) |
JP (1) | JP7126572B2 (ja) |
KR (1) | KR102578666B1 (ja) |
TW (1) | TWI821300B (ja) |
WO (1) | WO2019246184A1 (ja) |
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US20190382879A1 (en) | 2019-12-19 |
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KR102578666B1 (ko) | 2023-09-13 |
WO2019246184A1 (en) | 2019-12-26 |
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US11236415B2 (en) | 2022-02-01 |
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