JP7071616B2 - Light source device - Google Patents

Light source device Download PDF

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JP7071616B2
JP7071616B2 JP2017189530A JP2017189530A JP7071616B2 JP 7071616 B2 JP7071616 B2 JP 7071616B2 JP 2017189530 A JP2017189530 A JP 2017189530A JP 2017189530 A JP2017189530 A JP 2017189530A JP 7071616 B2 JP7071616 B2 JP 7071616B2
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light source
semiconductor laser
source device
substrate
translucent member
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JP2019067842A (en
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忠明 宮田
圭宏 木村
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Nichia Corp
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Nichia Corp
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Description

本発明は光源装置に関する。 The present invention relates to a light source device.

一方の面に凹部を有する第１の基板と、下面が凹部の底面にサブマウントを介して接するように搭載され、側面に光出射領域を有する端面発光型のレーザ素子と、第１の基板の一方の面上に設けられ、レーザ素子の上面に接合材を介して接している第２の基板と、第１の基板と第２の基板に挟持されている板状の波長変換体と、を有する発光装置が提案されている（特許文献１参照）。また、光取り出し口を有するパッケージと、このパッケージ内に配置される半導体レーザダイオードと、周囲がパッケージに密着し、かつレーザダイオードの光路上に配置された可視発光体とを備える半導体発光装置が提案されている（特許文献２参照）。 A first substrate having a recess on one surface, an end face emitting type laser element having a lower surface in contact with the bottom surface of the recess via a submount, and a light emitting region on the side surface, and a first substrate. A second substrate provided on one surface and in contact with the upper surface of the laser element via a bonding material, and a plate-shaped wavelength converter sandwiched between the first substrate and the second substrate. A light emitting device having a light emitting device has been proposed (see Patent Document 1). Further, a semiconductor light emitting device including a package having a light extraction port, a semiconductor laser diode arranged in the package, and a visible light emitting body having a peripheral contact with the package and arranged on the optical path of the laser diode is proposed. (See Patent Document 2).

特開２０１６－１６７４９２号公報Japanese Unexamined Patent Publication No. 2016-167492 特開２０１０－２２５９１７号公報Japanese Unexamined Patent Publication No. 2010-225917

しかしながら、特許文献１、２に記載の発光装置では、発光装置の側面から波長変換体や可視発光体が露出する。このため、波長変換体や可視発光体が空気中の水分により劣化してしまう虞がある。 However, in the light emitting device described in Patent Documents 1 and 2, the wavelength converter and the visible light emitting body are exposed from the side surface of the light emitting device. Therefore, the wavelength converter and the visible light emitter may be deteriorated by the moisture in the air.

上記の課題は、例えば、次の手段により解決することができる。 The above problem can be solved by, for example, the following means.

基体と、前記基体上に配置され、複数の貫通孔を備えた透光性部材と、前記複数の貫通孔の一つに配置される半導体レーザ素子と、前記複数の貫通孔のうち前記半導体レーザ素子が配置される貫通孔とは異なる貫通孔内に配置され、前記半導体レーザ素子からの光が照射されることにより蛍光を発する波長変換部材と、前記透光性部材上に配置され、前記複数の貫通孔のうち少なくとも前記半導体レーザ素子が配置される貫通孔と前記波長変換部材が配置される貫通孔とを気密封止する蓋体と、を有する光源装置。 A substrate, a translucent member arranged on the substrate and having a plurality of through holes, a semiconductor laser element arranged in one of the plurality of through holes, and the semiconductor laser among the plurality of through holes. A wavelength conversion member that is arranged in a through hole different from the through hole in which the element is arranged and emits fluorescence by being irradiated with light from the semiconductor laser element, and a plurality of wavelength conversion members arranged on the translucent member. A light source device having at least a through hole in which the semiconductor laser element is arranged and a lid for airtightly sealing the through hole in which the wavelength conversion member is arranged.

本発明の一実施形態によれば、蓋体により気密封止された透光性部材の貫通孔内に波長変換部材が配置されるため、波長変換部材の劣化が防止された光源装置を提供することができる。 According to one embodiment of the present invention, since the wavelength conversion member is arranged in the through hole of the translucent member airtightly sealed by the lid, a light source device in which deterioration of the wavelength conversion member is prevented is provided. be able to.

実施形態１に係る光源装置の模式的平面図である。It is a schematic plan view of the light source apparatus which concerns on Embodiment 1. FIG. 図１Ａ中の１Ｂ－１Ｂ断面を示す図である。It is a figure which shows the cross section of 1B-1B in FIG. 1A. 実施形態１に係る透光性部材の模式的平面図である。It is a schematic plan view of the translucent member which concerns on Embodiment 1. FIG. 図２Ａ中の２Ｂ－２Ｂ断面を示す図である。It is a figure which shows the cross section of 2B-2B in FIG. 2A. 実施形態１に係る光源装置の製造方法を説明する模式的平面図である。It is a schematic plan view explaining the manufacturing method of the light source apparatus which concerns on Embodiment 1. FIG. 図３Ａ中の３Ｂ－３Ｂ断面を示す図である。It is a figure which shows the cross section of 3B-3B in FIG. 3A. 実施形態１に係る光源装置の製造方法を説明する模式的平面図である。It is a schematic plan view explaining the manufacturing method of the light source apparatus which concerns on Embodiment 1. FIG. 図４Ａ中の４Ｂ－４Ｂ断面を示す図である。It is a figure which shows the cross section of 4B-4B in FIG. 4A. 実施形態１に係る光源装置の製造方法を説明する模式的平面図である。It is a schematic plan view explaining the manufacturing method of the light source apparatus which concerns on Embodiment 1. FIG. 図５Ａ中の５Ｂ－５Ｂ断面を示す図である。It is a figure which shows the cross section of 5B-5B in FIG. 5A. 実施形態１に係る光源装置の製造方法を説明する模式的平面図である。It is a schematic plan view explaining the manufacturing method of the light source apparatus which concerns on Embodiment 1. FIG. 図６Ａ中の６Ｂ－６Ｂ断面を示す図である。It is a figure which shows the cross section of 6B-6B in FIG. 6A. 実施形態２に係る光源装置の模式的平面図である。It is a schematic plan view of the light source apparatus which concerns on Embodiment 2. FIG. 図７Ａ中の７Ｂ－７Ｂ断面を示す図である。It is a figure which shows the 7B-7B cross section in FIG. 7A. 実施形態３に係る光源装置の模式的平面図である。It is a schematic plan view of the light source apparatus which concerns on Embodiment 3. FIG. 図８Ａ中の８Ｂ－８Ｂ断面を示す図である。It is a figure which shows the cross section of 8B-8B in FIG. 8A.

