JP7072743B2 - Heat dissipation structure, high frequency circuit and antenna device - Google Patents

Heat dissipation structure, high frequency circuit and antenna device Download PDF

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JP7072743B2
JP7072743B2 JP2022514909A JP2022514909A JP7072743B2 JP 7072743 B2 JP7072743 B2 JP 7072743B2 JP 2022514909 A JP2022514909 A JP 2022514909A JP 2022514909 A JP2022514909 A JP 2022514909A JP 7072743 B2 JP7072743 B2 JP 7072743B2
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signal conductor
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裕之 青山
勇太 杉山
秀憲 湯川
徹 高橋
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Mitsubishi Electric Corp
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    • H01—ELECTRIC ELEMENTS
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Description

本開示は、放熱構造、高周波回路およびアンテナ装置に関する。 The present disclosure relates to a heat dissipation structure, a high frequency circuit and an antenna device.

高周波帯またはマイクロ波帯の信号を扱うレーダ装置においては、遠距離まで送信信号を伝搬させるために大電力の送信電力が必要であり、出力電力を増大させる電力増幅器が用いられる。一般に、電力増幅器においては、出力電力を大きくするに従って電力増幅器内部における消費電力が大きくなるので、電力増幅器からの発熱量は、大きくなる。電力増幅器に生じた熱は、電力増幅器が実装された基板あるいは電力増幅器に取り付けられた放熱フィンを通じて放熱される。しかしながら、放熱しきれなかった熱の一部は、電力増幅器に接続された高周波伝送線路を通じて高周波回路に伝熱する。高周波回路に伝熱した熱量が大きい場合、高周波回路の誤作動を誘引するだけではなく、回路の寿命を短くする可能性がある。 In a radar device that handles signals in the high frequency band or microwave band, a large amount of transmission power is required to propagate the transmission signal over a long distance, and a power amplifier that increases the output power is used. Generally, in a power amplifier, the power consumption inside the power amplifier increases as the output power increases, so that the amount of heat generated from the power amplifier increases. The heat generated in the power amplifier is dissipated through the substrate on which the power amplifier is mounted or the heat dissipation fins attached to the power amplifier. However, a part of the heat that cannot be dissipated is transferred to the high frequency circuit through the high frequency transmission line connected to the power amplifier. When the amount of heat transferred to the high-frequency circuit is large, it not only induces malfunction of the high-frequency circuit but also may shorten the life of the circuit.

例えば、特許文献１には、動作周波数の波長の約１／４の長さを有しかつ先端部が放熱性のよい金属に短絡された伝送線路、いわゆる先端短絡１／４波長スタブを備え、電力増幅器に生じた熱を、先端短絡１／４波長スタブを介して放熱させる放熱構造が記載されている。先端短絡１／４波長スタブは、中心周波数において開放とみなせるので、高周波回路の動作には悪影響を与えない。高周波回路へ伝熱される熱量を小さくするためには、伝送線路から先端短絡１／４波長スタブをみた熱抵抗が小さいことが必要である。一般に、物体の熱抵抗は、物体の長さに比例し、その断面積に反比例する。先端短絡１／４波長スタブの長さは、動作周波数によって決定されるため、放熱性を改善するためには、如何に断面積を大きくするかが重要となる。 For example, Patent Document 1 includes a transmission line having a length of about 1/4 of the wavelength of the operating frequency and whose tip is short-circuited to a metal having good heat dissipation, that is, a so-called tip short-circuit 1/4 wavelength stub. A heat dissipation structure is described in which heat generated in a power amplifier is dissipated through a 1/4 wavelength stub short-circuited at the tip. Since the tip short circuit 1/4 wavelength stub can be regarded as open at the center frequency, it does not adversely affect the operation of the high frequency circuit. In order to reduce the amount of heat transferred to the high frequency circuit, it is necessary that the thermal resistance seen from the transmission line at the tip short circuit 1/4 wavelength stub is small. In general, the thermal resistance of an object is proportional to the length of the object and inversely proportional to its cross-sectional area. Since the length of the tip short-circuit 1/4 wavelength stub is determined by the operating frequency, it is important how to increase the cross-sectional area in order to improve the heat dissipation.

特開２０１１－１０９２０１号公報Japanese Unexamined Patent Publication No. 2011-109201

先端短絡１／４波長スタブの断面積を大きくすると、先端短絡１／４波長スタブを構成する伝送線路の特性インピーダンスが低くなり、高周波帯において開放とみなせる周波数帯が狭帯域となる。これは、高周波回路において動作可能な周波数帯域幅が減少することを意味する。このように、従来の放熱構造は、先端短絡１／４波長スタブを用いた場合、放熱性と動作帯域幅とがトレードオフの関係にあり、一方を改善すると、もう一方が劣化するという課題があった。 When the cross-sectional area of the tip short-circuit 1/4 wavelength stub is increased, the characteristic impedance of the transmission line constituting the tip short-circuit 1/4 wavelength stub becomes low, and the frequency band that can be regarded as open in the high frequency band becomes a narrow band. This means that the frequency bandwidth that can be operated in the high frequency circuit is reduced. As described above, in the conventional heat dissipation structure, when the tip short-circuit 1/4 wavelength stub is used, there is a trade-off relationship between the heat dissipation property and the operating bandwidth, and if one is improved, the other is deteriorated. there were.

本開示は上記課題を解決するものであり、動作帯域幅を狭帯域化することなく、放熱性を改善することができる、放熱構造、高周波回路およびアンテナ装置を得ることを目的とする。 The present disclosure has been made to solve the above problems, and an object of the present invention is to obtain a heat dissipation structure, a high frequency circuit, and an antenna device capable of improving heat dissipation without narrowing the operating bandwidth.

本開示に係る放熱構造は、第１の面と、第１の面とは反対側の第２の面を有し、第２の面に地導体が設けられた誘電体基板と、誘電体基板の第１の面に設けられ、高周波信号の入力端子に一方の端部が接続された第１の信号導体と、誘電体基板の第１の面に設けられ、高周波信号の出力端子に一方の端部が接続され、第１の信号導体における入力端子とは反対側の端部に他方の端部が接続された第２の信号導体と、誘電体基板の第１の面に設けられ、動作周波数の波長の４分の１の長さを有した第３の信号導体と、誘電体基板の内層に設けられて、動作周波数の波長の４分の１の長さを有した第４の信号導体と、第４の信号導体の一方の端部を、第１の信号導体と第２の信号導体との接続点に接続する第１の接続導体と、第４の信号導体の他方の端部を、第３の信号導体および地導体に接続する第２の接続導体とを備え、第３の信号導体は、第１の信号導体と第２の信号導体との接続点に接続され、第４の信号導体は、平面的にみて、第３の信号導体と少なくとも一部が重なるように、第３の信号導体を含む平面と平行に配置されている。 The heat dissipation structure according to the present disclosure has a first surface, a second surface opposite to the first surface, and a dielectric substrate provided with a ground conductor on the second surface, and a dielectric substrate. A first signal conductor provided on the first surface of the above, one end of which is connected to the input terminal of the high frequency signal, and one of the output terminals of the high frequency signal provided on the first surface of the dielectric substrate. A second signal conductor to which the ends are connected and the other end is connected to the end opposite to the input terminal in the first signal conductor, and a second signal conductor provided on the first surface of the dielectric substrate for operation. A third signal conductor having a length of one-fourth of the frequency wavelength and a fourth signal provided in the inner layer of the dielectric substrate and having a length of one-fourth of the operating frequency wavelength. A first connecting conductor connecting the conductor and one end of the fourth signal conductor to the connection point between the first signal conductor and the second signal conductor, and the other end of the fourth signal conductor. The third signal conductor is provided with a third signal conductor and a second connecting conductor connecting to the ground conductor, and the third signal conductor is connected to the connection point between the first signal conductor and the second signal conductor, and the fourth signal conductor is connected to the second signal conductor. The signal conductor of No. 1 is arranged in parallel with the plane including the third signal conductor so as to overlap at least a part of the third signal conductor when viewed in a plane.

本開示によれば、高周波信号の入力端子に一方の端部が接続された第１の信号導体と、高周波信号の出力端子に一方の端部が接続され、第１の信号導体における、入力端子とは反対側の端部に他方の端部が接続された第２の信号導体と、動作周波数の波長の４分の１の長さを有し、第１の信号導体と第２の信号導体との接続点に端部が接続された第３の信号導体と、誘電体基板の内層に設けられ、動作周波数の波長の４分の１の長さを有した第４の信号導体と、第４の信号導体の一方の端部を、第１の信号導体と第２の信号導体との接続点に接続する第１の接続導体と、第４の信号導体の他方の端部を、第３の信号導体および地導体に接続する第２の接続導体とを備え、第３の信号導体は、第１の信号導体と第２の信号導体との接続点に接続され、第４の信号導体は、平面的にみて、第３の信号導体と少なくとも一部が重なるように、第３の信号導体を含む平面と平行に配置されている。第３の信号導体と第４の信号導体が並列に接続され、平面的にみて、第３の信号導体と第４の信号導体が重なるように第３の信号導体を含む平面と平行に配置されている。これにより、本開示に係る放熱構造は、動作帯域幅を狭帯域化することなく、第１の信号導体と第２の信号導体との接続点から第３の信号導体および第４の信号導体をみた熱抵抗を低減でき、放熱性を改善することができる。 According to the present disclosure, the first signal conductor having one end connected to the input terminal of the high frequency signal and the input terminal of the first signal conductor having one end connected to the output terminal of the high frequency signal. A second signal conductor having the other end connected to the opposite end, and a first signal conductor and a second signal conductor having a length of one-fourth of the wavelength of the operating frequency. A third signal conductor whose end is connected to the connection point with, a fourth signal conductor provided in the inner layer of the dielectric substrate and having a length of one-fourth of the wavelength of the operating frequency, and a third signal conductor. A first connecting conductor connecting one end of the signal conductor 4 to a connection point between the first signal conductor and the second signal conductor, and a third end of the fourth signal conductor. The third signal conductor is connected to the connection point between the first signal conductor and the second signal conductor, and the fourth signal conductor is The third signal conductor is arranged in parallel with the plane including the third signal conductor so that at least a part of the third signal conductor overlaps with the third signal conductor. The third signal conductor and the fourth signal conductor are connected in parallel, and are arranged parallel to the plane including the third signal conductor so that the third signal conductor and the fourth signal conductor overlap each other when viewed in a plane. ing. As a result, the heat dissipation structure according to the present disclosure can connect the third signal conductor and the fourth signal conductor from the connection point between the first signal conductor and the second signal conductor without narrowing the operating bandwidth. The seen thermal resistance can be reduced and the heat dissipation can be improved.

図１Ａは、実施の形態１に係る放熱構造を示す斜視図であり、図１Ｂは、実施の形態１に係る放熱構造を、図１ＡのＡ－Ａ’線で切断した断面を示す断面図であり、図１Ｃは、実施の形態１に係る放熱構造を、図１ＡのＢ－Ｂ’線で切断した断面を示す断面図である。1A is a perspective view showing a heat dissipation structure according to the first embodiment, and FIG. 1B is a cross-sectional view showing a cross section of the heat dissipation structure according to the first embodiment cut along the line AA'of FIG. 1A. 1C is a cross-sectional view showing a cross section of the heat dissipation structure according to the first embodiment cut along the line BB'of FIG. 1A. 実施の形態１に係る放熱構造の等価回路を示す回路図である。It is a circuit diagram which shows the equivalent circuit of the heat dissipation structure which concerns on Embodiment 1. FIG. 図３Ａは、従来の放熱構造を示す斜視図であり、図３Ｂは、従来の放熱構造を、図３ＡのＡ－Ａ’線で切断した断面を示す断面図であり、図３Ｃは、従来の放熱構造を、図３ＡのＢ－Ｂ’線で切断した断面を示す断面図である。3A is a perspective view showing a conventional heat dissipation structure, FIG. 3B is a cross-sectional view showing a cross section of the conventional heat dissipation structure cut along the line AA'of FIG. 3A, and FIG. 3C is a conventional cross section. FIG. 3 is a cross-sectional view showing a cross section of the heat dissipation structure cut along the line BB'of FIG. 3A. 従来の放熱構造の等価回路を示す回路図である。It is a circuit diagram which shows the equivalent circuit of the conventional heat dissipation structure. 従来の放熱構造の等価回路における反射振幅の計算結果の例を示すグラフである。It is a graph which shows the example of the calculation result of the reflection amplitude in the equivalent circuit of the conventional heat dissipation structure. 実施の形態１に係る放熱構造の等価回路における反射振幅の計算結果の例を示すグラフである。It is a graph which shows the example of the calculation result of the reflection amplitude in the equivalent circuit of the heat dissipation structure which concerns on Embodiment 1. FIG. 実施の形態１に係る放熱構造と従来の放熱構造における反射振幅の電磁界解析結果を示すグラフである。It is a graph which shows the electromagnetic field analysis result of the reflection amplitude in the heat radiation structure and the conventional heat radiation structure which concerns on Embodiment 1. FIG. 図８Ａは、実施の形態１に係る放熱構造を、図１ＡのＡ－Ａ’線で切断した断面および寸法を示す断面図であり、図８Ｂは、従来の放熱構造を、図３ＡのＡ－Ａ’線で切断した断面および寸法を示す断面図である。FIG. 8A is a cross-sectional view showing a cross section and dimensions of the heat dissipation structure according to the first embodiment cut along the line AA'of FIG. 1A, and FIG. 8B shows a conventional heat dissipation structure taken along the line AA of FIG. 3A. It is sectional drawing which shows the cross section and the dimension cut along the A'line. 図９Ａは、実施の形態１に係る放熱構造の変形例を示す斜視図であり、図９Ｂは、実施の形態１に係る放熱構造の変形例を、図９ＡのＡ－Ａ’線で切断した断面を示す断面図であり、図９Ｃは、実施の形態１に係る放熱構造の変形例を、図９ＡのＢ－Ｂ’線で切断した断面を示す断面図である。FIG. 9A is a perspective view showing a modified example of the heat radiating structure according to the first embodiment, and FIG. 9B shows a modified example of the heat radiating structure according to the first embodiment cut along the line AA'of FIG. 9A. 9C is a cross-sectional view showing a cross section, and FIG. 9C is a cross-sectional view showing a modified example of the heat dissipation structure according to the first embodiment cut along the line BB'of FIG. 9A. 図１０Ａは、実施の形態２に係る放熱構造を示す斜視図であり、図１０Ｂは、実施の形態２に係る放熱構造を、図１０ＡのＡ－Ａ’線で切断した断面を示す断面図であり、図１０Ｃは、実施の形態２に係る放熱構造を、図１０ＡのＢ－Ｂ’線で切断した断面を示す断面図である。10A is a perspective view showing the heat dissipation structure according to the second embodiment, and FIG. 10B is a cross-sectional view showing a cross section of the heat dissipation structure according to the second embodiment cut along the line AA'of FIG. 10A. 10C is a cross-sectional view showing a cross section of the heat dissipation structure according to the second embodiment cut along the line BB'of FIG. 10A. 図１１Ａは、実施の形態３に係る放熱構造を示す斜視図であり、図１１Ｂは、実施の形態３に係る放熱構造を、図１１ＡのＡ－Ａ’線で切断した断面を示す断面図であり、図１１Ｃは、実施の形態３に係る放熱構造を、図１１ＡのＢ－Ｂ’線で切断した断面を示す断面図である。11A is a perspective view showing the heat dissipation structure according to the third embodiment, and FIG. 11B is a cross-sectional view showing a cross section of the heat dissipation structure according to the third embodiment cut along the line AA'of FIG. 11A. 11C is a cross-sectional view showing a cross section of the heat dissipation structure according to the third embodiment cut along the line BB'of FIG. 11A. 実施の形態３に係る放熱構造の等価回路を示す回路図である。It is a circuit diagram which shows the equivalent circuit of the heat dissipation structure which concerns on Embodiment 3. 実施の形態１に係る放熱構造と実施の形態３に係る放熱構造とにおける反射振幅の電磁界解析結果を示すグラフである。It is a graph which shows the electromagnetic field analysis result of the reflection amplitude in the heat radiation structure which concerns on Embodiment 1 and the heat radiation structure which concerns on Embodiment 3. 実施の形態１～３に係る放熱構造の少なくとも一つを含む高周波回路の一例を示すブロック図である。It is a block diagram which shows an example of the high frequency circuit which includes at least one of the heat dissipation structures which concerns on Embodiments 1 to 3. 実施の形態１～３に係る放熱構造の少なくとも一つを含むアンテナ装置の一例を示すブロック図である。It is a block diagram which shows an example of the antenna apparatus which includes at least one of the heat dissipation structures which concerns on Embodiments 1 to 3.

