JP7109617B2 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- JP7109617B2 JP7109617B2 JP2021068668A JP2021068668A JP7109617B2 JP 7109617 B2 JP7109617 B2 JP 7109617B2 JP 2021068668 A JP2021068668 A JP 2021068668A JP 2021068668 A JP2021068668 A JP 2021068668A JP 7109617 B2 JP7109617 B2 JP 7109617B2
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- 238000003384 imaging method Methods 0.000 claims description 50
- 238000005192 partition Methods 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000003491 array Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 69
- 239000000463 material Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- ZQXQADNTSSMHJI-UHFFFAOYSA-N hafnium(4+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Ta+5].[Hf+4] ZQXQADNTSSMHJI-UHFFFAOYSA-N 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
101F…前面
101B…背面
103…光電変換素子
105…配線層
107…高誘電率膜
109…バッファ層
111…金属グリッド層
115…カラーフィルター層
115S…カラーフィルターセグメント
121…パーティショングリッド
121S…パーティショングリッドセグメント
125…パターン化構造
125S…パターン化セグメント
127…透明層
127T…上表面
129…集光構造
T1、T2…厚さ
W…幅
AR…パターン化アレイ
Claims (10)
- 固体撮像素子であって、
複数の光電変換素子と、
前記光電変換素子上に設置され、且つ、複数のカラーフィルターセグメントを有するカラーフィルター層と、
前記複数のカラーフィルターセグメント間に設置されるパーティショングリッドと、
前記カラーフィルター層上に設置され、且つ、複数のパターン化セグメントを有するパターン化構造と、
前記カラーフィルター層、および、前記パーティショングリッド上に設置され、前記複数のパターン化セグメントを囲む透明層と、を有し、
前記複数のパターン化セグメントの少なくとも一つが、前記パーティショングリッド上に設置されることを特徴とする固体撮像素子。 - 前記パターン化構造の屈折率は、前記透明層の屈折率より低く、前記パターン化構造の前記屈折率は、1.2~1.65の間であり、前記複数のパターン化セグメントそれぞれの厚さは、前記透明層の厚さ以下であることを特徴とする請求項1に記載の固体撮像素子。
- 前記複数のパターン化セグメントの一つは、前記複数のカラーフィルターセグメントの一つ上に設置される、あるいは、前記複数のパターン化セグメントの少なくとも二個は、前記複数のカラーフィルターセグメントの一つの上に設置されることを特徴とする請求項1に記載の固体撮像素子。
- 前記固体撮像素子の断面図において、前記パーティショングリッドは、複数のパーティショングリッドセグメントに分割され、互いに隣接して配置される前記複数のパーティショングリッドセグメントの二個間の距離は、 画素サイズを定義し、前記画素サイズに対する前記複数のパターン化セグメントそれぞれの幅の比率は、0.5より小さいことを特徴とする請求項1に記載の固体撮像素子。
- 前記複数のカラーフィルターセグメント間に設置される金属グリッド、および、
前記透明層上に設置され、入射光を集光する複数の集光構造、を有し、
前記パーティショングリッドは、前記金属グリッドの少なくとも一部を被覆することを特徴とする請求項1に記載の固体撮像素子。 - 前記複数の集光構造は、それぞれ、前記複数のカラーフィルターセグメントの一つに対応する、あるいは、前記複数の集光構造は、それぞれ、前記複数のカラーフィルターセグメントの少なくとも二個に対応することを特徴とする請求項5に記載の固体撮像素子。
- 前記固体撮像素子の上面において、前記複数のパターン化セグメントは、複数のパターン化アレイを形成し、前記複数のパターン化アレイは、互いに隣接して配置される前記複数のカラーフィルターセグメントの二個、あるいは、対角線上に配置される前記複数のカラーフィルターセグメントの二個に対応することを特徴とする請求項1に記載の固体撮像素子。
- 前記固体撮像素子の上面において、 前記複数のパターン化セグメントは、複数のパターン化アレイを形成し、前記複数のパターン化アレイは、それぞれ、x2個の前記複数のパターン化セグメントを有し、xは、3以上の正の整数であることを特徴とする請求項1に記載の固体撮像素子。
- 前記複数のパターン化セグメントの断面は、それぞれ、三角形、長方形、台形、半円形に形成されることを特徴とする請求項1に記載の固体撮像素子。
- 前記複数のカラーフィルターセグメントは、それぞれ、前記複数の光電変換素子の一つに対応する、あるいは、前記複数のカラーフィルターセグメントは、それぞれ、前記複数の光電変換素子の少なくとも二個に対応することを特徴とする請求項1に記載の固体撮像素子。
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US17/094,531 US11538839B2 (en) | 2020-11-10 | 2020-11-10 | Solid-state image sensor including patterned structure for decreasing petal flares |
US17/094,531 | 2020-11-10 |
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JP2022076982A JP2022076982A (ja) | 2022-05-20 |
JP7109617B2 true JP7109617B2 (ja) | 2022-07-29 |
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JP2014225667A (ja) | 2013-05-16 | 2014-12-04 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | Bsi型cmosイメージセンサ |
JP2019186516A (ja) | 2018-04-16 | 2019-10-24 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 光学センサおよびその形成方法 |
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JP2010245129A (ja) | 2009-04-01 | 2010-10-28 | Panasonic Corp | 固体撮像素子 |
JP2016009813A (ja) * | 2014-06-26 | 2016-01-18 | ソニー株式会社 | 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 |
JP2019087545A (ja) * | 2017-11-01 | 2019-06-06 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
KR102507207B1 (ko) * | 2018-04-11 | 2023-03-09 | 에스케이하이닉스 주식회사 | 낮은 굴절률을 갖는 패싱 필터를 포함하는 이미지 센서 |
US10686000B1 (en) | 2019-04-12 | 2020-06-16 | Visera Technologies Company Limited | Solid-state imaging device |
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JP2014225667A (ja) | 2013-05-16 | 2014-12-04 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | Bsi型cmosイメージセンサ |
JP2019186516A (ja) | 2018-04-16 | 2019-10-24 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | 光学センサおよびその形成方法 |
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TWI773209B (zh) | 2022-08-01 |
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TW202220198A (zh) | 2022-05-16 |
CN114464635A (zh) | 2022-05-10 |
US11538839B2 (en) | 2022-12-27 |
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