［実施形態１に係る光源装置１］
図１Ａは実施形態１に係る光源装置の模式的平面図であり、図１Ｂは図１Ａ中の１Ｂ－１Ｂ断面を示す図である。図２Ａは実施形態１に係る透光性部材の模式的平面図であり、図２Ｂは図２Ａ中の２Ｂ－２Ｂ断面を示す図である。図１Ａでは、点線により、半導体レーザ素子２２と波長変換部材２４を透過的に示している。図１Ａから図２Ｂに示すように、実施形態１に係る光源装置１は、基体１２と、基体１２上に配置され、複数の貫通孔Ｘを備えた透光性部材２０と、複数の貫通孔Ｘの一つに配置される半導体レーザ素子２２と、複数の貫通孔Ｘのうち半導体レーザ素子２２が配置される貫通孔Ｘとは異なる貫通孔Ｘ内に配置され、半導体レーザ素子２２からの光が照射されることにより蛍光を発する波長変換部材２４と、透光性部材２０上に配置され、複数の貫通孔Ｘのうち少なくとも半導体レーザ素子２２が配置される貫通孔Ｘと波長変換部材２４が配置される貫通孔Ｘとを気密封止する蓋体２６と、を有する光源装置である。以下、詳細に説明する。 [Light source device 1 according to the first embodiment]
1A is a schematic plan view of the light source device according to the first embodiment, and FIG. 1B is a diagram showing a cross section of 1B-1B in FIG. 1A. FIG. 2A is a schematic plan view of the translucent member according to the first embodiment, and FIG. 2B is a diagram showing a cross section of 2B-2B in FIG. 2A. In FIG. 1A, the semiconductor laser element 22 and the wavelength conversion member 24 are transparently shown by dotted lines. As shown in FIGS. 1A to 2B, the light source device 1 according to the first embodiment has a substrate 12, a translucent member 20 arranged on the substrate 12 and having a plurality of through holes X, and a plurality of through holes. Light from the semiconductor laser element 22 arranged in a through hole X different from the semiconductor laser element 22 arranged in one of X and the through hole X in which the semiconductor laser element 22 is arranged among a plurality of through holes X. The wavelength conversion member 24 that emits light when irradiated with light, and the through hole X and the wavelength conversion member 24 that are arranged on the translucent member 20 and in which at least the semiconductor laser element 22 is arranged among the plurality of through holes X. It is a light source device having a lid 26 that airtightly seals the arranged through hole X. Hereinafter, it will be described in detail.

（基体１２）
基体１２は半導体レーザ素子２２を直接又はサブマウント等を介して載置する部材である。基体１２の材料は窒化アルミニウム、アルミナ、ジルコニア、窒化珪素、ＬＴＣＣ等のセラミック材料や、樹脂材料、シリコン等の単結晶、絶縁層を備えた金属材料などである。基体１２の平面形状は矩形、円形、三角形や六角形等の多角形などである。 (Hypokeimenon 12)
The substrate 12 is a member on which the semiconductor laser element 22 is placed directly or via a submount or the like. The material of the substrate 12 is a ceramic material such as aluminum nitride, alumina, zirconia, silicon nitride, and LTCC, a resin material, a single crystal such as silicon, and a metal material having an insulating layer. The planar shape of the substrate 12 is a rectangle, a circle, a polygon such as a triangle or a hexagon, and the like.

（第１導体配線１４、第２導体配線１６）
基体１２上には半導体レーザ素子２２に給電する第１導体配線１４と第２導体配線１６が配置されていてもよい。第１導体配線１４と第２導体配線１６は半導体レーザ素子２２の第１電極２２ｂと第２電極２２ｃとにそれぞれ電気的に接続される。第１導体配線１４や第２導体配線１６の材料はＣｕ、Ａｌ、Ａｇ、Ａｕ又はこれらの金属を主成分とする合金などである。 (1st conductor wiring 14, 2nd conductor wiring 16)
The first conductor wiring 14 and the second conductor wiring 16 for supplying power to the semiconductor laser element 22 may be arranged on the substrate 12. The first conductor wiring 14 and the second conductor wiring 16 are electrically connected to the first electrode 22b and the second electrode 22c of the semiconductor laser element 22, respectively. The material of the first conductor wiring 14 and the second conductor wiring 16 is Cu, Al, Ag, Au, an alloy containing these metals as a main component, or the like.

（外部電極）
基体１２下には第１外部電極３０と第２外部電極３２が配置されていてもよい。第１外部電極３０と第２外部電極３２は基体１２に形成されたビア１８を介して、基体１２上の第１導体配線１４と第２導体配線１６にそれぞれ電気的に接続される。第１外部電極３０と第２外部電極３２の材料はＣｕ、Ａｌ、Ａｇ、Ａｕなどである。 (External electrode)
The first external electrode 30 and the second external electrode 32 may be arranged under the substrate 12. The first external electrode 30 and the second external electrode 32 are electrically connected to the first conductor wiring 14 and the second conductor wiring 16 on the substrate 12 via the via 18 formed on the substrate 12, respectively. The materials of the first external electrode 30 and the second external electrode 32 are Cu, Al, Ag, Au and the like.

