JP7098220B1

JP7098220B1 - Plating equipment and plating method

Info

Publication number: JP7098220B1
Application number: JP2022067236A
Authority: JP
Inventors: 彬文濱地; 裕行門田; 浩平岡崎
Original assignee: Hitachi Power Solutions Co Ltd
Current assignee: Hitachi Power Solutions Co Ltd
Priority date: 2022-04-14
Filing date: 2022-04-14
Publication date: 2022-07-11
Anticipated expiration: 2042-04-14
Also published as: JP2023157363A

Abstract

【課題】被めっき物の表裏両面にめっき液流路を備え、めっき液をそれぞれのめっき液流路に予め設定した分流比で分流して供給し、被めっき物の表裏両面を同時かつ高速にめっき処理できるめっき装置およびめっき方法を提供する。【解決手段】本発明に係るめっき装置Ａは、めっき槽１内において把持部１２の一側面１２ａ側に形成される第一のめっき液流路１３ａおよび前記一側面１２ａの裏面となる他側面１２ｂ側に形成される第二のめっき液流路１３ｂと、めっき液循環供給口７側の保持部１１である第一の保持部１１ａに固定保持された分流部１０と、を備え、前記めっき液循環供給口７から供給されためっき液を、前記分流部１０により前記第一のめっき液流路１３ａと前記第二のめっき液流路１３ｂに予め設定した分流比で分流して供給し、前記第一のめっき液流路１３ａと前記第二のめっき液流路１３ｂとを通過するめっき液流により被めっき物５をめっき処理する。【選択図】図２Kind Code: A1 A plating solution flow path is provided on both the front and back surfaces of an object to be plated, and the plating solution is divided and supplied to each of the plating solution flow paths at a predetermined split ratio, so that both the front and back surfaces of the object to be plated can be processed simultaneously and at high speed. Provided are a plating apparatus and a plating method capable of plating. A plating apparatus (A) according to the present invention includes a first plating solution flow path (13a) formed on one side (12a) side of a grip portion (12) in a plating tank (1) and the other side surface (12b) forming the back side of the one side (12a). a second plating solution flow path 13b formed on the side of the plating solution circulation supply port 7; The plating solution supplied from the circulation supply port 7 is split and supplied to the first plating solution flow channel 13a and the second plating solution flow channel 13b by the flow dividing unit 10 at a predetermined flow dividing ratio, The object to be plated 5 is plated by the plating solution flow passing through the first plating solution flow path 13a and the second plating solution flow path 13b. [Selection drawing] Fig. 2

Description

本発明は、めっき装置およびめっき方法に関する。 The present invention relates to a plating apparatus and a plating method.

本発明の背景技術として、例えば、特許文献１に記載の技術がある。この特許文献１には、めっき槽と、該めっき槽に配設した陽極板と、該陽極板に対向して配設する被めっき物を保持する保持手段とを有するめっき装置が記載されている。このめっき装置において、前記めっき槽は、めっき液を一方向に流すめっき液流路を形成する流路壁と、前記めっき液流路に前記被めっき物のめっきしたい被めっき物表面に対応した開口部とを有している。また、このめっき装置は、前記めっき液に渦流を発生させる渦発生器と、該渦発生器に前記めっき液を送る循環ポンプとを有している。そして、このめっき装置は、前記渦発生器と前記循環ポンプとによって前記めっき液を前記めっき槽の下部より前記めっき液流路に供給し、前記めっき槽の下部より排出させる循環経路を有する。 As a background technique of the present invention, for example, there is a technique described in Patent Document 1. This Patent Document 1 describes a plating apparatus having a plating tank, an anode plate arranged in the plating tank, and a holding means for holding an object to be plated arranged facing the anode plate. .. In this plating apparatus, the plating tank has a flow path wall forming a plating solution flow path through which the plating solution flows in one direction, and an opening corresponding to the surface of the object to be plated in the plating solution flow path. Has a part. Further, this plating apparatus has a vortex generator that generates a vortex flow in the plating solution and a circulation pump that sends the plating solution to the vortex generator. The plating apparatus has a circulation path in which the plating solution is supplied from the lower part of the plating tank to the plating solution flow path by the vortex generator and the circulation pump, and discharged from the lower part of the plating tank.

特許文献１に記載のめっき装置は、循環ポンプによってめっき液の一様な流速分布を持つ高速めっき液流を形成できる。そのため、このめっき装置は、深い穴や深い溝またはアスペクト比の高い穴や溝を有する被めっき物表面に新しいめっき液を供給し易くし、高速でめっきが行える。 The plating apparatus described in Patent Document 1 can form a high-speed plating solution flow having a uniform flow rate distribution of the plating solution by a circulation pump. Therefore, this plating apparatus facilitates the supply of a new plating solution to the surface of the object to be plated having deep holes or deep grooves or holes or grooves having a high aspect ratio, and can perform plating at high speed.

特許第４４４７４３９号公報Japanese Patent No. 4447439

しかしながら、特許文献１に記載のめっき装置には片面流路しか形成されていない。従って、このめっき装置で両面をめっき処理するためには、片面ずつ２回のめっき処理を施さなければならなかった。 However, the plating apparatus described in Patent Document 1 has only a single-sided flow path. Therefore, in order to perform the plating treatment on both sides with this plating apparatus, it was necessary to perform the plating treatment twice for each side.

本発明の課題は、被めっき物の表裏両面にめっき液流路を備え、めっき液をそれぞれのめっき液流路に予め設定した分流比で分流して供給し、被めっき物の表裏両面を同時かつ高速にめっき処理できるめっき装置およびめっき方法を提供することにある。 The subject of the present invention is to provide plating liquid channels on both the front and back surfaces of the object to be plated, and supply the plating solution by dividing the plating solution into each plating solution flow path at a preset distribution ratio, and simultaneously supply both the front and back surfaces of the object to be plated. It is an object of the present invention to provide a plating apparatus and a plating method capable of plating at high speed.

前記課題を解決した本発明に係るめっき装置は、第一のめっき対象面と第二のめっき対象面とを有する薄板状の被めっき物の、前記第一のめっき対象面と前記第二のめっき対象面に同時にめっき液を供給することによって前記被めっき物を同時にめっき処理するめっき装置であって、めっき槽と、前記めっき槽内において一対の保持部により固定保持されて前記被めっき物を把持する把持部と、前記めっき槽内において前記把持部の一側面側に形成される第一のめっき液流路および前記一側面の裏面となる他側面側に形成される第二のめっき液流路と、前記めっき液を前記めっき槽の底部から前記めっき槽内に供給するめっき液循環供給口と、前記めっき液を前記めっき槽の底部から前記めっき槽外に排出するめっき液循環排出口と、前記めっき液循環供給口側の保持部である第一の保持部における前記把持部と対向する位置に固定保持される分流部と、を備え、前記めっき液循環供給口から供給された前記めっき液を、前記分流部により前記第一のめっき液流路と前記第二のめっき液流路に予め設定した分流比で分流して供給し、前記第一のめっき液流路と前記第二のめっき液流路とを通過した前記めっき液を合流して前記めっき液循環排出口から排出して形成するめっき液流により前記被めっき物をめっき処理することとしている。 The plating apparatus according to the present invention that solves the above problems is a thin plate-shaped object to be plated having a first plating target surface and a second plating target surface, the first plating target surface and the second plating. It is a plating device that simultaneously platings the object to be plated by supplying a plating solution to the target surface at the same time, and is fixedly held by a pair of holding portions in the plating tank and the plating tank to grip the object to be plated. A grip portion to be plated, a first plating solution flow path formed on one side surface side of the gripping portion in the plating tank, and a second plating solution flow path formed on the other side surface side which is the back surface of the one side surface. A plating solution circulation supply port for supplying the plating solution from the bottom of the plating tank into the plating tank, and a plating solution circulation discharge port for discharging the plating solution from the bottom of the plating tank to the outside of the plating tank. The plating solution supplied from the plating solution circulation supply port is provided with a flow dividing portion that is fixedly held at a position facing the grip portion in the first holding portion that is the holding portion on the plating solution circulation supply port side. Is diverted and supplied to the first plating solution flow path and the second plating solution flow path at a preset distribution ratio by the diversion section, and the first plating solution flow path and the second plating solution flow path are supplied. The object to be plated is plated by a plating liquid flow formed by merging the plating liquid that has passed through the liquid flow path and discharging the plating liquid from the plating liquid circulation discharge port.