実施の形態１．
図１Ａは、実施の形態１に係る放熱構造１を示す斜視図である。図１Ｂは、放熱構造１を、図１ＡのＡ－Ａ’線で切断した断面を示す断面図である。図１Ｃは、放熱構造１を、図１ＡのＢ－Ｂ’線で切断した断面を示す断面図である。図１Ａ、図１Ｂおよび図１Ｃにおいて、放熱構造１は、例えば、高周波信号が入出力される高周波回路であり、高周波信号が入力される入力端子２ａ、高周波信号が出力される出力端子２ｂ、信号導体３ａ、信号導体３ｂ、信号導体４ａ、信号導体４ｂ、誘電体基板５、地導体６、接続導体７ａおよび接続導体７ｂを備える。Embodiment 1.
FIG. 1A is a perspective view showing a heat dissipation structure 1 according to the first embodiment. FIG. 1B is a cross-sectional view showing a cross section of the heat dissipation structure 1 cut along the line AA'of FIG. 1A. FIG. 1C is a cross-sectional view showing a cross section of the heat dissipation structure 1 cut along the line BB'of FIG. 1A. In FIGS. 1A, 1B and 1C, the heat dissipation structure 1 is, for example, a high frequency circuit into which a high frequency signal is input / output, an input terminal 2a into which the high frequency signal is input, an output terminal 2b in which the high frequency signal is output, and a signal. It includes a conductor 3a, a signal conductor 3b, a signal conductor 4a, a signal conductor 4b, a dielectric substrate 5, a ground conductor 6, a connecting conductor 7a, and a connecting conductor 7b.

信号導体３ａは、誘電体基板５の第１の面（＋ｚ方向の面）に設けられ、一方の端部が入力端子２ａに接続され、他方の端部が信号導体３ｂの端部に接続された第１の信号導体である。信号導体３ｂは、誘電体基板５の第１の面に設けられ、一方の端部が出力端子２ｂに接続され、他方の端部が信号導体３ａにおける入力端子２ａとは反対側の端部に接続された第２の信号導体である。信号導体４ａは、誘電体基板５の第１の面に設けられ、動作周波数の波長の４分の１の長さを有し、一方の端部が信号導体３ａと信号導体３ｂとの接続点に接続された第３の信号導体である。 The signal conductor 3a is provided on the first surface (plane in the + z direction) of the dielectric substrate 5, one end is connected to the input terminal 2a, and the other end is connected to the end of the signal conductor 3b. It is the first signal conductor. The signal conductor 3b is provided on the first surface of the dielectric substrate 5, one end is connected to the output terminal 2b, and the other end is at the end of the signal conductor 3a opposite to the input terminal 2a. It is a connected second signal conductor. The signal conductor 4a is provided on the first surface of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and one end thereof is a connection point between the signal conductor 3a and the signal conductor 3b. It is a third signal conductor connected to.

信号導体４ｂは、図１Ｂおよび図１Ｃに示すように、誘電体基板５の内層に設けられ、動作周波数の波長の４分の１の長さを有し、平面的にみて信号導体４ａと少なくとも一部が重なるように、信号導体４ａを含む平面と平行に配置された、第４の信号導体である。誘電体基板５における第１の面とは反対側の第２の面（－ｚ方向の面）には、導体のベタパターンである地導体６が形成されている。 As shown in FIGS. 1B and 1C, the signal conductor 4b is provided in the inner layer of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and is at least equal to the signal conductor 4a in terms of plan. It is a fourth signal conductor arranged parallel to the plane including the signal conductor 4a so as to partially overlap. A ground conductor 6, which is a solid pattern of a conductor, is formed on a second surface (a surface in the −z direction) opposite to the first surface of the dielectric substrate 5.

接続導体７ａおよび接続導体７ｂは、誘電体基板５の内層に設けられる。接続導体７ａは、信号導体４ｂの一方の端部を、信号導体３ａと信号導体３ｂとの接続点に接続する第１の接続導体である。接続導体７ｂは、信号導体４ｂの他方の端部を信号導体４ａおよび地導体６に接続する第２の接続導体である。 The connecting conductor 7a and the connecting conductor 7b are provided in the inner layer of the dielectric substrate 5. The connecting conductor 7a is a first connecting conductor that connects one end of the signal conductor 4b to the connection point between the signal conductor 3a and the signal conductor 3b. The connecting conductor 7b is a second connecting conductor that connects the other end of the signal conductor 4b to the signal conductor 4a and the ground conductor 6.

結合導体８は、動作周波数の波長の４分の１の長さを有した信号導体４ａおよび信号導体４ｂが電気的に結合したものである。信号導体４ａと信号導体４ｂとの間の厚み方向（ｚ方向）の間隔は、例えば、誘電体基板５の厚さの１０分の１以下である。信号導体３ａ、信号導体３ｂ、信号導体４ａおよび信号導体４ｂは、地導体６と合わせて高周波信号を伝送する伝送線路として機能する。 The coupling conductor 8 is an electrically coupled signal conductor 4a and a signal conductor 4b having a length of one-fourth of the wavelength of the operating frequency. The interval in the thickness direction (z direction) between the signal conductor 4a and the signal conductor 4b is, for example, one tenth or less of the thickness of the dielectric substrate 5. The signal conductor 3a, the signal conductor 3b, the signal conductor 4a, and the signal conductor 4b function as a transmission line for transmitting a high frequency signal together with the ground conductor 6.

接続導体７ａおよび接続導体７ｂの物理的な大きさが動作周波数の波長と比較して十分に小さい場合、高周波帯では、接続導体７ａおよび接続導体７ｂの影響を無視することができる。接続導体７ａおよび接続導体７ｂの長さは、動作周波数の波長の１０分の１以下であることが望ましい。 If the physical size of the connecting conductor 7a and the connecting conductor 7b is sufficiently small compared to the wavelength of the operating frequency, the influence of the connecting conductor 7a and the connecting conductor 7b can be ignored in the high frequency band. The length of the connecting conductor 7a and the connecting conductor 7b is preferably one tenth or less of the wavelength of the operating frequency.

図２は、放熱構造１の等価回路を示す回路図であり、放熱構造１の電気的な動作を表す等価回路である。図２に示す等価回路は、高周波信号が入力される入力端子２ａ、高周波信号が出力される出力端子２ｂ、給電線路９ａ、給電線路９ｂ、伝送線路１０ａおよび伝送線路１０ｂによって構成される。伝送線路１０ａおよび伝送線路１０ｂは、動作周波数の波長の４分の１の長さを有している。 FIG. 2 is a circuit diagram showing an equivalent circuit of the heat dissipation structure 1, and is an equivalent circuit showing the electrical operation of the heat dissipation structure 1. The equivalent circuit shown in FIG. 2 is composed of an input terminal 2a for inputting a high frequency signal, an output terminal 2b for outputting a high frequency signal, a feeding line 9a, a feeding line 9b, a transmission line 10a, and a transmission line 10b. The transmission line 10a and the transmission line 10b have a length of one-fourth of the wavelength of the operating frequency.

給電線路９ａは、一方の端部が入力端子２ａに接続され、他方の端部が給電線路９ｂの端部に接続されている。給電線路９ｂは、一方の端部が出力端子２ｂに接続され、他方の端部が、給電線路９ａにおける入力端子２ａとは反対側の端部に接続されている。結合線路１１は、伝送線路１０ａと伝送線路１０ｂが電気的に結合されて構成される。 One end of the feeding line 9a is connected to the input terminal 2a, and the other end is connected to the end of the feeding line 9b. One end of the feeding line 9b is connected to the output terminal 2b, and the other end is connected to the end of the feeding line 9a opposite to the input terminal 2a. The coupling line 11 is configured by electrically coupling the transmission line 10a and the transmission line 10b.

伝送線路１０ａおよび伝送線路１０ｂの端部のうち、同じ側にある端部は、互いに接続される。伝送線路１０ａおよび伝送線路１０ｂにおける互いに接続された端部の一方は、給電線路９ａと給電線路９ｂとの接続点に接続され、もう一方は接地される。 Of the ends of the transmission line 10a and the transmission line 10b, the ends on the same side are connected to each other. One of the end portions of the transmission line 10a and the transmission line 10b connected to each other is connected to the connection point between the power supply line 9a and the power supply line 9b, and the other is grounded.

図１に示した信号導体３ａおよび信号導体３ｂは、地導体６と合わせて、高周波信号を伝送する伝送線路として機能する。図２においては、給電線路９ａが信号導体３ａに対応し、給電線路９ｂが信号導体３ｂに対応する。伝送線路１０ａは、図１に示した信号導体４ａに対応し、伝送線路１０ｂは、信号導体４ｂに対応する。 The signal conductor 3a and the signal conductor 3b shown in FIG. 1 together with the ground conductor 6 function as a transmission line for transmitting a high frequency signal. In FIG. 2, the feeding line 9a corresponds to the signal conductor 3a, and the feeding line 9b corresponds to the signal conductor 3b. The transmission line 10a corresponds to the signal conductor 4a shown in FIG. 1, and the transmission line 10b corresponds to the signal conductor 4b.

放熱構造１の効果を説明する前に、従来の放熱構造について説明する。
図３Ａは、従来の放熱構造１００を示す斜視図である。図３Ｂは、放熱構造１００を、図３ＡのＡ－Ａ’線で切断した断面を示す断面図である。図３Ｃは、放熱構造１００を、図３ＡのＢ－Ｂ’線で切断した断面を示す断面図である。Before explaining the effect of the heat dissipation structure 1, the conventional heat dissipation structure will be described.
FIG. 3A is a perspective view showing a conventional heat dissipation structure 100. FIG. 3B is a cross-sectional view showing a cross section of the heat dissipation structure 100 cut along the line AA'of FIG. 3A. FIG. 3C is a cross-sectional view showing a cross section of the heat dissipation structure 100 cut along the line BB'of FIG. 3A.

図３Ａ、図３Ｂおよび図３Ｃに示すように、放熱構造１００は、高周波信号が入力される入力端子１０１ａ、高周波信号が出力される出力端子１０１ｂ、信号導体１０２ａ、信号導体１０２ｂ、信号導体１０３ａ、誘電体基板１０４、地導体１０５および接続導体１０６を備える。 As shown in FIGS. 3A, 3B and 3C, the heat dissipation structure 100 has an input terminal 101a for inputting a high frequency signal, an output terminal 101b for outputting a high frequency signal, a signal conductor 102a, a signal conductor 102b, and a signal conductor 103a. It includes a dielectric substrate 104, a ground conductor 105, and a connecting conductor 106.