（透光性部材２０）
透光性部材２０は基体１２上に配置されている。 (Translucent member 20)
The translucent member 20 is arranged on the substrate 12.

透光性部材２０は透光性を有する部材である。透光性とは、半導体レーザ素子２２から出射されるレーザ光及び波長変換部材２４から発せられる蛍光を透過させる性質をいい、例えば、半導体レーザ素子２２から出射されるレーザ光及び波長変換部材２４から発せられる蛍光それぞれの光量の５０％以上、さらには７０％以上を透過させるものが好ましい。透光性部材２０の材料はガラスなどである。特にガラスは透過率が高いため、透光性部材２０の材料として好ましく用いることができる。 The translucent member 20 is a member having translucency. Translucency refers to the property of transmitting the laser light emitted from the semiconductor laser element 22 and the fluorescence emitted from the wavelength conversion member 24, for example, the laser light emitted from the semiconductor laser element 22 and the wavelength conversion member 24. It is preferable that 50% or more, more 70% or more of the amount of light emitted from each fluorescence is transmitted. The material of the translucent member 20 is glass or the like. In particular, since glass has a high transmittance, it can be preferably used as a material for the translucent member 20.

透光性部材２０の寸法は基体１２や半導体レーザ素子２２の寸法に応じて適宜選択することができる。 The dimensions of the translucent member 20 can be appropriately selected according to the dimensions of the substrate 12 and the semiconductor laser element 22.

透光性部材２０は複数の貫通孔Ｘを備えている。本実施形態では、透光性部材２０の上方から見た貫通孔Ｘの形状は四角形であるものとするが、これに限定されるものではなく、例えば、円形、楕円形、多角形等を採ることもできる。 The translucent member 20 includes a plurality of through holes X. In the present embodiment, the shape of the through hole X seen from above of the translucent member 20 is quadrangular, but the shape is not limited to this, and for example, a circular shape, an elliptical shape, a polygonal shape, or the like is adopted. You can also do it.

透光性部材２０は、複数の部材を、直接または他の部材を介して互いに接合して構成されていてもよいし、一の部材から構成されていてもよい。一の部材から一の透光性部材２０が構成される場合には、部材点数を抑制できる。また、一の部材から構成される場合は、複数の部材が接合されて一の透光性部材２０が構成される場合よりも、空気中の水分が貫通孔Ｘ内へ侵入や混入などすることを抑制することができる。 The translucent member 20 may be configured by joining a plurality of members directly or via other members to each other, or may be configured by one member. When one translucent member 20 is composed of one member, the number of member points can be suppressed. Further, in the case of being composed of one member, the moisture in the air invades or mixes into the through hole X as compared with the case where a plurality of members are joined to form one translucent member 20. Can be suppressed.

（半導体レーザ素子２２）
半導体レーザ素子２２は基体１２上に配置される。半導体レーザ素子２２は基体１２（あるいは第１導体配線１４や第２導体配線１６）の上面に直接的に配置されていてもよいし、サブマウントなどの他の部材を介して配置されていてもよい。直接的に配置する場合には光源装置１の高さを低くして、光源装置１の小型化を図ることができる。他方、他の部材を介して配置する場合には、半導体レーザ素子２２の光出射面を基体１２の上面から離すことができる。この結果、半導体レーザ素子２２から出射されたレーザ光が基体１２の上面に当たるのを抑制し、レーザ光を波長変換部材２４に照射しやすくすることができる。サブマウントの材料には窒化アルミニウムや炭化珪素などを用いることができる。 (Semiconductor laser element 22)
The semiconductor laser device 22 is arranged on the substrate 12. The semiconductor laser device 22 may be arranged directly on the upper surface of the substrate 12 (or the first conductor wiring 14 or the second conductor wiring 16), or may be arranged via another member such as a submount. good. When directly arranged, the height of the light source device 1 can be lowered to reduce the size of the light source device 1. On the other hand, when the semiconductor laser element 22 is arranged via another member, the light emitting surface of the semiconductor laser element 22 can be separated from the upper surface of the substrate 12. As a result, it is possible to suppress the laser light emitted from the semiconductor laser element 22 from hitting the upper surface of the substrate 12, and to make it easier to irradiate the wavelength conversion member 24 with the laser light. Aluminum nitride, silicon carbide, or the like can be used as the material of the submount.

また、半導体レーザ素子２２は複数の貫通孔Ｘの一つに配置される。半導体レーザ素子２２が貫通孔Ｘ内に配置されることにより、例えば、半導体レーザ素子２２に対する光集塵を抑制することができる。 Further, the semiconductor laser element 22 is arranged in one of the plurality of through holes X. By arranging the semiconductor laser element 22 in the through hole X, for example, light dust collection to the semiconductor laser element 22 can be suppressed.

半導体レーザ素子２２から出射されたレーザ光の少なくとも一部は、基体１２上に配置される各部材を、例えば透光性部材２０→波長変換部材２４→透光性部材２０の順に通過して、光源装置１の側面から取り出される。 At least a part of the laser light emitted from the semiconductor laser element 22 passes through each member arranged on the substrate 12 in the order of, for example, the translucent member 20 → the wavelength conversion member 24 → the translucent member 20. It is taken out from the side surface of the light source device 1.