本発明によれば、被めっき物の表裏両面にめっき液流路を備え、めっき液をそれぞれのめっき液流路に予め設定した分流比で分流して供給し、被めっき物の表裏両面を同時かつ高速にめっき処理できるめっき装置およびめっき方法を提供できる。 According to the present invention, a plating solution flow path is provided on both the front and back surfaces of the object to be plated, and the plating solution is divided and supplied to each plating solution flow path at a preset distribution ratio, and both the front and back surfaces of the object to be plated are simultaneously supplied. Moreover, it is possible to provide a plating apparatus and a plating method capable of plating at high speed.

本実施形態に係るめっき装置の全体構成を示す概略側面図である。It is a schematic side view which shows the whole structure of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置のめっき槽内部を説明する水平断面図である。It is a horizontal sectional view explaining the inside of the plating tank of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の保持部、把持部および分流部の構成を説明する説明図である。It is explanatory drawing explaining the structure of the holding part, the gripping part and the shunting part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す斜視図である。It is a perspective view which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す正面図である。It is a front view which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す概略断面図である。It is a schematic sectional drawing which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す、めっき液流の上流側から見た正面図である。It is a front view seen from the upstream side of the plating liquid flow which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す、めっき液流の上流側から見た正面図である。It is a front view seen from the upstream side of the plating liquid flow which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置の分流部の一態様を示す、めっき液流の上流側から見た正面図である。It is a front view seen from the upstream side of the plating liquid flow which shows one aspect of the shunt part of the plating apparatus which concerns on this embodiment. 本実施形態に係るめっき装置を用いて被めっき物に銅（Ｃｕ）をめっきする一例を示す概略説明図である。It is a schematic explanatory drawing which shows an example of plating copper (Cu) on the object to be plated using the plating apparatus which concerns on this embodiment.

以下、適宜図面を参照して、本発明の一実施形態に係るめっき装置およびめっき方法について詳細に説明する。なお、以下の説明において、上流および下流という用語は、説明対象となる装置に流れるめっき液の流れる方向における上流と下流を表す。 Hereinafter, the plating apparatus and the plating method according to the embodiment of the present invention will be described in detail with reference to the drawings as appropriate. In the following description, the terms upstream and downstream refer to upstream and downstream in the direction in which the plating solution flowing to the apparatus to be explained flows.

参照する図面において、図１は、本実施形態に係るめっき装置Ａの全体構成を示す概略側面図である。なお、図１においては、説明の便宜上、透視的に内部を図示するとともに、めっき液流を矢印で図示している。 In the reference drawing, FIG. 1 is a schematic side view showing the overall configuration of the plating apparatus A according to the present embodiment. In FIG. 1, for convenience of explanation, the inside is shown through the inside and the plating solution flow is shown by an arrow.

本実施形態に係るめっき装置Ａは、第一のめっき対象面５ａ（図２参照）と第二のめっき対象面５ｂ（図２参照）とを有する半導体ウェハなどの薄板状の被めっき物５をめっき処理する装置である。このめっき装置Ａは、第一のめっき対象面５ａと第二のめっき対象面５ｂに同時にめっき液を供給することによって、被めっき物５の表裏両面、すなわち第一のめっき対象面５ａおよび第二のめっき対象面５ｂを同時にめっき処理する。 The plating apparatus A according to the present embodiment has a thin plate-shaped object 5 such as a semiconductor wafer having a first plating target surface 5a (see FIG. 2) and a second plating target surface 5b (see FIG. 2). It is a device for plating. This plating apparatus A simultaneously supplies the plating liquid to the first plating target surface 5a and the second plating target surface 5b, so that both the front and back surfaces of the object to be plated 5, that is, the first plating target surface 5a and the second plating target surface 5a and the second. The plating target surface 5b of is simultaneously plated.

図１に示すように、めっき装置Ａは、主な構成要素として、めっき槽１、めっき液供給路２、めっき液回収路３、および循環ポンプ４を有している。循環ポンプ４はインバータにより回転速度を可変制御可能であり、めっき液を高速で循環させることができるとともに、めっき液の流速を制御できる。めっき液供給路２は、めっき槽１のめっき液循環供給口７と循環ポンプ４の吐出側とを接続する。めっき液回収路３は、めっき液循環排出口８と循環ポンプ４の吸込側とを接続する。循環ポンプ４は、所定の吐出圧によってめっき液をめっき液循環供給口７からめっき槽１に流入して、めっき液循環排出口８からめっき液を排出し、循環ポンプ４に回収する循環路によってめっき液流を形成し、めっき液を循環させる。 As shown in FIG. 1, the plating apparatus A has a plating tank 1, a plating solution supply path 2, a plating solution recovery path 3, and a circulation pump 4 as main components. The circulation pump 4 can variably control the rotation speed by an inverter, can circulate the plating solution at high speed, and can control the flow velocity of the plating solution. The plating solution supply path 2 connects the plating solution circulation supply port 7 of the plating tank 1 and the discharge side of the circulation pump 4. The plating solution recovery path 3 connects the plating solution circulation discharge port 8 and the suction side of the circulation pump 4. The circulation pump 4 has a circulation path in which the plating solution flows into the plating tank 1 from the plating solution circulation supply port 7 by a predetermined discharge pressure, the plating solution is discharged from the plating solution circulation discharge port 8, and the plating solution is collected in the circulation pump 4. A plating solution flow is formed and the plating solution is circulated.

次に、図２を参照して、めっき装置Ａのめっき槽１の内部を説明する。図２は、本実施形態に係るめっき装置Ａのめっき槽１の内部を説明する水平断面図である。
図２に示すように、めっき槽１は、めっき槽１内において一対の保持部１１により固定保持されて被めっき物５を把持する把持部１２を備えている。めっき槽１は、めっき槽１内において第一のめっき対象面５ａに隣接して形成する第一のめっき液流路１３ａおよび第二のめっき対象面５ｂに隣接して形成する第二のめっき液流路１３ｂを備えている。すなわち、めっき槽１は、めっき槽１内において把持部１２の一側面１２ａ側に形成される第一のめっき液流路１３ａおよび前記した一側面１２ａの裏面となる他側面１２ｂ側に形成される第二のめっき液流路１３ｂを備えている。また、めっき槽１は、めっき液をめっき槽１の底部からめっき槽１内に供給するめっき液循環供給口７を備えている。さらに、めっき槽１は、めっき液をめっき槽１の底部からめっき槽１外に排出するめっき液循環排出口８を備えている。めっき槽１は、めっき液循環供給口７側の保持部１１である第一の保持部１１ａにおける把持部１２と対向する位置に固定保持される分流部１０を備えている。 Next, the inside of the plating tank 1 of the plating apparatus A will be described with reference to FIG. FIG. 2 is a horizontal sectional view illustrating the inside of the plating tank 1 of the plating apparatus A according to the present embodiment.
As shown in FIG. 2, the plating tank 1 includes a grip portion 12 that is fixedly held by a pair of holding portions 11 in the plating tank 1 to grip the object to be plated 5. The plating tank 1 is a second plating solution formed in the plating tank 1 adjacent to the first plating target surface 5a and adjacent to the first plating liquid flow path 13a and the second plating target surface 5b. It is provided with a flow path 13b. That is, the plating tank 1 is formed in the plating tank 1 on the one side surface 12a side of the grip portion 12 and the other side surface 12b side which is the back surface of the one side surface 12a. A second plating solution flow path 13b is provided. Further, the plating tank 1 is provided with a plating liquid circulation supply port 7 for supplying the plating liquid from the bottom of the plating tank 1 into the plating tank 1. Further, the plating tank 1 is provided with a plating liquid circulation discharge port 8 for discharging the plating liquid from the bottom of the plating tank 1 to the outside of the plating tank 1. The plating tank 1 includes a shunt portion 10 which is fixedly held at a position facing the grip portion 12 in the first holding portion 11a which is a holding portion 11 on the plating liquid circulation supply port 7 side.

