JP7090521B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 26
- 230000005684 electric field Effects 0.000 description 14
- 239000004020 conductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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Description
特許文献1は、この点に関し何らの開示も示唆もしていない。
図のプラズマ処理装置1は、被処理体としてのウェハWに対して所定のプラズマ処理を行うものである。プラズマ処理装置1では、プラズマ処理に用いられるプラズマはVHF波により生成される。また、プラズマ処理装置1が行うプラズマ処理は、例えば成膜処理やエッチング処理、ドーピング処理である。
載置台11は、処理容器10の底部中央に絶縁部材12aを介して立設された支持部材12により支持されている。図示はしていないが、載置台11には、温度制御機構、ウェハWの裏面に熱伝達用のガスを供給するガス流路、搬送アーム(図示せず)との間でウェハWを受け渡すために昇降する昇降ピン等が設けられている。さらに、載置台11には、ウェハWを静電吸着するための静電チャックが設けられていてもよい。
VHF発生源18からの電磁波は、アンテナ導体16の外周面と筒状壁10cの内周面との間、アンテナ導体16の外周面と貫通孔10bを形成する面との間、天壁10aの内側面とシャワーヘッド電極13の上面との間を順に伝播し、誘電体窓14に到達する。言い換えると、プラズマ処理装置1内にVHF波を導入する導波部は、アンテナ導体16の外周面、筒状壁10cの内周面、貫通孔10bを形成する面、天壁10aの内側面及びシャワーヘッド電極13の上面等から成る。上述の導波部は、電磁波が伝播し易いように石英等の誘電体で充填されていてもよい。
図示するように、誘電体窓14は、円環状の部材である。この誘電体窓14は、平面視において、載置台11上のウェハWと重ならないように当該ウェハWより外側に位置するように設けられている。したがって、ウェハWの外径が300mmである場合、誘電体窓14の内径は例えば300mm以上450mm以下である。なお、この場合、誘電体窓14の径方向の幅L1は例えば40mm以上60mm以下であり、誘電体窓14の外径は例えば350mm以上500mm以下である。
誘電体窓14は、誘電率が高く成形が容易な材料、例えば、アルミナや石英、窒化アルミにより形成される。
この凸部14aを有する誘電体窓14を透過したVHF波による電界によって生成されたプラズマでは、後述するように周方向偏りが抑制されている。
プラズマ処理が完了すると、プラズマ処理用ガスの供給と、高周波電源20からの高周波電力の供給と、VHF発生源18からのVHF波の供給とが停止される。その後、ウェハWが処理容器10から搬出されて、プラズマ処理に係る一連の処理が終了する。
本実施形態では、誘電体窓14に凸部14aが設けられている。図3は、本実施形態と異なり、誘電体窓14に凸部14aが形成されておらず下面が平坦である場合に、実際にプラズマ処理により成膜を行ったときの膜厚分布を示す図である。図3では、黒色が濃いほど当該部分の膜厚が小さいことを意味する。図4は、本実施形態と異なり、誘電体窓14に凸部14aが形成されておらず下面が平坦である場合に、プラズマ生成条件を変えて、実際に窒素雰囲気下でプラズマ生成を行ったときの処理容器10内の様子を模式的に示す図である。図4では、白色に近いほどプラズマの強度が高いことを意味する。なお、プラズマ生成時のVHF波の出力と処理容器10内の圧力は、図4(A)では100W、500mTorr、図4(B)は200W、500mTorr、図4(C)では500W、500mTorrであった。また、図4(D)では100W、1000mTorr、図4(E)は200W、1000mTorr、図4(F)では500W、1000mTorrであった。
また、以上の例では、平面視における凸部14aの形状は矩形であった。これに限らず、平面視における凸部14aの形状は楕円形であってもよい。この場合、凸部14aの周方向の幅は、例えば、平面視において凸部14aを形成する楕円形の長軸方向の長さを意味する。つまり、この場合、平面視において凸部14aを形成する楕円形の長軸方向の長さをVHF波の誘電体内波長λの1/8~3/8とすることにより、周方向において均一なプラズマ処理結果を得ることができる。