半導体レーザ素子２２には各種の半導体レーザ素子を用いることができる。本実施形態では、ＧａＮ系半導体レーザ素子を半導体レーザ素子２２として用いている。半導体レーザ素子２２は、例えば、窒化物半導体などを用いて形成される半導体層２２ａと、第１電極２２ｂと、第２電極２２ｃと、を有している。本実施形態では、半導体層２２ａ上に第１電極２２ｂが形成され、半導体層２２ａ下に第２電極２２ｃが形成されるものとするが、第１電極２２ｂと第２電極２２ｃが形成される位置は特に限定されない。第１電極２２ｂは例えばｐ側電極であり、第２電極２２ｃは例えばｎ側電極である。 Various semiconductor laser elements can be used for the semiconductor laser element 22. In this embodiment, a GaN-based semiconductor laser device is used as the semiconductor laser device 22. The semiconductor laser device 22 has, for example, a semiconductor layer 22a formed by using a nitride semiconductor or the like, a first electrode 22b, and a second electrode 22c. In the present embodiment, it is assumed that the first electrode 22b is formed on the semiconductor layer 22a and the second electrode 22c is formed under the semiconductor layer 22a, but the positions where the first electrode 22b and the second electrode 22c are formed are formed. Is not particularly limited. The first electrode 22b is, for example, the p-side electrode, and the second electrode 22c is, for example, the n-side electrode.

半導体レーザ素子２２の第１電極２２ｂと第２電極２２ｃはフリップチップ実装やワイヤボンディングなどの方法により、第１導体配線１４と第２導体配線１６にそれぞれ電気的に接続される。フリップチップ実装による場合はバンプなどの接合部材を用いることができ、ワイヤボンディングによる場合はワイヤなどの接合部材２３を用いることができる。 The first electrode 22b and the second electrode 22c of the semiconductor laser element 22 are electrically connected to the first conductor wiring 14 and the second conductor wiring 16, respectively, by a method such as flip chip mounting or wire bonding. In the case of flip-chip mounting, a joining member such as a bump can be used, and in the case of wire bonding, a joining member 23 such as a wire can be used.

半導体レーザ素子２２の数は任意の数であり、１つであってもよいし、複数であってもよい。複数である場合には、透光性部材２０が有する１つの貫通孔Ｘ内に複数の半導体レーザ素子２２を配置してもよいし、複数の半導体レーザ素子２２を個別の貫通孔Ｘ内に配置してもよい。また、複数の半導体レーザ素子２２が配置される１つ以上の貫通孔Ｘと、１つの半導体レーザ素子２２が配置される１つ以上の貫通孔Ｘと、が混在していてもよい。 The number of the semiconductor laser elements 22 is arbitrary, and may be one or a plurality. When there are a plurality of semiconductor laser elements 22, a plurality of semiconductor laser elements 22 may be arranged in one through hole X included in the translucent member 20, or a plurality of semiconductor laser elements 22 may be arranged in individual through holes X. You may. Further, one or more through holes X in which a plurality of semiconductor laser elements 22 are arranged and one or more through holes X in which one semiconductor laser element 22 is arranged may coexist.

（波長変換部材２４）
波長変換部材２４は、複数の貫通孔Ｘのうち半導体レーザ素子２２が配置される貫通孔Ｘとは異なる貫通孔Ｘ内に配置される。これにより、空気中の水分が波長変換部材２４に取り込まれる虞を抑制して、波長変換部材２４の水分による劣化を効果的に防止することができる。また、波長変換部材２４の材料が塵となり、半導体レーザ素子２２に付着することを抑制して、半導体レーザ素子２２に対する光集塵を防止することができる。 (Wavelength conversion member 24)
The wavelength conversion member 24 is arranged in a through hole X different from the through hole X in which the semiconductor laser element 22 is arranged among the plurality of through holes X. As a result, it is possible to suppress the possibility that moisture in the air is taken into the wavelength conversion member 24 and effectively prevent deterioration of the wavelength conversion member 24 due to moisture. Further, it is possible to prevent the material of the wavelength conversion member 24 from becoming dust and adhering to the semiconductor laser element 22 to prevent light collection on the semiconductor laser element 22.

波長変換部材２４には、半導体レーザ素子２２からの光が照射されることにより蛍光を発する部材、例えば、蛍光体を焼結させた部材、蛍光体に焼結助剤を添加して焼結させた部材などを用いることができる。波長変換部材２４に用いる蛍光体は、公知の材料から選択することができるが、半導体レーザ素子２２の出射光と組み合わせて白色光が得られるような材料を選択するのが好ましい。例えば、半導体レーザ素子２２から青色光が出射される場合には、半導体レーザ素子２２の出射光を励起光として黄色光を発する蛍光体を用いることができる。黄色光を発する蛍光体としては、ＹＡＧ系の蛍光体が挙げられる。また、半導体レーザ素子２２から青色光よりも短波の光（例えば紫外光等）が出射される場合には、青色、緑色及び赤色の各色を発光する蛍光体を用いることができる。本実施形態では、波長変換部材２４が貫通孔Ｘ内に配置され光源装置１の外部に露出していないため、水分による波長変換部材２４の劣化を防止することができ、例えばフッ化物蛍光体のように潮解性を有する蛍光体も用いることができる。 The wavelength conversion member 24 is a member that emits fluorescence when irradiated with light from the semiconductor laser element 22, for example, a member obtained by sintering a phosphor, or a member obtained by adding a sintering aid to the phosphor to be sintered. It is possible to use a member or the like. The phosphor used for the wavelength conversion member 24 can be selected from known materials, but it is preferable to select a material that can obtain white light in combination with the emitted light of the semiconductor laser device 22. For example, when blue light is emitted from the semiconductor laser element 22, a phosphor that emits yellow light can be used by using the emitted light of the semiconductor laser element 22 as excitation light. Examples of the fluorescent substance that emits yellow light include a YAG-based fluorescent substance. Further, when the semiconductor laser element 22 emits light having a shorter wave than blue light (for example, ultraviolet light), a phosphor that emits each color of blue, green, and red can be used. In the present embodiment, since the wavelength conversion member 24 is arranged in the through hole X and is not exposed to the outside of the light source device 1, deterioration of the wavelength conversion member 24 due to moisture can be prevented, for example, a fluoride phosphor. As described above, a fluorophore having deliquescent property can also be used.