めっき装置Ａは、めっき液循環供給口７から供給されためっき液を、分流部１０により第一のめっき液流路１３ａと第二のめっき液流路１３ｂに所定の比率で分流して供給し、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとを通過しためっき液を合流してめっき液循環排出口８から排出して形成するめっき液流を形成できる。このめっき液流は、循環ポンプ４により循環されるため、高速で流れるだけでなく、めっき液の一様な流速分布を持つ。したがって、めっき装置Ａは、このめっき液流により、被めっき物５の第一のめっき対象面５ａと第二のめっき対象面５ｂとを同時かつ高速にめっき処理できる。 The plating apparatus A divides and supplies the plating liquid supplied from the plating liquid circulation supply port 7 to the first plating liquid flow path 13a and the second plating liquid flow path 13b by the flow dividing unit 10 at a predetermined ratio. , The plating liquid that has passed through the first plating liquid flow path 13a and the second plating liquid flow path 13b can be merged and discharged from the plating liquid circulation discharge port 8 to form a plating liquid flow. Since this plating solution flow is circulated by the circulation pump 4, it not only flows at high speed but also has a uniform flow velocity distribution of the plating solution. Therefore, the plating apparatus A can simultaneously and at high speed plate the first plating target surface 5a and the second plating target surface 5b of the object to be plated 5 by this plating liquid flow.

一対の保持部１１のうち第一の保持部１１ａは、めっき液導入流路９が、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとに接続する位置であるとともに、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとの中間となる位置に配設する。 The first holding portion 11a of the pair of holding portions 11 is a position where the plating liquid introduction flow path 9 is connected to the first plating liquid flow path 13a and the second plating liquid flow path 13b, and is a second. It is arranged at a position intermediate between the first plating solution flow path 13a and the second plating solution flow path 13b.

また、めっき液循環排出口８側のものである第二の保持部１１ｂは、めっき液排出流路１５が、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとに接続する位置であるとともに、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとの中間となる位置に配設する。 Further, in the second holding portion 11b on the plating liquid circulation discharge port 8, the plating liquid discharge flow path 15 is connected to the first plating liquid flow path 13a and the second plating liquid flow path 13b. It is arranged at a position intermediate between the first plating solution flow path 13a and the second plating solution flow path 13b.

次に、図２および図３を参照して、一対の保持部１１により分流部１０と把持部１２とを保持する構造、および把持部１２により被めっき物５を把持する構造について説明する。図３は、本実施形態に係るめっき装置Ａの保持部１１、把持部１２および分流部１０の構成を説明する説明図である。 Next, with reference to FIGS. 2 and 3, a structure in which the shunt portion 10 and the grip portion 12 are held by the pair of holding portions 11 and a structure in which the object to be plated 5 is gripped by the grip portions 12 will be described. FIG. 3 is an explanatory diagram illustrating the configuration of the holding portion 11, the gripping portion 12, and the shunting portion 10 of the plating apparatus A according to the present embodiment.

保持部１１は、柱状構造物である第一の保持部１１ａと第二の保持部１１ｂとにより構成する。第一の保持部１１ａは、めっき液循環供給口７側に配設する。第二の保持部１１ｂは、めっき液循環排出口８側に配設する。把持部１２の両端には、端部（側面）から外側方向に突出するリッジ部１２ｃ、１２ｃが設けられている。第一の保持部１１ａおよび第二の保持部１１ｂは、把持部１２の両端のリッジ部１２ｃを差し仕込むように対向して配置する溝１１ｃを有している。前記したリッジ部１２ｃ、１２ｃはそれぞれ、第一の保持部１１ａの溝１１ｃおよび第二の保持部１１ｂの溝１１ｃに差し込んでの着脱が可能な幅寸法および高さ寸法で形成されている。被めっき物５を把持部１２で把持し、その状態で把持部１２のリッジ部１２ｃを前記溝１１ｃに差し込むことにより、把持部１２を保持部１１に保持する。 The holding portion 11 is composed of a first holding portion 11a and a second holding portion 11b, which are columnar structures. The first holding portion 11a is arranged on the plating solution circulation supply port 7 side. The second holding portion 11b is arranged on the plating solution circulation discharge port 8 side. Ridge portions 12c and 12c protruding outward from the end portion (side surface) are provided at both ends of the grip portion 12. The first holding portion 11a and the second holding portion 11b have grooves 11c which are arranged so as to insert the ridge portions 12c at both ends of the grip portion 12 so as to be opposed to each other. The ridge portions 12c and 12c described above are formed with a width dimension and a height dimension that can be inserted into and detached from the groove 11c of the first holding portion 11a and the groove 11c of the second holding portion 11b, respectively. The object to be plated 5 is gripped by the grip portion 12, and in that state, the ridge portion 12c of the grip portion 12 is inserted into the groove 11c to hold the grip portion 12 in the holding portion 11.

さらに、第一の保持部１１ａには、めっき液流の上流側に分流部１０を当接して固定保持する。
把持部１２は、把持部本体１２１と取付枠１７から構成する。把持部本体１２１の水平方向（めっき液流の流れる方向）の大きさは被めっき物５の大きさに依存せず、第一の保持部１１ａの溝１１ｃと第二の保持部１１ｂの溝１１ｃとの離間距離に等しく、溝１１ｃにリッジ部１２ｃを差し込んで保持することが可能となっている。 Further, the shunt portion 10 is brought into contact with the first holding portion 11a on the upstream side of the plating solution flow and fixedly held.
The grip portion 12 is composed of a grip portion main body 121 and a mounting frame 17. The size of the grip portion main body 121 in the horizontal direction (direction in which the plating solution flow flows) does not depend on the size of the object to be plated 5, and the groove 11c of the first holding portion 11a and the groove 11c of the second holding portion 11b. The ridge portion 12c can be inserted and held in the groove 11c, which is equal to the distance from the groove 11c.

取付枠１７は、被めっき物５の大きさによって定まる開口部１８を有する。取付枠１７は、開口部１８の全周にわたって被めっき物５と直流電源の負極側とを接続する電極１６を備え、被めっき物５の縁を全周に亘って挟みこむようにして固定把持する。
該電極１６は、第一のめっき対象面５ａに対応する第一の電極１６ａ（図７参照）、および第二のめっき対象面５ｂに対応する第二の電極１６ｂ（図７参照）により構成する。
なお、開口部１８の形状は、被めっき物５の形状に従って決定する。従って、開口部１８の形状は、円形の場合もあれば、四角形の場合もある。 The mounting frame 17 has an opening 18 determined by the size of the object to be plated 5. The mounting frame 17 includes an electrode 16 that connects the object to be plated 5 and the negative electrode side of the DC power supply over the entire circumference of the opening 18, and is fixedly gripped so as to sandwich the edge of the object to be plated 5 over the entire circumference.
The electrode 16 is composed of a first electrode 16a (see FIG. 7) corresponding to the first plating target surface 5a and a second electrode 16b (see FIG. 7) corresponding to the second plating target surface 5b. ..
The shape of the opening 18 is determined according to the shape of the object to be plated 5. Therefore, the shape of the opening 18 may be circular or quadrangular.

次に、分流部１０について図４から図６により説明する。なお、図４Ａは、本実施形態に係るめっき装置Ａの分流部１０の一態様を示す斜視図である。図４Ｂ～図４Ｄは、本実施形態に係るめっき装置Ａの分流部１０の一態様を示す概略断面図である。図５Ａは、本実施形態に係るめっき装置Ａの分流部１０の一態様を示す正面図である。図５Ｂ～図５Ｄは、本実施形態に係るめっき装置Ａの分流部１０の一態様を示す概略断面図である。図６Ａ～図６Ｃは、本実施形態に係るめっき装置Ａの分流部１０の一態様を示す、めっき液流の上流側から見た正面図である。 Next, the shunt section 10 will be described with reference to FIGS. 4 to 6. Note that FIG. 4A is a perspective view showing one aspect of the shunt portion 10 of the plating apparatus A according to the present embodiment. 4B to 4D are schematic cross-sectional views showing one aspect of the shunt portion 10 of the plating apparatus A according to the present embodiment. FIG. 5A is a front view showing one aspect of the shunt portion 10 of the plating apparatus A according to the present embodiment. 5B to 5D are schematic cross-sectional views showing one aspect of the shunt portion 10 of the plating apparatus A according to the present embodiment. 6A to 6C are front views seen from the upstream side of the plating solution flow, showing one aspect of the shunt portion 10 of the plating apparatus A according to the present embodiment.

