JP7109310B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 309
- 238000012545 processing Methods 0.000 claims description 129
- 238000003860 storage Methods 0.000 claims description 64
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 33
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 2
- 229910008482 TiSiN Inorganic materials 0.000 claims 5
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 5
- 238000010926 purge Methods 0.000 description 37
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 24
- 239000010936 titanium Substances 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003074 TiCl4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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Description
一実施形態に係る成膜方法は、原子層堆積(ALD:Atomic Layer Deposition)法により、基板の上に珪窒化チタン(TiSiN)膜を成膜する方法である。具体的には、一実施形態に係る成膜方法は、チタン(Ti)含有ガスと窒素含有ガスとをこの順に供給する動作と、シリコン(Si)含有ガスと窒素含有ガスとをこの順に供給する動作と、を有する。以下、Ti含有ガスと窒素含有ガスとをこの順に供給する動作を「TiN形成サイクル」と称し、Si含有ガスと窒素含有ガスとをこの順に供給する動作を「SiN形成サイクル」と称する。図1は、一実施形態に係るTiSiN膜の成膜方法を示すフローチャートである。
上記のTiSiN膜の成膜方法を実現する成膜装置の一例について説明する。図2は、成膜装置の構成例を示す概略図である。
次に、図1を用いて説明した一実施形態に係る成膜方法により、回数Xと回数Yの比率、回数Z、及びSi含有ガスの一例であるDCSの流量を変化させてTiSiN膜を成膜し、それぞれのTiSiN膜の抵抗率及び膜中Si濃度を測定した。プロセス条件は、以下の通りである。
基板温度:400℃
回数Xと回数Yの比率(X:Y) 1:2,1:1
回数Z 67回,75回
5 ガス供給機構
55d 貯留タンク
6 制御部
W ウエハ
Claims (5)
- 所望の膜特性を有するTiSiN膜を成膜する成膜方法であって、
基板が収容された処理容器内にTi含有ガスと窒素含有ガスとをこの順に供給する動作をX回(Xは1以上の整数)実行してTiN膜を形成する工程と、
前記処理容器内にSi含有ガスと窒素含有ガスとをこの順に供給する動作をY回(Yは1以上の整数)実行してSiN膜を形成する工程と、
を有し、
前記TiN膜を形成する工程と前記SiN膜を形成する工程とをこの順にZ回(Zは1以上の整数)実行し、
前記SiN膜を形成する工程において、前記Si含有ガスの流量を、前記所望の膜特性に応じて定められる流量に制御し、
前記所望の膜特性は、TiSiN膜の抵抗率又はTiSiN膜の膜中Si濃度であり、
前記所望の膜特性に応じて定められる流量は、前記抵抗率又は前記膜中Si濃度と、前記Si含有ガスの流量との関係を示す関係情報とに基づいて定められる、
成膜方法。 - 前記SiN膜を形成する工程は、貯留タンク内に貯留することで所定の圧力に昇圧されたSi含有ガスを前記処理容器内に供給するステップを含み、
前記Si含有ガスの流量は、前記貯留タンク内に前記Si含有ガスを貯留するときの流量である、
請求項1に記載の成膜方法。 - 前記TiN膜を形成する工程の1回の動作におけるTi含有ガスの供給時間は0.3秒以下である、
請求項1又は2に記載の成膜方法。 - 前記SiN膜を形成する工程の1回の動作におけるSi含有ガスの供給時間は0.3秒以下である、
請求項1乃至3のいずれか一項に記載の成膜方法。 - 基板を収容する処理容器と、
前記処理容器内にTi含有ガス、Si含有ガス、及び窒素含有ガスを供給するガス供給機構と、
制御部と、
を備え、
前記制御部は、前記ガス供給機構を制御することにより、
前記処理容器内にTi含有ガスと窒素含有ガスとをこの順に供給する動作をX回(Xは1以上の整数)実行してTiN膜を形成する工程と、
前記処理容器内にSi含有ガスと窒素含有ガスとをこの順に供給する動作をY回(Yは1以上の整数)実行してSiN膜を形成する工程と、
をこの順にZ回(Zは1以上の整数)実行し、
前記SiN膜を形成する工程において、前記Si含有ガスの流量を、所望の膜特性に応じて定められる流量に制御し、
前記所望の膜特性は、TiSiN膜の抵抗率又はTiSiN膜の膜中Si濃度であり、
前記所望の膜特性に応じて定められる流量は、前記抵抗率又は前記膜中Si濃度と、前記Si含有ガスの流量との関係を示す関係情報とに基づいて定められる、
成膜装置。
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JP2015193878A (ja) | 2014-03-31 | 2015-11-05 | 東京エレクトロン株式会社 | TiSiN膜の成膜方法および成膜装置 |
JP2016034020A (ja) | 2014-07-28 | 2016-03-10 | 東京エレクトロン株式会社 | 成膜装置 |
JP2018021229A (ja) | 2016-08-03 | 2018-02-08 | 東京エレクトロン株式会社 | ガス供給装置及びガス供給方法 |
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JP2005011940A (ja) | 2003-06-18 | 2005-01-13 | Tokyo Electron Ltd | 基板処理方法、半導体装置の製造方法および半導体装置 |
JP2013145796A (ja) | 2012-01-13 | 2013-07-25 | Tokyo Electron Ltd | TiSiN膜の成膜方法および記憶媒体 |
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