波長変換部材２４の数は任意の数であり、１つであってもよいし、複数であってもよい。複数である場合には、透光性部材２０が有する１つの貫通孔Ｘ内に複数の波長変換部材２４を配置してもよいし、複数の波長変換部材２４を個別の貫通孔Ｘ内に配置してもよい。また、複数の波長変換部材２４が配置される１つ以上の貫通孔Ｘと、１つの波長変換部材２４が配置される１つ以上の貫通孔Ｘと、が混在していてもよい。 The number of the wavelength conversion members 24 is arbitrary, and may be one or a plurality. When there are a plurality of wavelength conversion members 24, a plurality of wavelength conversion members 24 may be arranged in one through hole X included in the translucent member 20, or a plurality of wavelength conversion members 24 may be arranged in individual through holes X. You may. Further, one or more through holes X in which a plurality of wavelength conversion members 24 are arranged and one or more through holes X in which one wavelength conversion member 24 is arranged may coexist.

波長変換部材２４の形状は例えば直方体や円柱とすることができる。また、波長変換部材２４の上面視における幅は１ｍｍ以下とすることが好ましい。ただし、波長変換部材２４はこれが配置される貫通孔Ｘとの間に空隙が生じない形状や寸法を有していることが好ましい。つまり、波長変換部材２４は透光性部材２０の貫通孔Ｘに嵌合する形状を有していることが好ましい。このようにすれば波長変換部材２４の内外の屈折率差による光反射を抑える効果がある。 The shape of the wavelength conversion member 24 can be, for example, a rectangular parallelepiped or a cylinder. Further, the width of the wavelength conversion member 24 in the top view is preferably 1 mm or less. However, it is preferable that the wavelength conversion member 24 has a shape and dimensions in which a gap is not formed between the wavelength conversion member 24 and the through hole X in which the wavelength conversion member 24 is arranged. That is, it is preferable that the wavelength conversion member 24 has a shape that fits into the through hole X of the translucent member 20. By doing so, there is an effect of suppressing light reflection due to the difference in refractive index between the inside and outside of the wavelength conversion member 24.

（蓋体２６）
蓋体２６は、透光性部材２０上に配置され、複数の貫通孔Ｘのうち少なくとも半導体レーザ素子２２が配置される貫通孔Ｘと波長変換部材２４が配置される貫通孔Ｘとを気密封止する部材である。蓋体２６が貫通孔Ｘを気密封止することにより、貫通孔Ｘ内に空気中の水分や塵などが侵入や混入などすることを抑制することができる。蓋体２６は、透光性部材２０の上面に、直接的に配置されていてもよいし、後述する反射膜２８などの他の部材を介して配置されていてもよい。蓋体２６の材料は窒化アルミニウム、アルミナ、ジルコニア、窒化珪素、ＬＴＣＣ等のセラミック材料や、樹脂材料、シリコン等の単結晶、絶縁層を備えた金属材料などである。 (Cover 26)
The lid 26 is arranged on the translucent member 20, and among the plurality of through holes X, at least the through hole X in which the semiconductor laser element 22 is arranged and the through hole X in which the wavelength conversion member 24 is arranged are air-sealed. It is a member to stop. By airtightly sealing the through hole X by the lid body 26, it is possible to prevent moisture, dust, etc. in the air from entering or entering the through hole X. The lid 26 may be arranged directly on the upper surface of the translucent member 20, or may be arranged via another member such as the reflective film 28 described later. The material of the lid 26 is a ceramic material such as aluminum nitride, alumina, zirconia, silicon nitride, and LTCC, a resin material, a single crystal such as silicon, and a metal material having an insulating layer.

（反射膜２８）
基体１２と透光性部材２０との間や、透光性部材２０と蓋体２６との間には、半導体レーザ素子２２からの光及び蛍光の少なくとも一方を反射する反射膜２８が配置されていることが好ましい。このようにすれば光源装置１から効率よく側方へ光を取り出すことができる。反射膜２８の材料にはＡｌやＡｇ又はこれらの金属を主成分とする合金などを含むことが好ましい。反射膜２８は、基体１２と透光性部材２０とを接合する役割や、透光性部材２０と蓋体２６とを接合する役割を兼ねていることが好ましい。この接合部分としては、ＡｕやＡｕ－Ｓｎを含むことが好ましい。反射膜２８の積層構造としては、例えば、基体１２から透光性部材２０に向かって、または蓋体２６から透光性部材２０に向かって、Ｔｉ／Ｐｔ／Ａｕ－Ｓｎ／Ｐｔ／Ａｌの順に積層した構造などが挙げられる。 (Reflective film 28)
A reflective film 28 that reflects at least one of light and fluorescence from the semiconductor laser element 22 is arranged between the substrate 12 and the translucent member 20 and between the translucent member 20 and the lid 26. It is preferable to have. By doing so, the light can be efficiently extracted from the light source device 1 to the side. The material of the reflective film 28 preferably contains Al, Ag, or an alloy containing these metals as a main component. The reflective film 28 preferably has a role of joining the substrate 12 and the translucent member 20 and a role of joining the translucent member 20 and the lid 26. The joint portion preferably contains Au or Au-Sn. The laminated structure of the reflective film 28 is, for example, in the order of Ti / Pt / Au-Sn / Pt / Al from the substrate 12 toward the translucent member 20 or from the lid 26 toward the translucent member 20. Examples include laminated structures.

以上説明した実施形態１に係る光源装置１によれば、蓋体２６により気密封止された透光性部材２０の貫通孔Ｘ内に波長変換部材２４が配置されるため、波長変換部材２４の劣化が防止された光源装置を提供することができる。 According to the light source device 1 according to the first embodiment described above, since the wavelength conversion member 24 is arranged in the through hole X of the translucent member 20 airtightly sealed by the lid 26, the wavelength conversion member 24 It is possible to provide a light source device in which deterioration is prevented.