分流部１０は、めっき液導入流路９を介してめっき液循環供給口７から供給されるめっき液流を、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとに分流する。その分流する比率を示す分流比は、被めっき物５の第一のめっき対象面５ａの第一の回路パターンに基づく第一のめっき条件と、被めっき物５の第二のめっき対象面５ｂの第二の回路パターンに基づく第二のめっき条件とに基づいて予め設定しておく。なお、めっき条件は、めっき処理に用いる電流の値とめっき液流の流速とによって定めるものである。めっき液流の流速に関しては、循環ポンプ４の回転速度を制御することによって調整するが、より効果的にするため、第一のめっき液流路１３ａおよび第二のめっき液流路１３ｂは、流路幅を１０ｍｍ以下にすることが望ましい。 The diversion section 10 divides the plating liquid flow supplied from the plating liquid circulation supply port 7 via the plating liquid introduction flow path 9 into the first plating liquid flow path 13a and the second plating liquid flow path 13b. .. The shunting ratio indicating the shunting ratio is the first plating condition based on the first circuit pattern of the first plating target surface 5a of the object to be plated 5 and the second plating target surface 5b of the object to be plated 5. It is set in advance based on the second plating condition based on the second circuit pattern. The plating conditions are determined by the value of the current used in the plating process and the flow velocity of the plating solution flow. The flow rate of the plating solution flow is adjusted by controlling the rotation speed of the circulation pump 4, but in order to make it more effective, the first plating solution flow path 13a and the second plating solution flow path 13b are flow rates. It is desirable that the road width is 10 mm or less.

めっき槽１において分流比は、図４Ｂ～図４Ｄ、図５Ｂ～図５Ｄ、図６Ａ～図６Ｃに示すように、第一のめっき液流路１３ａの第一のめっき液取込口２２ａと、第二のめっき液流路１３ｂの第二のめっき液取込口２２ｂとの面積比で設定する。 As shown in FIGS. 4B to 4D, FIGS. 5B to 5D, and FIGS. 6A to 6C, the diversion ratios in the plating tank 1 are the first plating solution intake port 22a of the first plating solution flow path 13a. The area ratio of the second plating solution flow path 13b to the second plating solution intake port 22b is set.

次に、第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂとの面積比の設定について詳述する。これらの面積比は、分流部１０の形状によって設定する。該形状は、二つのケースがある。 Next, the setting of the area ratio between the first plating solution intake port 22a and the second plating solution intake port 22b will be described in detail. These area ratios are set according to the shape of the shunt portion 10. The shape has two cases.

第一のケースは、図４Ａに示すように、分流部１０の形状が、長手方向に垂直な断面の外線が三角形を形成する柱状構造物（三角柱構造物）である。該柱状構造物を、当該三角形の何れかの頂点を含む長手方向の稜線を示す分流辺２１がめっき液流の上流側を向くように配設すると共に、分流辺２１に対向する底面により保持部１１（具体的には、第一の保持部１１ａ）に固定保持する。また、第一のめっき液流路１３ａの第一のめっき液取込口２２ａと、第二のめっき液流路１３ｂの第二のめっき液取込口２２ｂとの面積比が前述の分流比になるように、頂点を挟む当該三角形の二辺の長さ比率を設定する。 As shown in FIG. 4A, the first case is a columnar structure (triangular prism structure) in which the shape of the diversion portion 10 forms a triangle with an outer line having a cross section perpendicular to the longitudinal direction. The columnar structure is arranged so that the diversion side 21 indicating the ridgeline in the longitudinal direction including any of the vertices of the triangle faces the upstream side of the plating solution flow, and the holding portion is provided by the bottom surface facing the diversion side 21. It is fixedly held to 11 (specifically, the first holding portion 11a). Further, the area ratio between the first plating solution intake port 22a of the first plating solution flow path 13a and the second plating solution intake port 22b of the second plating solution flow path 13b is the above-mentioned diversion ratio. The length ratio of the two sides of the triangle sandwiching the apex is set so as to be.

図４Ｂ～図４Ｄに示すように、めっき液取込口２２は、上流側を向いた三角形の頂点を境として、第一の斜辺１９ａ側の第一のめっき液取込口２２ａと、第二の斜辺１９ｂ側の第二のめっき液取込口２２ｂと、により構成される。図４Ｂ～図４Ｄに示すように、第一のケースでは、第一の斜辺１９ａと第二の斜辺１９ｂの長さ比率によって、第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂとの面積比を設定する。 As shown in FIGS. 4B to 4D, the plating solution intake port 22 has the first plating solution intake port 22a on the first hypotenuse side 19a side and the second plating solution intake port 22a with the apex of the triangle facing the upstream side as a boundary. It is composed of a second plating solution intake port 22b on the hypotenuse side 19b side of the above. As shown in FIGS. 4B to 4D, in the first case, the first plating solution intake port 22a and the second plating solution intake are performed according to the length ratio of the first hypotenuse 19a and the second hypotenuse 19b. Set the area ratio with the mouth 22b.

分流比を５０％対５０％で設定する場合について図４Ｂにより説明する。この場合は、第一の斜辺１９ａと第二の斜辺１９ｂとの長さを同じにする（第一の斜辺１９ａ＝第二の斜辺１９ｂ）。これにより、第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂとの開口面積が等しくなり、第一のめっき液流路１３ａと第二のめっき液流路１３ｂに供給するめっき液流は、同量となる。 A case where the shunt ratio is set to 50% to 50% will be described with reference to FIG. 4B. In this case, the lengths of the first hypotenuse 19a and the second hypotenuse 19b are made the same (first hypotenuse 19a = second hypotenuse 19b). As a result, the opening areas of the first plating solution intake port 22a and the second plating solution intake port 22b become equal, and are supplied to the first plating solution flow path 13a and the second plating solution flow path 13b. The plating solution flow will be the same amount.

第一のめっき液流路１３ａへのめっき液流供給量を第二のめっき液流路１３ｂへのめっき液流供給量よりも多くする場合について図４Ｃにより説明する。この場合は、分流比に基づいて第一の斜辺１９ａを第二の斜辺１９ｂよりも長くする（第一の斜辺１９ａ＞第二の斜辺１９ｂ）。これにより、第一のめっき液取込口２２ａの開口面積は第二のめっき液取込口２２ｂの開口面積よりも大きくなり、第一のめっき液流路１３ａに供給するめっき液流は第二のめっき液流路１３ｂに供給するめっき液流よりも多くなる。 A case where the amount of the plating liquid flow supplied to the first plating liquid flow path 13a is larger than the amount of the plating liquid flow supplied to the second plating liquid flow path 13b will be described with reference to FIG. 4C. In this case, the first hypotenuse 19a is made longer than the second hypotenuse 19b based on the shunt ratio (first hypotenuse 19a> second hypotenuse 19b). As a result, the opening area of the first plating solution intake port 22a becomes larger than the opening area of the second plating solution intake port 22b, and the plating solution flow supplied to the first plating solution flow path 13a is the second. It is larger than the plating liquid flow supplied to the plating liquid flow path 13b.

第二のめっき液流路１３ｂへのめっき液流供給量を第一のめっき液流路１３ａへのめっき液流供給量よりも多くする場合について図４Ｄにより説明する。この場合は、分流比に基づいて第二の斜辺１９ｂを第一の斜辺１９ａよりも長くする（第一の斜辺１９ａ＜第二の斜辺１９ｂ）。これにより、第二のめっき液取込口２２ｂの開口面積は第一のめっき液取込口２２ａの開口面積よりも大きくなり、第二のめっき液流路１３ｂに供給するめっき液流は第一のめっき液流路１３ａに供給するめっき液流よりも多くなる。 A case where the amount of the plating liquid flow supplied to the second plating liquid flow path 13b is larger than the amount of the plating liquid flow supplied to the first plating liquid flow path 13a will be described with reference to FIG. 4D. In this case, the second hypotenuse 19b is made longer than the first hypotenuse 19a based on the shunt ratio (first hypotenuse 19a <second hypotenuse 19b). As a result, the opening area of the second plating solution intake port 22b becomes larger than the opening area of the first plating solution intake port 22a, and the plating solution flow supplied to the second plating solution flow path 13b is the first. It is larger than the plating liquid flow supplied to the plating liquid flow path 13a.