信号導体１０２ａは、誘電体基板１０４の第１の面（＋ｚ方向の面）に設けられ、一方の端部が入力端子１０１ａに接続され、他方の端部が信号導体１０２ｂの端部に接続される。信号導体１０２ｂは、誘電体基板１０４の第１の面に設けられ、一方の端部が出力端子１０１ｂに接続され、他方の端部が信号導体１０２ａにおける、入力端子１０１ａとは反対側の端部に接続される。信号導体１０３ａは、誘電体基板１０４の第１の面に設けられ、動作周波数の波長の４分の１の長さを有し、信号導体１０２ａと信号導体１０２ｂとの接続点に接続されている。 The signal conductor 102a is provided on the first surface (plane in the + z direction) of the dielectric substrate 104, one end thereof is connected to the input terminal 101a, and the other end is connected to the end of the signal conductor 102b. To. The signal conductor 102b is provided on the first surface of the dielectric substrate 104, one end thereof is connected to the output terminal 101b, and the other end is the end portion of the signal conductor 102a opposite to the input terminal 101a. Connected to. The signal conductor 103a is provided on the first surface of the dielectric substrate 104, has a length of one-fourth of the wavelength of the operating frequency, and is connected to the connection point between the signal conductor 102a and the signal conductor 102b. ..

図３Ｂおよび図３Ｃに示すように、放熱構造１００は、放熱構造１における、信号導体４ｂと接続導体７ａとに対応する各部材を備えていない。放熱構造１００において、信号導体１０２ａ、信号導体１０２ｂおよび信号導体１０３ａは、地導体１０５と合わせて、高周波信号を伝送する伝送線路として機能する。信号導体１０３ａの一方の端部は、接続導体１０６によって地導体１０５に接続されている。 As shown in FIGS. 3B and 3C, the heat dissipation structure 100 does not include each member corresponding to the signal conductor 4b and the connection conductor 7a in the heat dissipation structure 1. In the heat dissipation structure 100, the signal conductor 102a, the signal conductor 102b, and the signal conductor 103a, together with the ground conductor 105, function as a transmission line for transmitting a high frequency signal. One end of the signal conductor 103a is connected to the ground conductor 105 by a connecting conductor 106.

図４は、従来の放熱構造１００の等価回路を示す回路図である。図３Ｂに示した接続導体１０６の大きさが動作周波数の波長と比較して十分に小さい場合、この接続導体１０６の影響は小さく無視することができる。従って、放熱構造１００は、図４に示す等価回路で表される。図４に示す等価回路は、図２に示した等価回路から伝送線路１０ｂが除去された回路である。 FIG. 4 is a circuit diagram showing an equivalent circuit of the conventional heat dissipation structure 100. When the size of the connecting conductor 106 shown in FIG. 3B is sufficiently small compared to the wavelength of the operating frequency, the influence of the connecting conductor 106 is small and can be ignored. Therefore, the heat dissipation structure 100 is represented by the equivalent circuit shown in FIG. The equivalent circuit shown in FIG. 4 is a circuit in which the transmission line 10b is removed from the equivalent circuit shown in FIG.

図４に示す放熱構造１００の等価回路において、給電線路１０７ａと給電線路１０７ｂとの接続点から伝送線路１０８ａをみた入力インピーダンスＺｉｎは、伝送線路１０８ａの特性インピーダンスＺｓと電気長θを用いて、下記式（１）のように表現される。

Figure 0007072743000001
In the equivalent circuit of the heat dissipation structure 100 shown in FIG. 4, the input impedance Z in when the transmission line 108a is viewed from the connection point between the power supply line 107a and the power supply line 107b is determined by using the characteristic impedance Zs and the electrical length θ of the transmission line 108a. It is expressed as the following equation (1).

Figure 0007072743000001

電気長θは、下記式（２）のように表現される。下記式（２）において、ｌは伝送線路１０８ａの物理長、βは位相定数である。

Figure 0007072743000002
The electric length θ is expressed by the following equation (2). In the following equation (2), l is the physical length of the transmission line 108a and β is the phase constant.

Figure 0007072743000002

位相定数βは、実効波長λｅｆｆを用いて、下記式（３）のように表現される。

Figure 0007072743000003
The phase constant β is expressed by the following equation (3) using the effective wavelength λ eff .

Figure 0007072743000003

上記式（１）、上記式（２）および上記式（３）を用いることで、入力インピーダンスＺｉｎは、下記式（４）のように表現される。

Figure 0007072743000004
By using the above equation (1), the above equation (2) and the above equation (3), the input impedance Z in is expressed as the following equation (4).

Figure 0007072743000004

上記式（４）において、ｌ＝λｅｆｆ／４である場合、Ｚｉｎ＝∞となり開放とみなすことができる。従って、入力端子１０１ａ側の内部インピーダンス、出力端子１０１ｂ側の負荷インピーダンス、および、給電線路１０７ａおよび１０７ｂの特性インピーダンスを、全て同一のインピーダンスＺ０とした場合、ｌ＝λｅｆｆ／４となる周波数においては、入力端子１０１ａから入力された高周波信号は、反射することなく、出力端子１０１ｂへ出力される。しかしながら、ｌ＝λｅｆｆ／４となる周波数以外の周波数では、Ｚｉｎ≠∞となるので、入力端子１０１ａから入力された高周波信号の一部は、反射し、入力端子１０１ａに出力される。In the above equation (4), when l = λ eff / 4, Z in = ∞ and can be regarded as open. Therefore, when the internal impedance on the input terminal 101a side, the load impedance on the output terminal 101b side, and the characteristic impedance of the feeding lines 107a and 107b are all the same impedance Z0 , at a frequency where l = λ eff / 4. Is that the high frequency signal input from the input terminal 101a is output to the output terminal 101b without being reflected. However, at frequencies other than the frequency where l = λ eff / 4, Z in ≠ ∞, so that a part of the high frequency signal input from the input terminal 101a is reflected and output to the input terminal 101a.

図５は、放熱構造１００の等価回路における、反射振幅の計算結果の例を示すグラフである。図５において、横軸は、θ＝π／２（ｒａｄ）となる周波数で規格化された周波数であり、縦軸は、反射振幅を表している。図５の反射振幅の計算結果は、Ｚ０＝５０Ωとし、伝送線路１０８ａの特性インピーダンスＺＳを、２５Ω（一点破線）、５０Ω（実線）、１００Ω（破線）と変化させて反射振幅を計算した結果である。なお、以下の反射振幅の計算では、全てＺ０＝５０Ωとしている。FIG. 5 is a graph showing an example of the calculation result of the reflection amplitude in the equivalent circuit of the heat dissipation structure 100. In FIG. 5, the horizontal axis represents a frequency normalized by a frequency of θ = π / 2 (rad), and the vertical axis represents a reflection amplitude. The calculation result of the reflection amplitude in FIG. 5 is Z 0 = 50Ω, and the characteristic impedance Z S of the transmission line 108a is changed to 25Ω (dashed line), 50Ω (solid line), and 100Ω (broken line) to calculate the reflection amplitude. The result. In the following calculation of reflection amplitude, Z 0 = 50Ω.

図５から明らかなように、特性インピーダンスＺＳが大きくなるつれて一定の反射振幅以下となる帯域幅が広くなっている。仮に、反射振幅－２０ｄＢ以下を目標とした場合、ＺＳ＝２５Ωでは比帯域幅１２％となり、ＺＳ＝１００Ωでは比帯域幅４８％となり、前述の通り、特性インピーダンスＺＳが大きい方がより広帯域になっている。これは、上記式（１）において、入力インピーダンスＺｉｎを、電気長θに依らず大きくしようとすると、特性インピーダンスＺＳを大きくする必要があることから明らかである。従って、より広い帯域幅を得ようとすると、特性インピーダンスＺＳを高く設計する必要がある。As is clear from FIG. 5, as the characteristic impedance Z S increases, the bandwidth that becomes a certain reflection amplitude or less becomes wider. If the target is a reflection amplitude of -20 dB or less, the specific bandwidth is 12% when Z S = 25 Ω, the specific bandwidth is 48% when Z S = 100 Ω, and as described above, the larger the characteristic impedance Z S , the more. It has a wide band. This is clear from the fact that in the above equation (1), if the input impedance Z in is to be increased regardless of the electrical length θ, the characteristic impedance Z S needs to be increased. Therefore, in order to obtain a wider bandwidth, it is necessary to design the characteristic impedance ZS to be high.

例えば、放熱構造１００において、誘電体基板１０４の第２の面に地導体１０５が形成され、誘電体基板１０４の第１の面における信号導体として、銅箔で形成されたマイクロストリップ線路と呼ばれる伝送線路を用いる。この場合、参考文献１に示すように、誘電体基板１０４の厚さｈ、誘電体基板１０４の比誘電率εｒおよび信号導体の幅Ｗを用いることで、特性インピーダンスＺＳは、下記式（５）に従って計算することができる。

Figure 0007072743000005
（参考文献１）Ｊ． Ｓ． Ｈｏｎｇ ａｎｄ Ｍ． Ｊ． Ｌａｎｃａｓｔｅｒ， “ Ｍｉｃｒｏｓｔｒｉｐ Ｆｉｌｔｅｒｓ ｆｏｒ ＲＦ／Ｍｉｃｒｏｗａｖｅ Ａｐｐｌｉｃａｔｉｏｎｓ ”， Ｓｅｃｏｎｄ Ｅｄｉｔｉｏｎ，Ｊｏｈｎ Ｗｉｌｅｙ ＆ Ｓｏｎｓ Ｉｎｃ， ２０１１．For example, in the heat dissipation structure 100, a ground conductor 105 is formed on the second surface of the dielectric substrate 104, and a transmission called a microstrip line formed of copper foil is used as a signal conductor on the first surface of the dielectric substrate 104. Use a railroad. In this case, as shown in Reference 1, by using the thickness h of the dielectric substrate 104, the relative permittivity ε r of the dielectric substrate 104, and the width W of the signal conductor, the characteristic impedance Z S is expressed by the following equation ( It can be calculated according to 5).

Figure 0007072743000005
(Reference 1) J. S. Hong and M. J. Lancaster, "Microstrip Filters for RF / Microwave Applications", Second Edition, John Wiley & Sons Inc, 2011.

上記式（５）を用いた特性インピーダンスＺＳの算出では、マイクロストリップ線路を形成する銅箔の厚さの値が、誘電体基板１０４の厚さｈの値に比べて非常に小さいと仮定している。上記式（５）は近似式の一例であり、マイクロストリップ線路に関しては多数の近似式が報告されており、上記式（５）以外の近似式を用いて特性インピーダンスＺＳの算出を行ってもよい。In the calculation of the characteristic impedance ZS using the above equation (5), it is assumed that the value of the thickness of the copper foil forming the microstrip line is much smaller than the value of the thickness h of the dielectric substrate 104. ing. The above equation (5) is an example of an approximate equation, and many approximate equations have been reported for microstrip lines, and even if the characteristic impedance Z S is calculated using an approximate equation other than the above equation (5). good.

上記式（５）から明らかなように、マイクロストリップ線路では、誘電体基板１０４の厚さｈおよび誘電体基板の比誘電率εｒを不変とした場合、特性インピーダンスＺｓは、信号導体の線路幅Ｗを狭くすることによって大きくすることが可能である。As is clear from the above equation (5), in the microstrip line, when the thickness h of the dielectric substrate 104 and the relative permittivity ε r of the dielectric substrate are unchanged, the characteristic impedance Zs is the line width of the signal conductor. It can be increased by narrowing W.

次に、基板上に実装されたデバイスからの放熱について説明する。
厳密には、基板上に実装されたデバイスからの放熱経路として、銅箔による伝熱の他、誘電体基板または空気を介した放熱が考えられる。しかし、自然対流下において、空気は熱抵抗が大きく、特に小型なパッケージ部品では放熱面積が小さく、放熱しづらい。Next, heat dissipation from the device mounted on the board will be described.
Strictly speaking, as a heat dissipation path from the device mounted on the substrate, heat transfer by a copper foil or heat dissipation via a dielectric substrate or air can be considered. However, under natural convection, air has a large thermal resistance, and especially for small package parts, the heat dissipation area is small and it is difficult to dissipate heat.

さらに、誘電体基板として安価な樹脂系の基板を採用した場合、樹脂系の基板の熱抵抗率は、銅などの金属と比較して１００～１０００倍程度であり、非常に熱抵抗が大きい。従って、放熱構造１の放熱性は、信号導体を形成する銅箔の熱伝導による放熱が主要素であると考え、信号導体４ａの熱抵抗について説明する。 Further, when an inexpensive resin-based substrate is used as the dielectric substrate, the thermal resistance of the resin-based substrate is about 100 to 1000 times that of a metal such as copper, and the thermal resistance is very high. Therefore, it is considered that the heat dissipation of the heat dissipation structure 1 is mainly due to heat dissipation by the heat conduction of the copper foil forming the signal conductor, and the thermal resistance of the signal conductor 4a will be described.

前提として、信号導体４ａが接続される地導体６は、熱抵抗が非常に小さいものとしている。信号導体４ａの熱抵抗ＲＳは、下記式（６）を用いて表現される。下記式（６）において、ρは、熱抵抗率であり、ｔは、信号導体４ａの厚さであり、Ｗは、信号導体４ａの幅であり、ｌは、信号導体４ａの長さである。

Figure 0007072743000006
As a premise, the ground conductor 6 to which the signal conductor 4a is connected has a very small thermal resistance. The thermal resistance RS of the signal conductor 4a is expressed by using the following equation (6). In the following equation (6), ρ is the thermal resistance, t is the thickness of the signal conductor 4a, W is the width of the signal conductor 4a, and l is the length of the signal conductor 4a. ..

Figure 0007072743000006

信号導体４ａの熱抵抗ＲＳを小さくするためには、上記式（６）に従って信号導体４ａの長さｌを短くするか、厚さｔおよび幅Ｗを大きくする必要がある。しかしながら、前述の通り、信号導体４ａの長さｌは、動作周波数の波長においてｌ＝λｅｆｆ／４とする必要があり、動作周波数によって決定される。In order to reduce the thermal resistance RS of the signal conductor 4a, it is necessary to shorten the length l of the signal conductor 4a or increase the thickness t and the width W according to the above equation (6). However, as described above, the length l of the signal conductor 4a needs to be l = λ eff / 4 at the wavelength of the operating frequency, and is determined by the operating frequency.