（実施形態１に係る光源装置１の製造方法）
図３Ａから図６Ａは、実施形態１に係る光源装置の製造方法を説明する模式的平面図である。また、図３Ｂから図６Ｂは、図３Ａから図６Ａ中の３Ｂ－３Ｂ断面、４Ｂ－４Ｂ断面、５Ｂ－５Ｂ断面、及び６Ｂ－６Ｂ断面をそれぞれ示す図である。以下、これらの図を参照しつつ、実施形態１に係る光源装置１の製造方法について説明する。 (Manufacturing method of the light source device 1 according to the first embodiment)
3A to 6A are schematic plan views illustrating a method of manufacturing the light source device according to the first embodiment. 3B to 6B are views showing a cross section of 3B-3B, a cross section of 4B-4B, a cross section of 5B-5B, and a cross section of 6B-6B in FIGS. 3A to 6A, respectively. Hereinafter, the manufacturing method of the light source device 1 according to the first embodiment will be described with reference to these figures.

まず、図３Ａ、図３Ｂに示すように、基体１２を準備する。基体１２上には第１導体配線１４と第２導体配線１６が配置されており、基体１２下には第１外部電極３０と第２外部電極３２が配置されている。 First, the substrate 12 is prepared as shown in FIGS. 3A and 3B. The first conductor wiring 14 and the second conductor wiring 16 are arranged on the substrate 12, and the first external electrode 30 and the second external electrode 32 are arranged under the substrate 12.

次に、図４Ａ、図４Ｂに示すように、基体１２と透光性部材２０とを反射膜２８で接合する。なお、基体１２と透光性部材２０との接合は、例えば、基体１２の上面に基体１２側からＴｉ／Ｐｔ／Ａｕ－Ｓｎを積層し、その上に、下面に透光性部材２０側からＡｌ／Ｐｔ／Ａｕを積層した透光性部材２０を配置し、加熱することにより接合することができる。また、基体１２の上面と透光性部材２０の下面のそれぞれにＡｇを成膜したものを重ね合わせ、加熱して接合してもよい。 Next, as shown in FIGS. 4A and 4B, the substrate 12 and the translucent member 20 are joined by the reflective film 28. For joining the substrate 12 and the translucent member 20, for example, Ti / Pt / Au-Sn is laminated from the substrate 12 side on the upper surface of the substrate 12, and Ti / Pt / Au-Sn is laminated on the lower surface from the translucent member 20 side. The translucent member 20 in which Al / Pt / Au is laminated is arranged and can be joined by heating. Further, the upper surface of the substrate 12 and the lower surface of the translucent member 20 may be superposed with a film of Ag and heated to be bonded.

次に、図５Ａ、図５Ｂに示すように、半導体レーザ素子２２と波長変換部材２４を透光性部材２０の異なる貫通孔Ｘ内にそれぞれ配置する。半導体レーザ素子２２の第１電極２２ｂと第２電極２２ｃは、第１導体配線１４と第２導体配線１６にそれぞれ電気的に接続する。本実施形態では、第１電極２２ｂと第１導体配線１４はワイヤボンディングにより電気的に接続するものとし、第２電極２２ｃと第２導体配線１６はダイボンディングにより電気的に接続するものとする。波長変換部材２４は、基体１２と透光性部材２０とを接合する前に、あらかじめ透光性部材２０の貫通孔Ｘ内に篏合または接着させて配置してもよい。 Next, as shown in FIGS. 5A and 5B, the semiconductor laser element 22 and the wavelength conversion member 24 are arranged in different through holes X of the translucent member 20, respectively. The first electrode 22b and the second electrode 22c of the semiconductor laser element 22 are electrically connected to the first conductor wiring 14 and the second conductor wiring 16, respectively. In the present embodiment, the first electrode 22b and the first conductor wiring 14 are electrically connected by wire bonding, and the second electrode 22c and the second conductor wiring 16 are electrically connected by die bonding. The wavelength conversion member 24 may be arranged in advance in the through hole X of the translucent member 20 by aggregating or adhering it before joining the substrate 12 and the translucent member 20.

次に、図６Ａ、図６Ｂに示すように、透光性部材２０の貫通孔Ｘが気密封止されるよう、透光性部材２０と蓋体２６を反射膜２８で接合する。透光性部材２０と蓋体２６の接合は、例えば、透光性部材２０の上面に透光性部材２０側からＡｌ／Ｐｔ／Ａｕを積層し、その上に、下面に蓋体２６側からＴｉ／Ｐｔ／Ａｕ－Ｓｎを積層した蓋体２６を配置し、加熱することにより接合することができる。また、透光性部材２０の上面と蓋体２６の下面のそれぞれにＡｇを成膜したものを重ね合わせ、加熱して接合してもよい。 Next, as shown in FIGS. 6A and 6B, the translucent member 20 and the lid 26 are joined by the reflective film 28 so that the through hole X of the translucent member 20 is hermetically sealed. To join the translucent member 20 and the lid 26, for example, Al / Pt / Au is laminated on the upper surface of the translucent member 20 from the translucent member 20 side, and Al / Pt / Au is laminated on the lower surface from the lid 26 side. The lid 26 in which Ti / Pt / Au-Sn is laminated is arranged and can be joined by heating. Further, the upper surface of the translucent member 20 and the lower surface of the lid 26 may be superposed with a film of Ag and heated to join them.

以上説明した実施形態１に係る光源装置１の製造方法によれば、波長変換部材２４の水分による劣化が防止された光源装置を実現し得る。 According to the manufacturing method of the light source device 1 according to the first embodiment described above, it is possible to realize a light source device in which deterioration of the wavelength conversion member 24 due to moisture is prevented.