次に、分流部１０の形状の第二のケースについて説明する。
第二のケースは、図５Ａに示すように、分流部１０の形状が、長手方向に垂直な断面の外線が四角形を形成する柱状構造物（四角柱構造物）である。該柱状構造物は、前記めっき液流の下流側に隣接する保持部１１（具体的には、第一の保持部１１ａ）に一平面によって固定保持する。すなわち、該柱状構造物は、第一の保持部１１ａのめっき液循環供給口７と相対する側の面に一平面によって固定保持する。 Next, a second case of the shape of the shunt portion 10 will be described.
In the second case, as shown in FIG. 5A, the shape of the diversion portion 10 is a columnar structure (square columnar structure) in which an outer line having a cross section perpendicular to the longitudinal direction forms a quadrangle. The columnar structure is fixedly held by a single plane on a holding portion 11 (specifically, a first holding portion 11a) adjacent to the downstream side of the plating solution flow. That is, the columnar structure is fixedly held by one plane on the surface of the first holding portion 11a on the side facing the plating solution circulation supply port 7.

また、第一のめっき液流路１３ａの第一のめっき液取込口２２ａと、第二のめっき液流路１３ｂの第二のめっき液取込口２２ｂと、の面積比が前述の分流比になるように、第一のめっき液流路１３ａへのめっき液流の流入量を制限するように分流部１０の一部が第一のめっき液流路１３ａに張り出して形成する第一の遮蔽部２３ａの大きさ、または、第二のめっき液流路１３ｂへのめっき液流の流入量を制限するように分流部１０の一部が第二のめっき液流路１３ｂに張り出して形成する第二の遮蔽部２３ｂの大きさを設定する。 Further, the area ratio between the first plating solution intake port 22a of the first plating solution flow path 13a and the second plating solution intake port 22b of the second plating solution flow path 13b is the above-mentioned diversion ratio. A first shield formed by a part of the diversion portion 10 projecting to the first plating solution flow path 13a so as to limit the inflow amount of the plating solution flow into the first plating solution flow path 13a. A part of the diversion portion 10 is formed so as to project to the second plating solution flow path 13b so as to limit the size of the portion 23a or the inflow amount of the plating solution flow into the second plating solution flow path 13b. The size of the second shielding portion 23b is set.

第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂは、めっき液流の流入量を制限しない方は遮蔽部の大きさをゼロとして開口面積を１００％とし、めっき液流の流入量を制限する方は分流比によって定まる遮蔽部を張り出すことにより開口面積の大きさを設定する。 For the first plating solution intake port 22a and the second plating solution intake port 22b, the size of the shielding portion is set to zero and the opening area is set to 100% for those who do not limit the inflow amount of the plating solution flow, and the plating solution flow is set to 100%. For those who limit the amount of inflow, the size of the opening area is set by overhanging the shielding part determined by the diversion ratio.

分流比を５０％対５０％で設定する場合について図５Ｂにより説明する。この場合は、第一の遮蔽部２３ａと第二の遮蔽部２３ｂとの大きさをゼロにする。これにより、第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂとの開口面積が等しくなり、第一のめっき液流路１３ａと第二のめっき液流路１３ｂに供給するめっき液流は、同量となる。 A case where the shunt ratio is set to 50% to 50% will be described with reference to FIG. 5B. In this case, the size of the first shielding portion 23a and the second shielding portion 23b is set to zero. As a result, the opening areas of the first plating solution intake port 22a and the second plating solution intake port 22b become equal, and are supplied to the first plating solution flow path 13a and the second plating solution flow path 13b. The plating solution flow will be the same amount.

第一のめっき液流路１３ａへのめっき液流供給量を第二のめっき液流路１３ｂへのめっき液流供給量よりも多くする場合について図５Ｃにより説明する。この場合は、第一の遮蔽部２３ａの大きさをゼロとし、第二の遮蔽部２３ｂの大きさを分流比によって定まる大きさとする。これにより、第一のめっき液取込口２２ａの開口面積は第二のめっき液取込口２２ｂの開口面積よりも大きくなり、第一のめっき液流路１３ａに供給するめっき液流は第二のめっき液流路１３ｂに供給するめっき液流よりも多くなる。 A case where the amount of the plating liquid flow supplied to the first plating liquid flow path 13a is larger than the amount of the plating liquid flow supplied to the second plating liquid flow path 13b will be described with reference to FIG. 5C. In this case, the size of the first shielding portion 23a is set to zero, and the size of the second shielding portion 23b is set to a size determined by the shunt ratio. As a result, the opening area of the first plating solution intake port 22a becomes larger than the opening area of the second plating solution intake port 22b, and the plating solution flow supplied to the first plating solution flow path 13a is the second. It is larger than the plating liquid flow supplied to the plating liquid flow path 13b.

第二のめっき液流路１３ｂへのめっき液流供給量を第一のめっき液流路１３ａへのめっき液流供給量よりも多くする場合について図５Ｄにより説明する。この場合は、第二の遮蔽部２３ｂの大きさをゼロとし、第一の遮蔽部２３ａの大きさを分流比によって定まる大きさとする。これにより、第二のめっき液取込口２２ｂの開口面積は第一のめっき液取込口２２ａの開口面積よりも大きくなり、第二のめっき液流路１３ｂに供給するめっき液流は第一のめっき液流路１３ａに供給するめっき液流よりも多くなる。 A case where the amount of the plating liquid flow supplied to the second plating liquid flow path 13b is larger than the amount of the plating liquid flow supplied to the first plating liquid flow path 13a will be described with reference to FIG. 5D. In this case, the size of the second shielding portion 23b is set to zero, and the size of the first shielding portion 23a is set to a size determined by the shunt ratio. As a result, the opening area of the second plating solution intake port 22b becomes larger than the opening area of the first plating solution intake port 22a, and the plating solution flow supplied to the second plating solution flow path 13b is the first. It is larger than the plating liquid flow supplied to the plating liquid flow path 13a.

なお、分流部１０が四角形の柱状構造物の場合、遮蔽部は、図６Ａに示すように、単に四角形の構造のうちの対辺により第一のめっき液取込口２２ａおよび第二のめっき液取込口２２ｂを設けた構造とすることができる。また、遮蔽部は、図６Ｂに示すように、スリット部により第一のめっき液取込口２２ａおよび第二のめっき液取込口２２ｂを設けた構造とすることができる。また、遮蔽部は、図６Ｃに示すように、切欠部により第一のめっき液取込口２２ａおよび第二のめっき液取込口２２ｂを設けた構造とすることができる。これらのいずれの態様も、第一のめっき液流路１３ａと第二のめっき液流路１３ｂに供給するめっき液流の分流比を適切に制御できる。 When the flow dividing portion 10 is a quadrangular columnar structure, as shown in FIG. 6A, the shielding portion is simply the opposite side of the quadrangular structure to take the first plating solution intake port 22a and the second plating solution. The structure may be provided with the inlet 22b. Further, as shown in FIG. 6B, the shielding portion may have a structure in which the first plating solution intake port 22a and the second plating solution intake port 22b are provided by the slit portion. Further, as shown in FIG. 6C, the shielding portion may have a structure in which the first plating solution intake port 22a and the second plating solution intake port 22b are provided by the notch portion. In any of these embodiments, the shunt ratio of the plating solution flow supplied to the first plating solution flow path 13a and the second plating solution flow path 13b can be appropriately controlled.

図７に、本実施形態に係るめっき装置Ａを用いて銅（Ｃｕ）をめっきする一例を示す。なお、図７は、本実施形態に係るめっき装置Ａを用いて被めっき物５に銅をめっきする一例を示す概略説明図である。 FIG. 7 shows an example of plating copper (Cu) using the plating apparatus A according to the present embodiment. Note that FIG. 7 is a schematic explanatory view showing an example of plating copper on the object to be plated 5 using the plating apparatus A according to the present embodiment.