一方、誘電体基板５上に、銅箔を用いて信号導体４ａを形成した場合、基本的に、銅箔厚さがそのまま信号導体４ａの厚さｔとなる。なお、メッキなどによって信号導体４ａの厚さｔを大きくすることも可能であるが、通常の基板製造プロセスでは製造可能なメッキ厚さに制限がある上、基板製造コストが高くなる。これにより、熱抵抗Ｒｓを小さくするためには、信号導体４ａの幅Ｗを広くすることが必要である。 On the other hand, when the signal conductor 4a is formed on the dielectric substrate 5 by using a copper foil, the thickness of the copper foil is basically the same as the thickness t of the signal conductor 4a. Although it is possible to increase the thickness t of the signal conductor 4a by plating or the like, the plating thickness that can be manufactured in a normal substrate manufacturing process is limited, and the substrate manufacturing cost is high. Therefore, in order to reduce the thermal resistance Rs, it is necessary to widen the width W of the signal conductor 4a.

動作帯域幅を広げるためには、信号導体４ａの幅Ｗを狭くする必要があるが、放熱性を改善するためには、信号導体４ａの幅Ｗを広くする必要がある。従って、放熱構造１００において、動作帯域幅と放熱性とはトレードオフの関係にあり、一方を改善しようとすると、もう一方が劣化する。 In order to widen the operating bandwidth, it is necessary to narrow the width W of the signal conductor 4a, but in order to improve the heat dissipation, it is necessary to widen the width W of the signal conductor 4a. Therefore, in the heat dissipation structure 100, there is a trade-off relationship between the operating bandwidth and the heat dissipation property, and if one is to be improved, the other is deteriorated.

実施の形態１に係る放熱構造１の動作を、図１を参照しながら説明する。
まず、放熱構造１による放熱は、基本的に、従来の放熱構造１００と同じである。放熱構造１では、信号導体４ａと信号導体４ｂとが並列に接続されているため、信号導体４ａおよび信号導体４ｂの合成熱抵抗ＲＳｅは、下記式（７）によって表される。ＲｓＡは、信号導体４ａの熱抵抗であり、ＲｓＢは、信号導体４ｂの熱抵抗である。

Figure 0007072743000007
The operation of the heat dissipation structure 1 according to the first embodiment will be described with reference to FIG.
First, the heat radiated by the heat radiating structure 1 is basically the same as that of the conventional heat radiating structure 100. In the heat dissipation structure 1, since the signal conductor 4a and the signal conductor 4b are connected in parallel, the combined thermal resistance R Se of the signal conductor 4a and the signal conductor 4b is represented by the following equation (7). R sA is the thermal resistance of the signal conductor 4a, and R sB is the thermal resistance of the signal conductor 4b.

Figure 0007072743000007

信号導体４ａと信号導体４ｂとの厚さｔ、幅Ｗおよび長さｌを用いて、熱抵抗ＲＳは、上記式（６）によって表現される。２ＲｓＡ＝２ＲｓＢ＝ＲＳとした場合に、上記式（７）によって、信号導体４ａおよび信号導体４ｂの合成熱抵抗ＲＳｅと信号導体４ａの熱抵抗ＲＳは等しくなる（ＲＳｅ＝ＲＳ）。Using the thickness t, width W, and length l of the signal conductor 4a and the signal conductor 4b, the thermal resistance RS is expressed by the above equation (6). When 2R sA = 2R sB = RS , the combined thermal resistance R Se of the signal conductor 4a and the signal conductor 4b and the thermal resistance R S of the signal conductor 4a become equal (R Se = R) according to the above equation (7). S ).

図２に示した等価回路を参照しながら、放熱構造１の電気的な動作について説明する。一般に、特性インピーダンスＺＳを有した２つの伝送線路が電気的に結合して結合線路を構成する場合、この結合線路は、偶モードおよび奇モードと呼ばれる２つの伝搬モードを有する。このとき、各モードにおいて、特性インピーダンスおよび伝搬定数が存在する。 The electrical operation of the heat dissipation structure 1 will be described with reference to the equivalent circuit shown in FIG. In general, when two transmission lines having a characteristic impedance ZS are electrically coupled to form a coupled line, the coupled line has two propagation modes called even mode and odd mode. At this time, the characteristic impedance and the propagation constant exist in each mode.

偶モードにおける特性インピーダンスをＺ０ｅおよび電気長をθｅとし、奇モードにおける特性インピーダンスＺ０ｏおよび電気長をθｏとする。参考文献２に示すように、理想的な等価回路において、偶モードの特性インピーダンスＺ０ｅと奇モードの特性インピーダンスＺ０ｏは、これらの電気的な結合の強度を表す結合度ｃを用いて、下記式（８ａ）および下記式（８ｂ）のように表現される。結合度ｃは、０＜ｃ＜１である。

Figure 0007072743000008
（参考文献２）Ｒ． Ｅ． Ｃｏｌｌｉｎ， “ Ｆｏｕｎｄａｔｉｏｎｓ ｆｏｒ Ｍｉｃｒｏｗａｖｅ Ｅｎｇｉｎｅｅｒｉｎｇ ”， Ｓｅｃｏｎｄ Ｅｄｉｔｉｏｎ， ＭｃＧＲＡＷ－ＨＩＬＬ，Ｉｎｃ，１９９２．Let Z 0e be the characteristic impedance and the electrical length be θ e in the even mode, and θ o be the characteristic impedance Z 0 o and the electrical length in the odd mode. As shown in Reference 2, in an ideal equivalent circuit, the characteristic impedance Z 0e in the even mode and the characteristic impedance Z 0o in the odd mode are described below using the coupling degree c representing the strength of these electrical couplings. It is expressed as the formula (8a) and the following formula (8b). The degree of coupling c is 0 <c <1.

Figure 0007072743000008
(Reference 2) R. E. Collin, "Foundations for Microwave Engineering", Second Edition, McGraw-HILL, Inc, 1992.

上記式（８ａ）および上記式（８ｂ）において、偶モードの特性インピーダンスＺ０ｅに着目すると、結合度ｃを１に近づけていくと、根号内の分母が０に近づくため、偶モードの特性インピーダンスＺ０ｅは発散する。例えば、上記式（８ａ）において、結合度ｃを、ｃ≧３／５とすると、Ｚ０ｅ≧２ＺＳとなり、元の伝送線路の特性インピーダンスＺＳよりも２倍以上大きな偶モードの特性インピーダンスＺ０ｅが実現される。図２に示した等価回路における給電線路９ａと給電線路９ｂの節点から結合線路１１をみた入力インピーダンスＺｉｎｅは、結合線路１１における、偶モードの特性インピーダンスＺ０ｅと偶モードの電気長θｅを用いて、下記式（９）で表現される。

Figure 0007072743000009
Focusing on the characteristic impedance Z 0e of the even mode in the above equations (8a) and (8b), the characteristic of the even mode is that the denominator in the radical symbol approaches 0 as the coupling degree c approaches 1. Impedance Z 0e diverges. For example, in the above equation (8a), if the degree of coupling c is c ≧ 3/5, then Z 0e ≧ 2Z S , which is the characteristic impedance Z of the even mode that is more than twice as large as the characteristic impedance Z S of the original transmission line. 0e is realized. The input impedance Zine when the coupling line 11 is viewed from the node of the feeding line 9a and the feeding line 9b in the equivalent circuit shown in FIG. 2 sets the characteristic impedance Z 0e of the even mode and the electrical length θ e of the even mode in the coupling line 11. It is expressed by the following equation (9).

Figure 0007072743000009

偶モードにおける電気長θｅは、偶モードの位相定数βｅと、伝送線路１０ａおよび伝送線路１０ｂの物理長ｌを用いることで、下記式（１０）によって表現される。

Figure 0007072743000010
The electrical length θ e in the even mode is expressed by the following equation (10) by using the phase constant β e in the even mode and the physical length l of the transmission line 10a and the transmission line 10b.

Figure 0007072743000010

偶モードの位相定数βｅは、偶モードにおける実効波長λｅｆｆｅを用いて下記式（１１）によって表現される。

Figure 0007072743000011
The phase constant β e in the even mode is expressed by the following equation (11) using the effective wavelength λ effe in the even mode.

Figure 0007072743000011

放熱構造１は、従来の放熱構造１００と同様に、動作周波数において、θｅ＝π／２となるように、物理長ｌが決定されることにより、Ｚｉｎｅ＝∞となる。すなわち、動作周波数において、入力端子２ａに入力された高周波信号は、反射なく、出力端子２ｂから出力される。上記式（９）と電気長θをθｅとした上記式（１）とを比較すると、両式の違いは、特性インピーダンスＺＳとＺ０ｅ／２である。Similar to the conventional heat dissipation structure 100, the heat dissipation structure 1 has Zine = ∞ by determining the physical length l so that θ e = π / 2 at the operating frequency. That is, at the operating frequency, the high frequency signal input to the input terminal 2a is output from the output terminal 2b without reflection. Comparing the above equation (9) with the above equation (1) in which the electrical length θ is θ e , the difference between the two equations is the characteristic impedance Z S and Z 0e / 2.

結合導体８における、偶モードの特性インピーダンスおよび奇モードの特性インピーダンスとの電気的な結合度ｃを大きくすることにより、偶モードの特性インピーダンスＺ０ｅを、特性インピーダンスＺＳの２倍以上（Ｚ０ｅ≧２ＺＳ）にできる。従って、２ＺＳ＝Ｚ０ｅとなるように、信号導体４ａと信号導体４ｂとの幅Ｗと、信号導体４ａと信号導体４ｂとの厚さ方向の間隔が設計された放熱構造１は、放熱構造１００との間で同一の反射特性となる。このとき、結合線路１１の熱抵抗Ｒｓ２を、放熱構造１００の熱抵抗ＲＳと比較し、ＲＳｅ＜ＲＳとなるように設計することで、放熱構造１は、反射特性を、放熱構造１００と同一としながら、放熱性の改善が可能となる。By increasing the degree of electrical coupling c between the characteristic impedance of the even mode and the characteristic impedance of the odd mode in the coupled conductor 8, the characteristic impedance Z 0e of the even mode is more than twice the characteristic impedance Z S (Z 0e ). ≧ 2Z S ). Therefore, the heat dissipation structure 1 in which the width W between the signal conductor 4a and the signal conductor 4b and the distance between the signal conductor 4a and the signal conductor 4b in the thickness direction are designed so that 2Z S = Z 0e is a heat dissipation structure. It has the same reflection characteristics as 100. At this time, by comparing the thermal resistance R s2 of the coupling line 11 with the thermal resistance RS of the heat radiating structure 100 and designing so that R Se < RS , the heat radiating structure 1 has a reflection characteristic and a heat radiating structure. It is possible to improve the heat dissipation while making it the same as 100.

放熱構造１においては、放熱性の改善のために、線路幅Ｗを大きくしつつ、偶モードの特性インピーダンスＺ０ｅと特性インピーダンスＺＳとが、２ＺＳ＝Ｚ０ｅの関係となることが望ましい。従って、放熱構造１では、製造上可能な限り、信号導体４ａと信号導体４ｂとの厚さ方向の間隔を小さくし、結合度ｃを大きくすることが求められる。In the heat dissipation structure 1, it is desirable that the characteristic impedance Z 0e and the characteristic impedance Z S in the even mode have a relationship of 2Z S = Z 0e while increasing the line width W in order to improve the heat dissipation. Therefore, in the heat dissipation structure 1, it is required to reduce the distance between the signal conductor 4a and the signal conductor 4b in the thickness direction and increase the degree of coupling c as much as possible in manufacturing.

図６は、放熱構造１の等価回路における反射振幅の計算結果の例を示すグラフである。図６において、横軸はθ＝π／２（ｒａｄ）となる周波数で規格化された周波数であり、縦軸は反射振幅を表している。図６に示す反射振幅の計算結果は、Ｚ０＝５０Ωとし、結合線路１１の偶モードの特性インピーダンスＺＯｅを、５０Ω（一点破線）、１００Ω（実線）、２００Ω（破線）と変化させて反射振幅を計算した結果である。FIG. 6 is a graph showing an example of the calculation result of the reflection amplitude in the equivalent circuit of the heat dissipation structure 1. In FIG. 6, the horizontal axis represents a frequency normalized by a frequency of θ = π / 2 (rad), and the vertical axis represents a reflection amplitude. The calculation result of the reflection amplitude shown in FIG. 6 is that Z 0 = 50Ω, and the characteristic impedance Z Oe of the even mode of the coupled line 11 is changed to 50Ω (dashed line), 100Ω (solid line), and 200Ω (dashed line) for reflection. This is the result of calculating the amplitude.

図６から明らかなように、特性インピーダンスＺＯｅが大きくなるつれて一定の反射振幅以下となる帯域幅が広くなっている。仮に、反射振幅－２０ｄＢ以下を目標とした場合、ＺＯｅ＝５０Ωでは比帯域幅１２％となり、ＺＯｅ＝２００Ωでは比帯域幅４８％となっており、特性インピーダンスＺＯｅが大きい方がより広帯域になっている。これは、図５に示したように、放熱構造１００の等価回路において、特性インピーダンスＺＳを、２５Ω、５０Ω、１００Ωと変化させたときの計算結果と等しい。等価回路の計算結果から明らかなように、放熱構造１において偶モードの特性インピーダンスＺ０ｅを設計することで、放熱構造１００と同等の電気特性が得らえる。As is clear from FIG. 6, as the characteristic impedance Z Oe increases, the bandwidth that becomes below a certain reflection amplitude becomes wider. If the target is a reflection amplitude of -20 dB or less, the specific bandwidth is 12% when Z Oe = 50 Ω, and the specific bandwidth is 48% when Z Oe = 200 Ω. The larger the characteristic impedance Z Oe , the wider the bandwidth. It has become. This is equivalent to the calculation result when the characteristic impedance ZS is changed to 25Ω , 50Ω, and 100Ω in the equivalent circuit of the heat dissipation structure 100 as shown in FIG. As is clear from the calculation result of the equivalent circuit, by designing the characteristic impedance Z 0e of the even mode in the heat dissipation structure 1, the same electrical characteristics as the heat dissipation structure 100 can be obtained.