(1)被処理体をプラズマ処理するプラズマ処理装置であって、
前記被処理体が載置される載置部と、
当該プラズマ処理装置内にプラズマ生成用のVHF帯の電磁波を導入する導波部と、
前記導波部により導入された前記電磁波を、前記載置部の前記被処理体載置側に形成されるプラズマ処理空間に透過させる誘電体窓と、を有し、
前記誘電体窓は、前記載置部の前記プラズマ処理空間側と対向するように設けられた環状の部材であり、前記載置部の方向に突出する複数の凸部が周方向に沿って等間隔で並ぶように前記載置部側に形成され、
前記凸部の周方向の幅は、前記誘電体窓内における前記電磁波の波長の1/8~3/8である、プラズマ処理装置。
前記(1)によれば、環状の誘電体窓に、周方向の幅がVHF帯の電磁波の波長の1/8~3/8である凸部が複数設けられている。そのため、上記電磁波の強度やプラズマ処理時の圧力によらず、プラズマ生成用の電磁波が凸部内において共振し、当該凸部に電界が集中する。電界が集中する部分では、電磁波のプラズマへの吸収効率が高く、プラズマからの反射波が抑制される。このような凸部が周方向に沿って等間隔で並ぶように設けられているため、プラズマ処理におけるプラズマ分布を均一にすることができる。
前記プラズマ処理装置は、
前記被処理体が載置される載置部と、
前記載置部の前記被処理体載置側に形成されるプラズマ処理空間に透過させる誘電体窓と、を有し、
前記誘電体窓は、前記載置部の前記プラズマ処理空間側と対向するように設けられた環状の部材であり、前記載置部の方向に突出する複数の凸部が周方向に沿って並ぶように前記載置部側に形成され、
前記凸部の周方向の幅は、前記誘電体窓内におけるプラズマ生成用のVHF帯の電磁波の波長の1/8~3/8であり、
当該プラズマ処理方法は、
前記プラズマ処理装置内に前記電磁波を導入する工程と、
導入された前記電磁波を、前記誘電体窓を介して前記プラズマ処理空間へ供給し、プラズマを生成する工程と、を有するプラズマ処理方法。
10 処理容器
11 載置台
14 誘電体窓
14a 凸部
L2 周方向の幅
S プラズマ処理空間
Claims (5)
- 被処理体をプラズマ処理するプラズマ処理装置であって、
前記被処理体が載置される載置部と、
当該プラズマ処理装置内にプラズマ生成用のVHF帯の電磁波を導入する導波部と、
前記導波部により導入された前記電磁波を、前記載置部の前記被処理体載置側に形成されるプラズマ処理空間に透過させる誘電体窓と、を有し、
前記誘電体窓は、前記載置部の前記プラズマ処理空間側と対向するように設けられた環状の部材であり、前記載置部の方向に突出する複数の凸部が周方向に沿って等間隔で並ぶように前記載置部側に形成され、
前記凸部の周方向の幅は、前記誘電体窓内における前記電磁波の波長の1/8~3/8である、プラズマ処理装置。 - 互いに隣接する前記凸部間の距離は、前記電磁波の波長の1%以上である、請求項1に記載のプラズマ処理装置。
- 前記誘電体窓は、アルミナ、石英または窒化アルミにより形成されている、請求項1または2に記載のプラズマ処理装置。
- 前記誘電体窓は、円環状の部材であり、外径が350mm~500mm、内径が300~450mmである、請求項1~3のいずれか1項に記載のプラズマ処理装置。
- プラズマ処理装置を用いて被処理体をプラズマ処理するプラズマ処理方法であって、
前記プラズマ処理装置は、
前記被処理体が載置される載置部と、
前記載置部の前記被処理体載置側に形成されるプラズマ処理空間に透過させる誘電体窓と、を有し、
前記誘電体窓は、前記載置部の前記プラズマ処理空間側と対向するように設けられた環状の部材であり、前記載置部の方向に突出する複数の凸部が周方向に沿って並ぶように前記載置部側に形成され、
前記凸部の周方向の幅は、前記誘電体窓内におけるプラズマ生成用のVHF帯の電磁波の波長の1/8~3/8であり、
当該プラズマ処理方法は、
前記プラズマ処理装置内に前記電磁波を導入する工程と、
導入された前記電磁波を、前記誘電体窓を介して前記プラズマ処理空間へ供給し、プラズマを生成する工程と、を有するプラズマ処理方法。
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