第一のめっき液流路１３ａは、被めっき物５の遠方側に第一の陽極板１４ａを備える。つまり、第一のめっき液流路１３ａは、把持部１２の一側面１２ａと所定の間隔をあけて相対する第一の陽極板１４ａを備える。
第二のめっき液流路１３ｂは、被めっき物５の遠方側に第二の陽極板１４ｂを備える。つまり、第二のめっき液流路１３ｂは、把持部１２の他側面１２ｂと所定の間隔をあけて相対する第二の陽極板１４ｂを備える。
この場合、第一の陽極板１４ａおよび第二の陽極板１４ｂはいずれも銅（純銅）で形成されている。なお、第一の陽極板１４ａおよび第二の陽極板１４ｂは、形成するめっき膜に応じて金、銀、白金など任意に変更可能である。 The first plating solution flow path 13a includes a first anode plate 14a on the far side of the object to be plated 5. That is, the first plating solution flow path 13a includes a first anode plate 14a facing one side surface 12a of the grip portion 12 at a predetermined distance.
The second plating solution flow path 13b includes a second anode plate 14b on the far side of the object to be plated 5. That is, the second plating solution flow path 13b includes a second anode plate 14b facing the other side surface 12b of the grip portion 12 at a predetermined distance.
In this case, both the first anode plate 14a and the second anode plate 14b are made of copper (pure copper). The first anode plate 14a and the second anode plate 14b can be arbitrarily changed to gold, silver, platinum or the like depending on the plating film to be formed.

ユーザが、電気めっきに使用する第一の直流電源２４ａの正極を第一の陽極板１４ａに接続し、第一の直流電源２４ａの負極を把持部１２内の第一の電極１６ａを介して第一のめっき対象面５ａに接続する。また、ユーザが、第二の直流電源２４ｂの正極を第二の陽極板１４ｂに接続し、第二の直流電源２４ｂの負極を把持部１２内の第二の電極１６ｂを介して第二のめっき対象面５ｂに接続する。 The user connects the positive electrode of the first DC power supply 24a used for electroplating to the first anode plate 14a, and the negative electrode of the first DC power supply 24a is connected to the first electrode 16a in the grip portion 12. It is connected to one plating target surface 5a. Further, the user connects the positive electrode of the second DC power supply 24b to the second anode plate 14b, and the negative electrode of the second DC power supply 24b is plated with the second electrode 16b in the grip portion 12. Connect to the target surface 5b.

めっき装置Ａは、第一のめっき条件に基づいて第一の直流電源２４ａにより第一の電極１６ａを介して所定電流を付与する。また、めっき装置Ａは、第二のめっき条件に基づいて第二の直流電源２４ｂにより第二の電極１６ｂを介して所定電流を付与する。このようにすることにより、めっき装置Ａは、電気めっきにより銅イオン（Ｃｕ^２＋）をそれぞれのめっき対象面に誘導して被めっき物５の表面に銅をめっきする。
なお、第一の電極１６ａおよび第二の電極１６ｂは、めっき対象面の電流密度を一様にするために、めっき対象面の外周部全周に配する（図３参照）。
把持部１２本体には、図示していないが、電極１６と直流電源からくる導線とを結ぶ電線が溝を切って配置され、ねじや樹脂で固定されている。 The plating apparatus A applies a predetermined current through the first electrode 16a by the first DC power supply 24a based on the first plating condition. Further, the plating apparatus A applies a predetermined current through the second electrode 16b by the second DC power supply 24b based on the second plating condition. By doing so, the plating apparatus A induces copper ions (Cu ²⁺ ) to the respective plating target surfaces by electroplating to plate the surface of the object to be plated 5 with copper.
The first electrode 16a and the second electrode 16b are arranged all around the outer peripheral portion of the plating target surface in order to make the current density of the plating target surface uniform (see FIG. 3).
Although not shown, an electric wire connecting the electrode 16 and the conducting wire coming from the DC power supply is arranged in the grip portion 12 body by cutting a groove and fixed with a screw or a resin.

次に、本実施形態に係るめっき方法について説明する。
本めっき方法は、前述しためっき装置Ａを用いてめっき処理を行うものである。なお、めっき装置Ａの構成については、既に詳述しているので説明を省略する。 Next, the plating method according to this embodiment will be described.
In this plating method, the plating process is performed using the plating apparatus A described above. Since the configuration of the plating apparatus A has already been described in detail, the description thereof will be omitted.

本めっき方法は、まず、ユーザの操作により、めっき槽１内にめっき液が供給される。次に、ユーザは被めっき物５を把持部１２で把持する。次に、ユーザは被めっき物５を把持した把持部１２の両端のリッジ部１２ｃをめっき槽１内の一対の保持部１１の溝１１ｃに差し込み、固定保持させる。そして、ユーザはめっき装置Ａを操作して直流電源から電流を付与し、被めっき物５のめっき処理を行う。電流の付与は、前述したように、第一の直流電源２４ａにより、被めっき物５の第一のめっき対象面５ａの第一の回路パターンに基づく第一のめっき条件に基づいて設定するとよい。同様に、電流の付与は、前述したように、第二の直流電源２４ｂにより、被めっき物５の第二のめっき対象面５ｂの第二の回路パターンに基づく第二のめっき条件に基づいて設定するとよい。 In this plating method, first, a plating solution is supplied into the plating tank 1 by a user's operation. Next, the user grips the object to be plated 5 with the grip portion 12. Next, the user inserts the ridge portions 12c at both ends of the grip portion 12 that grips the object to be plated 5 into the grooves 11c of the pair of holding portions 11 in the plating tank 1 and holds them fixedly. Then, the user operates the plating apparatus A to apply a current from the DC power source to perform the plating process of the object to be plated 5. As described above, the current application may be set by the first DC power supply 24a based on the first plating condition based on the first circuit pattern of the first plating target surface 5a of the object to be plated 5. Similarly, as described above, the current application is set by the second DC power supply 24b based on the second plating condition based on the second circuit pattern of the second plating target surface 5b of the object to be plated 5. It is good to do.

そして、本めっき方法は、めっき液循環供給口７から供給されためっき液を、分流部１０により第一のめっき液流路１３ａと第二のめっき液流路１３ｂに予め設定した分流比で分流して供給し、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとを通過しためっき液を合流してめっき液循環排出口８から排出して形成するめっき液流により被めっき物５をめっき処理できる。 Then, in this plating method, the plating solution supplied from the plating solution circulation supply port 7 is divided by the flow dividing section 10 at a preset flow dividing ratio in the first plating solution flow path 13a and the second plating solution flow path 13b. It is supplied by flowing, and the plating liquid that has passed through the first plating liquid flow path 13a and the second plating liquid flow path 13b is merged and discharged from the plating liquid circulation discharge port 8 to be plated by the plating liquid flow formed. The object 5 can be plated.

以上に説明したように、めっき装置Ａおよびめっき方法は、前述しためっき槽１と、把持部１２と、第一のめっき液流路１３ａおよび第二のめっき液流路１３ｂと、めっき液循環供給口７と、めっき液循環排出口８と、分流部１０とを備えている。したがって、めっき装置Ａおよびめっき方法は、めっき液循環供給口７から供給されためっき液を、分流部１０により第一のめっき液流路１３ａと第二のめっき液流路１３ｂに予め設定した分流比で分流して供給し、第一のめっき液流路１３ａと第二のめっき液流路１３ｂとを通過しためっき液を合流してめっき液循環排出口８から排出して形成するめっき液流を得ることができる。めっき装置Ａおよびめっき方法は、このようにして形成されためっき液流により被めっき物５をめっき処理する。つまり、めっき装置Ａおよびめっき方法は、被めっき物５の表裏両面に予め設定した分流比でめっき液を分流して供給できるめっき液流路を備えており、それにより被めっき物５の表裏両面を同時かつ高速にめっき処理できる。
また、めっき装置Ａおよびめっき方法は、前述した構成としているので、被めっき物５として近年主流となっている貫通孔を有する半導体基板などに対して、貫通孔内のめっき処理を均一に行うことが容易となり、歩留まりが向上する。 As described above, the plating apparatus A and the plating method include the plating tank 1 described above, the grip portion 12, the first plating solution flow path 13a and the second plating solution flow path 13b, and the plating solution circulation supply. It is provided with a port 7, a plating solution circulation / discharging port 8, and a flow dividing portion 10. Therefore, in the plating apparatus A and the plating method, the plating solution supplied from the plating solution circulation supply port 7 is previously set in the first plating solution flow path 13a and the second plating solution flow path 13b by the diversion section 10. A plating solution flow formed by splitting and supplying the plating solution at a ratio, merging the plating solution that has passed through the first plating solution flow path 13a and the second plating solution flow path 13b, and discharging the plating solution from the plating solution circulation discharge port 8. Can be obtained. In the plating apparatus A and the plating method, the object to be plated 5 is plated by the plating liquid flow thus formed. That is, the plating apparatus A and the plating method are provided with a plating solution flow path capable of shunting and supplying the plating solution at a preset distribution ratio on both the front and back surfaces of the object to be plated 5, whereby both the front and back surfaces of the object to be plated 5 are provided. Can be plated at the same time and at high speed.
Further, since the plating apparatus A and the plating method have the above-mentioned configurations, the plating treatment in the through holes is uniformly performed on the semiconductor substrate having the through holes, which has become the mainstream in recent years as the object to be plated 5. Is easy, and the yield is improved.