図７は、実施の形態１に係る放熱構造１と従来の放熱構造１００とにおける反射振幅の電磁界解析結果を示すグラフであり、横軸は周波数、縦軸は反射振幅を示している。図７に示す反射振幅の電磁界解析結果は、誘電体基板５または１０４の誘電率を３．７とし、信号導体４ａ、信号導体４ｂおよび信号導体１０３ａのそれぞれの長さを１８．７５ｍｍとして得られたものである。符号Ｃを付した破線の関係が、放熱構造１の電磁界解析結果であり、符号Ｄを付した破線の関係が、放熱構造１００の電磁界解析結果である。 FIG. 7 is a graph showing the electromagnetic field analysis results of the reflection amplitudes of the heat dissipation structure 1 and the conventional heat dissipation structure 100 according to the first embodiment, in which the horizontal axis shows the frequency and the vertical axis shows the reflection amplitude. The electromagnetic field analysis result of the reflection amplitude shown in FIG. 7 is obtained with the dielectric constant of the dielectric substrate 5 or 104 being 3.7 and the lengths of the signal conductor 4a, the signal conductor 4b and the signal conductor 103a being 18.75 mm. It was done. The relationship of the broken line with the reference numeral C is the electromagnetic field analysis result of the heat dissipation structure 1, and the relationship of the broken line with the reference numeral D is the electromagnetic field analysis result of the heat dissipation structure 100.

図８Ａは、放熱構造１を、図１ＡのＡ－Ａ’線で切断した断面および寸法を示す断面図である。図８Ｂは、放熱構造１００を、図３ＡのＡ－Ａ’線で切断した断面および寸法を示す断面図である。図８Ａおよび図８Ｂにおいて、信号導体４ａ、信号導体４ｂおよび信号導体１０３ａの厚さｔｃは、０．０３６ｍｍであり、誘電体基板５および誘電体基板１０４の厚さｈは、１．５ｍｍである。信号導体４ａと信号導体４ｂとの厚さ方向の間隔ｄは、０．１５ｍｍである。信号導体４ａと信号導体４ｂとの幅Ｗは、１．１ｍｍであり、信号導体１０３ａの幅Ｗは、１．５ｍｍである。FIG. 8A is a cross-sectional view showing a cross section and dimensions of the heat dissipation structure 1 cut along the line AA'of FIG. 1A. FIG. 8B is a cross-sectional view showing a cross section and dimensions of the heat dissipation structure 100 cut along the line AA'of FIG. 3A. In FIGS. 8A and 8B, the thickness t c of the signal conductor 4a, the signal conductor 4b, and the signal conductor 103a is 0.036 mm, and the thickness h of the dielectric substrate 5 and the dielectric substrate 104 is 1.5 mm. be. The distance d between the signal conductor 4a and the signal conductor 4b in the thickness direction is 0.15 mm. The width W of the signal conductor 4a and the signal conductor 4b is 1.1 mm, and the width W of the signal conductor 103a is 1.5 mm.

放熱構造１は、信号導体の幅Ｗを広くしつつ、より高い偶モードの特性インピーダンスＺ０ｅを実現するため、信号導体４ａと信号導体４ｂとの厚さ方向の間隔ｄが誘電体基板５の厚さｈの１０分の１程度と設定されている。図７に示すように、放熱構造１の反射振幅と放熱構造１００の反射振幅は、概ね一致しており、同等の動作帯域幅が得られている。図８Ｂおよび図８Ｃに示した寸法に基づいて、放熱構造１と放熱構造１００との熱抵抗の比ＲＳｅ／ＲＳを算出すると、ＲＳｅ／ＲＳ＝０．６８となり、放熱構造１００と比較して、熱抵抗が３０％程度低減されている。In the heat dissipation structure 1, in order to realize a higher even mode characteristic impedance Z0e while widening the width W of the signal conductor, the distance d in the thickness direction between the signal conductor 4a and the signal conductor 4b is the dielectric substrate 5. It is set to be about 1/10 of the thickness h. As shown in FIG. 7, the reflection amplitude of the heat dissipation structure 1 and the reflection amplitude of the heat dissipation structure 100 are substantially the same, and the same operating bandwidth is obtained. When the ratio R Se / RS of the thermal resistance between the heat radiation structure 1 and the heat radiation structure 100 is calculated based on the dimensions shown in FIGS. 8B and 8C, R Se / RS = 0.68, and the heat radiation structure 100 In comparison, the thermal resistance is reduced by about 30%.

図９Ａは、実施の形態１に係る放熱構造１の変形例である放熱構造１Ａを示す斜視図である。図９Ｂは、放熱構造１Ａの変形例を、図９ＡのＡ－Ａ’線で切断した断面を示す断面図である。図９Ｃは、放熱構造１Ａの変形例を、図９ＡのＢ－Ｂ’線で切断した断面を示す断面図である。放熱構造１Ａは、放熱構造１の構成に加え、伝熱部材１２および金属体１３を備える。放熱構造１Ａにおける地導体６には、伝熱部材１２を介して金属体１３が接続されている。これらの部材を有することで、放熱構造１Ａは、地導体６からの放熱性が改善する。伝熱部材１２には、熱伝導グリス、熱伝導シートあるいは導電性接着剤が用いられる。金属体１３は、放熱性をさらに改善するために放熱フィンを備えてもよい。 FIG. 9A is a perspective view showing a heat dissipation structure 1A which is a modification of the heat dissipation structure 1 according to the first embodiment. FIG. 9B is a cross-sectional view showing a modified example of the heat dissipation structure 1A cut along the line AA'of FIG. 9A. FIG. 9C is a cross-sectional view showing a modified example of the heat dissipation structure 1A cut along the line BB'of FIG. 9A. The heat radiating structure 1A includes a heat transfer member 12 and a metal body 13 in addition to the structure of the heat radiating structure 1. A metal body 13 is connected to the ground conductor 6 in the heat dissipation structure 1A via a heat transfer member 12. By having these members, the heat dissipation structure 1A improves the heat dissipation from the ground conductor 6. A heat conductive grease, a heat conductive sheet, or a conductive adhesive is used for the heat transfer member 12. The metal body 13 may be provided with heat radiation fins in order to further improve heat dissipation.

これまでの説明では、信号導体４ａおよび信号導体４ｂが、同一の線路幅である場合を示したが、両者の線路幅は異なっていてもよい。また、信号導体４ｂを、平面的にみて、信号導体４ａと重なるように配置した場合を示したが、例えば、信号導体４ａおよび信号導体４ｂは、長さ方向と垂直かつ誘電体基板５の平面方向へオフセットして配置されてもよい。放熱構造１の放熱性をより改善するためには、結合度ｃを大きくする必要があり、オフセット量は、線路幅Ｗ以下であるものとし、平面的にみて、信号導体４ａと信号導体４ｂの少なくとも一部が重なるように配置されていることが望ましい。 In the description so far, the case where the signal conductor 4a and the signal conductor 4b have the same line width has been shown, but the line widths of both may be different. Further, the case where the signal conductor 4b is arranged so as to overlap the signal conductor 4a when viewed in a plane is shown. For example, the signal conductor 4a and the signal conductor 4b are perpendicular to the length direction and the plane of the dielectric substrate 5. It may be arranged offset in the direction. In order to further improve the heat dissipation of the heat dissipation structure 1, it is necessary to increase the coupling degree c, and the offset amount is assumed to be the line width W or less, and the signal conductor 4a and the signal conductor 4b are viewed in a plane. It is desirable that at least a part of them overlap each other.

また、これまでの説明では、誘電体基板５の第２の面に地導体６が配置され、第１の面に信号導体が形成された、いわゆるマイクロストリップ線路構造である放熱構造１または１Ａを示した。ただし、放熱構造１または１Ａは、誘電体基板５の両面に地導体を設け、誘電体基板５の内層に信号導体を設けたストリップ線路構造であってもよい。 Further, in the description so far, the heat dissipation structure 1 or 1A which is a so-called microstrip line structure in which the ground conductor 6 is arranged on the second surface of the dielectric substrate 5 and the signal conductor is formed on the first surface is provided. Indicated. However, the heat dissipation structure 1 or 1A may be a strip line structure in which ground conductors are provided on both sides of the dielectric substrate 5 and signal conductors are provided in the inner layer of the dielectric substrate 5.

以上のように、実施の形態１に係る放熱構造１は、高周波信号の入力端子２ａに一方の端部が接続された信号導体３ａと、高周波信号の出力端子２ｂに一方の端部が接続され、信号導体３ａにおける入力端子２ａとは反対側の端部に他方の端部が接続された信号導体３ｂと、動作周波数の波長の４分の１の長さを有し、信号導体３ａと信号導体３ｂの接続点に端部が接続された信号導体４ａと、誘電体基板５の内層に設けられ、動作周波数の波長の４分の１の長さを有した信号導体４ｂと、信号導体４ｂの一方の端部を信号導体３ａと信号導体３ｂとの接続点に接続する接続導体７ａと、信号導体４ａの他方の端部を信号導体４ｂおよび地導体６に接続する接続導体７ｂとを備える。信号導体４ａは、信号導体３ａと信号導体３ｂとの接続点に接続され、信号導体４ｂは、平面的にみて、信号導体４ａと少なくとも一部が重なるように、信号導体４ａを含む平面と平行に配置されている。信号導体４ａと信号導体４ｂが並列に接続され、平面的にみて、信号導体４ａと信号導体４ｂが重なるように信号導体４ａを含む平面と平行に配置されている。これにより、放熱構造１は、放熱構造１００と同等の動作帯域幅で狭帯域化することなく、信号導体３ａと信号導体３ｂとの接続点から信号導体４ａおよび信号導体４ｂをみた熱抵抗を低減でき、放熱性を改善することができる。 As described above, in the heat dissipation structure 1 according to the first embodiment, one end is connected to the signal conductor 3a to which one end is connected to the input terminal 2a of the high frequency signal, and one end is connected to the output terminal 2b of the high frequency signal. , A signal conductor 3b to which the other end is connected to the end opposite to the input terminal 2a in the signal conductor 3a, and a signal conductor 3a having a length of one-fourth of the wavelength of the operating frequency. A signal conductor 4a whose end is connected to a connection point of the conductor 3b, a signal conductor 4b provided in the inner layer of the dielectric substrate 5 and having a length of one-fourth of the operating frequency wavelength, and a signal conductor 4b. It includes a connecting conductor 7a that connects one end to a connection point between the signal conductor 3a and the signal conductor 3b, and a connecting conductor 7b that connects the other end of the signal conductor 4a to the signal conductor 4b and the ground conductor 6. .. The signal conductor 4a is connected to the connection point between the signal conductor 3a and the signal conductor 3b, and the signal conductor 4b is parallel to the plane including the signal conductor 4a so that at least a part of the signal conductor 4a overlaps the signal conductor 4a when viewed in a plane. Is located in. The signal conductor 4a and the signal conductor 4b are connected in parallel, and are arranged in parallel with the plane including the signal conductor 4a so that the signal conductor 4a and the signal conductor 4b overlap each other when viewed in a plane. As a result, the heat dissipation structure 1 reduces the thermal resistance of the signal conductor 4a and the signal conductor 4b from the connection point between the signal conductor 3a and the signal conductor 3b without narrowing the band with the same operating bandwidth as the heat dissipation structure 100. It can improve heat dissipation.

実施の形態２．
１０Ａは、実施の形態２に係る放熱構造１Ｂを示す斜視図である。図１０Ｂは、放熱構造１Ｂを、図１０ＡのＡ－Ａ’線で切断した断面を示す断面図である。図１０Ｃは、放熱構造１Ｂを、図１０ＡのＢ－Ｂ’線で切断した断面を示す断面図である。図１０Ａ、図１０Ｂおよび図１０Ｃにおいて、放熱構造１Ｂは、例えば、高周波信号が入出力される高周波回路であり、入力端子２ａ、出力端子２ｂ、信号導体３ａ、信号導体３ｂ、信号導体４ａ、信号導体４ｂ、誘電体基板５、地導体６、接続導体７ｂ、接続導体７ｃ、および電極１４を備える。Embodiment 2.
10A is a perspective view showing the heat dissipation structure 1B according to the second embodiment. FIG. 10B is a cross-sectional view showing a cross section of the heat dissipation structure 1B cut along the line AA'of FIG. 10A. FIG. 10C is a cross-sectional view showing a cross section of the heat dissipation structure 1B cut along the line BB'of FIG. 10A. In FIGS. 10A, 10B and 10C, the heat dissipation structure 1B is, for example, a high frequency circuit into which a high frequency signal is input / output, and is an input terminal 2a, an output terminal 2b, a signal conductor 3a, a signal conductor 3b, a signal conductor 4a, and a signal. It includes a conductor 4b, a dielectric substrate 5, a ground conductor 6, a connecting conductor 7b, a connecting conductor 7c, and an electrode 14.