［実施形態２に係る光源装置２］
図７Ａは実施形態２に係る光源装置の模式的平面図であり、図７Ｂは図７Ａ中の７Ｂ－７Ｂ断面を示す図である。図７Ａ、図７Ｂに示すように、実施形態２に係る光源装置２は、蓋体２６の上面に第１外部電極３０と第２外部電極３２が配置され、蓋体２６の下面に第１導体配線１４と第２導体配線１６が配置され、第１外部電極３０と第２外部電極３２が、第１導体配線１４と第２導体配線１６とに、蓋体２６に形成されたビア１８を介してそれぞれ電気的に接続されている点、及び半導体レーザ素子２２がサブマウント３４を介して基体１２に配置されている点で、実施形態１に係る光源装置１と相違し、その他の点で一致する。半導体レーザ素子２２の第１電極２２ｂは、接合部材２３を介して第１導体配線１４に電気的に接続されている。また、半導体レーザ素子２２の第２電極２２ｃはサブマウント３４内に設けられた内部配線を介して、第２導体配線１６に電気的に接続されている。サブマウント３４と第２導体配線１６との間には、スペーサ３８が設けられていてもよい。実施形態２に係る光源装置２によっても、実施形態１に係る光源装置１と同様に、蓋体２６により気密封止された透光性部材２０の貫通孔Ｘ内に波長変換部材２４が配置されるため、波長変換部材２４の水分による劣化が防止された光源装置を提供することができる。 [Light source device 2 according to the second embodiment]
FIG. 7A is a schematic plan view of the light source device according to the second embodiment, and FIG. 7B is a diagram showing a cross section of 7B-7B in FIG. 7A. As shown in FIGS. 7A and 7B, in the light source device 2 according to the second embodiment, the first external electrode 30 and the second external electrode 32 are arranged on the upper surface of the lid 26, and the first conductor is arranged on the lower surface of the lid 26. The wiring 14 and the second conductor wiring 16 are arranged, and the first external electrode 30 and the second external electrode 32 are connected to the first conductor wiring 14 and the second conductor wiring 16 via a via 18 formed on the lid 26. The semiconductor laser element 22 is different from the light source device 1 according to the first embodiment in that it is electrically connected to each other and the semiconductor laser element 22 is arranged on the substrate 12 via the submount 34. do. The first electrode 22b of the semiconductor laser element 22 is electrically connected to the first conductor wiring 14 via the joining member 23. Further, the second electrode 22c of the semiconductor laser element 22 is electrically connected to the second conductor wiring 16 via the internal wiring provided in the submount 34. A spacer 38 may be provided between the submount 34 and the second conductor wiring 16. Also in the light source device 2 according to the second embodiment, the wavelength conversion member 24 is arranged in the through hole X of the translucent member 20 airtightly sealed by the lid 26, similarly to the light source device 1 according to the first embodiment. Therefore, it is possible to provide a light source device in which deterioration of the wavelength conversion member 24 due to moisture is prevented.

実施形態２では、基体１２側ではなく蓋体２６側に、第１外部電極３０、第２外部電極３２、第１導体配線１４、及び第２導体配線１６が配置されるため、基体１２の材料は必ずしも絶縁性を有している必要がない。したがって、実施形態２によれば、基体１２の材料として、導電性に優れる銅などの金属を用いて、光源装置２の放熱性を高めることができる。 In the second embodiment, the first external electrode 30, the second external electrode 32, the first conductor wiring 14, and the second conductor wiring 16 are arranged not on the substrate 12 side but on the lid 26 side, so that the material of the substrate 12 is used. Does not necessarily have insulation. Therefore, according to the second embodiment, the heat dissipation of the light source device 2 can be enhanced by using a metal such as copper having excellent conductivity as the material of the substrate 12.

（実施形態２に係る光源装置２の製造方法）
実施形態２に係る光源装置２の製造方法は、基体１２を準備する工程において、第１外部電極３０、第２外部電極３２、第１導体配線１４、及び第２導体配線１６が配置されていない基体１２を用い、透光性部材２０と蓋体２６を接合する工程において、第１外部電極３０、第２外部電極３２、第１導体配線１４、及び第２導体配線１６が配置されている蓋体２６を用いる点で実施形態１に係る光源装置１の製造方法と相違し、その他の点で一致する。実施形態２に係る光源装置２の製造方法によっても、実施形態１に係る光源装置１の製造方法と同様に、波長変換部材２４の水分による劣化が防止された光源装置２を実現し得る。 (Manufacturing method of the light source device 2 according to the second embodiment)
In the method for manufacturing the light source device 2 according to the second embodiment, the first external electrode 30, the second external electrode 32, the first conductor wiring 14, and the second conductor wiring 16 are not arranged in the step of preparing the substrate 12. In the step of joining the translucent member 20 and the lid 26 using the substrate 12, the lid on which the first external electrode 30, the second external electrode 32, the first conductor wiring 14, and the second conductor wiring 16 are arranged. It differs from the manufacturing method of the light source device 1 according to the first embodiment in that the body 26 is used, and is the same in other respects. Similar to the method for manufacturing the light source device 1 according to the first embodiment, the method for manufacturing the light source device 2 according to the second embodiment can also realize the light source device 2 in which the deterioration of the wavelength conversion member 24 due to moisture is prevented.

［実施形態３に係る光源装置３］
図８Ａは実施形態３に係る光源装置の模式的平面図であり、図８Ｂは図８Ａ中の８Ｂ－８Ｂ断面を示す図である。図８Ａ、図８Ｂに示すように、実施形態３に係る光源装置３は、基体１２上に第１導体配線１４が配置され、基体１２下に第１外部電極３０が配置され、これら第１外部電極３０と第１導体配線１４が基体１２に形成されたビア１８を介して電気的に接続されているとともに、蓋体２６上に第２外部電極３２が配置され、蓋体２６下に第２導体配線１６が配置され、これら第２外部電極３２と第２導体配線１６が蓋体２６に形成されたビア１８を介して電気的に接続されている点で、実施形態１に係る光源装置１と相違し、その他の点で一致する。実施形態３に係る光源装置３によっても、実施形態１に係る光源装置１と同様に、蓋体２６により気密封止された透光性部材２０の貫通孔Ｘ内に波長変換部材２４が配置されるため、波長変換部材２４の水分による劣化が防止された光源装置を提供することができる。 [Light source device 3 according to the third embodiment]
8A is a schematic plan view of the light source device according to the third embodiment, and FIG. 8B is a diagram showing a cross section of 8B-8B in FIG. 8A. As shown in FIGS. 8A and 8B, in the light source device 3 according to the third embodiment, the first conductor wiring 14 is arranged on the substrate 12, the first external electrode 30 is arranged under the substrate 12, and these first external electrodes 30 are arranged. The electrode 30 and the first conductor wiring 14 are electrically connected via a via 18 formed on the substrate 12, and a second external electrode 32 is arranged on the lid 26 and a second under the lid 26. The light source device 1 according to the first embodiment is in that the conductor wiring 16 is arranged and the second external electrode 32 and the second conductor wiring 16 are electrically connected to each other via a via 18 formed on the lid 26. It differs from and agrees in other respects. Also in the light source device 3 according to the third embodiment, the wavelength conversion member 24 is arranged in the through hole X of the translucent member 20 airtightly sealed by the lid 26, similarly to the light source device 1 according to the first embodiment. Therefore, it is possible to provide a light source device in which deterioration of the wavelength conversion member 24 due to moisture is prevented.