以上、本発明に係るめっき装置Ａおよびめっき方法について実施形態により詳細に説明したが、本発明は前記した実施形態に限定されるものではなく、様々な変形例が含まれる。例えば、前記した実施形態は本発明を分かり易く説明するために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。また、ある実施形態の構成の一部を他の実施形態の構成に置き換えることが可能であり、また、ある実施形態の構成に他の実施形態の構成を加えることも可能である。また、それぞれの実施形態の構成の一部について、他の構成の追加・削除・置換をすることが可能である。 Although the plating apparatus A and the plating method according to the present invention have been described in detail by the embodiment, the present invention is not limited to the above-described embodiment and includes various modifications. For example, the above-described embodiment has been described in detail in order to explain the present invention in an easy-to-understand manner, and is not necessarily limited to the one including all the described configurations. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Further, it is possible to add / delete / replace a part of the configuration of each embodiment with another configuration.

例えば、上述の説明では、めっき槽１における分流比を第一のめっき液取込口２２ａと第二のめっき液取込口２２ｂとの面積比で調整する旨説明したが、これに限定されない。例えば、分流比の調整の変形例の一つとして、第一のめっき液流路１３ａと第二のめっき液流路１３ｂのそれぞれの流路上に邪魔板などの障害物を設けるなどしてもよい。このようにしても、分流比を任意に調整できる。 For example, in the above description, it has been described that the diversion ratio in the plating tank 1 is adjusted by the area ratio between the first plating solution intake port 22a and the second plating solution intake port 22b, but the present invention is not limited to this. For example, as one of the modified examples of adjusting the shunting ratio, an obstacle such as an obstacle plate may be provided on each of the first plating solution flow path 13a and the second plating solution flow path 13b. .. Even in this way, the shunt ratio can be arbitrarily adjusted.

Ａめっき装置
１めっき槽
２めっき液供給路
３めっき液回収路
４循環ポンプ
５被めっき物
５ａ第一のめっき対象面
５ｂ第二のめっき対象面
７めっき液循環供給口
８めっき液循環排出口
９めっき液導入流路
１０分流部
１１保持部
１１ａ第一の保持部
１１ｂ第二の保持部
１１ｃ溝
１２把持部
１２１把持部本体
１２ａ（把持部の）一側面
１２ｂ（把持部の）他側面
１２ｃリッジ部
１３ａ第一のめっき液流路
１３ｂ第二のめっき液流路
１４ａ第一の陽極板
１４ｂ第二の陽極板
１５めっき液排出流路
１６電極
１６ａ第一の電極
１６ｂ第二の電極
１７取付枠
１８開口部
１９ａ第一の斜辺
１９ｂ第二の斜辺
２１分流辺
２２めっき液取込口
２２ａ第一のめっき液取込口
２２ｂ第二のめっき液取込口
２３ａ第一の遮蔽部
２３ｂ第二の遮蔽部
２４ａ第一の直流電源
２４ｂ第二の直流電源 A Plating equipment 1 Plating tank 2 Plating liquid supply path 3 Plating liquid recovery path 4 Circulation pump 5 Plate to be plated 5a First plating target surface 5b Second plating target surface 7 Plating liquid circulation supply port 8 Plating liquid circulation discharge port 9 Plating liquid introduction flow path 10 branch flow part 11 holding part 11a first holding part 11b second holding part 11c groove 12 gripping part 121 gripping part main body 12a (of gripping part) one side surface 12b (of gripping part) other side surface 12c ridge Part 13a First plating solution flow path 13b Second plating solution flow path 14a First anode plate 14b Second anode plate 15 Plating solution discharge flow path 16 Electrode 16a First electrode 16b Second electrode 17 Mounting frame 18 Opening 19a First inclined side 19b Second inclined side 21 Divided flow side 22 Plating liquid intake port 22a First plating solution intake port 22b Second plating solution intake port 23a First shielding part 23b Second Shielding unit 24a First DC power supply 24b Second DC power supply

Claims

第一のめっき対象面と第二のめっき対象面とを有する薄板状の被めっき物の、前記第一のめっき対象面と前記第二のめっき対象面に同時にめっき液を供給することによって前記被めっき物を同時にめっき処理するめっき装置であって、
めっき槽と、
前記めっき槽内において一対の保持部により固定保持されて前記被めっき物を把持する把持部と、
前記めっき槽内において前記把持部の一側面側に形成される第一のめっき液流路および前記一側面の裏面となる他側面側に形成される第二のめっき液流路と、
前記めっき液を前記めっき槽の底部から前記めっき槽内に供給するめっき液循環供給口と、
前記めっき液を前記めっき槽の底部から前記めっき槽外に排出するめっき液循環排出口と、
前記めっき液循環供給口側の保持部である第一の保持部における前記把持部と対向する位置に固定保持される分流部と、を備え、
前記めっき液循環供給口から供給された前記めっき液を、前記分流部により前記第一のめっき液流路と前記第二のめっき液流路に予め設定した分流比で分流して供給し、前記第一のめっき液流路と前記第二のめっき液流路とを通過した前記めっき液を合流して前記めっき液循環排出口から排出して形成するめっき液流により前記被めっき物をめっき処理すること、
を特徴とするめっき装置。 By simultaneously supplying a plating solution to the first plating target surface and the second plating target surface of a thin plate-shaped object to be plated having a first plating target surface and a second plating target surface, the subject is covered. It is a plating device that simultaneously plating plated products.
With the plating tank,
A grip portion that is fixedly held by a pair of holding portions in the plating tank to grip the object to be plated, and a grip portion.
In the plating tank, a first plating solution flow path formed on one side surface side of the grip portion and a second plating solution flow path formed on the other side surface side which is the back surface of the one side surface.
A plating solution circulation supply port for supplying the plating solution from the bottom of the plating tank into the plating tank, and a plating solution circulation supply port.
A plating solution circulation discharge port for discharging the plating solution from the bottom of the plating tank to the outside of the plating tank,
A shunt portion that is fixedly held at a position facing the grip portion in the first holding portion that is a holding portion on the plating solution circulation supply port side is provided.
The plating solution supplied from the plating solution circulation supply port is divided and supplied to the first plating solution flow path and the second plating solution flow path by the diversion section at a preset diversion ratio. The object to be plated is plated by a plating solution flow formed by merging the plating solutions that have passed through the first plating solution flow path and the second plating solution flow path and discharging them from the plating solution circulation discharge port. To do,
A plating device characterized by.

請求項１に記載のめっき装置であって、
前記分流部は、前記被めっき物の表面の第一の回路パターンに基づく第一のめっき条件と、前記被めっき物の裏面の第二の回路パターンに基づく第二のめっき条件と、によって定まる分流比で前記めっき液流を分流して、前記第一のめっき液流路および前記第二のめっき液流路に供給すること、
を特徴とするめっき装置。 The plating apparatus according to claim 1.
The diversion portion is a diversion determined by a first plating condition based on the first circuit pattern on the front surface of the object to be plated and a second plating condition based on the second circuit pattern on the back surface of the object to be plated. Dividing the plating solution flow by a ratio and supplying it to the first plating solution flow path and the second plating solution flow path.
A plating device characterized by.