電極１４は、誘電体基板５の第２の面（－ｚ方向の面）に設けられ、地導体６の一部が除去されて形成された電極である。信号導体３ａは、誘電体基板５の第１の面（＋ｚ方向の面）に設けられ、一方の端部が入力端子２ａに接続され、他方の端部が信号導体３ｂの端部に接続された第１の信号導体である。信号導体３ｂは、誘電体基板５の第１の面に設けられ、一方の端部が出力端子２ｂに接続され、他方の端部が信号導体３ａにおける入力端子２ａとは反対側の端部に接続された第２の信号導体である。 The electrode 14 is an electrode provided on the second surface (plane in the −z direction) of the dielectric substrate 5 and formed by removing a part of the ground conductor 6. The signal conductor 3a is provided on the first surface (plane in the + z direction) of the dielectric substrate 5, one end is connected to the input terminal 2a, and the other end is connected to the end of the signal conductor 3b. It is the first signal conductor. The signal conductor 3b is provided on the first surface of the dielectric substrate 5, one end is connected to the output terminal 2b, and the other end is at the end of the signal conductor 3a opposite to the input terminal 2a. It is a connected second signal conductor.

信号導体４ａは、誘電体基板５の第１の面に設けられ、動作周波数の波長の４分の１の長さを有し、一方の端部が信号導体３ａと信号導体３ｂとの接続点に接続された第３の信号導体である。信号導体４ｂは、図１０Ｂおよび図１０Ｃに示すように、誘電体基板５の内層に設けられ、動作周波数の波長の４分の１の長さを有し、平面的にみて信号導体４ａと少なくとも一部が重なるように、信号導体４ａを含む平面と平行に配置された、第４の信号導体である。誘電体基板５における第１の面とは反対側の第２の面には、導体のベタパターンである地導体６が形成されている。 The signal conductor 4a is provided on the first surface of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and one end thereof is a connection point between the signal conductor 3a and the signal conductor 3b. It is a third signal conductor connected to. As shown in FIGS. 10B and 10C, the signal conductor 4b is provided in the inner layer of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and is at least equal to the signal conductor 4a in terms of plan. It is a fourth signal conductor arranged parallel to the plane including the signal conductor 4a so as to partially overlap. A ground conductor 6, which is a solid pattern of a conductor, is formed on a second surface of the dielectric substrate 5 opposite to the first surface.

接続導体７ｂは、誘電体基板５の内層に設けられ、信号導体４ｂの他方の端部を信号導体４ａおよび地導体６に接続する第２の接続導体である。接続導体７ｃは、誘電体基板５の内層に設けられ、接続導体７ｃは、信号導体４ａの一方の端部を、信号導体３ａと信号導体３ｂとの接続点、信号導体４ｂおよび電極１４に接続する第１の接続導体である。結合導体８は、動作周波数の波長の４分の１の長さを有した信号導体４ａおよび信号導体４ｂが電気的に結合したものである。 The connecting conductor 7b is a second connecting conductor provided in the inner layer of the dielectric substrate 5 and connecting the other end of the signal conductor 4b to the signal conductor 4a and the ground conductor 6. The connecting conductor 7c is provided in the inner layer of the dielectric substrate 5, and the connecting conductor 7c connects one end of the signal conductor 4a to the connection point between the signal conductor 3a and the signal conductor 3b, the signal conductor 4b and the electrode 14. It is the first connecting conductor to be used. The coupling conductor 8 is an electrically coupled signal conductor 4a and a signal conductor 4b having a length of one-fourth of the wavelength of the operating frequency.

放熱構造１Ｂは、実施の形態１に係る放熱構造１と同様に、入力端子２ａに接続される電力増幅器に発生した熱を、結合導体８を介して地導体６に放熱するものである。また、放熱構造１は、図１Ｂに示したように、誘電体基板５における信号導体４ａが設けられた第１の面から信号導体４ｂが設けられた内層を接続する接続導体７ａと、誘電体基板５を貫通して配置された接続導体７ｂとの２種類の接続導体を有する。 Similar to the heat dissipation structure 1 according to the first embodiment, the heat dissipation structure 1B dissipates heat generated in the power amplifier connected to the input terminal 2a to the ground conductor 6 via the coupling conductor 8. Further, as shown in FIG. 1B, the heat dissipation structure 1 includes a connecting conductor 7a connecting the inner layer provided with the signal conductor 4b from the first surface of the dielectric substrate 5 provided with the signal conductor 4a, and the dielectric. It has two types of connecting conductors with a connecting conductor 7b arranged so as to penetrate the substrate 5.

放熱構造１は、誘電体基板５を貫通する接続導体だけでなく、誘電体基板５の内層で止まる接続導体を有するので、これらの接続導体を設けるためには別々にヴィアホール加工を行う必要があり、工数が増加する。これに対して、放熱構造１Ｂが備える接続導体７ｂおよび７ｃは、誘電体基板５を貫通する接続導体のみが用いられ、これらの接続導体は、一度のヴィアホール加工で得られる。これにより、放熱構造１Ｂは、製造工数を削減可能である。 Since the heat dissipation structure 1 has not only a connecting conductor penetrating the dielectric substrate 5 but also a connecting conductor that stops at the inner layer of the dielectric substrate 5, it is necessary to separately perform viahole processing in order to provide these connecting conductors. Yes, the man-hours will increase. On the other hand, as the connection conductors 7b and 7c included in the heat dissipation structure 1B, only the connection conductors penetrating the dielectric substrate 5 are used, and these connection conductors can be obtained by one via hole processing. As a result, the heat dissipation structure 1B can reduce the manufacturing man-hours.

以上のように、実施の形態２に係る放熱構造１Ｂは、誘電体基板５の第２の面に設けられ、地導体６の一部が除去されて形成された電極１４を備える。接続導体７ｃは、信号導体４ｂの一方の端部を、信号導体３ａと信号導体３ｂとの接続点と電極１４に接続する。接続導体７ｃおよび電極１４の大きさは、動作周波数の波長に比べて十分に小さく、接続導体７ｃおよび電極１４からの影響は無視できる。従って、放熱構造１Ｂは、放熱構造１に比べて動作帯域幅および放熱性能を同等としつつ、簡易な製造方法によって製造することができる。これにより、製造コストも低減される。 As described above, the heat dissipation structure 1B according to the second embodiment includes an electrode 14 provided on the second surface of the dielectric substrate 5 and formed by removing a part of the ground conductor 6. The connecting conductor 7c connects one end of the signal conductor 4b to the connection point between the signal conductor 3a and the signal conductor 3b and the electrode 14. The sizes of the connecting conductor 7c and the electrode 14 are sufficiently small compared to the wavelength of the operating frequency, and the influence from the connecting conductor 7c and the electrode 14 can be ignored. Therefore, the heat dissipation structure 1B can be manufactured by a simple manufacturing method while having the same operating bandwidth and heat dissipation performance as those of the heat dissipation structure 1. This also reduces manufacturing costs.

実施の形態３．
図１１Ａは、実施の形態３に係る放熱構造１Ｃを示す斜視図である。図１１Ｂは、放熱構造１Ｃを、図１１ＡのＡ－Ａ’線で切断した断面を示す断面図である。図１１Ｃは、放熱構造１Ｃを、図１１ＡのＢ－Ｂ’線で切断した断面を示す断面図である。図１１Ａ、図１１Ｂおよび図１１Ｃにおいて、放熱構造１Ｃは、例えば、高周波信号が入出力される高周波回路であり、入力端子２ａ、出力端子２ｂ、信号導体３ａ、信号導体３ｂ、信号導体４ｃ、信号導体４ｄ、誘電体基板５、地導体６、接続導体７ａ、接続導体７ｂ、接続導体７ｄ、電極１４ａ、電極１４ｂおよびチップコンデンサ１５を備える。Embodiment 3.
FIG. 11A is a perspective view showing the heat dissipation structure 1C according to the third embodiment. FIG. 11B is a cross-sectional view showing a cross section of the heat dissipation structure 1C cut along the line AA'of FIG. 11A. FIG. 11C is a cross-sectional view showing a cross section of the heat dissipation structure 1C cut along the line BB'of FIG. 11A. In FIGS. 11A, 11B and 11C, the heat dissipation structure 1C is, for example, a high frequency circuit into which a high frequency signal is input / output, and is an input terminal 2a, an output terminal 2b, a signal conductor 3a, a signal conductor 3b, a signal conductor 4c, and a signal. It includes a conductor 4d, a dielectric substrate 5, a ground conductor 6, a connecting conductor 7a, a connecting conductor 7b, a connecting conductor 7d, an electrode 14a, an electrode 14b, and a chip capacitor 15.

信号導体３ａは、誘電体基板５の第１の面（＋ｚ方向の面）に設けられ、一方の端部が入力端子２ａに接続され、他方の端部が信号導体３ｂの端部に接続された第１の信号導体である。信号導体３ｂは、誘電体基板５の第１の面に設けられ、一方の端部が出力端子２ｂに接続され、他方の端部が信号導体３ａにおける入力端子２ａとは反対側の端部に接続された第２の信号導体である。 The signal conductor 3a is provided on the first surface (plane in the + z direction) of the dielectric substrate 5, one end is connected to the input terminal 2a, and the other end is connected to the end of the signal conductor 3b. It is the first signal conductor. The signal conductor 3b is provided on the first surface of the dielectric substrate 5, one end is connected to the output terminal 2b, and the other end is at the end of the signal conductor 3a opposite to the input terminal 2a. It is a connected second signal conductor.

信号導体４ｃは、誘電体基板５の第１の面に設けられ、動作周波数の波長の４分の１の長さを有し、一方の端部が信号導体３ａと信号導体３ｂとの接続点に接続された第３の信号導体である。信号導体４ｄは、図１１Ｂおよび図１１Ｃに示すように、誘電体基板５の内層に設けられ、動作周波数の波長の４分の１の長さを有し、平面的にみて信号導体４ｃと少なくとも一部が重なるように、信号導体４ｃを含む平面と平行に配置された、第４の信号導体である。誘電体基板５における第１の面とは反対側の第２の面（－ｚ方向の面）には、導体のベタパターンである地導体６が形成されている。 The signal conductor 4c is provided on the first surface of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and one end thereof is a connection point between the signal conductor 3a and the signal conductor 3b. It is a third signal conductor connected to. As shown in FIGS. 11B and 11C, the signal conductor 4d is provided in the inner layer of the dielectric substrate 5, has a length of one-fourth of the wavelength of the operating frequency, and is at least the signal conductor 4c in terms of plan. It is a fourth signal conductor arranged parallel to the plane including the signal conductor 4c so as to partially overlap. A ground conductor 6, which is a solid pattern of a conductor, is formed on a second surface (a surface in the −z direction) opposite to the first surface of the dielectric substrate 5.

電極１４ａは、誘電体基板５の第１の面に設けられ、信号導体３ａと信号導体３ｂとの接続点に接続された第１の電極である。電極１４ｂは、誘電体基板５の第１の面に設けられ、接続導体７ｄによって地導体６と接続された第２の電極である。チップコンデンサ１５は、電極１４ａと電極１４ｂとの間を接続するコンデンサである。 The electrode 14a is a first electrode provided on the first surface of the dielectric substrate 5 and connected to a connection point between the signal conductor 3a and the signal conductor 3b. The electrode 14b is a second electrode provided on the first surface of the dielectric substrate 5 and connected to the ground conductor 6 by the connecting conductor 7d. The chip capacitor 15 is a capacitor that connects between the electrode 14a and the electrode 14b.

接続導体７ａは、信号導体４ｃの一方の端部を、信号導体３ａと信号導体３ｂとの接続点および信号導体４ｄに接続する第１の接続導体である。接続導体７ｂは、信号導体４ｃの他方の端部を、信号導体４ｃおよび地導体６に接続する第２の接続導体である。接続導体７ｄは、誘電体基板５の内層に設けられて、電極１４ｂを地導体６に接続する第３の接続導体である。 The connecting conductor 7a is a first connecting conductor that connects one end of the signal conductor 4c to the connection point between the signal conductor 3a and the signal conductor 3b and the signal conductor 4d. The connecting conductor 7b is a second connecting conductor that connects the other end of the signal conductor 4c to the signal conductor 4c and the ground conductor 6. The connecting conductor 7d is a third connecting conductor provided in the inner layer of the dielectric substrate 5 and connecting the electrode 14b to the ground conductor 6.

結合導体１６は、動作周波数の波長の４分の１の長さを有した信号導体４ｃおよび信号導体４ｄが電気的に結合したものである。信号導体４ｃと信号導体４ｄとの間の厚み方向（ｚ方向）の間隔ｄは、例えば、誘電体基板５の厚さの１０分の１以下である。信号導体３ａ、信号導体３ｂ、信号導体４ｃおよび信号導体４ｄは、地導体６と合わせて高周波信号を伝送する伝送線路として機能する。 The coupling conductor 16 is an electrically coupled signal conductor 4c and a signal conductor 4d having a length of one-fourth of the wavelength of the operating frequency. The distance d in the thickness direction (z direction) between the signal conductor 4c and the signal conductor 4d is, for example, one tenth or less of the thickness of the dielectric substrate 5. The signal conductor 3a, the signal conductor 3b, the signal conductor 4c, and the signal conductor 4d function together with the ground conductor 6 as a transmission line for transmitting a high frequency signal.

放熱構造１は、高周波特性に影響を与えぬように、動作周波数における、入力インピーダンスＺｉｎ＝∞となるように、物理長ｌを決定していた。このため、信号導体４ａおよび信号導体４ｂの長さは、動作周波数によって制限される。上記式（６）に示すように、信号導体４ａおよび信号導体４ｂの熱抵抗は、信号導体の長さｌに比例する。信号導体の熱抵抗は、信号導体の長さｌを短くすることで、小さくすることができる。In the heat dissipation structure 1, the physical length l was determined so that the input impedance Z in = ∞ at the operating frequency so as not to affect the high frequency characteristics. Therefore, the lengths of the signal conductor 4a and the signal conductor 4b are limited by the operating frequency. As shown in the above equation (6), the thermal resistance of the signal conductor 4a and the signal conductor 4b is proportional to the length l of the signal conductor. The thermal resistance of the signal conductor can be reduced by shortening the length l of the signal conductor.