（実施形態３に係る光源装置３の製造方法）
実施形態３に係る光源装置３の製造方法は、透光性部材２０と蓋体２６を接合する工程において、第２外部電極３２と第２導体配線１６が配置されている蓋体２６を用いる点で実施形態１に係る光源装置１の製造方法と相違し、その他の点で一致する。実施形態３に係る光源装置３の製造方法によっても、実施形態１に係る光源装置１の製造方法と同様に、波長変換部材２４の水分による劣化が防止された光源装置３を実現し得る。 (Manufacturing method of the light source device 3 according to the third embodiment)
The method for manufacturing the light source device 3 according to the third embodiment is to use the lid 26 in which the second external electrode 32 and the second conductor wiring 16 are arranged in the step of joining the translucent member 20 and the lid 26. It is different from the manufacturing method of the light source device 1 according to the first embodiment, and is the same in other respects. Similar to the manufacturing method of the light source device 1 according to the first embodiment, the manufacturing method of the light source device 3 according to the third embodiment can also realize the light source device 3 in which the deterioration of the wavelength conversion member 24 due to moisture is prevented.

以上、実施形態について説明したが、これらの説明によって特許請求の範囲に記載された構成は何ら限定されるものではない。 Although the embodiments have been described above, the configurations described in the claims are not limited by these explanations.

１、２、３ 光源装置
１２ 基体
１４ 第１導体配線
１６ 第２導体配線
１８ ビア
２０ 透光性部材
２２ 半導体レーザ素子
２２ａ 半導体層
２２ｂ 第１電極
２２ｃ 第２電極
２３ 接合部材
２４ 波長変換部材
２６ 蓋体
２８ 反射膜
３０ 第１外部電極
３２ 第２外部電極
３４ サブマウント
３６ 保護素子
３８ スペーサ
Ｘ 貫通孔 1, 2, 3 Light source device 12 Base 14 First conductor wiring 16 Second conductor wiring 18 Via 20 Translucent member 22 Semiconductor laser element 22a Semiconductor layer 22b First electrode 22c Second electrode 23 Joining member 24 Wavelength conversion member 26 Lid Body 28 Reflective film 30 First external electrode 32 Second external electrode 34 Submount 36 Protective element 38 Spacer X Through hole

Claims (6)

基体と、
前記基体上に配置され、複数の貫通孔を備えた透光性部材と、
前記複数の貫通孔の一つに配置される半導体レーザ素子と、
前記複数の貫通孔のうち前記半導体レーザ素子が配置される貫通孔とは異なる貫通孔内に配置され、前記半導体レーザ素子からの光が照射されることにより蛍光を発する波長変換部材と、
前記透光性部材上に配置され、前記複数の貫通孔のうち少なくとも前記半導体レーザ素子が配置される貫通孔と前記波長変換部材が配置される貫通孔とを気密封止する蓋体と、を有する光源装置。 With the substrate
A translucent member arranged on the substrate and having a plurality of through holes,
A semiconductor laser device arranged in one of the plurality of through holes,
A wavelength conversion member that is arranged in a through hole different from the through hole in which the semiconductor laser element is arranged among the plurality of through holes and emits fluorescence by being irradiated with light from the semiconductor laser element.
A lid that is arranged on the translucent member and airtightly seals at least the through hole in which the semiconductor laser element is arranged and the through hole in which the wavelength conversion member is arranged among the plurality of through holes. Light source device to have. 前記基体と前記透光性部材との間に、前記基体と前記透光性部材とを接合し、前記半導体レーザ素子からの光及び前記蛍光の少なくとも一方を反射する反射膜を有する請求項１に記載の光源装置。 The first aspect of the present invention has a reflective film that joins the substrate and the translucent member between the substrate and the translucent member and reflects at least one of the light from the semiconductor laser element and the fluorescence. The light source device described. 前記透光性部材と前記蓋体との間に、前記透光性部材と前記蓋体とを接合し、前記半導体レーザ素子からの光及び前記蛍光の少なくとも一方を反射する反射膜を有する請求項１または２に記載の光源装置。 A claim that has a reflective film that joins the translucent member and the lid between the translucent member and the lid and reflects at least one of the light from the semiconductor laser element and the fluorescence. The light source device according to 1 or 2. 前記透光性部材はガラスである請求項１から３のいずれか１項に記載の光源装置。 The light source device according to any one of claims 1 to 3, wherein the translucent member is glass. 前記波長変換部材は潮解性の蛍光体を有する請求項１から４のいずれか１項に記載の光源装置。 The light source device according to any one of claims 1 to 4, wherein the wavelength conversion member has a deliquescent phosphor. 前記透光性部材は一つの部材で形成されていることを特徴とする請求項１から５のいずれか１項に記載の光源装置。The light source device according to any one of claims 1 to 5, wherein the translucent member is formed of one member.
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