請求項２に記載のめっき装置であって、
前記第一のめっき液流路の第一のめっき液取込口と、前記第二のめっき液流路の第二のめっき液取込口と、の面積比が前記分流比になるように前記分流部の形状を設定すること、
を特徴とするめっき装置。 The plating apparatus according to claim 2, wherein the plating apparatus is used.
The area ratio between the first plating solution intake port of the first plating solution flow path and the second plating solution intake port of the second plating solution flow path is the diversion ratio. Setting the shape of the diversion part,
A plating device characterized by.

請求項３に記載のめっき装置であって、
前記分流部は、長手方向に垂直な断面の外線が三角形を形成する柱状構造物であり、
前記柱状構造物は、前記三角形の何れかの頂点を含む長手方向の稜線を示す分流辺が前記めっき液流の上流側を向いて配設すると共に、前記分流辺に対向する底面により前記第一の保持部に固定保持され、
前記第一のめっき液流路の第一のめっき液取込口と、前記第二のめっき液流路の第二のめっき液取込口と、の面積比が前記分流比になるように前記頂点を挟む前記三角形の二辺の長さ比率を設定すること、
を特徴とするめっき装置。 The plating apparatus according to claim 3, wherein the plating apparatus is used.
The shunt portion is a columnar structure in which an outer line having a cross section perpendicular to the longitudinal direction forms a triangle.
In the columnar structure, the diversion side showing the ridgeline in the longitudinal direction including any of the vertices of the triangle is arranged so as to face the upstream side of the plating solution flow, and the first surface is formed by the bottom surface facing the diversion side. It is fixedly held in the holding part of
The area ratio between the first plating solution intake port of the first plating solution flow path and the second plating solution intake port of the second plating solution flow path is the diversion ratio. To set the length ratio of the two sides of the triangle that sandwiches the apex,
A plating device characterized by.

請求項３に記載のめっき装置であって、
前記分流部は、長手方向に垂直な断面の外線が四角形を形成する柱状構造物であり、
前記柱状構造物は、前記第一の保持部の前記めっき液循環供給口と相対する側の面に一平面によって固定保持され、
前記第一のめっき液流路の第一のめっき液取込口と、前記第二のめっき液流路の第二のめっき液取込口と、の面積比が前記分流比になるように、前記第一のめっき液流路へのめっき液流の流入量を制限するように前記分流部の一部が前記第一のめっき液流路に張り出して形成する第一の遮蔽部の大きさ、または、前記第二のめっき液流路へのめっき液流の流入量を制限するように前記分流部の一部が前記第二のめっき液流路に張り出して形成する第二の遮蔽部の大きさを設定すること、
を特徴とするめっき装置。 The plating apparatus according to claim 3, wherein the plating apparatus is used.
The shunt portion is a columnar structure in which an outer line having a cross section perpendicular to the longitudinal direction forms a quadrangle.
The columnar structure is fixedly held by a single plane on the surface of the first holding portion on the side facing the plating solution circulation supply port.
The area ratio between the first plating solution intake port of the first plating solution flow path and the second plating solution intake port of the second plating solution flow path is set to the diversion ratio. The size of the first shielding portion formed by a part of the diversion portion overhanging the first plating liquid flow path so as to limit the inflow amount of the plating liquid flow into the first plating liquid flow path. Alternatively, the size of the second shielding portion formed by a part of the diversion portion projecting to the second plating solution flow path so as to limit the inflow amount of the plating solution flow into the second plating solution flow path. To set the
A plating device characterized by.

請求項１に記載のめっき装置であって、
前記第一のめっき液流路は、前記一側面と所定の間隔をあけて相対する第一の陽極板を備え、
前記第二のめっき液流路は、前記他側面と所定の間隔をあけて相対する第二の陽極板を備え、
前記第一の陽極板と前記把持部に把持された被めっき物との間に第一の直流電源を接続し、
前記第二の陽極板と前記把持部に把持された被めっき物との間に第二の直流電源を接続し、
前記第一の直流電源により、前記被めっき物の第一のめっき対象面の第一の回路パターンに基づく第一のめっき条件に基づいて設定する電流を付与し、
前記第二の直流電源により、前記被めっき物の第二のめっき対象面の第二の回路パターンに基づく第二のめっき条件に基づいて設定する電流を付与すること、
を特徴とするめっき装置。 The plating apparatus according to claim 1.
The first plating solution flow path includes a first anode plate facing the one side surface at a predetermined distance.
The second plating solution flow path includes a second anode plate facing the other side surface at a predetermined distance.
A first DC power supply is connected between the first anode plate and the object to be plated gripped by the grip portion.
A second DC power supply is connected between the second anode plate and the object to be plated gripped by the grip portion.
The first DC power supply applies a current set based on the first plating condition based on the first circuit pattern of the first plating target surface of the object to be plated.
Applying a current set based on the second plating condition based on the second circuit pattern of the second plating target surface of the object to be plated by the second DC power supply.
A plating device characterized by.

請求項１に記載のめっき装置であって、
循環ポンプと、めっき液供給路と、めっき液回収路と、を備え、
前記循環ポンプの吐出側と前記めっき液循環供給口とを前記めっき液供給路で接続し、前記循環ポンプの吸込側と前記めっき液循環排出口とを前記めっき液回収路で接続して前記めっき槽と前記循環ポンプとの間で循環路を形成し、前記循環ポンプにより所定の吐出圧にて前記めっき液を循環すること、
を特徴とするめっき装置。 The plating apparatus according to claim 1.
It is equipped with a circulation pump, a plating solution supply path, and a plating solution recovery path.
The discharge side of the circulation pump and the plating solution circulation supply port are connected by the plating solution supply path, and the suction side of the circulation pump and the plating solution circulation discharge port are connected by the plating solution recovery path to perform the plating. A circulation path is formed between the tank and the circulation pump, and the plating solution is circulated by the circulation pump at a predetermined discharge pressure.
A plating device characterized by.

第一のめっき対象面と第二のめっき対象面とを有する薄板状の被めっき物の、前記第一のめっき対象面と前記第二のめっき対象面に同時にめっき液を供給することによって前記被めっき物を同時にめっき処理するめっき装置であって、めっき槽と、前記めっき槽内において一対の保持部により固定保持されて前記被めっき物を把持する把持部と、前記めっき槽内において前記把持部の一側面側に形成される第一のめっき液流路および前記一側面の裏面となる他側面側に形成される第二のめっき液流路と、前記めっき液を前記めっき槽の底部から前記めっき槽内に供給するめっき液循環供給口と、前記めっき液を前記めっき槽の底部から前記めっき槽外に排出するめっき液循環排出口と、前記めっき液循環供給口側の保持部である第一の保持部における前記把持部と対向する位置に固定保持される分流部と、を備えるめっき装置を用いるめっき方法であり、
前記めっき液循環供給口から供給された前記めっき液を、前記分流部により前記第一のめっき液流路と前記第二のめっき液流路に予め設定した分流比で分流して供給し、前記第一のめっき液流路と前記第二のめっき液流路とを通過した前記めっき液を合流して前記めっき液循環排出口から排出して形成するめっき液流により前記被めっき物をめっき処理すること、
を特徴とするめっき方法。 By simultaneously supplying a plating solution to the first plating target surface and the second plating target surface of a thin plate-shaped object to be plated having a first plating target surface and a second plating target surface, the subject is covered. A plating apparatus for simultaneously plating a plated object, the plating tank, a grip portion fixedly held by a pair of holding portions in the plating tank to grip the object to be plated, and the grip portion in the plating tank. A first plating solution flow path formed on one side surface side, a second plating solution flow path formed on the other side surface side which is the back surface of the one side surface, and the plating solution from the bottom of the plating tank. A first holding portion on the plating solution circulation supply port side, a plating solution circulation supply port for supplying the plating solution into the plating tank, a plating solution circulation discharge port for discharging the plating solution from the bottom of the plating tank to the outside of the plating tank, and a holding portion on the plating solution circulation supply port side. It is a plating method using a plating apparatus including a flow dividing portion that is fixedly held at a position facing the grip portion in one holding portion.
The plating solution supplied from the plating solution circulation supply port is divided and supplied to the first plating solution flow path and the second plating solution flow path by the diversion section at a preset diversion ratio. The object to be plated is plated by a plating solution flow formed by merging the plating solutions that have passed through the first plating solution flow path and the second plating solution flow path and discharging them from the plating solution circulation discharge port. To do,
A plating method characterized by.