しかしながら、熱抵抗を低減するためには、放熱構造１において、信号導体４ａおよび信号導体４ｂの長さ以外のパラメータを設計しなくてはならない。これに対し、放熱構造１Ｃは、結合導体１６と並列にチップコンデンサ１５が接続され、チップコンデンサ１５によって結合導体１６の長さを、動作周波数の波長の１／４波長以下とすることができるので、熱抵抗を低減することが可能となる。 However, in order to reduce the thermal resistance, it is necessary to design parameters other than the lengths of the signal conductor 4a and the signal conductor 4b in the heat dissipation structure 1. On the other hand, in the heat dissipation structure 1C, the chip capacitor 15 is connected in parallel with the coupling conductor 16, and the length of the coupling conductor 16 can be set to 1/4 or less of the wavelength of the operating frequency by the chip capacitor 15. , It is possible to reduce the thermal resistance.

図１２は、実施の形態３に係る放熱構造１Ｃの等価回路を示す回路図であり、放熱構造１Ｃの電気的な動作を表す等価回路である。図１２に示す等価回路は、高周波信号が入力される入力端子２ａ、高周波信号が出力される出力端子２ｂ、給電線路９ａ、給電線路９ｂ、伝送線路１０ｃおよび伝送線路１０ｄによって構成される。伝送線路１０ｃおよび伝送線路１０ｄは、動作周波数の波長の４分の１の長さを有している。 FIG. 12 is a circuit diagram showing an equivalent circuit of the heat dissipation structure 1C according to the third embodiment, and is an equivalent circuit showing the electrical operation of the heat dissipation structure 1C. The equivalent circuit shown in FIG. 12 is composed of an input terminal 2a for inputting a high frequency signal, an output terminal 2b for outputting a high frequency signal, a feeding line 9a, a feeding line 9b, a transmission line 10c, and a transmission line 10d. The transmission line 10c and the transmission line 10d have a length of one-fourth of the wavelength of the operating frequency.

給電線路９ａは、一方の端部が入力端子２ａに接続され、他方の端部が給電線路９ｂの端部に接続されている。給電線路９ｂは、一方の端部が出力端子２ｂに接続され、他方の端部が、給電線路９ａにおける入力端子２ａとは反対側の端部に接続されている。図１１に示したチップコンデンサ１５のキャパシタが、図１２に示すキャパシタである。以降、キャパシタ１５と記載する。キャパシタ１５は、一方の端部が給電線路９ａと給電線路９ｂとの接続点に接続され、もう一方は接地されている。 One end of the feeding line 9a is connected to the input terminal 2a, and the other end is connected to the end of the feeding line 9b. One end of the feeding line 9b is connected to the output terminal 2b, and the other end is connected to the end of the feeding line 9a opposite to the input terminal 2a. The capacitor of the chip capacitor 15 shown in FIG. 11 is the capacitor shown in FIG. Hereinafter, it will be referred to as a capacitor 15. One end of the capacitor 15 is connected to the connection point between the feeding line 9a and the feeding line 9b, and the other is grounded.

結合導体１６は、動作周波数の波長の４分の１の長さを有した伝送線路１０ｃと伝送線路１０ｄとが電気的に結合されて構成され、先端短絡１／４波長スタブとして機能する。伝送線路１０ｃおよび伝送線路１０ｄの端部のうち、同じ側にある端部は、互いに接続される。伝送線路１０ｃおよび伝送線路１０ｄにおける、互いに接続された端部の一方は、給電線路９ａと給電線路９ｂとの接続点に接続され、もう一方は接地される。 The coupling conductor 16 is configured by electrically coupling a transmission line 10c having a length of one-fourth of the wavelength of the operating frequency and a transmission line 10d, and functions as a tip short-circuit 1/4 wavelength stub. Of the ends of the transmission line 10c and the transmission line 10d, the ends on the same side are connected to each other. One of the end portions of the transmission line 10c and the transmission line 10d connected to each other is connected to the connection point between the power supply line 9a and the power supply line 9b, and the other is grounded.

図１１に示した信号導体３ａおよび信号導体３ｂは、地導体６と合わせて、高周波信号を伝送する伝送線路として機能する。図１２においては、給電線路９ａが信号導体３ａに対応し、給電線路９ｂが信号導体３ｂに対応する。伝送線路１０ｃは、図１１に示した信号導体４ｃに対応し、伝送線路１０ｄは、信号導体４ｄに対応する。 The signal conductor 3a and the signal conductor 3b shown in FIG. 11 together with the ground conductor 6 function as a transmission line for transmitting a high frequency signal. In FIG. 12, the feeding line 9a corresponds to the signal conductor 3a, and the feeding line 9b corresponds to the signal conductor 3b. The transmission line 10c corresponds to the signal conductor 4c shown in FIG. 11, and the transmission line 10d corresponds to the signal conductor 4d.

図１２に示すように、キャパシタ１５は、結合導体１６である先端短絡１／４波長スタブと並列に装荷されている。先端短絡１／４波長スタブは、動作周波数付近で、ＬＣ並列共振回路として動作する。先端短絡１／４波長スタブに対してキャパシタ１５を並列に装荷することによって、共振周波数が低域側にシフトする。これにより、放熱構造１Ｃは、同一の周波数で動作させた場合であっても、信号導体４ａおよび信号導体４ｂの長さを、動作周波数の波長の４分の１の長さよりも短くできるので、さらなる熱抵抗の低減が可能となる。 As shown in FIG. 12, the capacitor 15 is loaded in parallel with the tip short-circuit 1/4 wavelength stub which is the coupling conductor 16. The tip short circuit 1/4 wavelength stub operates as an LC parallel resonant circuit near the operating frequency. By loading the capacitor 15 in parallel with the tip short-circuit 1/4 wavelength stub, the resonance frequency shifts to the low frequency side. As a result, the heat dissipation structure 1C can make the lengths of the signal conductor 4a and the signal conductor 4b shorter than the length of one-fourth of the wavelength of the operating frequency even when the signal conductor 4a and the signal conductor 4b are operated at the same frequency. Further reduction of thermal resistance is possible.

図１３は、実施の形態１に係る放熱構造１と実施の形態３に係る放熱構造１Ｃにおける反射振幅の電磁界解析結果を示すグラフであり、図２に示した放熱構造１の等価回路の反射振幅の計算結果Ｅと図１２に示した放熱構造１Ｃの等価回路の反射振幅の計算結果Ｆを示している。図１３において、横軸はθ＝π／２（ｒａｄ）となる周波数で規格化された周波数であり、縦軸は反射振幅を表している。図１３に示す反射振幅の計算結果においては、放熱構造１と放熱構造１Ｃの両方で、偶モードの特性インピーダンスＺＯｅを１００Ωとし、キャパシタ１５は、Ｃ＝３．２ｐＦとしている。FIG. 13 is a graph showing the electromagnetic field analysis results of the reflection amplitudes in the heat dissipation structure 1 according to the first embodiment and the heat dissipation structure 1C according to the third embodiment, and is a graph showing the reflection of the equivalent circuit of the heat dissipation structure 1 shown in FIG. The amplitude calculation result E and the reflection amplitude calculation result F of the equivalent circuit of the heat dissipation structure 1C shown in FIG. 12 are shown. In FIG. 13, the horizontal axis is a frequency normalized by a frequency of θ = π / 2 (rad), and the vertical axis represents the reflection amplitude. In the calculation result of the reflection amplitude shown in FIG. 13, in both the heat dissipation structure 1 and the heat dissipation structure 1C, the characteristic impedance Z Oe of the even mode is set to 100Ω, and the capacitor 15 is set to C = 3.2pF.

図１３から明らかなように、図１２に示した放熱構造１Ｃの等価回路の反射振幅の計算結果Ｆと、図４に示した放熱構造１００の等価回路の反射振幅の計算結果Ｅでは、ともに規格化周波数が１．０付近で、反射振幅が極小になっている。このとき、図２に示した放熱構造１の等価回路では、規格化周波数が１．０において、θｅ＝π／２ｒａｄ．であるのに対し、図１２に示した等価回路では、θｅ＝π／４ｒａｄ．である。信号導体の電気長θｅと長さｌは、上記式（１０）に示すように比例関係であり、θｅが１／２となれば、長さｌも１／２となる。従って、放熱構造１Ｃにおいて、信号導体４ｃおよび信号導体４ｄの合成熱抵抗は、図１で示した放熱構造１における合成熱抵抗の半分となり、より放熱性が改善される。なお、実施の形態３に係る放熱構造１Ｃは、高周波回路として動作を述べる際に、キャパシタンスおよび電気長といった実際の数値を例に示したが、これは一例である。As is clear from FIG. 13, both the calculation result F of the reflection amplitude of the equivalent circuit of the heat dissipation structure 1C shown in FIG. 12 and the calculation result E of the reflection amplitude of the equivalent circuit of the heat dissipation structure 100 shown in FIG. 4 are standards. The conversion frequency is around 1.0, and the reflection amplitude is minimized. At this time, in the equivalent circuit of the heat dissipation structure 1 shown in FIG. 2, when the normalized frequency is 1.0, θ e = π / 2 rad. On the other hand, in the equivalent circuit shown in FIG. 12, θ e = π / 4rad. Is. The electrical length θe and the length l of the signal conductor are in a proportional relationship as shown in the above equation (10), and if θ e becomes 1/2, the length l also becomes 1/2. Therefore, in the heat dissipation structure 1C, the combined thermal resistance of the signal conductor 4c and the signal conductor 4d is half of the combined thermal resistance in the heat dissipation structure 1 shown in FIG. 1, and the heat dissipation is further improved. The heat dissipation structure 1C according to the third embodiment shows actual numerical values such as capacitance and electric length as an example when describing the operation as a high frequency circuit, but this is an example.

以上のように、実施の形態３に係る放熱構造１Ｃは、誘電体基板５の第１の面に設けられ、信号導体３ａと信号導体３ｂとの接続点に接続された電極１４ａと、誘電体基板５の第１の面に設けられた電極１４ｂと、誘電体基板５の第１の面に設けられ、電極１４ａと電極１４ｂとの間を接続するチップコンデンサ１５と、誘電体基板５の内層に設けられ、１４ｂ電極を地導体６に接続する接続導体７ｄを備える。放熱構造１Ｃは、信号導体４ｃおよび信号導体４ｄの合成熱抵抗が、図１で示した放熱構造１における合成熱抵抗の半分となるので、より放熱性が改善される。 As described above, the heat dissipation structure 1C according to the third embodiment is provided on the first surface of the dielectric substrate 5, and has an electrode 14a connected to a connection point between the signal conductor 3a and the signal conductor 3b, and a dielectric material. An electrode 14b provided on the first surface of the substrate 5, a chip capacitor 15 provided on the first surface of the dielectric substrate 5 and connecting between the electrodes 14a and 14b, and an inner layer of the dielectric substrate 5. It is provided with a connecting conductor 7d for connecting the 14b electrode to the ground conductor 6. In the heat dissipation structure 1C, the combined thermal resistance of the signal conductor 4c and the signal conductor 4d is half the combined thermal resistance in the heat dissipation structure 1 shown in FIG. 1, so that the heat dissipation is further improved.

実施の形態１～３に示した放熱構造１，１Ａ～１Ｃは、高周波回路に利用可能である。
図１４は、実施の形態１～３に係る放熱構造１，１Ａ～１Ｃの少なくとも一つを含む高周波回路１９の一例を示すブロック図である。高周波回路１９は、少なくとも一つ以上の高周波信号を入力するための入力端子１７ａと、高周波信号を出力するための出力端子１７ｂと、放熱構造１，１Ａ～１Ｃのうちの少なくとも一つと、第一および第二の高周波デバイス１８ａ，１８ｂを備える。第一の高周波デバイス１８ａは、少なくとも一つ以上の電力増幅器を備える。The heat dissipation structures 1, 1A to 1C shown in the first to third embodiments can be used in a high frequency circuit.
FIG. 14 is a block diagram showing an example of a high frequency circuit 19 including at least one of the heat dissipation structures 1, 1A to 1C according to the first to third embodiments. The high frequency circuit 19 includes an input terminal 17a for inputting at least one or more high frequency signals, an output terminal 17b for outputting a high frequency signal, at least one of the heat dissipation structures 1, 1A to 1C, and the first. And a second high frequency device 18a, 18b. The first high frequency device 18a comprises at least one power amplifier.

放熱構造１，１Ａ～１Ｃの入力端子２ａには、第一の高周波デバイス１８ａの出力端子が接続され、放熱構造１，１Ａ～１Ｃの出力端子２ｂには、第二の高周波デバイス１８ｂの入力端子が接続される。第一の高周波デバイス１８ａの入力端子および第二の高周波デバイス１８ｂの出力端子は、それぞれ、高周波回路１９における入力端子１７ａおよび出力端子１７ｂとなる。高周波回路１９は、入力端子１７ａへ入力された高周波信号を変換し、出力端子１７ｂから出力する機能を有する。なお、「変換」とは、高周波信号の振幅を増幅あるいは減衰させる、位相を調整する、または、周波数を変換する、といった機能である。 The output terminal of the first high frequency device 18a is connected to the input terminal 2a of the heat dissipation structures 1, 1A to 1C, and the input terminal of the second high frequency device 18b is connected to the output terminal 2b of the heat dissipation structures 1, 1A to 1C. Is connected. The input terminal of the first high frequency device 18a and the output terminal of the second high frequency device 18b are the input terminal 17a and the output terminal 17b in the high frequency circuit 19, respectively. The high frequency circuit 19 has a function of converting a high frequency signal input to the input terminal 17a and outputting it from the output terminal 17b. The "conversion" is a function of amplifying or attenuating the amplitude of a high-frequency signal, adjusting the phase, or converting the frequency.

高周波信号の変換に伴って第一の高周波デバイス１８ａが発熱し、この熱は、第一の高周波デバイス１８ａの出力端子から入力端子２ａを介して放熱構造１，１Ａ～１Ｃへ伝わり、放熱される。この放熱において、第一および第二の高周波デバイス１８ａ，１８ｂの動作帯域幅が、放熱構造１，１Ａ～１Ｃの動作帯域幅と比較して狭帯域であれば、高周波回路１９の動作帯域幅を狭帯域化することなく、第一の高周波デバイス１８ａからの熱を効率よく放熱できる。これにより、第一の高周波デバイス１８ａで生じた熱が、第二の高周波デバイス１８ｂへ伝熱することを抑圧できる。従って、第二の高周波デバイス１８ｂの温度変化による電気特性の変動、回路の誤動作が防止される。 The first high frequency device 18a generates heat with the conversion of the high frequency signal, and this heat is transferred from the output terminal of the first high frequency device 18a to the heat dissipation structures 1, 1A to 1C via the input terminal 2a and is dissipated. .. In this heat dissipation, if the operating bandwidths of the first and second high frequency devices 18a and 18b are narrower than the operating bandwidths of the heat dissipation structures 1, 1A to 1C, the operating bandwidth of the high frequency circuit 19 is set. The heat from the first high frequency device 18a can be efficiently dissipated without narrowing the band. As a result, it is possible to suppress the heat generated by the first high frequency device 18a from being transferred to the second high frequency device 18b. Therefore, fluctuations in electrical characteristics and circuit malfunction due to temperature changes in the second high-frequency device 18b are prevented.

また、実施の形態１～３に示した放熱構造１，１Ａ～１Ｃは、アンテナ装置に利用可能である。図１５は、実施の形態１～３に係る放熱構造１，１，１Ａ～１Ｃの少なくとも一つを含むアンテナ装置２０の一例を示すブロック図である。アンテナ装置２０は、高周波信号を入力するための入力端子１７ａと、放熱構造１，１Ａ～１Ｃのうちの少なくとも一つと、第一の高周波デバイス１８ａを備える。第一の高周波デバイス１８ａは、少なくとも一つ以上の電力増幅器を備える。 Further, the heat dissipation structures 1, 1A to 1C shown in the first to third embodiments can be used for the antenna device. FIG. 15 is a block diagram showing an example of an antenna device 20 including at least one of the heat dissipation structures 1, 1, 1A to 1C according to the first to third embodiments. The antenna device 20 includes an input terminal 17a for inputting a high frequency signal, at least one of the heat dissipation structures 1, 1A to 1C, and a first high frequency device 18a. The first high frequency device 18a comprises at least one power amplifier.

放熱構造１，１Ａ～１Ｃの入力端子２ａには、第一の高周波デバイス１８ａの出力端子が接続され、放熱構造１，１Ａ～１Ｃの出力端子２ｂには、アンテナ２１が接続される。第一の高周波デバイス１８ａの入力端子は、アンテナ装置２０における入力端子１７ａとなる。アンテナ装置２０は、入力端子１７ａへ入力された高周波信号を変換し、アンテナ２１から放射する機能を有している。なお、「変換」とは、高周波信号の振幅を増幅あるいは減衰させる、位相を調整する、または、周波数を変換する、といった機能である。 The output terminal of the first high frequency device 18a is connected to the input terminals 2a of the heat dissipation structures 1, 1A to 1C, and the antenna 21 is connected to the output terminals 2b of the heat dissipation structures 1, 1A to 1C. The input terminal of the first high frequency device 18a is the input terminal 17a in the antenna device 20. The antenna device 20 has a function of converting a high frequency signal input to the input terminal 17a and radiating it from the antenna 21. The "conversion" is a function of amplifying or attenuating the amplitude of a high-frequency signal, adjusting the phase, or converting the frequency.

高周波信号の変換に伴って第一の高周波デバイス１８ａが発熱し、この熱は、第一の高周波デバイス１８ａの出力端子から入力端子２ａを介して放熱構造１，１Ａ～１Ｃへ伝わり、放熱される。この放熱において、第一の高周波デバイス１８ａおよびアンテナ２１の動作帯域幅が、放熱構造１，１Ａ～１Ｃの動作帯域幅と比較して狭帯域であれば、アンテナ装置２０の動作帯域幅を狭帯域化することなく、第一の高周波デバイス１８ａからの熱を効率よく放熱できる。これにより、第一の高周波デバイス１８ａで生じた熱が、アンテナ２１へ伝熱することを抑圧できる。従って、アンテナ２１の温度変化による歪み、あるいは、アンテナ２１の歪みに伴う電気特性の変動が防止される。 The first high frequency device 18a generates heat with the conversion of the high frequency signal, and this heat is transferred from the output terminal of the first high frequency device 18a to the heat dissipation structures 1, 1A to 1C via the input terminal 2a and is dissipated. .. In this heat dissipation, if the operating bandwidth of the first high frequency device 18a and the antenna 21 is narrower than the operating bandwidth of the heat dissipation structures 1, 1A to 1C, the operating bandwidth of the antenna device 20 is narrowed. The heat from the first high-frequency device 18a can be efficiently dissipated without the change. As a result, it is possible to suppress the heat generated by the first high frequency device 18a from being transferred to the antenna 21. Therefore, distortion due to the temperature change of the antenna 21 or fluctuation of the electrical characteristics due to the distortion of the antenna 21 is prevented.

なお、各実施の形態の組み合わせまたは実施の形態のそれぞれの任意の構成要素の変形もしくは実施の形態のそれぞれにおいて任意の構成要素の省略が可能である。 It should be noted that the combination of each embodiment, the modification of each arbitrary component of the embodiment, or the omission of any component in each of the embodiments is possible.

本開示に係る放熱構造は、例えば、レーダ装置が備える高周波回路に利用可能である。 The heat dissipation structure according to the present disclosure can be used, for example, in a high frequency circuit included in a radar device.

１，１Ａ～１Ｃ 放熱構造、２ａ 入力端子、２ｂ 出力端子、３ａ，３ｂ，４ａ～４ｄ 信号導体、５ 誘電体基板、６ 地導体、７ａ～７ｄ 接続導体、８ 結合導体、９ａ，９ｂ 給電線路、１０ａ～１０ｄ 伝送線路、１１ 結合線路、１２ 伝熱部材、１３ 金属体、１４，１４ａ，１４ｂ 電極、１５ チップコンデンサ、１６ 結合導体、１００ 放熱構造、１０１ａ 入力端子、１０１ｂ 出力端子、１０２ａ，１０２ｂ，１０３ａ 信号導体、１０４ 誘電体基板、１０５ 地導体、１０６ 接続導体、１０７ａ，１０７ｂ 給電線路、１０８ａ 伝送線路、１７ａ 入力端子、１７ｂ 出力端子、１８ａ 第一の高周波デバイス、１８ｂ 第二の高周波デバイス、１９ 高周波回路、２０ アンテナ装置、２１ アンテナ。 1,1A to 1C heat dissipation structure, 2a input terminal, 2b output terminal, 3a, 3b, 4a to 4d signal conductor, 5 dielectric substrate, 6 ground conductor, 7a to 7d connection conductor, 8 coupling conductor, 9a, 9b power supply line 10a-10d transmission line, 11 coupling line, 12 heat transfer member, 13 metal body, 14, 14a, 14b electrode, 15 chip capacitor, 16 coupling conductor, 100 heat dissipation structure, 101a input terminal, 101b output terminal, 102a, 102b , 103a signal conductor, 104 dielectric substrate, 105 ground conductor, 106 connection conductor, 107a, 107b power supply line, 108a transmission line, 17a input terminal, 17b output terminal, 18a first high frequency device, 18b second high frequency device, 19 high frequency circuit, 20 antenna device, 21 antenna.

Claims (8)

第１の面と、前記第１の面とは反対側の第２の面を有し、前記第２の面に地導体が設けられた誘電体基板と、
前記誘電体基板の前記第１の面に設けられ、高周波信号の入力端子に一方の端部が接続された第１の信号導体と、
前記誘電体基板の前記第１の面に設けられ、高周波信号の出力端子に一方の端部が接続され、前記第１の信号導体における前記入力端子とは反対側の端部に他方の端部が接続された第２の信号導体と、
前記誘電体基板の前記第１の面に設けられ、動作周波数の波長の４分の１の長さを有した第３の信号導体と、
前記誘電体基板の内層に設けられて、前記動作周波数の波長の４分の１の長さを有した第４の信号導体と、
前記第４の信号導体の一方の端部を、前記第１の信号導体と前記第２の信号導体との接続点に接続する第１の接続導体と、
前記第４の信号導体の他方の端部を、前記第３の信号導体および前記地導体に接続する第２の接続導体と、を備え、
前記第３の信号導体は、前記第１の信号導体と前記第２の信号導体との接続点に接続され、
前記第４の信号導体は、平面的にみて、前記第３の信号導体と少なくとも一部が重なるように、前記第３の信号導体を含む平面と平行に配置されていること
を特徴とする放熱構造。A dielectric substrate having a first surface and a second surface opposite to the first surface and having a ground conductor provided on the second surface.
A first signal conductor provided on the first surface of the dielectric substrate and having one end connected to an input terminal for a high frequency signal.
One end is connected to the output terminal of a high frequency signal provided on the first surface of the dielectric substrate, and the other end is connected to the end of the first signal conductor opposite to the input terminal. With the second signal conductor to which
A third signal conductor provided on the first surface of the dielectric substrate and having a length of one-fourth of the wavelength of the operating frequency,
A fourth signal conductor provided on the inner layer of the dielectric substrate and having a length of one-fourth of the wavelength of the operating frequency,
A first connecting conductor that connects one end of the fourth signal conductor to a connection point between the first signal conductor and the second signal conductor.
The other end of the fourth signal conductor comprises the third signal conductor and a second connecting conductor connecting the ground conductor.
The third signal conductor is connected to a connection point between the first signal conductor and the second signal conductor.
The fourth signal conductor is arranged in parallel with the plane including the third signal conductor so as to overlap at least a part of the third signal conductor when viewed in a plane. Construction. 金属体と、
前記地導体を前記金属体に接続する伝熱部材と、
を備えたことを特徴とする請求項１記載の放熱構造。With a metal body,
A heat transfer member that connects the ground conductor to the metal body,
The heat dissipation structure according to claim 1, wherein the heat dissipation structure is provided. 前記誘電体基板の前記第２の面に設けられ、前記地導体の一部が除去されて形成された電極を備え、
前記第１の接続導体は、前記第４の信号導体の一方の端部を、前記第１の信号導体と前記第２の信号導体との接続点および前記電極に接続すること
を特徴とする請求項１記載の放熱構造。A electrode provided on the second surface of the dielectric substrate and formed by removing a part of the ground conductor is provided.
The first connecting conductor is characterized in that one end of the fourth signal conductor is connected to a connection point between the first signal conductor and the second signal conductor and the electrode. Item 1. The heat dissipation structure according to item 1. 前記誘電体基板の前記第１の面に設けられ、前記第１の信号導体と前記第２の信号導体との接続点に接続された第１の電極と、
前記誘電体基板の前記第１の面に設けられた第２の電極と、
前記誘電体基板の前記第１の面に設けられ、前記第１の電極と前記第２の電極との間を接続するコンデンサと、
前記誘電体基板の内層に設けられ、前記第２の電極を前記地導体に接続する第３の接続導体と、
を備えたことを特徴とする請求項１記載の放熱構造。A first electrode provided on the first surface of the dielectric substrate and connected to a connection point between the first signal conductor and the second signal conductor.
A second electrode provided on the first surface of the dielectric substrate, and
A capacitor provided on the first surface of the dielectric substrate and connecting between the first electrode and the second electrode,
A third connecting conductor provided on the inner layer of the dielectric substrate and connecting the second electrode to the ground conductor,
The heat dissipation structure according to claim 1, wherein the heat dissipation structure is provided. 前記第３の信号導体と前記第４の信号導体との間隔は、前記誘電体基板の厚さの１０分の１以下であること
を特徴とする請求項１記載の放熱構造。The heat dissipation structure according to claim 1, wherein the distance between the third signal conductor and the fourth signal conductor is 1/10 or less of the thickness of the dielectric substrate. 前記第３の信号導体と前記第４の信号導体は、同一の線路幅であること
を特徴とする請求項１記載の放熱構造。The heat dissipation structure according to claim 1, wherein the third signal conductor and the fourth signal conductor have the same line width. 請求項１から請求項６のいずれか１項記載の放熱構造と、
前記入力端子に接続された一つ以上の電力増幅器と、
を備えたことを特徴とする高周波回路。The heat dissipation structure according to any one of claims 1 to 6,
With one or more power amplifiers connected to the input terminals,
A high-frequency circuit characterized by being equipped with. 請求項１から請求項６のいずれか１項記載の放熱構造と、
前記入力端子に接続された一つ以上の電力増幅器を含む高周波回路と、
前記出力端子に接続されたアンテナと、
を備えたことを特徴とするアンテナ装置。The heat dissipation structure according to any one of claims 1 to 6,
A high frequency circuit containing one or more power amplifiers connected to the input terminal, and
With the antenna connected to the output terminal,
An antenna device characterized by being equipped with.
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Citations (3)

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JP2011139244A (en) 2009-12-28 2011-07-14 Kyocera Corp High frequency module
WO2018122920A1 (en) 2016-12-26 2018-07-05 三菱電機株式会社 Terminal device
JP2019102886A (en) 2017-11-29 2019-06-24 キヤノン株式会社 Branch circuit

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JP2011139244A (en) 2009-12-28 2011-07-14 Kyocera Corp High frequency module
WO2018122920A1 (en) 2016-12-26 2018-07-05 三菱電機株式会社 Terminal device
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